Patent application number | Description | Published |
20130205897 | INERTIAL MICRO-SENSOR OF ANGULAR DISPLACEMENTS - The present invention relates to an inertial micro-sensor of angular displacements comprising at least one inertial mass ( | 08-15-2013 |
20130230967 | MANUFACTURING PROCESS FOR A STACKED STRUCTURE COMPRISING A THIN LAYER BONDING TO A TARGET SUBSTRATE - A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, in which a thin layer is formed by introduction gaseous species into an initial substrate, to form a weakened layer separating a film from the rest of the initial substrate, a first contact face of the thin layer is bonded to a face of an intermediate substrate by molecular adhesion, and the initial substrate is fractured at the weakened layer so as to expose a free face of the thin layer. The intermediate substrate is then removed in order to obtain the stacked structure. | 09-05-2013 |
20130236059 | FLUORESCENCE REFLECTION IMAGING DEVICE WITH TWO WAVELENGTHS - A first light source has a first wavelength corresponding to an excitation wavelength of a fluorophore. The excitation wavelength and an emission wavelength of the fluorophore delineate a predetermined interval. A second light source has a second wavelength offset with respect to the first wavelength so as to be outside said predetermined interval. The offset between the first and second wavelengths is comprised between 30 nm and 100 nm. A camera comprises a filter opaque to the first and second wavelengths and transparent to the emission wavelength and to wavelengths substantially higher than the higher of the first and second wavelengths. The light sources and camera are synchronized to alternately activate one of the light sources and make the camera alternately acquire a fluorescence image and a background noise image. | 09-12-2013 |
20130249648 | HBAR Resonator Comprising A Structure For Amplifying The Amplitude Of At Least One Resonance Of Said Resonator And Methods For Producing Such A Resonator - An HBAR resonator comprises, on a substrate, a piezoelectric transducer, said transducer comprising at least one piezoelectric layer, at least two series of electrodes and exhibiting resonance frequencies Fi corresponding to wavelengths λi, characterized in that it comprises an amplification structure comprising at least one resonant cavity arranged on the substrate between said transducer and said substrate or in said substrate, this amplification structure being suitable for mechanically resonating at least one of the resonance frequencies Fi of said transducer corresponding to said wavelength λi, so as to amplify the amplitude of the electrical resonance generated at said frequency. | 09-26-2013 |
20130259181 | Device for Generating a High Temperature Gradient in a Nuclear Fuel Sample - An assembly comprising a sample and a device for generating a high temperature gradient in said sample, comprises: a chamber inside which said sample is placed; a resistor passing through said sample; first induction means at the periphery of the chamber to create an electromagnetic field; second induction means connected to said resistor and capable of picking up said electromagnetic field so as to create an induced current circulating in said resistor. | 10-03-2013 |
20130280833 | Reactor for Atomic Layer Deposition (ALD), Application to Encapsulation of an OLED Device by Deposition of a Transparent Al2O3 Film - The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen. | 10-24-2013 |
20130295734 | METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSISTOR - A method for forming gate, source, and drain contacts on a MOS transistor having an insulated gate including polysilicon covered with a metal gate silicide, this gate being surrounded with at least one spacer made of a first insulating material, the method including the steps of a) covering the structure with a second insulating material and leveling the second insulating material to reach the gate silicide; b) oxidizing the gate so that the gate silicide buries and covers the a silicon oxide; c) selectively removing the second insulating material; and d) covering the structure with a first conductive material and leveling the first conductive material all the way to a lower level at the top of the spacer. | 11-07-2013 |
20140312461 | DEFECTIVE P-N JUNCTION FOR BACKGATED FULLY DEPLETED SILICON ON INSULATOR MOSFET - Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased. | 10-23-2014 |