Patent application number | Description | Published |
20090112203 | MODIFICATION OF AIRWAYS BY APPLICATION OF MICROWAVE ENERGY - Methods of increasing gas exchange performed by the lung by damaging lung cells, damaging tissue, causing trauma, and/or destroying airway smooth muscle tone with an apparatus inserted into an airway of the lung. The damaging of lung cells, damaging tissue, causing trauma, and destroying airway smooth muscle tone with the apparatus may be any one of or combinations of the following: heating the airway; cooling the airway; delivering a liquid to the airway; delivering a gas to the airway; puncturing the airway; tearing the airway; cutting the airway; applying ultrasound to the airway; and applying ionizing radiation to the airway. | 04-30-2009 |
20090143705 | MODIFICATION OF AIRWAYS BY APPLICATION OF ULTRASOUND ENERGY - Methods of increasing gas exchange performed by the lung by damaging lung cells, damaging tissue, causing trauma, and/or destroying airway smooth muscle tone with an apparatus inserted into an airway of the lung. The damaging of lung cells, damaging tissue, causing trauma, and destroying airway smooth muscle tone with the apparatus may be any one of or combinations of the following: heating the airway; cooling the airway; delivering a liquid to the airway; delivering a gas to the airway; puncturing the airway; tearing the airway; cutting the airway; applying ultrasound to the airway; and applying ionizing radiation to the airway. | 06-04-2009 |
20100185190 | METHODS FOR TREATING ASTHMA DAMAGING NERVE TISSUE - A method for treating the lung during an acute episode of reversible chronic obstructive pulmonary disease such as an asthma attack. The method comprises transferring energy to an airway wall of an airway such that a diameter of the airway is increased. The energy may be transferred to the airway wall prior to, during or after an asthma attack. The energy may be transferred in an amount sufficient to temporarily or permanently increase the diameter of the airway. The method may be performed while the airway is open, closed or partially closed. | 07-22-2010 |
20100204689 | METHOD FOR TREATING AN ASTHMA ATTACK - A method for treating the lung during an acute episode of reversible chronic obstructive pulmonary disease such as an asthma attack. The method comprises transferring energy to an airway wall of an airway such that a diameter of the airway is increased. The energy may be transferred to the airway wall prior to, during or after an asthma attack. The energy may be transferred in an amount sufficient to temporarily or permanently increase the diameter of the airway. The method may be performed while the airway is open, closed or partially closed. | 08-12-2010 |
20100268222 | DEVICES AND METHODS FOR TRACKING AN ENERGY DEVICE WHICH TREATS ASTHMA - Methods for treating a network of organs including generating a map of at least a portion of the network of organs using a rendering system; selecting at least one treatment location within the luminal passageway of the network of organs; and applying an energy therapy to the treatment location to treat the smooth muscle tissue, where the energy therapy applied to the respective treatment location is defined by a plurality of parameters that are associated with a map. Such a system allows for historical or ideal treatment parameters to be identified, visually or otherwise to actual treatment locations. Also, control systems and methods for delivery of energy that may include control algorithms that prevent energy delivery if a fault is detected and may provide energy delivery to produce a substantially constant temperature at a delivery site. In some embodiments, the control systems and methods may be used to control the delivery of energy, such as radiofrequency energy, to body tissue, such as lung tissue. | 10-21-2010 |
20110079230 | METHOD FOR TREATING AN ASTHMA ATTACK - A method for treating the lung during an acute episode of reversible chronic obstructive pulmonary disease such as an asthma attack. The method comprises transferring energy to an airway wall of an airway such that a diameter of the airway is increased. The energy may be transferred to the airway wall prior to, during or after an asthma attack. The energy may be transferred in an amount sufficient to temporarily or permanently increase the diameter of the airway. The method may be performed while the airway is open, closed or partially closed. | 04-07-2011 |
20110172655 | CONTROL SYSTEM AND PROCESS FOR APPLICATION OF ENERGY TO AIRWAY WALLS AND OTHER MEDIUMS - The present invention includes a system for delivering energy to an airway wall of a lung comprising an energy delivering apparatus and a PID controller having one or more variable gain factors which are rest after energy deliver has begun. The energy delivering apparatus may include a flexible elongated member and a distal expandable basket having at least one electrode for transferring energy to the airway wall and at least one temperature sensor for measuring temperature. The PID controller determines a new power set point base on an error between a preset temperature and the measured temperature. The algorithm can be P | 07-14-2011 |
20110184330 | INACTIVATION OF SMOOTH MUSCLE TISSUE - Treatment and procedures for treating bodily conduits involves deactivating, killing, or otherwise treating smooth muscle tissue of the conduit. | 07-28-2011 |
20110196288 | ENERGY DELIVERY DEVICES AND METHODS - This relates to methods and devices for achieving contact between the wall of a cavity or passageway and a medical device when used in tortuous anatomy. | 08-11-2011 |
20120323235 | METHOD FOR TREATING AN ASTHMA ATTACK - Methods of increasing gas exchange performed by the lung by damaging lung cells, damaging tissue, causing trauma, and/or destroying airway smooth muscle tone with an apparatus inserted into an airway of the lung are disclosed. The damaging of lung cells, damaging tissue, causing trauma, and/or destroying smooth muscle tone with the apparatus may be accomplished via any one of or combinations of the following: heating the airway; cooling the airway; delivering a liquid to the airway; delivering a gas to the airway; puncturing the airway; tearing the airway; cutting the airway; applying ultrasound to the airway; and applying ionizing radiation to the airway. | 12-20-2012 |
20130253492 | METHOD FOR TREATING AN ASTHMA ATTACK - An embodiment of the invention includes a method for decreasing resistance to airflow within a bronchial tree of a subject. The method may include the step of moving an intraluminal device along a lumen of an airway of a bronchial tree, where the intraluminal device includes an expandable member and an energy emitter. The method also may include damaging nerves along the airway using the intraluminal device without destroying an inner surface of an airway wall disposed radially between the intraluminal device and the nerves. | 09-26-2013 |
Patent application number | Description | Published |
20130023873 | CONTROL METHODS AND DEVICES FOR ENERGY DELIVERY - Control systems and methods for delivery of energy that may include control algorithms that prevent energy delivery if a fault is detected and may provide energy delivery to produce a substantially constant temperature at a delivery site. In some embodiments, the control systems and methods may be used to control the delivery of energy, such as radiofrequency energy, to body tissue, such as lung tissue. | 01-24-2013 |
20130035747 | METHODS FOR TREATING AIRWAYS - This relates to treating airways in a lung to decrease asthmatic symptoms. The also includes steps of measuring a parameter of an airway at a plurality of locations in a lung, identifying at least one treatment site from at least one of the plurality of locations based on the parameter, and applying energy to the treatment site to reduce the ability of the site to narrow. | 02-07-2013 |
20130090674 | ATHERECTOMY DEVICES AND METHODS - The devices and methods generally relate to treatment of occluded body lumens. In particular, the present devices and method relate to removal of the occluding material from the blood vessels as well as other body lumens. | 04-11-2013 |
20130096587 | ATHERECTOMY APPARATUS, SYSTEMS AND METHODS - Described here are devices and methods for performing atherectomies. Generally, the atherectomy devices may comprise a handle, a cutter assembly, and a catheter or catheter assembly therebetween. The cutter assembly may include a cutter housing and a cutter comprising a first cutting element and a second cutting element, each of which may be rotated relative to the atherectomy device to cut occlusive material. | 04-18-2013 |
20130211402 | METHODS OF TREATING INFLAMMATION IN AIRWAYS - This relates to treating an asthmatic lung and more particularly, relates to advancing a treatment device into the lung and treating the lung with the device. This also includes additional steps of treating the airway wall, applying energy or heat to the airway wall in an asthmatic lung. | 08-15-2013 |
20130226167 | ENERGY DELIVERY DEVICES AND METHODS - This relates to methods and devices for achieving contact between the wall of a cavity or passageway and a medical device when used in tortuous anatomy. | 08-29-2013 |
20130253623 | MODIFICATION OF AIRWAYS BY APPLICATION OF ENERGY - This relates to treating reversible chronic obstructive pulmonary disease, and more particularly, to exchanging energy with airway tissue such as that found in human lungs. This exchange of energy reduces the ability of the airways to constrict, reduces the resistance within the airway to the flow of air through the airway, reduces mucus plugging of the airways, and/or increases the airway diameter. This energy exchange also may reduce the ability of the lung to produce at least one of the symptoms of reversible obstructive pulmonary disease. | 09-26-2013 |
20140018789 | ENERGY DELIVERY DEVICES AND METHODS - A method for treating a subject includes positioning an intraluminal device at a treatment location in an airway of the subject, and delivering energy from an electrode of the intraluminal device to nerve tissue extending along the airway so as to permanently damage the nerve tissue while cooling airway tissue disposed radially between the electrode and the nerve tissue. | 01-16-2014 |
20140018790 | ENERGY DELIVERY DEVICES AND METHODS - A method of treating an airway includes inserting a treatment device into the airway, wherein the treatment device includes an energy delivery element configured to deliver energy to tissue of the airway, advancing the treatment device to a treatment location in the airway, activating the energy delivery element to deliver energy to tissue at the treatment location, and cooling tissue near the treatment location simultaneously with the activating step. | 01-16-2014 |
20140025063 | ENERGY DELIVERY DEVICES AND METHODS - This relates to methods and devices for achieving contact between the wall of a cavity or passageway and a medical device when used in tortuous anatomy. | 01-23-2014 |
20140046319 | METHODS OF TREATING A LUNG - A method for treating the lung during an acute episode of reversible chronic obstructive pulmonary disease such as an asthma attack. The method comprises transferring energy to an airway wall of an airway such that a diameter of the airway is increased. The energy may be transferred to the airway wall prior to, during or after an asthma attack. The energy may be transferred in an amount sufficient to temporarily or permanently increase the diameter of the airway. The method may be performed while the airway is open, closed or partially closed. | 02-13-2014 |
20140058423 | ATHERECTOMY APPARATUS, SYSTEMS AND METHODS - Described here are devices and methods for performing atherectomies. Generally, the atherectomy devices may comprise a handle, a cutter assembly, and a catheter or catheter assembly therebetween. The cutter assembly may include a cutter housing and a cutter comprising a first cutting element and a second cutting element, each of which may be rotated relative to the atherectomy device to cut occlusive material. | 02-27-2014 |
20140107680 | ATHERECTOMY DEVICES AND METHODS - The devices and methods generally relate to treatment of occluded body lumens. In particular, the present devices and method relate to removal of the occluding material from the blood vessels as well as other body lumens. | 04-17-2014 |
20140114378 | SYSTEM FOR TREATING A LUNG - A method for treating the lung during an acute episode of reversible chronic obstructive pulmonary disease such as an asthma attack. The method comprises transferring energy to an airway wall of an airway such that a diameter of the airway is increased. The energy may be transferred to the airway wall prior to, during or after an asthma attack. The energy may be transferred in an amount sufficient to temporarily or permanently increase the diameter of the airway. The method may be performed while the airway is open, closed or partially closed. | 04-24-2014 |
20140148635 | METHODS FOR TREATING AIRWAYS - This relates to treating airways in a lung to decrease asthmatic symptoms. The also includes steps of measuring a parameter of an airway at a plurality of locations in a lung, identifying at least one treatment site from at least one of the plurality of locations based on the parameter, and applying energy to the treatment site to reduce the ability of the site to narrow. | 05-29-2014 |
20140330332 | CONTROL METHODS AND DEVICES FOR ENERGY DELIVERY - Control systems and methods for delivery of energy that may include control algorithms that prevent energy delivery if a fault is detected and may provide energy delivery to produce a substantially constant temperature at a delivery site. In some embodiments, the control systems and methods may be used to control the delivery of energy, such as radiofrequency energy, to body tissue, such as lung tissue. | 11-06-2014 |
20140341801 | INACTIVATION OF SMOOTH MUSCLE TISSUE - Treatment and procedures for treating bodily conduits involves deactivating, killing, or otherwise treating smooth muscle tissue of the conduit. | 11-20-2014 |
20150025605 | ENERGY DELIVERY DEVICES AND METHODS - This relates to methods and devices for achieving contact between the wall of a cavity or passageway and a medical device when used in tortuous anatomy. | 01-22-2015 |
20150038959 | CONTROL SYSTEM AND PROCESS FOR APPLICATION OF ENERGY TO AIRWAY WALLS AND OTHER MEDIUMS - The present disclosure may include a system for delivering energy to an airway wall of a lung comprising an energy delivering apparatus and a PID controller having one or more variable gain factors. The energy delivering apparatus may include a flexible elongated member and a distal expandable basket having at least one electrode for transferring energy to the airway wall and at least one temperature sensor for measuring temperature. | 02-05-2015 |
Patent application number | Description | Published |
20100144140 | METHODS FOR DEPOSITING TUNGSTEN FILMS HAVING LOW RESISTIVITY FOR GAPFILL APPLICATIONS - Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten along the feature sidewall. Multiple deposition-removal cycles can be used to close the feature. The filled feature is less prone to coring during CMP. | 06-10-2010 |
20100267230 | METHOD FOR FORMING TUNGSTEN CONTACTS AND INTERCONNECTS WITH SMALL CRITICAL DIMENSIONS - Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process. | 10-21-2010 |
20100267235 | METHODS FOR DEPOSITING ULTRA THIN LOW RESISTIVITY TUNGSTEN FILM FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS - Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process. | 10-21-2010 |
20110059608 | METHOD FOR IMPROVING ADHESION OF LOW RESISTIVITY TUNGSTEN/TUNGSTEN NITRIDE LAYERS - Methods of improving the adhesion of low resistivity tungsten/tungsten nitride layers are provided. Low resistivity tungsten/tungsten nitride layers with good adhesion are formed by treating a tungsten or tungsten nitride layer before depositing low resistivity tungsten. Treatments include a plasma treatment and a temperature treatment. According to various embodiments, the treatment methods involve different gaseous atmospheres and plasma conditions. | 03-10-2011 |
20110159690 | DEPOSITING TUNGSTEN INTO HIGH ASPECT RATIO FEATURES - Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner. | 06-30-2011 |
20110221044 | TUNGSTEN BARRIER AND SEED FOR COPPER FILLED TSV - Apparatus and methods for filling through silicon vias (TSV's) with copper having an intervening tungsten layer between the copper plug and the silicon are disclosed. Methods are useful for Damascene processing, with or without a TSV feature. The tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon. Adhesion of the tungsten layer to the silicon and of the copper layer to the tungsten is described. | 09-15-2011 |
20120009785 | Depositing Tungsten Into High Aspect Ratio Features - Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr. | 01-12-2012 |
20120077342 | SYSTEMS AND METHODS FOR SELECTIVE TUNGSTEN DEPOSITION IN VIAS - A method for processing a substrate includes providing a substrate including a metal layer, a dielectric layer arranged on the metal layer, and at least one of a via and a trench formed in the dielectric layer; depositing a metal using chemical vapor deposition (CVD) during a first deposition period, wherein the first deposition period is longer than a first nucleation period that is required to deposit the metal on the metal layer; stopping the first deposition period prior to a second nucleation delay period, wherein the second nucleation period is required to deposit the metal on the dielectric layer; performing the depositing and the stopping N times, where N is an integer greater than or equal to one; and after the performing, depositing the metal using CVD during a second deposition period that is longer than the second nucleation delay period. | 03-29-2012 |
20120080793 | SUBTRACTIVE PATTERNING TO DEFINE CIRCUIT COMPONENTS - Certain embodiments pertain to local interconnects formed by subtractive patterning of blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other deposited metal can be grown to relatively large dimensions, which results in increased electrical conductivity due to, e.g., reduced electron scattering at grain boundaries as electrons travel from one grain to the next during conduction. | 04-05-2012 |
20120115329 | DEPOSITING TUNGSTEN INTO HIGH ASPECT RATIO FEATURES - Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner. | 05-10-2012 |
20130005140 | SYSTEMS AND METHODS FOR CONTROLLING ETCH SELECTIVITY OF VARIOUS MATERIALS - A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD. | 01-03-2013 |
20130171822 | TUNGSTEN FEATURE FILL WITH NUCLEATION INHIBITION - Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. In certain embodiments, the substrate can be biased during selective inhibition. Process parameters including bias power, exposure time, plasma power, process pressure and plasma chemistry can be used to tune the inhibition profile. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate/wordline fill, and 3-D integration using through-silicon vias. | 07-04-2013 |
20130302980 | TUNGSTEN FEATURE FILL - Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs). | 11-14-2013 |
20130330926 | DEPOSITING TUNGSTEN INTO HIGH ASPECT RATIO FEATURES - Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner. | 12-12-2013 |
20140030889 | METHODS OF IMPROVING TUNGSTEN CONTACT RESISTANCE IN SMALL CRITICAL DIMENSION FEATURES - Methods of filling features with low-resistivity tungsten layers having good fill without use of a nucleation layer are provided. In certain embodiments, the methods involve an optional treatment process prior to chemical vapor deposition of tungsten in the presence of a high partial pressure of hydrogen. According to various embodiments, the treatment process can involve a soaking step or a plasma treatment step. The resulting tungsten layer reduces overall contact resistance in advanced tungsten technology due to elimination of the conventional tungsten nucleation layer. | 01-30-2014 |
20140134827 | CONFORMAL FILM DEPOSITION FOR GAPFILL - A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD. | 05-15-2014 |
20140154883 | TUNGSTEN NUCLEATION PROCESS TO ENABLE LOW RESISTIVITY TUNGSTEN FEATURE FILL - Methods for depositing low resistivity tungsten in features of substrates in semiconductor processing are disclosed herein. Methods involve using a germanium-containing reducing agent during tungsten nucleation layer deposition to achieve thin, low resistivity nucleation layers. | 06-05-2014 |
20140162451 | METHODS FOR DEPOSITING ULTRA THIN LOW RESISTIVITY TUNGSTEN FILM FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS - Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process. | 06-12-2014 |
20150037972 | METHODS AND APPARATUSES FOR ATOMIC LAYER CLEANING OF CONTACTS AND VIAS - Described are cleaning methods for removing contaminants from an electrical contact interface of a partially fabricated semiconductor substrate. The methods may include introducing a halogen-containing species into a processing chamber, and forming an adsorption-limited layer, which includes halogen from the halogen-containing species, atop the electrical contact interface and/or the contaminants thereon. The methods may further include thereafter removing un-adsorbed halogen-containing species from the processing chamber and activating a reaction between the halogen of the adsorption-limited layer and the contaminants present on the electrical contact interface. The reaction may then result in the removal of at least a portion of the contaminants from the electrical contact interface. In some embodiments, the halogen adsorbed onto the surface and reacted may be fluorine. Also described herein are apparatuses having controllers for implementing such electrical contact interface cleaning techniques. | 02-05-2015 |
20150056803 | TUNGSTEN FEATURE FILL - Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs). | 02-26-2015 |