Patent application number | Description | Published |
20090130338 | Group 2 Metal Precursors for Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 05-21-2009 |
20090136685 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
20100119726 | Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films - This invention is related to Group 2 metal-containing polydentate β-ketoiminate precursors and compositions comprising Group 2 metal-containing polydentate β-ketoiminate precursors, wherein the polydentate β-ketoiminate precursors incorporate an alkoxy group in the imino portion of the molecule. The compounds and compositions are useful for fabricating metal containing films on substrates such as silicon, metal nitride, metal oxide and other metal layers via chemical vapor deposition (CVD) processes. | 05-13-2010 |
20100143607 | Precursors for Depositing Group 4 Metal-Containing Films - Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: | 06-10-2010 |
20110040124 | Method for Preparing Metal Complexes of Polydentate Beta-Ketoiminates - A method for making a group 2 metal-containing polydentate β-ketoiminate represented by the following structure A: | 02-17-2011 |
20110135838 | Liquid Precursor for Depositing Group 4 Metal Containing Films - The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR | 06-09-2011 |
20110212629 | LIQUID COMPOSITION CONTAINING AMINOETHER FOR DEPOSITION OF METAL-CONTAINING FILMS - A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R | 09-01-2011 |
20110250126 | GROUP 4 METAL PRECURSORS FOR METAL-CONTAINING FILMS - The present invention is related to a family of Group 4 metal precursors represented by the formula: | 10-13-2011 |
20110256314 | METHODS FOR DEPOSITION OF GROUP 4 METAL CONTAINING FILMS - A method for forming metal-containing films by atomic layer deposition using precursors of the formula: | 10-20-2011 |
20120045589 | Amidate Precursors For Depositing Metal Containing Films - Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described. | 02-23-2012 |
20120121806 | Complexes Of Imidazole Ligands - Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated. | 05-17-2012 |
20120201958 | Multidentate Ketoimine Ligands For Metal Complexes - The present invention is a plurality of metal-containing complexes of a multidentate ketoiminate. | 08-09-2012 |
20130008345 | Novel Metal Complexes for Metal-Containing Film Deposition - Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries. | 01-10-2013 |
20130078391 | Complexes Of Imidazole Ligands - Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated. | 03-28-2013 |
20130180215 | CATALYST AND FORMULATIONS COMPRISING SAME FOR ALKOXYSILANES HYDROLYSIS REACTION IN SEMICONDUCTOR PROCESS - A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR | 07-18-2013 |
20130196082 | ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF - Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: | 08-01-2013 |
20130243968 | CATALYST SYNTHESIS FOR ORGANOSILANE SOL-GEL REACTIONS - A formulation comprising a first organosilane precursor and a halogenation reagent wherein at least a portion or all of the halogenation reagent reacts to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process. | 09-19-2013 |
20130319290 | ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: | 12-05-2013 |
20130323435 | ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: | 12-05-2013 |
20140158580 | ALKOXYSILYLAMINE COMPOUNDS AND APPLICATIONS THEREOF - Described herein are alkoxysilylamine precursors having the following Formulae A and B: | 06-12-2014 |
20150056822 | COMPOSITIONS AND METHODS USING SAME FOR FLOWABLE OXIDE DEPOSITION - Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds. | 02-26-2015 |
Patent application number | Description | Published |
20080254218 | Metal Precursor Solutions For Chemical Vapor Deposition - Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors. | 10-16-2008 |
20080286464 | Group 2 Metal Precursors For Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as potential precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 11-20-2008 |
20090136677 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
20100038785 | Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers - We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium. | 02-18-2010 |
20100075067 | Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD - A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established. | 03-25-2010 |