Patent application number | Description | Published |
20130329483 | FILAMENTARY MEMORY DEVICES AND METHODS - Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described. | 12-12-2013 |
20140061568 | RESISTIVE MEMORY DEVICES - Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed. | 03-06-2014 |
20140106534 | Methods Of Forming A Programmable Region That Comprises A Multivalent Metal Oxide Portion And An Oxygen Containing Dielectric Portion - A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material. | 04-17-2014 |
20140339491 | FILAMENTARY MEMORY DEVICES AND METHODS - Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described. | 11-20-2014 |
20160064655 | SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS - A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material. | 03-03-2016 |
20160086664 | RESISTIVE MEMORY DEVICES - Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed. | 03-24-2016 |
Patent application number | Description | Published |
20090158102 | Methods, devices, and systems for experiencing reduced unequal testing degradation - One or more embodiments of the present invention reduce uneven degradation during testing by providing for a toggling signal to be applied to remaining input paths which do not receive test signals. Therefore, rather than being held in a fixed state during the burn-in process, the remaining inputs are toggled as well. Consequently, they degrade at a more similar rate as their counterpart inputs that did receive test signals. | 06-18-2009 |
20100061165 | Circuitry and Methods for Improving Differential Signals That Cross Power Domains - Disclosed herein are circuitry and methods for improving differential signals that cross power domains. In an example embodiment, the power supply domain boundary along the output paths that generate the differential signal is staggered, such that the boundary occurs at an odd numbered stage in one differential output path and at an even numbered stage in the other differential output. Defining the power supply domain boundary in this manner can help ensure that the same logical state is present at the boundary in either of the differential output paths. This same logic signal should affect subsequent stages similarly from a speed perspective, and so should similarly affect the differential signals generated by each of the output paths. This means, among other things, that the differential signal as generated should tend to cross nearer to a midpoint voltage, which increases its compliance with certain integrated circuit specifications such as the Vox specification used for the differential data strobe in an SDRAM. | 03-11-2010 |
20110148474 | Circuitry and Methods for Improving Differential Signals That Cross Power Domains - Disclosed herein are circuitry and methods for improving differential signals that cross power domains. In an example embodiment, the power supply domain boundary along the output paths that generate the differential signal is staggered, such that the boundary occurs at an odd numbered stage in one differential output path and at an even numbered stage in the other differential output. Defining the power supply domain boundary in this manner can help ensure that the same logical state is present at the boundary in either of the differential output paths. This same logic signal should affect subsequent stages similarly from a speed perspective, and so should similarly affect the differential signals generated by each of the output paths. This means, among other things, that the differential signal as generated should tend to cross nearer to a midpoint voltage, which increases its compliance with certain integrated circuit specifications such as the Vox specification used for the differential data strobe in an SDRAM. | 06-23-2011 |
Patent application number | Description | Published |
20090321480 | Retention holster having an extended pivot guard - A holster for a handgun having a holster body defining a cavity for receiving and holding a handgun, a pivot guard pivotably coupled to the body and pivotable between a closed position for securing a handgun within the cavity and an open position for insertion or removal of the handgun, wherein the pivot guard includes a pivot guard locking means for receiving at least a portion of a pivot guard locking portion for securing the pivot guard in the closed position, and wherein the pivot guard includes a locking extension that extends from each side of the pivot guard and the holster body includes a corresponding retaining channels formed within the cavity such that when the pivot guard is in the closed position, each locking extension of the pivot guard extends into a corresponding retaining channel of the holster body. | 12-31-2009 |
20100286724 | TOURNIQUET SYSTEM - A tourniquet system including a band, an optional bar, and an anti-pinch plate. The bar comprises an elongate portion of material having a first end portion, an intermediate portion, and a second end portion, at least one aperture formed in the bar so as to accept the band and allow the band to pass therethrough, at least one locking protrusion that extends from at least one of the first end portion or the second end portion. The anti-pinch plate includes one or more band receiving apertures formed so as to accept the band and allow the band to pass therethrough, wherein the anti-pinch plate includes one or more locking notches formed substantially along an edge portion of the anti-pinch plate, wherein the locking notches provide a means for securing at least a portion of the bar to the anti-pinch plate. | 11-11-2010 |