Corona
Alberto Corona, Vercelli IT
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20140024859 | PROCESS FOR THE PRODUCTION OF HEXAMETHLENEDIAMINE - It is described a process for the production of hexamethylenediamine by hydrogenation of adiponitrile, comprising an improved step of regeneration of the catalyst. Also described are an equipment for the production of hexamethylenediamine, and a washing apparatus ( | 01-23-2014 |
20150093301 | PROCESS FOR THE PRODUCTION OF HEXAMETHLENEDIAMINE - It is described a process for the production of hexamethylenediamine by hydrogenation of adiponitrile, comprising an improved step of regeneration of the catalyst. Also described are an equipment for the production of hexamethylenediamine, and a washing apparatus ( | 04-02-2015 |
Daniel Yero Corona, Ciudad De La Habana CU
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20090208521 | PHARMACEUTICAL COMPOSITIONS CONTAINING PROTEIN NMA0939 - The present invention is related to field of medicine, particularly to the development of pharmaceutical formulations containing NMA0939 protein. Formulations described in this invention are able to confer protection against different diseases caused or not by pathogenic agents. NMA0939 protein was identified as a | 08-20-2009 |
Donato Corona, Augusta IT
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20150325654 | INTEGRATED ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THEREOF - An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels. | 11-12-2015 |
Donato Corona, Catania IT
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20130026536 | INSULATED GATE SEMICONDUCTOR DEVICE WITH OPTIMIZED BREAKDOWN VOLTAGE, AND MANUFACTURING METHOD THEREOF - An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region, which extends in the body region and has the first type of conductivity; and a buried region having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction orthogonal to the front side and to the back side. | 01-31-2013 |
Francisco Corona, Queretaro MX
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20120134831 | LUBRICATION SYSTEM AND WIND TURBINE INCORPORATING SAME - A lubrication system and wind turbine are provided having one or more input ports in a component and one or more output ports in the component. An expandable lubrication receptacle is connected to the one or more output ports, and the expandable lubrication receptacle is configured for receiving a lubrication medium from the component. | 05-31-2012 |
Jérôme Corona, Bron FR
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20130187640 | MULTIPOLAR ENCODER FOR POSITION SENSORS, AND DETECTION DEVICE INCLUDING SUCH AN ENCODER COMBINED WITH AT LEAST ONE POSITION SENSOR - A position sensor coder of the type comprising a multipolar magnetic annulus ( | 07-25-2013 |
Jérôme Corona, Bron FR
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20130187640 | MULTIPOLAR ENCODER FOR POSITION SENSORS, AND DETECTION DEVICE INCLUDING SUCH AN ENCODER COMBINED WITH AT LEAST ONE POSITION SENSOR - A position sensor coder of the type comprising a multipolar magnetic annulus ( | 07-25-2013 |
Pietro Corona, Milano IT
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20080224242 | PROCESS FOR MANUFACTURING A MEMBRANE OF SEMICONDUCTOR MATERIAL INTEGRATED IN, AND ELECTRICALLY INSULATED FROM, A SUBSTRATE - A process for manufacturing an integrated membrane made of semiconductor material includes the step of forming, in a monolithic body of semiconductor material having a front face, a buried cavity, extending at a distance from the front face and delimiting with the front face a surface region of the monolithic body, the surface region forming a membrane that is suspended above the buried cavity. The process further envisages the step of forming an insulation structure in a surface portion of the monolithic body to electrically insulate the membrane from the monolithic body; and the further and distinct step of setting the insulation structure at a distance from the membrane so that it will be positioned outside the membrane at a non-zero distance of separation. | 09-18-2008 |
20080261345 | METHOD FOR MANUFACTURING A SEMICONDUCTOR PRESSURE SENSOR - Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals. | 10-23-2008 |
20100269595 | INTEGRATED DIFFERENTIAL PRESSURE SENSOR - An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body. | 10-28-2010 |
20100330721 | METHOD FOR FORMING BURIED CAVITIES WITHIN A SEMICONDUCTOR BODY, AND SEMICONDUCTOR BODY THUS MADE - A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches. | 12-30-2010 |
20110031567 | PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY - A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity. | 02-10-2011 |
20110133186 | PROCESS FOR MANUFACTURING A SEMICONDUCTOR WAFER HAVING SOI-INSULATED WELLS AND SEMICONDUCTOR WAFER THEREBY MANUFACTURED - A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region. | 06-09-2011 |
20120223402 | CAPACITIVE SEMICONDUCTOR PRESSURE SENSOR - A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region. | 09-06-2012 |
Pietro Corona, Roma IT
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20100237459 | PROCESS FOR MANUFACTURING A WAFER BY ANNEALING OF BURIED CHANNELS - A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures. | 09-23-2010 |
20130200484 | PROCESS FOR MANUFACTURING A WAFER BY ANNEALING OF BURIED CHANNELS - A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures. | 08-08-2013 |
Pietro Corona, Milan IT
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20120237061 | PROCESS FOR MANUFACTURING A MEMBRANE MICROELECTROMECHANICAL DEVICE, AND MEMBRANE MICROELECTROMECHANICAL DEVICE - Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration. | 09-20-2012 |
Stefano Corona, Borgarello IT
Tomas Navas Corona, Sur Bucaramanga CO
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20090064027 | EXECUTION AND VISUALIZATION METHOD FOR A COMPUTER PROGRAM OF A VIRTUAL BOOK - The application provides a method to catalogue and visualize books in a familiar manner for the user, since its graphic interface enables reading of the virtual book in a manner as similar as possible to that of a physical book. The contents of the books may be displayed literally or with commentary such as general comments, historic notes, illustrations, music and even other books. It also includes tools such as dictionaries in multiple languages and search tools in order to provide access to library materials. | 03-05-2009 |
Vincenzo Corona, Asti IT
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20130163910 | METHOD OF MOUNTING A SHAFT IN A BEARING CARRIER AND BEARING CARRIER - A bearing carrier for a shaft of an electric motor has a carrier member supporting two bearings supporting the shaft. The carrier member has a single bearing seat accommodating the two bearings to ensure the two bearings are coaxially mounted. A spacing member axially separates the two bearings. The spacing member has a central passage through which the shaft extends with radial play, as well as two end surfaces parallel with each other, orthogonal to the axis of the passage and axially separated by a distance which corresponds to the desired mounting distance between the bearings. During assembly, the bearings and spacing member are mounted on the shaft to form a preassembled group. The preassembled group is pressed into the bearing seat of the carrier member, with one bearing being pressed against a stop formed at one end of the bearing seat. | 06-27-2013 |