Conraux
Jérôme Conraux, Trets FR
Patent application number | Description | Published |
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20100019885 | DETECTION OF THE PRESENCE OF A CONTACTLESS COMMUNICATION ELEMENT WITHIN THE RANGE OF A TERMINAL - A method of detection of the presence of a contactless communication element by a terminal emitting an electromagnetic field, in which an oscillating circuit of the terminal is excited at a frequency which is made variable between two values surrounding a nominal tuning frequency of the oscillating circuit; a signal representative of the load of the oscillating circuit being interpreted to detect that a reference voltage has not been exceeded, which indicates the presence of an element in the field. A presence-detection circuit and a corresponding terminal. | 01-28-2010 |
Yann Conraux, Grenoble FR
Patent application number | Description | Published |
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20130208523 | High Speed Magnetic Random Access Memory-based Ternary CAM - The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell. | 08-15-2013 |
Yann Conraux, Sassenage FR
Patent application number | Description | Published |
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20150287764 | SELF-REFERENCED MRAM ELEMENT AND DEVICE HAVING IMPROVED MAGNETIC FIELD - Self-reference-based MRAM element including: first and second magnetic tunnel junctions, each having a magnetoresistance that can be varied; and a field line for passing a field current to vary the magnetoresistance of the first and second magnetic tunnel junctions. The field line includes a first branch and a second branch each branch including cladding. The first branch is arranged for passing a first portion of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction, and the second branch is electrically connected in parallel with the first branch and arranged for passing a second portion of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction. The self-referenced MRAM element and an MRAM device including corresponding MRAM elements can use a reduced field current. | 10-08-2015 |