Dae-Shik
Dae-Shik Kim, Suwon-Si KR
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20090273869 | Electrostatic discharge protection diode - Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region. | 11-05-2009 |
20100200945 | Schottky diode and method of fabricating the same - A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction. | 08-12-2010 |
Dae-Shik Kim, Andover, MA US
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20120190848 | METHODS AND COMPOUNDS USEFUL IN THE SYNTHESIS OF FUSED AMINODIHYDROTHIAZINE DERIVATIVES - Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme. | 07-26-2012 |
20130197244 | METHODS AND COMPOUNDS USEFUL IN THE SYNTHESIS OF FUSED AMINODIHYDROTHIAZINE DERIVATIVES - Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme. | 08-01-2013 |
20140309429 | METHODS AND COMPOUNDS USEFUL IN THE SYNTHESIS OF FUSEDAMINODIHYDROTHIAZINE DERIVATIVES - Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme. | 10-16-2014 |
Dae-Shik Kim, Hwaseong-Si KR
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20150035024 | TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A transistor includes a substrate, a gate structure and impurity regions. The substrate is divided into a field region and an active region by an isolation layer pattern. The field region has the isolation layer pattern thereon, and the active region has no isolation layer pattern thereon. The gate structure includes a central portion and an edge portion. The central portion is on a middle portion of the active region along a first direction and has a first width in a second direction substantially perpendicular to the first direction. The edge portion is on at least one end portion of the active region in the first direction and connected to the central portion and has a second width smaller than the first width in the second direction. The impurity regions are at upper portions of the active region adjacent to both end portions of the gate structure in the second direction. | 02-05-2015 |
20150035031 | MAGNETIC RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - In an MRAM device, the MRAM includes a magnetic tunnel junction (MTJ) structure and a protection layer on a sidewall of the MTJ structure. The protection layer includes a fluorinated metal oxide. When an MRAM device in accordance with example embodiments is manufactured, a metal layer may be formed to cover a MTJ structure. The metal layer may be oxidized and fluorinated to form the protection layer. A free layer pattern included in the MTJ structure may not be oxidized and the metal layer may be fully oxidized. Because the free layer pattern is not oxidized, the MTJ structure has a good TMR. Because the metal layer is fully oxidized, the MRAM device may be prevented from electrical short between the free layer pattern and a fixed layer pattern. | 02-05-2015 |
Dae-Shik Seo, Seoul KR
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20120182398 | APPARATUS FOR OBTAINING STATUS INFORMATION OF CRYSTALLINE LENS AND EQUIPMENT INCLUDING THE SAME - Provided are an apparatus for obtaining status information of a crystalline lens and equipment including the same. The apparatus generates a reference light and directs the reference light to be perpendicularly incident to the crystalline lens. At least one light receiving unit that is disposed beyond a visual field of the eyeball is configured to directly receive scattered lights generated when the reference light incident from the light source unit to the crystalline lens is scattered against the crystalline lens. The apparatus calculates thickness information of the crystalline lens using information about the scattered lights received by the at least one light receiving unit. | 07-19-2012 |