Patent application number | Description | Published |
20110127525 | SEMICONDUCTOR DEVICE - An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×10 | 06-02-2011 |
20110127526 | NON-LINEAR ELEMENT, DISPLAY DEVICE INCLUDING NON-LINEAR ELEMENT, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE - A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×10 | 06-02-2011 |
20110133178 | SEMICONDUCTOR DEVICE - One object is to provide a p-channel transistor including an oxide semiconductor. Another object is to provide a complementary metal oxide semiconductor (CMOS) structure of an n-channel transistor including an oxide semiconductor and a p-channel transistor including an oxide semiconductor. A p-channel transistor including an oxide semiconductor includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer, and a source and drain electrode layers in contact with the oxide semiconductor layer. When the electron affinity and the band gap of an oxide semiconductor used for the oxide semiconductor layer in the semiconductor device, respectively, are χ (eV) and E | 06-09-2011 |
20110156022 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer is provided. The thickness of the oxide semiconductor layer is greater than or equal to 1 nm and less than or equal to 10 nm. The gate insulating layer satisfies a relation where ε | 06-30-2011 |
20110194327 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING SEMICONDUCTOR DEVICE - The number of wirings per unit memory cell is reduced by sharing a bit line by a writing transistor and a reading transistor. Data is written by turning on the writing transistor so that a potential of the bit line is supplied to a node where one of a source electrode and a drain electrode of the writing transistor and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of charge is held in the node. Data is read by using a reading signal line connected to one of a source electrode and a drain electrode of the reading transistor so that a predetermined reading potential is supplied to the reading signal line, and then detecting a potential of the bit line. | 08-11-2011 |
20110194331 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING SEMICONDUCTOR DEVICE - The number of wirings per unit memory cell is reduced by sharing a bit line by a writing transistor and a reading transistor. Data is written by turning on the writing transistor so that a potential of the bit line is supplied to a node where one of a source and drain electrodes of the writing transistor and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of charge is held in the node. Data is read by using a signal line connected to a capacitor as a reading signal line or a signal line connected to one of a source and drain electrodes of the reading transistor as a reading signal line so that a reading potential is supplied to the reading signal line, and then detecting a potential of the bit line. | 08-11-2011 |
20130140560 | SEMICONDUCTOR DEVICE - An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×10 | 06-06-2013 |
20140127874 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer is provided. The thickness of the oxide semiconductor layer is greater than or equal to 1 nm and less than or equal to 10 nm. The gate insulating layer satisfies a relation where ∈ | 05-08-2014 |
20140191232 | SEMICONDUCTOR DEVICE - An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×10 | 07-10-2014 |