Patent application number | Description | Published |
20080237793 | Semiconductor device having projection on lower electrode and method for forming the same - A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower electrode, and irradiating a gas containing silicon to the surface of the lower electrode to form a projection containing silicide by reacting the metal with the silicon in an island shape on the surface of the lower electrode. Then, a capacitor film is formed on the lower electrode and the projection, and an upper electrode is formed on the capacitor film. | 10-02-2008 |
20080277762 | Semiconductor device including capacitor including upper electrode covered with high density insulation film and production method thereof - A semiconductor device includes a lower electrode provided on a semiconductor substrate, an upper electrode provided on the lower electrode to overlap a part of the lower electrode, a first insulating film provided between the lower electrode and the upper electrode, and a second insulating film provided in contact with an upper part of the upper electrode and on the upper part of the lower electrode, and having a density higher than that of the first insulating film, the second insulating film covering a side surface and a top surface of the upper electrode. | 11-13-2008 |
20090184421 | SEMICONDUCTOR DEVICE WITH HIGH RELIABILITY AND MANUFACTURING METHOD THEREOF - A semiconductor device is provided, which includes a substrate, an insulator film formed over the substrate, and plural metal wirings with different widths containing copper as a main component and an impurity which is different from copper. The plural metal wirings includes a first metal wiring having a concentration profile where the concentration of the impurity metal increases from the center part of the stacking direction to the surface and the second metal wiring having a concentration profile where the concentration of the impurity metal decreases from the bottom surface of the stacking direction to the surface. Moreover, the width of the second metal wiring may be larger than the width of the first metal wiring. | 07-23-2009 |
20090294980 | SEMICONDUCTOR DEVICE HAVING WIRING LAYER - Provided is a semiconductor device having a wiring layer formed of damascene wiring. The semiconductor device includes: a first wiring having a width equal to or larger than 0.5 μm; a second wiring adjacent to the first wiring and arranged with a space less than 0.5 μm from the first wiring; and a third wiring adjacent to the second wiring and arranged with a space equal to or smaller than 0.5 μm from the first wiring. In the semiconductor device, the second wiring and the third wiring are structured to have the same electric potential. | 12-03-2009 |
20090305496 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided. | 12-10-2009 |
20100117191 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device that shows excellent manufacturing stability and has lower contact resistance, and a method for manufacturing the semiconductor device. | 05-13-2010 |
20110230051 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided. | 09-22-2011 |
20110318900 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulating film and the copper interconnect; a second insulating interlayer formed over the first insulating interlayer; and an electroconductive layer formed over the second insulating interlayer, wherein the top surface of at least one hillock highest of all hillocks is brought into contact with the lower surface of the second insulating interlayer is provided. | 12-29-2011 |
20120015517 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film. | 01-19-2012 |
20120231623 | METHOD OF MANUFACTURING A HIGH-RELIABILITY SEMICONDUCTOR DEVICE - A semiconductor device is provided, which includes a substrate, an insulator film formed over the substrate, and plural metal wirings with different widths containing copper as a main component and an impurity which is different from copper. The plural metal wirings includes a first metal wiring having a concentration profile where the concentration of the impurity metal increases from the center part of the stacking direction to the surface and the second metal wiring having a concentration profile where the concentration of the impurity metal decreases from the bottom surface of the stacking direction to the surface. Moreover, the width of the second metal wiring may be larger than the width of the first metal wiring. | 09-13-2012 |
20120292765 | SEMICONDUCTOR DEVICE HAVING WIRING LAYER - Provided is a semiconductor device having a wiring layer formed of damascene wiring. The semiconductor device includes: a first wiring having a width equal to or larger than 0.5 μm; a second wiring adjacent to the first wiring and arranged with a space less than 0.5 μm from the first wiring; and a third wiring adjacent to the second wiring and arranged with a space equal to or smaller than 0.5 μm from the first wiring. In the semiconductor device, the second wiring and the third wiring are structured to have the same electric potential. | 11-22-2012 |
20120321077 | CRYPTOGRAPHIC COMMUNICATION SYSTEM AND CRYPTOGRAPHIC COMMUNICATION METHOD - Provided is a cryptographic communication system including a first semiconductor device and a second semiconductor device. The first semiconductor device includes a common key generation unit that generates a common key CK(a) by using a unique code UC(a) and correction data CD(a), and an encryption unit that encrypts the common key CK(a) generated in the common key generation unit by using a public key PK(b) of the second semiconductor device. The second semiconductor device includes a secret key generation unit that generates a secret key SK(b) by using a unique code UC(b) and correction data CD(b), and a decryption unit that decrypts the common key CK(a) encrypted in the encryption unit by using the secret key SK(b). | 12-20-2012 |
20120324241 | SEMICONDUCTOR DEVICE - A semiconductor device in related art has a problem that security on confidential information stored is insufficient. A semiconductor device of the present invention has a unique code which is unique to a device and generates unique code corresponding information from the unique code. The semiconductor device has a memory region in which specific information obtained by encrypting confidential information is stored in a region associated with the unique code corresponding information. The specific information read from the memory region is encrypted with the unique code corresponding information to generate the confidential information. | 12-20-2012 |
20120324310 | SEMICONDUCTOR DEVICE AND METHOD OF WRITING DATA TO SEMICONDUCTOR DEVICE - A semiconductor device in related art has a problem that security at the time of writing data cannot be sufficiently assured. A semiconductor device of the present invention has: a unique code generating unit generating an initial unique code which is a value unique to a device and includes an error in a random bit; a first error correcting unit correcting an error in the initial unique code to generate an intermediate unique code; a second error correcting unit correcting an error in the intermediate unique code to generate a first determinate unique code; and a decrypting unit decrypting, with the first determinate unique code, transmission data obtained by encrypting confidential information with key information generated on the basis of the intermediate unique code by an external device to generate confidential information. | 12-20-2012 |
20130009305 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a first via and a first interconnect supplying a high current is provided in which a first surface having the first via and the first interconnect is planar. The semiconductor device has a first via penetrating a first substrate from a first surface of the first substrate and a first interconnect buried in the first surface of the first substrate and connected with one end of at least one first via. The first via has an inclined portion where an angle formed between a lateral side of the first via and the bottom of the first via is larger than an angle formed between a lateral side of the first interconnect and the bottom of the first interconnect. | 01-10-2013 |
20130207269 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device in which misalignment does not cause short-circuiting and inter-wiring capacitance is decreased. Plural wirings are provided in a first interlayer insulating layer. An air gap is made between at least one pair of wirings in the layer. A second interlayer insulating layer lies over the wirings and first interlayer insulating layer. The first bottom face of the second interlayer insulating layer is exposed to the air gap. When a pair of adjacent wirings whose distance is shortest are first wirings, the upper ends of the first interlayer insulating layer between the first wirings are in contact with the first wirings' side faces. The first bottom face is below the first wirings' upper faces. b/a≦0.5 holds where a represents the distance between the first wirings and b represents the width of the portion of the first interlayer insulating layer in contact with the first bottom face. | 08-15-2013 |
20140133652 | SEMICONDUCTOR DEVICE AND INFORMATION PROCESSING SYSTEM FOR ENCRYPTED COMMUNICATION - In a semiconductor device and an information processing system according to one embodiment, an external device generates external device unique information by using a unique code which is a value unique to the semiconductor device, and generates second information by encrypting the first information with the use of the external device unique information. The semiconductor device stores the second information and generates the principal device unique information independently of the external device, with the use of the unique code of the semiconductor device holding the second information, and decrypts the second information with the use of the principal device unique information to obtain the first information. | 05-15-2014 |
20140289538 | SEMICONDUCTOR DEVICE - A semiconductor device in related art has a problem that security on confidential information stored is insufficient. A semiconductor device of the present invention has a unique code which is unique to a device and generates unique code corresponding information from the unique code. The semiconductor device has a memory region in which specific information obtained by encrypting confidential information is stored in a region associated with the unique code corresponding information. The specific information read from the memory region is encrypted with the unique code corresponding information to generate the confidential information. | 09-25-2014 |
20150086016 | Encryption Key Providing Method, Semiconductor Integrated Circuit, and Encryption Key Management Device - The first device, which utilize a cipher, generates device unique data by a PUF, and the second device generates one pair of helper data and a device unique ID on the basis of the generated device unique data. The device unique data has fluctuations caused by the generation environment, and regarding the fluctuations as an error to the device unique ID, the helper data serves as correction data for correcting the error. The second device generates a Hash function from the device unique ID and the encryption key. The second device writes one of the helper data and the Hash function to the first device first, and after authenticating the first device by the write, the other of the helper data and the Hash function is written in the first device. Decrypting the encryption key, the first device is allowed to utilize the cipher. | 03-26-2015 |
20150207629 | SEMICONDUCTOR DEVICE AND METHOD OF WRITING DATA TO SEMICONDUCTOR DEVICE - A semiconductor device in related art has a problem that security at the time of writing data cannot be sufficiently assured. A semiconductor device of the present invention has: a unique code generating unit generating an initial unique code which is a value unique to a device and includes an error in a random bit; a first error correcting unit correcting an error in the initial unique code to generate an intermediate unique code; a second error correcting unit correcting an error in the intermediate unique code to generate a first determinate unique code; and a decrypting unit decrypting, with the first determinate unique code, transmission data obtained by encrypting confidential information with key information generated on the basis of the intermediate unique code by an external device to generate confidential information. | 07-23-2015 |
20150239355 | NON-CONTACT POWER SUPPLY METHOD AND NON-CONTACT POWER SUPPLY SYSTEM - It is intended to provide a safe non-contact charging environment that enables finding an electronic appliance that remains left in a vehicle before start of charging and preventing trouble that an electronic appliance breaks down by electromagnetic waves generated during charging by means of electromagnetic coupling. A process of checking to see that an electronic appliance remains left inside a vehicle, based on wireless communication information emitted by the electronic appliance left inside the vehicle is performed in advance. When it has been detected that an electronic appliance remains left, a charging current value is controlled according to an allowable current of the detected electronic appliance or an alert is generated to notify that the electronic appliance remains left. | 08-27-2015 |