Patent application number | Description | Published |
20090012626 | MINIMALLY INVASIVE LUNG VOLUME REDUCTION DEVICES, METHODS, AND SYSTEMS - A lung volume reduction system is disclosed comprising an implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to bend the lung airway. The invention also discloses a method of bending a lung airway of a patient comprising inserting a device into the airway in a delivery configuration and bending the device into a deployed configuration, thereby bending the airway. | 01-08-2009 |
20090076622 | Delivery of Minimally Invasive Lung Volume Reduction Devices - A lung volume reduction system is disclosed comprising an implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to bend the lung airway. The invention also discloses a method of bending a lung airway of a patient comprising inserting a device into the airway in a delivery configuration and bending the device into a deployed configuration, thereby bending the airway. | 03-19-2009 |
20090076623 | Lung Volume Reduction Devices, Methods, and Systems - The invention provides improved medical devices, therapeutic treatment systems, and treatment methods for treatment of the lung. A lung volume reduction system includes an implantable device having an elongate body that is sized and shaped for delivery via the airway system to a lung airway of a patient. The implant is inserted and positioned while the implant is in a delivery configuration, and is reconfigured to a deployed configuration so as to locally compress adjacent tissue of the lung, with portions of the elongate body generally moving laterally within the airway so as to laterally compress lung tissue. A plurality of such implants will often be used to treat a lung of a patient. | 03-19-2009 |
20100070050 | Enhanced Efficacy Lung Volume Reduction Devices, Methods, and Systems - A lung volume reduction system is disclosed comprising an implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to bend the lung airway. The invention also discloses a method of bending a lung airway of a patient comprising inserting a device into the airway in a delivery configuration and bending the device into a deployed configuration, thereby bending the airway. | 03-18-2010 |
20100100196 | Elongated Lung Volume Reduction Devices, Methods, and Systems - A lung volume reduction system is disclosed comprising an elongate implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to compress lung tissue. The implant may be longer in axial length than an axial length of the target axial region in which it is deployed. Deployment may involve allowing an end of the implant to move relative to surrounding tissue while the implant is progressively deployed. | 04-22-2010 |
20110251592 | DEVICES FOR MAINTAINING SURGICALLY CREATED OPENINGS - Devices and methods are directed to improving the gaseous exchange in a lung of an individual having, for instance, chronic obstructive pulmonary disease. More particularly, conduits may be deployed in the lung to maintain collateral openings (or channels) surgically created through airway walls. This tends to facilitate both the exchange of oxygen ultimately into the blood and decompress hyper-inflated lungs. The conduit includes a radially expandable center section having a first end, a second end, and a passageway extending from the first end to the second end. A control segment may be associated with the conduit to limit the degree of radial expansion. The conduit further includes a plurality of deflectable members extending from the ends of the center section. A tissue barrier may coaxially surround the conduit such that tissue ingrowth is prevented. The conduits may also include hold-down members and bioactive coatings that serve to prevent ejection of the conduit as well as prevent narrowing of the passageway due to tissue ingrowth. | 10-13-2011 |
20120107502 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
20120108062 | Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
20120172909 | Lung Volume Reduction Devices, Methods, and Systems - The invention provides improved medical devices, therapeutic treatment systems, and treatment methods for treatment of the lung. A lung volume reduction system includes an implantable device having an elongate body that is sized and shaped for delivery via the airway system to a lung airway of a patient. The implant is inserted and positioned while the implant is in a delivery configuration, and is reconfigured to a deployed configuration so as to locally compress adjacent tissue of the lung, with portions of the elongate body generally moving laterally within the airway so as to laterally compress lung tissue. A plurality of such implants will often be used to treat a lung of a patient. | 07-05-2012 |
20120177841 | Low Temperature Silicon Carbide Deposition Process - Methods for formation of silicon carbide on substrate are provided. Atomic layer deposition methods of forming silicon carbide are described in which a first reactant gas of the formula Si | 07-12-2012 |
20120202357 | In Situ Vapor Phase Surface Activation Of SiO2 - Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia. | 08-09-2012 |
20120225191 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120225192 | Apparatus And Process For Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120231164 | Precursors and Methods for the Atomic Layer Deposition of Manganese - Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl. | 09-13-2012 |
20120270409 | Methods For Manufacturing High Dielectric Constant Films - Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water. | 10-25-2012 |
20120309206 | Stoichiometry Control Of Transition Metal Oxides In Thin Films - One aspect of the invention relates to a method for deposition of a film having a predetermined film composition. The method comprises: in a deposition chamber: providing a substrate at a fixed temperature; depositing a film; flowing a mixture of two gases, wherein the ratio of the two gases is selected such that the mixture has a redox potential to provide a predetermined film composition. In some embodiments, depositing a film occurs via an atomic layer deposition process or chemical vapor deposition process. Methods for chemical vapor deposition of a metal or lanthanide oxide layer are provided featuring a mixture of oxidizing and reducing gases is flowed over the transition metal oxide or lanthanide oxide layer. The mixture of gases has an oxidation potential selected to produce a layer having a desired stoichiometry of a deposited film. | 12-06-2012 |
20130059077 | Method of Atomic Layer Deposition Using Metal Precursors - Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups. | 03-07-2013 |
20130071580 | Activated Silicon Precursors For Low Temperature Deposition - Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films. | 03-21-2013 |
20130078454 | Metal-Aluminum Alloy Films From Metal Amidinate Precursors And Aluminum Precursors - Described are methods for deposition of metal-aluminum films using metal amidinate precursors and aluminum precursors. Such metal-aluminum films can include metal aluminum carbide, metal aluminum nitride and metal aluminum carbonitride films. The aluminum precursors may be alkyl aluminum precursors or amine alanes. | 03-28-2013 |
20130078455 | Metal-Aluminum Alloy Films From Metal PCAI Precursors And Aluminum Precursors - Described are methods for deposition of metal-aluminum films using metal PCAI precursors and aluminum precursors. Such metal-aluminum films can include metal aluminum carbide, metal aluminum nitride and metal aluminum carbonitride films. The aluminum precursors may be alkyl aluminum precursors or amine alanes. | 03-28-2013 |
20130096603 | Lung Volume Reduction Devices, Methods, and Systems - The invention provides improved medical devices, therapeutic treatment systems, and treatment methods for treatment of the lung. A lung volume reduction system includes an implantable device having an elongate body that is sized and shaped for delivery via the airway system to a lung airway of a patient. The implant is inserted and positioned while the implant is in a delivery configuration, and is reconfigured to a deployed configuration so as to locally compress adjacent tissue of the lung, with portions of the elongate body generally moving laterally within the airway so as to laterally compress lung tissue. A plurality of such implants will often be used to treat a lung of a patient. | 04-18-2013 |
20130102887 | Minimally Invasive Lung Volume Reduction Devices, Methods, and Systems - A lung volume reduction system is disclosed comprising an implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to bend the lung airway. The invention also discloses a method of bending a lung airway of a patient comprising inserting a device into the airway in a delivery configuration and bending the device into a deployed configuration, thereby bending the airway. | 04-25-2013 |
20130103059 | Enhanced Efficacy Lung Volume Reduction Devices, Methods, and Systems - A lung volume reduction system is disclosed comprising an implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to bend the lung airway. The invention also discloses a method of bending a lung airway of a patient comprising inserting a device into the airway in a delivery configuration and bending the device into a deployed configuration, thereby bending the airway. | 04-25-2013 |
20130115383 | DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS - Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: | 05-09-2013 |
20130157475 | Film Deposition Using Tantalum Precursors - Provided are methods of depositing tantalum-containing films via atomic layer deposition and/or chemical vapor deposition. The method comprises exposing a substrate surface to flows of a first precursor comprising TaCl | 06-20-2013 |
20130217956 | Minimally Invasive Lung Volume Reduction Devices, Methods, and Systems - A lung volume reduction system is disclosed comprising an implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to bend the lung airway. The invention also discloses a method of bending a lung airway of a patient comprising inserting a device into the airway in a delivery configuration and bending the device into a deployed configuration, thereby bending the airway. | 08-22-2013 |
20130243971 | Apparatus and Process for Atomic Layer Deposition with Horizontal Laser - Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors. | 09-19-2013 |
20130267709 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 10-10-2013 |
20130273733 | Methods for Depositing Manganese and Manganese Nitrides - Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film. | 10-17-2013 |
20130288427 | Methods Of Fabricating Dielectric Films From Metal Amidinate Precursors - Described are methods for atomic layer deposition of films comprising mixed metal oxides using metal amidinate precursors. The mixed metal oxide films may comprise a lanthanide and a transition metal such as hafnium, zirconium or titanium. Such mixed metal oxide films may be used as dielectric layers in capacitors, transistors, dynamic random access memory cells, resistive random access memory cells, flash memory cells and display panels. | 10-31-2013 |
20140004274 | Deposition Of Films Containing Alkaline Earth Metals | 01-02-2014 |
20140017408 | Deposition Of N-Metal Films Comprising Aluminum Alloys - Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl | 01-16-2014 |
20140023785 | Method For Producing Nickel-Containing Films - Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by formula (I): | 01-23-2014 |
20140050849 | Method of Catalytic Film Deposition - Provided are methods of catalytic atomic layer deposition using pyridine-based catalysts. Certain methods comprising activating a reaction between at least two film precursors and certain other methods of catalytic deposition of SiO | 02-20-2014 |
20140102365 | Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 04-17-2014 |
20140112824 | Deposition Of Films Comprising Aluminum Alloys With High Aluminum Content - Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same. | 04-24-2014 |
20140120723 | METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN - Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl | 05-01-2014 |
20140242806 | Metal Amide Deposition Precursors And Their Stabilization With An Inert Ampoule Liner - Described are methods and apparatuses for the stabilization of precursors, which can be used for the deposition of manganese-containing films. Certain methods and apparatus relate to lined ampoules and/or 2-electron donor ligands. | 08-28-2014 |
20140255606 | Methods For Depositing Films Comprising Cobalt And Cobalt Nitrides - Described are cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: | 09-11-2014 |
20140273492 | Methods Of Etching Films Comprising Transition Metals - Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni. | 09-18-2014 |
20140273526 | Atomic Layer Deposition Of Films Comprising Si(C)N Using Hydrazine, Azide And/Or Silyl Amine Derivatives - Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R | 09-18-2014 |
20140363575 | Methods for the Deposition Of Manganese-Containing Films Using Diazabutadiene-Based Precursors - Methods and precursors are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising a diazabutadiene-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a tertiary amine. | 12-11-2014 |
20140371705 | Minimally Invasive Lung Volume Reduction Devices, Methods, and Systems - A lung volume reduction system is disclosed comprising an implantable device adapted to be delivered to a lung airway of a patient in a delivery configuration and to change to a deployed configuration to bend the lung airway. The invention also discloses a method of bending a lung airway of a patient comprising inserting a device into the airway in a delivery configuration and bending the device into a deployed configuration, thereby bending the airway. | 12-18-2014 |
20150057695 | Lung Volume Reduction Devices, Methods, and Systems - The invention provides improved medical devices, therapeutic treatment systems, and treatment methods for treatment of the lung. A lung volume reduction system includes an implantable device having an elongate body that is sized and shaped for delivery via the airway system to a lung airway of a patient. The implant is inserted and positioned while the implant is in a delivery configuration, and is reconfigured to a deployed configuration so as to locally compress adjacent tissue of the lung, with portions of the elongate body generally moving laterally within the airway so as to laterally compress lung tissue. A plurality of such implants will often be used to treat a lung of a patient. | 02-26-2015 |
20150086722 | METHOD FOR CLEANING TITANIUM ALLOY DEPOSITION - Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support. | 03-26-2015 |
20150118100 | Film Deposition Using Precursors Containing Amidoimine Ligands - Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent. | 04-30-2015 |
20150147484 | Atomic Layer Deposition Of Films Comprising Silicon, Carbon And Nitrogen Using Halogenated Silicon Precursors - Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma. | 05-28-2015 |
20150162191 | Substituted Silacyclopropane Precursors And Their Use For The Deposition Of Silicon-Containing Films - Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations. | 06-11-2015 |
20150162214 | Methods Of Selective Layer Deposition - Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed. | 06-11-2015 |
20150252477 | IN-SITU CARBON AND OXIDE DOPING OF ATOMIC LAYER DEPOSITION SILICON NITRIDE FILMS - Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates. | 09-10-2015 |
20150262828 | MULTI-THRESHOLD VOLTAGE (Vt) WORKFUNCTION METAL BY SELECTIVE ATOMIC LAYER DEPOSITION (ALD) - Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the atop the first work function layer and the second feature. | 09-17-2015 |
20150275364 | Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing - Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed. | 10-01-2015 |
20150294906 | METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS - Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface. | 10-15-2015 |
20150328435 | STEERABLE DEVICE FOR ACCESSING A TARGET SITE AND METHODS - A variety of steerable needles, lancets, trocars, stylets, cannulas and systems are provided for examining, diagnosing, treating, or removing tissue from a patient. The steerable needles, trocars, stylets, cannulas and systems also provide a platform for delivery of target materials, such as therapeutics, biologics, polymes, glues, etc., to a target site. An embodiment of the invention includes a steerable device for use in accessing target site in a patient comprising: a steerable member adapted to penetrate tissue; and a steering mechanism adapted to be operated by a user to apply a bending force to bend the steerable member to access the target site. | 11-19-2015 |
20160002039 | Low Temperature Atomic Layer Deposition Of Films Comprising SiCN OR SiCON - Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (X | 01-07-2016 |
20160002782 | Catalytic Atomic Layer Deposition Of Films Comprising SiOC - Provided are methods of for deposition of SiOC. Certain methods involve exposing a substrate surface to a first and second precursor in the presence of a catalyst comprising a neutral two electron donor base. The first precursor has formula (X | 01-07-2016 |
20160004259 | APPARATUS AND METHOD FOR SELF-REGULATING FLUID CHEMICAL DELIVERY - Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir. | 01-07-2016 |
20160024647 | Low Temperature Molecular Layer Deposition Of SiCON - Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety. | 01-28-2016 |
20160031916 | Substituted Silacyclopropane Precursors And Their Use For The Deposition Of Silicon-Containing Films - Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations. | 02-04-2016 |
20160032455 | HIGH THROUGH-PUT AND LOW TEMPERATURE ALD COPPER DEPOSITION AND INTEGRATION - Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate. | 02-04-2016 |
20160064275 | Selective Deposition With Alcohol Selective Reduction And Protection - Methods of selectively depositing a metal selectively onto a metal surface relative to a dielectric surface. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon. | 03-03-2016 |
20160104624 | Methods For Depositing Fluorine/Carbon-Free Conformal Tungsten - Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl | 04-14-2016 |