Patent application number | Description | Published |
20100032766 | Bipolar Junction Transistor with a Reduced Collector-Substrate Capacitance - A process for forming a bipolar junction transistor (BJT) in a semiconductor substrate and a BJT formed according to the process. A buried isolation region is formed underlying BJT structures to isolate the BJT structures from the p-type semi-conductor substrate. To reduce capacitance between a BJT subcollector and the buried isolation region, prior to implanting the subcollector spaced-apart structures are formed on a surface of the substrate. The subcollector is formed by implanting ions through the spaced-apart structures and through a region intermediate the spaced-apart structures. The formed BJT subcollector therefore comprises a body portion and end portions extending therefrom, with the end portions disposed at a shallower depth than the body portion, since the ions implanting the end portions must pass through the spaced-apart structures. The shallower depth of the end portions reduces the capacitance. | 02-11-2010 |
20120139363 | RECONFIGURABLE RF SWITCH DIE - A radio frequency (RF) switch die which includes an antenna port, a plurality of RF ports, a switch fabric for selectively coupling one or more of the RF ports to the antenna port, and control circuitry that is adapted to, in a first mode, direct the switch fabric to couple any one of the plurality of RF ports individually to the antenna port, and in a second mode, couple a selected group of the RF ports to the antenna port. The RF switch die may include M number of RF ports, and be relatively easily reconfigured to provide N number of RF ports, wherein N is less than M. Groups of RF ports may be coupled together to form coupled RF ports that offer different electrical characteristics than non-coupled RF ports. | 06-07-2012 |
20120238230 | RF SYSTEM FOR REDUCING INTERMODULATION (IM) PRODUCTS - An RF system for reducing intermodulation (IM) products is disclosed. The RF system includes a first nonlinear element and a second nonlinear element, wherein the second nonlinear element generates inherent IM products and the first nonlinear element is adapted to generate compensating IM products. Alternatively, the first nonlinear element generates inherent IM products and the second nonlinear element is adapted to generate compensating IM products. The amplitudes of the compensating IM products are substantially equal to amplitudes of the inherent IM products. The RF system further includes a phase shifter that is adapted to provide a phase shift that results in around 180° of phase shift between the inherent IM products and the compensating IM products. The phase shifter is coupled between the first nonlinear element and the second nonlinear element. | 09-20-2012 |
20140210436 | LOW NOISE RADIO FREQUENCY SWITCHING CIRCUITRY - Radio frequency (RF) switching circuitry includes support circuitry for maintaining one or more RF switching elements in either an ON or OFF state. The support circuitry includes a negative charge pump adapted to quickly generate a negative voltage during a “boost” mode of operation, and maintain the negative voltage during a normal mode of operation. The negative charge pump includes an oscillator adapted to generate a high frequency oscillating signal for driving the charge pump during the boost mode of operation and a low frequency oscillating signal for driving the charge pump during the normal mode of operation. By generating the high frequency oscillating signal only during a boost mode of operation, spurious noise coupled to the RF switch circuitry is minimized during a normal mode of operation. | 07-31-2014 |
20140220911 | DEDICATED SHUNT SWITCH WITH IMPROVED GROUND - Antenna tuning switch circuitry includes an input port, a shunt switch, control circuitry, and an integrated ground. The shunt switch is coupled between the input port and the integrated ground. The control circuitry includes a control signal input port, a switch driver output port coupled to the shunt switch, and a ground connection port coupled to the integrated ground. The shunt switches, the RF input ports, the control circuitry, and the integrated ground are monolithically integrated on a single semiconductor die. The antenna tuning switch circuitry is adapted to selectively couple the input port to the integrated ground in order to alter one or more operating parameters of an attached antenna. By monolithically integrating the shunt switch together with the control circuitry and the integrated ground, the ON state impedance and the parasitic OFF state impedance of the antenna tuning switch circuitry can be significantly improved. | 08-07-2014 |
20140242760 | SEMICONDUCTOR RADIO FREQUENCY SWITCH WITH BODY CONTACT - The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element. | 08-28-2014 |
20140252566 | SILICON-ON-DUAL PLASTIC (SODP) TECHNOLOGY AND METHODS OF MANUFACTURING THE SAME - A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A first polymer having a high thermal conductivity and a high electrical resistivity is disposed on the first surface of the semiconductor stack structure. An exemplary method includes providing the semiconductor stack structure with the second surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the second surface of the semiconductor stack structure. A following step includes disposing a second polymer having high thermal conductivity and high electrical resistivity directly onto the second surface of the semiconductor stack structure. Additional methods apply silicon nitride layers on the first surface and second surface of the semiconductor stack structure before disposing the first polymer and second polymer to realize the semiconductor device. | 09-11-2014 |
20140252567 | PATTERNED SILICON-ON-PLASTIC (SOP) TECHNOLOGY AND METHODS OF MANUFACTURING THE SAME - A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive. | 09-11-2014 |
20140266415 | HARMONIC CANCELLATION CIRCUIT FOR AN RF SWITCH BRANCH - Disclosed is a harmonic cancellation circuit for an RF switch branch having a first transistor with a first gate terminal and a first body terminal, a second transistor having a second gate terminal coupled to the first body terminal, and having a second body terminal coupled to the first gate terminal. Also included is a first resistor coupled between a first coupling node and the second body terminal, and a second resistor coupled between a second coupling node and the first body terminal, wherein the first transistor and second transistor are adapted to generate an inverse phase third harmonic signal relative to a third harmonic signal generated by the RF switch branch, such that the inverse phase third harmonic signal is output through the first resistor and the second resistor to the RF switch branch to reduce the third harmonic signal. | 09-18-2014 |
20140306324 | SEMICONDUCTOR DEVICE WITH A POLYMER SUBSTRATE AND METHODS OF MANUFACTURING THE SAME - A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A polymer substrate having a high thermal conductivity and a high electrical resistivity is disposed onto the first surface of the semiconductor stack structure. One method includes providing the semiconductor stack structure with the first surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the first surface of the semiconductor stack structure. A following step includes disposing a polymer substrate having high thermal conductivity and high electrical resistivity directly onto the first surface of the semiconductor stack structure. | 10-16-2014 |
20140335801 | TECHNIQUE TO REDUCE THE THIRD HARMONIC OF AN ON-STATE RF SWITCH - RF switching circuitry includes an RF switch coupled between an input node and an output node. Distortion compensation circuitry is coupled in parallel with the RF switch between the input node and the output node. The RF switch is configured to selectively pass an RF signal from the input node to the output node based on a first switching control signal. The distortion compensation circuitry is configured to boost a portion of the RF signal that is being compressed by the RF switch when the amplitude of the RF signal is above a predetermined threshold by selectively injecting current into one of the input node or the output node. Boosting a portion of the RF signal that is being compressed by the RF switch allows a signal passing through the RF switch to remain substantially linear, thereby improving the performance of the RF switching circuitry. | 11-13-2014 |
20140361839 | NONLINEAR CAPACITANCE LINEARIZATION - An apparatus, which includes a first electronic device, a first nonlinear capacitance compensation circuit, and a capacitance compensation control circuit, is disclosed. The first electronic device has a first nonlinear capacitance and is coupled to the first nonlinear capacitance compensation circuit, which has a first compensation capacitance and receives a first compensation control signal. The capacitance compensation control circuit adjusts the first compensation capacitance using the first compensation control signal to at least partially linearize the first nonlinear capacitance. | 12-11-2014 |
20150054698 | ANTENNA TUNING CIRCUITRY WITH REDUCED INTERFERENCE - Antenna tuning circuitry includes an antenna tuning node, an antenna tuning switch, and a resonant tuning circuit. The antenna tuning node is coupled to a resonant conduction element of an antenna. The antenna tuning switch and the resonant tuning circuit are coupled in series between the antenna tuning switch and the antenna tuning node, such that the resonant tuning circuit is between the antenna tuning node and the antenna tuning switch. The resonant tuning circuit is configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at harmonic frequencies generated by the antenna tuning switch. Accordingly, harmonic interference generated by the antenna tuning switch is prevented from reaching the antenna, while simultaneously allowing for tuning of the antenna. | 02-26-2015 |