Croon
Jeroen Antoon Croon, Waalre NL
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20130320400 | HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed. | 12-05-2013 |
Jeroen Antoon Croon, Eindhoven NL
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20140167064 | GaN HEMTs AND GaN DIODES - A GaN hetereojunction structure has a three-layer dielectric structure. The lowermost and middle portions of the gate electrode together define the gate foot, and this is associated with two dielectric layers. A thinner first dielectric layer is adjacent the gate edge at the bottom of the gate electrode. The second dielectric layer corresponds to the layer in the conventional structure, and it is level with the main portion of the gate foot. | 06-19-2014 |
20150357456 | SEMICONDUCTOR HETEROJUNCTION DEVICE - In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first layer having a first semiconductor disposed on top of the substrate; a second layer has a second semiconductor is disposed on top of the first layer defining an interface between them. The second semiconductor differs from the first semiconductor such that a 2D Electron Gas forms adjacent to the interface. A first terminal couples to a first area of the interface between the first and second layers and a second terminal couples to a second area of the interface between the first and second layers; an electrically conducting channel comprises a metal or a region of the first layer with a higher defect density than another region of the first layer. The channel connects the second terminal and a region of the first layer such that electric charge can flow between them. | 12-10-2015 |
Marco Croon, Knokke-Heist BE
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20150369516 | FACILITY FOR PRODUCING A HOT LIQUID, IN PARTICULAR HOT WATER - A facility for producing a hot liquid comprising a primary exchanger extending into a vessel, said primary exchanger being formed by a substantially cylindrical inner wall and a substantially outer wall, at least one of which having at least two circular ribs. | 12-24-2015 |