Patent application number | Description | Published |
20120258596 | Process of planarizing a wafer with a large step height and/or surface area features - A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the raised region. A second chemical mechanical polishing process is performed to planarize the wafer using the blanket stop layer as a stop layer when the layer is lower than or at a same level as the blanket stop layer or using the layer as a stop layer when the blanket stop layer is lower than or at a same level as the layer, or a selective dry etch is performed to remove the layer in the raised region. Thus, the layer in the raised region can be easily removed without occurrence of dishing in the non-raised region which is protected by the blanket stop layer. | 10-11-2012 |
20130032870 | METHODS OF FORMING A MULTI-TIERED SEMICONDUCTOR DEVICE AND APPARATUSES INCLUDING THE SAME - Methods of forming multi-tiered semiconductor devices are described, along with apparatuses that include them. In one such method, a silicide is formed in a tier of silicon, the silicide is removed, and a device is formed at least partially in a void that was occupied by the silicide. One such apparatus includes a tier of silicon with a void between tiers of dielectric material. Residual silicide is on the tier of silicon and/or on the tiers of dielectric material and a device is formed at least partially in the void. Additional embodiments are also described. | 02-07-2013 |
20140038414 | Process of planarizing a wafer with a large step height and/or surface area features - A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the raised region. A second chemical mechanical polishing process is performed to planarize the wafer using the blanket stop layer as a stop layer when the layer is lower than or at a same level as the blanket stop layer or using the layer as a stop layer when the blanket stop layer is lower than or at a same level as the layer, or a selective dry etch is performed to remove the layer in the raised region. Thus, the layer in the raised region can be easily removed without occurrence of dishing in the non-raised region which is protected by the blanket stop layer. | 02-06-2014 |
20150044860 | MULTI-TIERED SEMICONDUCTOR APPARATUSES INCLUDING RESIDUAL SILICIDE IN SEMICONDUCTOR TIER - Methods of forming multi-tiered semiconductor devices are described, along with apparatuses that include them. In one such method, a silicide is formed in a tier of silicon, the silicide is removed, and a device is formed at least partially in a void that was occupied by the silicide. One such apparatus includes a tier of silicon with a void between tiers of dielectric material. Residual silicide is on the tier of silicon and/or on the tiers of dielectric material and a device is formed at least partially in the void. Additional embodiments are also described. | 02-12-2015 |
Patent application number | Description | Published |
20080228437 | ESTIMATION OF GLOBAL POSITION OF A SENSOR NODE - Methods and apparatuses for locating a sensor node are disclosed. A representative apparatus, among others, includes a processing unit that receives sensor node data and object trajectory information data for an object. The sensor node data is related to the object's trajectory, and a data point in the object trajectory information data comprises a time stamp and the coordinates of a position. The position corresponds the location of the object at the given time. The processing unit is adapted to correlate at least a portion of the sensor node data with at least a portion of the object trajectory information data to determine an absolute position of the sensor node. | 09-18-2008 |
20110122730 | Apparatus and Method of Sniper Localization - An apparatus and method of sniper localization includes an internal clock; an acoustic sensor positioned in a known location and detecting pressure waves; a first processor determining the trajectory of the supersonic projectile, where the first processor includes a shock wave threshold detector receiving time series information and recording arrival times of shock wave components of the pressure waves; a blast threshold detector receiving the time series information and recording arrival times and amplitude information of blast wave components of the pressure waves; a discrimination processor discriminating between a blast wave, a shock wave, or neither, and storing arrival times of each of the potential blast wave components classified as the blast wave; and a localization estimation processor calculating an estimated trajectory of the projectile based on the blast wave and the shock wave arrival times and calculating an estimated firing position of the projectile. | 05-26-2011 |
20140103212 | Target Detector with Size Detection and Method Thereof - A method and system for detecting targets comprising at least one first receiver for receiving radiation, the radiation comprises beams of radiation spaced horizontally; at least one second receiver for receiving radiation, the radiation comprises beams of radiation spaced horizontally and vertically such that the beams of radiation received by the second receiver travel through different predetermined heights from the horizontal plane; at least one processor for receiving data from the first and second receivers, the at least one receiver operating to locate a target passing in the vicinity of the first and second receivers and determine the height of the target based upon the recordation of certain of the beams at a predetermined heights relative to the horizontal plane and the width of a target based upon the horizontal spacing of the beams. | 04-17-2014 |