Czornomaz
Lukas Czornomaz, Toulouse FR
Patent application number | Description | Published |
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20130181726 | TOUCH SURFACE AND METHOD OF MANUFACTURING SAME - A device for detecting and quantifying a force applied on a surface comprising a test specimen, an electrically insulating substrate, a first electrode bound to the substrate, a second electrode, an assembly of conductive or semi-conductive nanoparticles in contact with the two electrodes, and a measurement device. The measurement device provides proportional information with respect to an electrical property of the nanoparticles assembly. The electrical property is measured between the first and second electrode. The test specimen is the nanoparticles assembly itself and the electrical property is sensitive to the distance between the nanoparticles of the assembly. The invention uses the nanoparticles assembly itself as a test specimen and allows a force to be quantified even if the nanoparticles assembly is deposited on a rigid substrate. | 07-18-2013 |
Lukas Czornomaz, Rueschlikon CH
Patent application number | Description | Published |
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20140035001 | COMPOUND SEMICONDUCTOR STRUCTURE - A semiconductor structure ( | 02-06-2014 |
Lukas Czornomaz, Zurich CH
Patent application number | Description | Published |
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20150061078 | COMPOUND SEMICONDUCTOR STRUCTURE - A semiconductor structure comprises a substrate comprising a first crystalline semiconductor material, a dielectric layer, above the substrate, defining an opening, a second crystalline semiconductor material at least partially filling the opening, and a crystalline interlayer between the substrate and the second crystalline semiconductor material. The first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched, and the crystalline interlayer comprises an oxygen compound. A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening. The crystalline semiconductor materials are lattice mismatched, and the crystalline interlayer comprises an oxygen compound. | 03-05-2015 |