Patent application number | Description | Published |
20130334560 | LIGHT EMITTING DIODE CHIP - The present invention relates to a light-emitting diode chip. According to the present invention, the light-emitting diode chip comprises: a substrate, the thickness of which is greater than 120 μm; and a light-emitting diode provided on the surface of the substrate, at one side thereof. | 12-19-2013 |
20140061709 | WAFER LEVEL LED PACKAGE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. | 03-06-2014 |
20140084322 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a light-emitting device and a manufacturing method thereof. A light-emitting device according to an exemplary embodiment of the present invention includes a base, a lighting element disposed on the base, the lighting element including an epitaxial layer and a substrate disposed on the epitaxial layer, a contact member disposed between the lighting element and the base, the contact member electrically connecting the lighting element and the base, and a lens disposed on the substrate. | 03-27-2014 |
20140151714 | GALLIUM NITRIDE SUBSTRATE AND METHOD FOR FABRICATING THE SAME - Exemplary embodiments of the present invention relate to a single-crystal substrate including a buffer layer including a nitride semiconductor, holes penetrating the buffer layer, and a single-crystal nitride semiconductor disposed on the buffer layer. | 06-05-2014 |
20140167086 | EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME - An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. | 06-19-2014 |
20140179043 | METHOD OF SEPARATING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer. | 06-26-2014 |
20140183526 | LIGHT DETECTION DEVICE - Exemplary embodiments of the present invention relates to a light detection device including a substrate, a non-porous layer disposed on the substrate, a light absorption layer disposed on the non-porous layer, the light absorption layer including pores formed in a surface thereof, a Schottky layer disposed on the surface of the light absorption layer and in the pores, and a first electrode layer disposed on the Schottky layer. | 07-03-2014 |
20140183548 | LIGHT DETECTION DEVICE - A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer. | 07-03-2014 |
20140183549 | PHOTO DETECTION DEVICE, PHOTO DETECTION PACKAGE INCLUDING THE PHOTO DETECTION DEVICE, AND PORTABLE DEVICE INCLUDING THE PHOTO DETECTION PACKAGE - Exemplary embodiments of the present invention relate to a photo detection device including a substrate, a first light absorption layer disposed on the substrate, a second light absorption layer disposed in a first region on the first light absorption layer, a third light absorption layer disposed in a second region on the second light absorption layer, and a first electrode layer disposed on each of the first, the second, and the third light absorption layers. | 07-03-2014 |
20140197454 | PHOTO DETECTION DEVICE - TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer. | 07-17-2014 |
20140335677 | METHOD FOR SEPARATING EPITAXIAL LAYER FROM GROWTH SUBSTRATE - The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on the epitaxial layer, contacting a bonding substrate onto the bonding layer, and then heating the bonding layer to a bonding temperature for joining the epitaxial layer and the bonding substrate; and cooling the bonding layer after the heating of the boding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer, and the epitaxial layer is separated from the growth substrate, wherein the separating the epitaxial layer from the growth substrate starts with separation from the at least one layer where the notch is formed. | 11-13-2014 |
20140361327 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided. | 12-11-2014 |
20140367718 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a light-emitting device and a manufacturing method thereof. A light-emitting device according to a preferred embodiment of the disclosure comprises: a frame portion having a bottom and a sidewall; a light-emitting portion which is disposed on the frame portion and emits light; and a window portion disposed over the frame portion so as to cover the light-emitting portion. | 12-18-2014 |
20150069444 | LIGHT EMITTING DIODE - A light emitting diode and a method of fabricating the same, the light emitting diode including a substrate, a semiconductor layer formed on one surface of the substrate, and an anti-reflection element formed on the other surface of the substrate and including a nano-pattern. The anti-reflection element is interposed between the substrate and air. | 03-12-2015 |
20150084084 | LIGHT EMITTING DIODE AND LED MODULE HAVING THE SAME - Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part. | 03-26-2015 |
20150084085 | LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME - A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed. | 03-26-2015 |
20150125355 | MULTI-PURPOSE CONSERVATION APPARATUS - Provided is a multi-purpose conservation apparatus. The multi-purpose conservation apparatus includes a storage case, a light source module disposed in the storage case and configured to selectively remove a harmful gas in the storage case, and a control unit configured to control intensity of radiation of the light source module according to internal environmental data of the storage case. Accordingly, the intensity of radiation of the light source module can be adjusted according to the internal environmental data of the storage case, efficiently adjusting a level of photocatalysis. | 05-07-2015 |
20150158741 | WATER PURIFICATION SYSTEM USING ULTRAVIOLET LEDS - The present invention relates to a portable water purification system by means of UV LEDs. Provided according to the present invention is a portable water purification system by means of UV LEDs comprising: a support member; a plurality of LEDs mounted on the surface of the support member; a solid filter provided with a through-path into which the support member is inserted; and a cover, attached to one end of the solid filter, for sealing the through-path of the solid filter. | 06-11-2015 |
20150173379 | HORMESIS INDUCING DEVICE FOR FRUITS AND VEGETABLES - Provided is a hormesis inducing device for fruits and vegetables that includes: a control unit which determines the strength of stimulus according to biological information about the fruits and vegetables that are harvested or growing and which controls at least one from among a kind of light, a quantity of the light, an irradiation time of the light, a wavelength of the light, and a temperature based on the determined strength of the stimulus; and a stimulus generation unit which applies light to the fruits and the vegetables based on the determined strength of the stimulus or adjusts and applies the temperature. Thereby, individually optimized hormesis inducing conditions can be provided for various kinds of vegetables and fruits. | 06-25-2015 |
20150174528 | APPARATUS FOR CLEANING FLUID - Provided is an apparatus for cleaning a fluid using an ultraviolet light-emitting diode. The apparatus includes an outer case, a fluid cleaning filter disposed in the outer case and filters the fluid introduced, a photocatalyst coated on a surface of the fluid cleaning filter, and a first light source unit mounted on the outer case to face a rear surface of the fluid cleaning filter in a direction in which the fluid is introduced, and emits light having a plurality of wavelength bands toward the rear surface of the fluid cleaning filter. Since the apparatus may have high sterilization and deodorization effects by emitting light having a plurality of wavelength bands and may improve filter reuse efficiency using a filter on which a photocatalyst is coated, the filter may be semi-permanently used and fluid cleaning efficiency may be improved. | 06-25-2015 |
20150179875 | TEMPLATE FOR GROWING SEMICONDUCTOR, METHOD OF SEPARATING GROWTH SUBSTRATE AND METHOD OF FABRICATING LIGHT EMITTING DEVICE USING THE SAME - A template for growing a semiconductor, a method of separating a growth substrate and a method of fabricating a light emitting device using the same are disclosed. The template for growing a semiconductor includes a growth substrate including a nitride substrate; a seed layer disposed on the growth substrate and including at least one trench; and a growth stop layer disposed on a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench. | 06-25-2015 |
20150200230 | WAFER LEVEL LIGHT-EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING SAME - Disclosed are a light emitting diode array on a wafer level and a method of forming the same. The light emitting diode array includes a growth substrate; a plurality of light emitting diodes arranged on the substrate, wherein each of the plurality of light emitting diodes has a first semiconductor layer, an active layer and a second semiconductor layer; and a plurality of upper electrodes arranged on the plurality of light emitting diodes and formed of an identical material, wherein each of the plurality of upper electrodes is electrically connected to the first semiconductor layer of a respective one of the light emitting diodes. At least one of the upper electrodes is electrically connected to the second semiconductor layer of an adjacent one of the light emitting diodes, and another of the upper electrodes is insulated from the second semiconductor layer of an adjacent one of the light emitting diodes. Accordingly, it is possible to provide a light emitting diode array that can be driven under at a high voltage and simplify a forming process thereof. | 07-16-2015 |
20150200334 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers. | 07-16-2015 |
20150228839 | PHOTO DETECTION DEVICE, PHOTO DETECTION PACKAGE INCLUDING THE PHOTO DETECTION DEVICE, AND PORTABLE DEVICE INCLUDING THE PHOTO DETECTION PACKAGE - A photo detection package including a package body configured to have an upward opened groove unit formed in the package body, a photo detection device mounted on a bottom surface of the groove unit and electrically connected externally, and a Light-Emitting Diode (LED) mounted on an inner surface of the groove unit that is formed of an inclined surface on a periphery of the bottom surface and electrically connected externally. | 08-13-2015 |
20150255504 | WAFER LEVEL LIGHT-EMITTING DIODE ARRAY - A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes. | 09-10-2015 |
20150270442 | LIGHT-EMITTING DIODE AND APPLICATION THEREFOR - A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided. | 09-24-2015 |
20150280086 | WAFER LEVEL LIGHT-EMITTING DIODE ARRAY - A wafer level light-emitting diode (LED) array includes: a growth substrate; a plurality of LEDs arranged over the substrate, each including a first semiconductor layer, an activation layer, and a second semiconductor layer; a plurality of upper electrodes formed from a common material and electrically connected to the first semiconductor layers of the corresponding LEDs; and first and second pads arranged over the upper electrodes. The LEDs are connected in series by the upper electrodes, the first pad is electrically connected to an input LED from among the LEDs connected in series, and the second pad is electrically connected to an output LED from among the LEDs connected in series. Accordingly, a flip chip-type LED array can be provided which can be driven with a high voltage. | 10-01-2015 |
20150287762 | LIGHT-EMITTING DIODE AND APPLICATION THEREFOR - A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided. | 10-08-2015 |
20150287888 | LIGHT-EMITTING DIODE AND APPLICATION THEREFOR - A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided. | 10-08-2015 |
20150295132 | EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME - An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void. | 10-15-2015 |
20150295139 | LIGHT-EMITTING DIODE PACKAGE - The present invention relates to a light-emitting diode package. According to the present invention, a light-emitting diode package comprises: a substrate for growth; a passivation layer formed on a surface of one side of the substrate for growth; and a package substrate having a main body portion and a wall portion, wherein the wall portion is formed on the main body portion. At least the space formed among the main body portion, the wall portion and the passivation layer is sealed from the outside. | 10-15-2015 |
20150325752 | LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME - A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed. | 11-12-2015 |
20150349192 | LIGHT DETECTION DEVICE - A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the light absorption layer including pores formed in a surface thereof, forming a Schottky layer on the surface of the light absorption layer and in the pores thereof, and forming a first electrode layer on the Schottky layer. | 12-03-2015 |
20150380620 | LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME - Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode. | 12-31-2015 |
20150380621 | LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE - Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module. | 12-31-2015 |
20160036952 | STERILIZING APPARATUS FOR PORTABLE TERMINAL - Disclosed herein is a sterilization apparatus for a portable terminal, including a casing configured to receive the portable terminal and a UV LED provided in the casing. The sterilization apparatus can be always carried along with a portable terminal because the sterilization apparatus is constructed using a casing or a cover attached to the portable terminal. Accordingly, the portable terminal can be easily sterilized while in motion without being limited to the place. | 02-04-2016 |
20160043282 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided. | 02-11-2016 |
20160072011 | LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME - Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode. | 03-10-2016 |