Patent application number | Description | Published |
20080283490 | PROTECTION LAYER FOR FABRICATING A SOLAR CELL - A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer. | 11-20-2008 |
20080314443 | BACK-CONTACT SOLAR CELL FOR HIGH POWER-OVER-WEIGHT APPLICATIONS - A solar cell is described. The solar cell is fabricated on a substrate, the substrate having a front surface and a back surface. The substrate includes, at the front surface, a first region having a first global thickness and a second region having a second global thickness. The second global thickness is greater than the first global thickness. A plurality of alternating n-type and p-type doped regions is disposed at the back surface of the substrate. | 12-25-2008 |
20100071765 | METHOD FOR FABRICATING A SOLAR CELL USING A DIRECT-PATTERN PIN-HOLE-FREE MASKING LAYER - A method for fabricating a solar cell is described. The method includes first providing a substrate having a dielectric layer disposed thereon. A pin-hole-free masking layer is then formed above the dielectric layer. Finally, without the use of a mask, the pin-hole-free masking layer is patterned to form a patterned pin-hole-free masking layer. | 03-25-2010 |
20100129955 | PROTECTION LAYER FOR FABRICATING A SOLAR CELL - A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer. | 05-27-2010 |
20110126898 | SOLAR CELL CONTACT FORMATION USING LASER ABLATION - The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes. | 06-02-2011 |
20110214719 | METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF - Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers. | 09-08-2011 |
20110240105 | LEAKAGE PATHWAY LAYER FOR SOLAR CELL - Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described. | 10-06-2011 |
20140305501 | METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF - Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers. | 10-16-2014 |
Patent application number | Description | Published |
20140080251 | HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL - A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells. | 03-20-2014 |
20140295608 | METHOD OF FORMING EMITTERS FOR A BACK-CONTACT SOLAR CELL - Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing. | 10-02-2014 |
20150087100 | METHOD OF FORMING EMITTERS FOR A BACK-CONTACT SOLAR CELL - Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing. | 03-26-2015 |
20150144197 | HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL - A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells. | 05-28-2015 |
20160071996 | SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL - Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate. | 03-10-2016 |
Patent application number | Description | Published |
20110284986 | BYPASS DIODE FOR A SOLAR CELL - Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type. | 11-24-2011 |
20120171799 | BYPASS DIODE FOR A SOLAR CELL - Methods of fabricating bypass diodes for solar cells are described. In one embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region. | 07-05-2012 |
20120266951 | METHOD OF FORMING EMITTERS FOR A BACK-CONTACT SOLAR CELL - Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing. | 10-25-2012 |
20130164878 | HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL - A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells. | 06-27-2013 |
20130164879 | HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL - A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells. | 06-27-2013 |
20130247965 | SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL - Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate. | 09-26-2013 |
20140053888 | RADIALLY ARRANGED METAL CONTACT FINGERS FOR SOLAR CELLS - A solar cell includes negative metal contact fingers and positive metal contact fingers. The negative metal contact fingers are interdigitated with the positive metal contact fingers. The metal contact fingers, both positive and negative, have a radial design where they radially extend to surround at least 25% of a perimeter of a corresponding contact pad. The metal contact fingers have bend points, which collectively form a radial pattern with a center point within the contact pad. Exactly two metal contact pads merge into a single leading metal contact pad that is wider than either of the exactly two metal contact pads. | 02-27-2014 |
20140166093 | SOLAR CELL EMITTER REGION FABRICATION USING N-TYPE DOPED SILICON NANO-PARTICLES - Methods of fabricating solar cell emitter regions using N-type doped silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. At least a portion of the P-type dopant-containing layer is mixed with at least a portion of each of the plurality of regions of N-type doped silicon nano-particles. | 06-19-2014 |
20140166094 | SOLAR CELL EMITTER REGION FABRICATION USING ETCH RESISTANT FILM - Methods of fabricating solar cell emitter regions using etch resistant films and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a plurality of regions of N-type doped silicon nano-particles on a first surface of a substrate of the solar cell. A P-type dopant-containing layer is formed on the plurality of regions of N-type doped silicon nano-particles and on the first surface of the substrate between the regions of N-type doped silicon nano-particles. A capping layer is formed on the P-type dopant-containing layer. An etch resistant layer is formed on the capping layer. A second surface of the substrate, opposite the first surface, is etched to texturize the second surface of the substrate. The etch resistant layer protects the capping layer and the P-type dopant-containing layer during the etching. | 06-19-2014 |
20150243803 | SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL - Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate. | 08-27-2015 |
Patent application number | Description | Published |
20140014499 | DEPOSITION SYSTEM WITH ELECTRICALLY ISOLATED PALLET AND ANODE ASSEMBLIES - A system for substrate deposition is disclosed. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer. | 01-16-2014 |
20150280028 | SOLAR CELL HAVING A PLURALITY OF SUB-CELLS COUPLED BY A METALLIZATION STRUCTURE - Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure. | 10-01-2015 |
20150280641 | HIGH VOLTAGE SOLAR MODULES - A photovoltaic module can include a high voltage photovoltaic laminate that include a plurality of high voltage photovoltaic cells with each of the high voltage photovoltaic cells including a plurality of sub-cells. A boost-less conversion device can be configured to convert a first voltage from the high voltage photovoltaic laminate to a second voltage. | 10-01-2015 |
20150380577 | FIRING METAL FOR SOLAR CELLS - A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. Selective firing of a conductive paste can be used to form a conductive contact for a solar cell. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive paste that has a top and bottom portion with the top portion having particles coalesced together. | 12-31-2015 |
20160064576 | LEAKAGE PATHWAY LAYER FOR SOLAR CELL - Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described. | 03-03-2016 |
Patent application number | Description | Published |
20080225842 | METHOD AND SYSTEM FOR ACCELERATING TRANSMISSION OF DATA BETWEEN NETWORK DEVICES - A method and system for transferring data between a sender and a receiver in a packet-based network is disclosed. The method comprises establishing a data channel, establishing a feedback channel, sending data to the receiver over the data channel, sending an acknowledgment to a sender on the feedback channel at a predetermined interval, using the acknowledgment to track data sent successfully and unsuccessfully to the receiver, resending data unsuccessfully sent to the receiver, and self-tuning to optimize throughput based upon the acknowledgement and react to changing network conditions. | 09-18-2008 |
20120259989 | TELECOMMUNICATIONS PROTOCOL WITH PID CONTROL OF DATA TRANSMISSION RATE - A computer data transmission system is provided with proportional-integral-derivative (PID) control over a data transmission rate so as to maximize use of available bandwidth of a datagram-based network. A data channel and a separate feedback channel are established between the sender and receiver units of the system. The sender unit coupled to the data and feedback channels sends datagrams over the data channel to the receiver continuously until a source of data is exhausted or paused by the receiver unit. The receiver unit sends acknowledgment messages over the feedback channel to the sender unit at predetermined intervals. A PID controller in the sender unit uses the information provided in the acknowledgment messages to track unsuccessfully transmitted datagrams and to adapt the data transmission rate to any changing network transfer conditions. In particular, the rate of datagram loss may be used as a PID process variable to control an inter-datagram delay of the sender. There may also be absolute speed and transmission rate acceleration/deceleration limits constraining the PID control. PID control may also be adapted for data compression control, datagram block sizes, and degree of redundancy in the datagrams sent. | 10-11-2012 |
20130054819 | METHOD AND SYSTEM FOR ACCELERATING TRANSMISSION OF DATA BETWEEN NETWORK DEVICES - A method and system for transferring data between a sender and a receiver in a packet-based network is disclosed. The method comprises establishing a data channel, establishing a feedback channel, sending data to the receiver over the data channel, sending an acknowledgment to a sender on the feedback channel at a predetermined interval, using the acknowledgment to track data sent successfully and unsuccessfully to the receiver, resending data unsuccessfully sent to the receiver, and self-tuning to optimize throughput based upon the acknowledgement and react to changing network conditions. | 02-28-2013 |
20150117201 | DATA TRANSMISSION SYSTEM FOR NETWORKS WITH NON-FULL-DUPLEX OR ASYMMETRIC TRANSPORT - A data transfer method and system are provided for networks having gateway-mediated asymmetric transport. Separate data and feedback channels are established between sender and receiver units, along with a gateway feedback channel between a gateway and the sender. The sender transmits datagrams to the gateway in temporal chunks corresponding to the asymmetric transport's timing to keep the gateway's buffer at an optimum fill for maximal throughput without transmit-end packet drops. The receiver acknowledges those datagrams that have been successfully received and identifies any missing or corrupt datagrams. At least some messages include timing information indicative of network latency and congestion. The sender resends datagrams identified as missing or corrupt. The sender self-tunes its transmission rate in reaction to changing network conditions, based upon gateway buffer fill, network latency and datagram loss rate to keep datagram loss rate below a specified upper bound. | 04-30-2015 |
20150121161 | FAULT-TOLERANT DATA TRANSMISSION SYSTEM FOR NETWORKS WITH NON-FULL-DUPLEX OR ASYMMETRIC TRANSPORT - In a data transfer method and system for networks having gateway-mediated asymmetric transport, data and feedback channels are established between sender and receiver, along with a gateway feedback channel between gateway and sender. Cohorts of datagrams are transformed using fault-tolerant coding to create chapters whose size correspond to the asymmetric transport's timing. The sender transmits chapters in chunks at a rate to keep the gateway at an optimum fill for maximal throughput without transmit-end packet drops. The receiver reconstructs complete cohorts of original datagrams from a received subset of the transformed datagrams. The receiver acknowledges successfully recovered cohorts and identifies missing or corrupt datagrams of a chapter whenever recovery is unsuccessful. The sender resends sufficient lost datagrams to allow cohort recovery. The sender self-tunes its transmission rate based upon gateway fill, network latency and datagram loss rate to keep datagram loss rate below an upper bound. | 04-30-2015 |
Patent application number | Description | Published |
20080263089 | Transaction-Based Storage System and Method That Uses Variable Sized Objects to Store Data - The present invention provides a storage system for storing variable sized objects. The storage system is preferably a transaction-based system that uses variable sized objects to store data. The storage system is preferably implemented using arrays disks that are arranged in ranks. Each rank includes multiple stripes. Each stripe may be read and written as a convenient unit for maximum performance. A rank manager is able to dynamically configure the ranks to adjust for failed and added disks by selectively shortening and lengthening the stripes. The storage system may include a stripe space table that contains entries describing the amount of space used in each stripe. An object map provides entries for each object in the storage system describing the location (e.g., rank, stripe and offset values), the length and version of the object. A volume index translates regions of logical storage into object identifiers. The storage system may implement various types of formats such as I-node, binary tree and extendible hashing formats. | 10-23-2008 |
20090204859 | Systems, methods and computer program products including features for coding and/or recovering data - Systems and methods are disclosed for processing data. In one exemplary implementation, there is provided a method of generating H output data streams from W data input streams produced from input data. Moreover, the method may include generating the H discrete output data streams via application of the W data inputs to one or more transforming components or processes having specified mathematic operations and/or a generator matrix functionality, wherein the W data inputs are recoverable via a recovery process capable of reproducing the W data inputs from a subset (any W members) of the H output data streams. Further exemplary implementations may comprise a transformation process that includes producing an H-sized intermediary for each of the W inputs, combining the H-sized intermediaries into an H-sized result, and processing the H-sized result into the H output data streams. | 08-13-2009 |
20100205231 | TRANSACTION-BASED STORAGE SYSTEM AND METHOD THAT USES VARIABLE SIZED OBJECTS TO STORE DATA - Aspects of the innovations herein are consistent with a storage system for storing variable sized objects. The storage system may be a transaction-based system that uses variable sized objects to store data. The storage system may be implemented using arrays disks that are arranged in ranks. Each rank may include multiple stripes. Each stripe may be read and written as a convenient unit for maximum performance. A rank manager may be provided to dynamically configure the ranks to adjust for failed and added disks by selectively shortening and lengthening the stripes. The storage system may include a stripe space table that contains entries describing the amount of space used in each stripe. An object map may provide entries for each object in the storage system describing the location (e.g., rank, stripe and offset values), the length and version of the object. | 08-12-2010 |
20100288832 | SYSTEM AND METHOD FOR CONSUMER CONTROL OVER CARD-BASED TRANSACTIONS - A system and method for consumer control over card-based transactions and associated accounts. An interface is provided between a merchant or the merchant's bank and the bank or banks at which the consumer has accounts for card-based transactions. The interface acts as an intermediary which is accessible to the consumer so that the consumer may place a variety of controls on card-based transactions. For example, multiple transaction cards may be linked to a single credit account with each card having a different credit limit. As another example, each transaction card may be restricted to a particular merchant. As yet another example, a consumer may link several credit and/or debit accounts to a single transaction card; the consumer may pre-select criteria to be utilized for directing charges for a particular transaction to be applied the different accounts. The consumer may access the interface via a web site or a telephone for making changes and receiving account information. Flexibility and control over the use of transaction cards is, therefore, provided for card-based transactions and for debit and credit accounts used in connection with such card-based transactions. | 11-18-2010 |
20120123933 | SYSTEM AND METHOD FOR CONSUMER CONTROL OVER CARD-BASED TRANSACTIONS - A system and method for consumer control over card-based transactions and associated accounts. An interface is provided between a merchant or the merchant's bank and the bank or banks at which the consumer has accounts for card-based transactions. The interface acts as an intermediary, accessible to the consumer so that the consumer may place a variety of controls on card-based transactions. Multiple transaction cards may be linked to a single credit account with each card having a different credit limit, such that the controls comprise restricting each transaction card to a particular merchant, linking, by the consumer, several credit and/or debit accounts to a single transaction card, and pre-selecting a criteria to be utilized for directing charges for a particular transaction to be applied the different accounts. The consumer may access the interface via a web site or telephone for making changes and receiving account information. | 05-17-2012 |
20120123934 | SYSTEM AND METHOD FOR CONSUMER CONTROL OVER CARD-BASED TRANSACTIONS - A system and method for consumer control over card-based transactions and associated accounts. An interface is provided between a merchant or the merchant's bank and the bank or banks at which the consumer has accounts for card-based transactions. The interface acts as an intermediary, accessible to the consumer so that the consumer may place a variety of controls on card-based transactions. Multiple transaction cards may be linked to a single credit account with each card having a different credit limit, such that the controls comprise restricting each transaction card to a particular merchant, linking, by the consumer, several credit and/or debit accounts to a single transaction card, and pre-selecting a criteria to be utilized for directing charges for a particular transaction to be applied the different accounts. The consumer may access the interface via a web site or telephone for making changes and receiving account information. | 05-17-2012 |
Patent application number | Description | Published |
20080293942 | Methods of Preparing 2-Imidazol-1-Yl-4-Methyl-6-Pyrrolidin-2-Yl-Pyrimidine and 4-(1-Alkylpyrrolidin-2-Yl)-2-(1H-Imidazol-1-Yl)-6-Methylpyrimidine Derivatives - The present invention is directed to a novel, high yield method for preparing 2-imidazol-1-yl-4-methyl-6-pyrrolidin-2-yl-pyrimidine, particularly to a method of preparing 4-(1-alkylpyrrolidin-2-yl)-2-(1H-imidazol-1-yl)-6-methylpyrimidine, more particularly, 2-(2-(2-(1H-imidazol-1-yl)-6-methylpyrimidin-4-yl)pyrrolidrn-1-yl)-N-(benzo[d][1,3]dioxol-5-yh-nethyl)-N-methylethanamine. These compounds and pharmaceutical compositions thereof are inhibitors of nitric oxide synthase, are selective for inducible nitric oxide synthase, and are useful in treating diseases and disorders including inflammation and pain. | 11-27-2008 |
20100094021 | NOVEL METHOD OF PREPARATION OF 5-CHLORO-3-IMIDAZOL-1-YL-[1,2,4]THIADIAZOLE AND (3-IMIDAZOL-1-YL-[1,2,4]THIADIAZOL-5YL)-DIALKYL-AMINES - The present invention discloses a novel method for preparing 3-imidazol-1-yl-[1,2,4]thiadiazole derivatives, particularly to a method of preparing 5-halo-3-imidazol-1-yl-[1,2,4]thiadiazole, more particularly (3-imidazol-1-yl-[1,2,4]thiadiazol-5-yl)-dialkyl-amines, that afford a high yield of pure product. | 04-15-2010 |