Patent application number | Description | Published |
20090211706 | ETCHING ENDPOINT DETERMINATION METHOD - A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step. An endpoint of etching processing is determined based in the distances in the time-base direction obtained at the second step. | 08-27-2009 |
20100132888 | Plasma Processing Apparatus - A plasma processing apparatus includes a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device, a mass flow controller, a stage electrode receiving a workpiece, a high-frequency electrical source to, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters. | 06-03-2010 |
20100297783 | Plasma Processing Method - A method for performing a plasma process using a plasma processing apparatus which includes a vacuum process chamber, an exhaust device, a mass flow controller supplying a process gas, a stage electrode which receives and holds a workpiece by adsorption, a transfer device, and a high-frequency electrical source. The method includes a first step of performing the plasma process for the workpiece in the vacuum process chamber by a corresponding recipe of predetermined recipes, a second step of acquiring apparatus parameters showing the condition of the plasma processing apparatus when a specific recipe of the predetermined recipes is executed to diagnose whether the condition of the plasma processing apparatus is good or not based on the acquired apparatus parameters. | 11-25-2010 |
20110083808 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes. | 04-14-2011 |
20120085494 | Plasma Etching Apparatus - A plasma etching apparatus includes a vacuum processing chamber for performing plasma processing on a workpiece, a gas introducer, a high frequency power feeder, a spectroscope, and an arithmetic unit for determining an endpoint of etching of the workpiece. The arithmetic unit includes a regression line computing unit for computing a regression line on the basis of time-sequential data of luminous intensity of a specific wavelength sampled by the spectroscope, a distance computing unit for computing a distance from the time-sequential data to the regression line, a computing unit for calculating a distance in a time-base direction by computing a slope of the regression line, and the distance from the time-sequential data to the regression line, computed by the distance computing unit, and an endpoint determiner for outputting an endpoint determination signal on the basis of the distance in the time-base direction computed by the computing unit. | 04-12-2012 |
20140277626 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes. | 09-18-2014 |
Patent application number | Description | Published |
20090052069 | CAM FOLLOWER FOR LENS BARREL AND LENS BARREL - A lens barrel has a first group frame, cam followers each having a shaft portion having a straight hollow hole and a slidably contacting portion integral with the shaft portion, which are fixed to the first group frame and a rotating frame having a cam groove with which the cam followers are in slidable contact, which moves relatively to the first group frame. The hollow hole of the cam follower reaches the inside portion of the slidably contacting portion. The shaft portion is press-fit fixed in the shaft hole of the first group frame when an impact force is applied to the lens barrel, the possibility of damaging the frame member is little. | 02-26-2009 |
20090083570 | TRANSMISSION APPARATUS THAT TRANSMITS DATA ACCORDING TO A PROTOCOL, AND METHOD FOR MEASURING TIME IN THE TRANSMISSION APPARATUS - A transmission apparatus that transmits data according to a protocol has a timer, a memory, a processor, and a transmission unit. The processor stores, in the memory, type data indicating a single type of time from a plurality of types of time that are to be measured according to the protocol. The transmission unit transmits data according to the protocol and starts the measurement of time of the type indicated by the type data stored in the memory using the timer after the data has been transmitted. | 03-26-2009 |
20090135298 | DIGITAL CAMERA - A digital camera of the present invention has: an optical housing having a bending optical system for reflecting photographic object light entering along a first optical axis to a second optical axis direction perpendicular to the first optical axis to form an image on an image pickup device; a camera main body having a containing portion for containing the optical housing slidably only in the second optical axis direction and having support portions for supporting the optical housing provided on each of both side surfaces of the containing portion across the second optical axis of the bending optical system; and shock absorbing means provided between an inner surface of the containing portion of the camera main body in which the support portions are not provided and an outer surface of the optical housing facing thereto. | 05-28-2009 |
20090285238 | RECEIVING APPARATUS, RECEIVING METHOD, COMMUNICATION METHOD AND TRANSMISSION APPARATUS - A receiving apparatus receiving data separated into a plurality of fragments comprises a detection unit adapted to detect the fragment size of the fragments, and a management unit adapted to manage the arrival status of the plurality of received fragments using the detected fragment size as a unit. | 11-19-2009 |
20100223409 | BUS ARBITRATION APPARATUS AND METHOD - A bus arbitration apparatus according to this invention appropriately arbitrates bus rights of use between a plurality of masters and a plurality of slaves so as to efficiently perform requested data transfer. An arbiter A | 09-02-2010 |
20100309909 | COMMUNICATION APPARATUS, CONTROL METHOD FOR COMMUNICATION APPARATUS, AND COMPUTER PROGRAM - A communication apparatus for performing connection type communication includes a first memory configured to store pieces of communication endpoint information relating to communication endpoints of connection, and a moving device configured to move, among the pieces of communication endpoint information stored in the first memory, communication endpoint information of connection set in a disconnection wait state, from the first memory to a second memory. | 12-09-2010 |
20110219156 | BUS ARBITRATION APPARATUS AND METHOD - A bus arbitration apparatus according to this invention appropriately arbitrates bus rights of use between a plurality of masters and a plurality of slaves so as to efficiently perform requested data transfer. An arbiter A | 09-08-2011 |
20120081561 | DIGITAL CAMERA - A digital camera of the present invention has: an optical housing having a bending optical system for reflecting photographic object light entering along a first optical axis to a second optical axis direction perpendicular to the first optical axis to form an image on an image pickup device; a camera main body having a containing portion for containing the optical housing slidably only in the second optical axis direction and having support portions for supporting the optical housing provided on each of both sides surfaces of the containing portion across the second optical axis of the bending optical system; and a shock absorbing unit provided between an inner surface of the containing portion of the camera main body in which the support portions are not provided and an outer surface of the optical housing facing thereto. | 04-05-2012 |
20120081599 | DIGITAL CAMERA - A digital camera of the present invention has: an optical housing having a bending optical system for reflecting photographic object light entering along a first optical axis to a second optical axis direction perpendicular to the first optical axis to form an image on an image pickup device; a camera main body having a containing portion for containing the optical housing slidably only in the second optical axis direction and having support portions for supporting the optical housing provided on each of both sides surfaces of the containing portion across the second optical axis of the bending optical system; and a shock absorbing unit provided between an inner surface of the containing portion of the camera main body in which the support portions are not provided and an outer surface of the optical housing facing thereto. | 04-05-2012 |
20120081600 | DIGITAL CAMERA - A digital camera of the present invention has: an optical housing having a bending optical system for reflecting photographic object light entering along a first optical axis to a second optical axis direction perpendicular to the first optical axis to form an image on an image pickup device; a camera main body having a containing portion for containing the optical housing slidably only in the second optical axis direction and having support portions for supporting the optical housing provided on each of both sides surfaces of the containing portion across the second optical axis of the bending optical system; and a shock absorbing unit provided between an inner surface of the containing portion of the camera main body in which the support portions are not provided and an outer surface of the optical housing facing thereto. | 04-05-2012 |
20120290746 | DATA TRANSFER APPARATUS AND DATA TRANSFER METHOD - A packet accompanying data valid information is transferred at high efficiency within an integrated circuit or between integrated circuits. A character indicating data enable information is provided and an identifier indicating a data enable character is assigned onto the packet. When the data enable information is valid in series, the data enable characters are eliminated from the packet to be transferred. | 11-15-2012 |
20130156050 | DATA TRANSFER APPARATUS, DATA TRANSFER METHOD, AND INTER-CHIP COMMUNICATION SYSTEM - Transfer efficiency of data transfer in a single semiconductor device or between semiconductor devices is improved. A table is created by associating a combination of attribute information involved in data transfer with an identifier. When attribute information registered in the table is received, the attribute information is replaced with an identifier so that the information is compressed and transferred. Accordingly, transfer efficiency is increased in transmission or reception of a request and a response. | 06-20-2013 |
20130159574 | DATA TRANSFERRING APPARATUS AND DATA TRANSFERRING METHOD - A data transferring apparatus includes a receiving unit configured to receive a transfer request containing attribute information that indicates a type of data transfer, a buffer configured to store the transfer requests received by the receiving unit, a storing unit configured to associate the attribute information with a first identifier and store the attribute information, and a sending unit configured to preferentially transmit, out of the plurality of transfer requests stored in the buffer, a transfer request containing attribute information that corresponds to the attribute information stored in the storing unit, wherein the sending unit is configured to transmit the first identifier associated with the attribute information that corresponds to the attribute information contained in the transfer request in place of the attribute information of the transfer request. | 06-20-2013 |
20140204936 | TRANSMISSION DEVICE, RECEPTION DEVICE, INFORMATION PROCESSING SYSTEM,CONTROL METHOD AND COMMUNICATION METHOD - A data division unit of a serial transmission device divides transfer data to generate a plurality of divided data, a plurality of parallel-to-serial conversion units converts the divided data into serial data according to timing control provided by a transmission control unit to transmit the serial data to a plurality of data signal lines connected to the plurality of parallel-to-serial conversion units, a plurality of serial-to-parallel conversion units of a serial reception device receives the serial data from the data signal lines connected thereto to convert the serial data into parallel data, and a data restoration unit combines the parallel data, which are converted by the plurality of serial-to-parallel conversion units, to restore the transfer data in an order of completion of the conversion. | 07-24-2014 |
20140262029 | SEMICONDUCTOR ETCHING APPARATUS AND ANALYZING APPARATUS - An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element. | 09-18-2014 |
20150083328 | ANALYSIS METHOD AND SEMICONDUCTOR ETCHING APPARATUS - There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition. | 03-26-2015 |
Patent application number | Description | Published |
20090253222 | Etching process state judgment method and system therefor - An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process. | 10-08-2009 |
20110315661 | ETCHING APPARATUS, ANALYSIS APPARATUS, ETCHING TREATMENT METHOD, AND ETCHING TREATMENT PROGRAM - There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching. The etching apparatus includes: a lot/wafer/step-depending OES-data searching/acquiring function | 12-29-2011 |
20120018094 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing. | 01-26-2012 |
20120310403 | ETCHING APPARATUS, CONTROL SIMULATOR,AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C | 12-06-2012 |
20130119016 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, an actuator which controls a parameter constituting a plasma processing condition, N+1 correction amount calculating units which calculate a correction amount of a manipulated variable on the basis of a difference between a process monitor value monitored by the process monitor and a desired value of the process monitor and a correlation between the process monitor value and a manipulated variable, which is the parameter, the correlation having been acquired in advance, and N manipulated variable adding units that add a manipulated variable having a priority level next to an N-th manipulated variable. The N-th manipulated variable adding unit defines a correction amount calculated by the N+1-th correction amount calculating unit as the correction amount of an N+1-th manipulated variable. | 05-16-2013 |
20130173042 | SEMICONDUCTOR MANUFACTURING EQUIPMENT - Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio. | 07-04-2013 |
20140022540 | ANALYSIS METHOD, ANALYSIS DEVICE, AND ETCHING PROCESSING SYSTEM - Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber. | 01-23-2014 |
20140339193 | Plasma Processing Method - Method for carrying out plasma processing on a wafer under Run-to-Run control by using a plasma processing apparatus having a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, and an actuator which controls parameters which are constituent elements of a plasma processing condition. The method includes the steps of making one of the parameters a (N−1)th manipulated variable, calculating a first difference between a process monitor value in the plasma processing obtained by the process monitor and a desired value of the process monitor value in the plasma processing, calculating a correction amount of the (N−1)th manipulated variable on the basis of the first difference and a previously obtained correlation between the process monitor value in the plasma processing and the (N−1)th manipulated variable, wherein N is a natural number equal to or larger than 2. | 11-20-2014 |