Patent application number | Description | Published |
20140169853 | KEYBOARD FOR AN ELECTRONIC DEVICE - Particular embodiments described herein provide for a keyboard assembly having a plurality of keys that include a key having one or more magnets, which are provided at a substantially outer portion of the key. The keyboard assembly can also include a top plate that comprises a ferrous material to attract the one or more magnets to the top plate. | 06-19-2014 |
20140198441 | MOBILE COMPUTING DEVICE, APPARATUS AND SYSTEM - Embodiments of an apparatus, system and method are described for a mobile computing device. A mobile computing device may comprise, for example, an enclosure arranged to support a display and one or more processor circuits, the enclosure having an enlarged portion at one side of the enclosure arranged to allow a user to clutch the enclosure with one hand at the one side, the enlarged portion having a thickness that is larger than a thickness of another portion of the enclosure, and the enlarged portion defining a cavity arranged to support one or more energy storage modules. Other embodiments are described and claimed. | 07-17-2014 |
20140247548 | HYBRID COMPUTING DEVICE, APPARATUS AND SYSTEM - Embodiments of an apparatus and system are described for a hybrid computing device. Some embodiments may comprise a computing device having an enclosure arranged to support a display on a front of the enclosure and a cover mechanically coupled to a side of the enclosure, the cover comprising a first portion having at least one integrated input device and a second portion having at least one flexible seam arranged to allow the second portion to adjustably pivot around the seam. Other embodiments are described and claimed. | 09-04-2014 |
20140273590 | CONNECTOR ASSEMBLY FOR AN ELECTRONIC DEVICE - Particular examples described herein provide for an electronic device, such as a notebook computer or laptop, which includes a circuit board coupled to a plurality of electronic components (which includes any type of hardware, elements, circuitry, etc.). The electronic device may also include a connector assembly that is positioned within at least a portion of a recess of the electronic device, where the connector assembly includes: a first assembly that is to receive a connector; and a second assembly that is to receive an identification module that is to provide an association between a user and the electronic device. | 09-18-2014 |
20140285960 | HINGE CONFIGURATION FOR AN ELECTRONIC DEVICE - Particular embodiments described herein provide for an electronic device, such as a notebook computer or laptop, that includes a circuit board coupled to a plurality of electronic components (which includes any type of components, elements, circuitry, etc.). The electronic device may also include a hinge assembly to secure a top portion of the electronic device to an accessory. The hinge assembly is to allow a rotation of the top portion in relation to the accessory. The hinge assembly may include a plurality of discs to receive a plurality of segments of the accessory as the hinge assembly engages to secure the top portion of the electronic device to the accessory. | 09-25-2014 |
20150146356 | MOBILE COMPUTING DEVICE, APPARATUS AND SYSTEM - Embodiments of an apparatus, system and method are described for a mobile computing device. A mobile computing device may comprise, for example, an enclosure arranged to support a display and one or more processor circuits, the enclosure having an enlarged portion at one side of the enclosure arranged to allow a user to clutch the enclosure with one hand at the one side, the enlarged portion having a thickness that is larger than a thickness of another portion of the enclosure, and the enlarged portion defining a cavity arranged to support one or more energy storage modules. Other embodiments are described and claimed. | 05-28-2015 |
20150193009 | FOLDABLE CONFIGURATIONS FOR A THUMB TYPING KEYBOARD - Particular embodiments described herein provide for an electronic device that could include a circuit board coupled to a plurality of electronic components (which includes any type of components, elements, circuitry, etc.). One particular example implementation of the electronic device may include a first portion that contains a first display; a second portion that further comprises a keyboard and a fold away area; and a hinge, where the hinge couples the first portion and the second portion, and where the fold away area can rotate with respect to the hinge. In certain cases, the fold away area can rotate with respect to the hinge to expose the keyboard for thumb typing. | 07-09-2015 |
20150277490 | ELECTRONIC DEVICE - In one example a chassis for an electronic device comprises a first housing and a second housing, the second housing coupled to the first housing such that the second housing is rotatable about an axis that extends diagonally through the first housing and the second housing. Other examples may be described. | 10-01-2015 |
20160056592 | CONNECTOR ASSEMBLY FOR AN ELECTRONIC DEVICE - Particular examples described herein provide for an electronic device, such as a notebook computer or laptop, which includes a circuit board coupled to a plurality of electronic components (which includes any type of hardware, elements, circuitry, etc.). The electronic device may also include a connector assembly that is positioned within at least a portion of a recess of the electronic device, where the connector assembly includes: a first assembly that is to receive a connector; and a second assembly that is to receive an identification module that is to provide an association between a user and the electronic device. | 02-25-2016 |
20160091935 | HINGE CONFIGURATION FOR AN ELECTRONIC DEVICE - Particular embodiments described herein provide for an electronic device, such as a notebook computer or laptop, that includes a circuit board coupled to a plurality of electronic components (which includes any type of components, elements, circuitry, etc.). The electronic device may also include a hinge assembly to secure a top portion of the electronic device to an accessory. The hinge assembly is to allow a rotation of the top portion in relation to the accessory. The hinge assembly may include a plurality of discs to receive a plurality of segments of the accessory as the hinge assembly engages to secure the top portion of the electronic device to the accessory. | 03-31-2016 |
Patent application number | Description | Published |
20150066228 | Building Management and Appliance Control System - The building management and appliance control system of the present invention includes an appliance control unit capable of monitoring and regulating the energy use of connected appliances based on information gathered from an energy cloud. The energy cloud is a network of remote server clients hosted on the Internet used to store, manage, and process energy data which are in communication with utility providers and third party systems. The appliance control unit includes a control system which communicates between and controls the overall function of the modules within the unit such as the user interface input, communication interface, power control unit, and battery unit. The appliance control unit uses all of the information available from the energy cloud to determine the optimum time to operate the attached appliances and when and how fast to charge the battery unit to ensure adequate power for the appliances at all times. | 03-05-2015 |
20150066231 | Building Management and Appliance Control System - The present disclosure is directed to energy storage and supply management system. The system may include one or more of a control unit, which is in communication with the power grid, and an energy storage unit that stores power for use at a later time. The system may be used with traditional utility provided power as well as locally generated solar, wind, and any other types of power generation technology. In some embodiments, the energy storage unit and the control unit are housed in the same chassis. In other embodiments, the energy storage unit and the control unit are separate. In another embodiment, the energy storage unit is integrated into the chassis of an appliance itself. | 03-05-2015 |
20150316285 | WIRELESS WALL THERMOSTAT - The wireless wall thermostat of the present invention utilizes a push-contact mechanical system that allows a user to raise or lower the temperature within a space by applying a force on the top or bottom center of the front of the thermostat. The perpendicular force applied by the user generates a moment arm around pivot connectors, which rotates the thermostat clockwise or counter-clockwise. When rotated clockwise or counter-clockwise, contact buttons attached to the back of the thermostat come into contact with the trigger tabs of a stationary trigger plate mounted to a wall through use of an electromagnetic attraction between a steel disc and a magnet. When the trigger tabs press the contact buttons, the contact buttons send a signal to the central processing unit of the thermostat's internal circuit board to modulate the temperature setting. In addition, the wireless wall thermostat can be detachable by utilizing a magnetic release smart mount. | 11-05-2015 |
Patent application number | Description | Published |
20080213962 | STRAINED SILICON WITH ELASTIC EDGE RELAXATION - A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer, with the SiGe layer having a thickness less than its critical thicknesses. Shallow trenches are subsequently fabricated through the epitaxial layers, so that the strain energy is redistributed such that the compressive strain in the SiGe layer is partially relaxed elastically and a degree of tensile strain is induced to the neighboring layers of silicon. Because this process for inducing tensile strain in a silicon over-layer is elastic in nature, the desired strain may be achieved without formation of misfit dislocations. | 09-04-2008 |
20100065887 | FIELD EFFECT TRANSISTOR SOURCE OR DRAIN WITH A MULTI-FACET SURFACE - FET configurations in which two (or more) facets are exposed on a surface of a semiconductor channel, the facets being angled with respect to the direction of the channel, allow for conformal deposition of a convex or concave S/D. A convex tip of the S/D enhances electric fields at the interface, reducing the resistance between the S/D and the channel. In contrast, a S/D having a concave tip yields a dual-gate FET that emphasizes reduced short-channel effects rather than electric field enhancement. The use of self-limiting, selective wet etches to expose the facets facilitates process control, control of interface chemistry, and manufacturability. | 03-18-2010 |
20100229929 | Strained-Enhanced Silicon Photon-To-Electron Conversion Devices - Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins. | 09-16-2010 |
20110008953 | METHOD FOR MAKING SEMICONDUCTOR INSULATED-GATE FIELD-EFFECT TRANSISTOR HAVING MULTILAYER DEPOSITED METAL SOURCE(S) AND/OR DRAIN(S) - A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal. | 01-13-2011 |
20110092047 | Strained Semiconductor Using Elastic Edge Relaxation, a Buried Stressor Layer and a Sacrificial Stressor Layer - The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial stressor layer formed above the active semiconductor layer. As an example, the substrate may be silicon, the buried stressor layer may be silicon germanium, the active semiconductor layer may be silicon and the sacrificial stressor layer may be silicon germanium. Elastic edge relaxation is preferably used to efficiently transfer strain to the active layer. | 04-21-2011 |
20110230026 | Biaxial Strained Field Effect Transistor Devices - A process for forming contacts to a field effect transistor provides edge relaxation of a buried stressor layer, inducing strain in an initially relaxed surface semiconductor layer above the buried stressor layer. A process can start with a silicon or silicon-on-insulator substrate with a buried silicon germanium layer having an appropriate thickness and germanium concentration. Other stressor materials can be used. Trenches are etched through a pre-metal dielectric to the contacts of the FET. Etching extends further into the substrate, through the surface silicon layer, through the silicon germanium layer and into the substrate below the silicon germanium layer. The further etch is performed to a depth to allow for sufficient edge relaxation to induce a desired level of longitudinal strain to the surface layer of the FET. Subsequent processing forms contacts extending through the pre-metal dielectric and at least partially into the trenches within the substrate. | 09-22-2011 |
20110269281 | Transistor with Longitudinal Strain in Channel Induced by Buried Stressor Relaxed by Implantation - Processes for making field effect transistors relax a buried stressor layer to induce strain in a silicon surface layer above the buried stressor layer. The buried stressor layer is relaxed and the surface layer is strained by implantation into at least the buried stressor layer, preferably on both sides of a portion of the surface layer that is to be stressed. For example, implanting ions through the surface silicon layer on either side of the gate structure of the preferred FET implementation into an underlying stressor layer can induce strain in a channel region of the FET. This process can begin with a silicon or silicon-on-insulator substrate with a buried silicon germanium layer having an appropriate thickness and germanium concentration. Other stressor materials can be used. | 11-03-2011 |
20140170826 | BIAXIAL STRAINED FIELD EFFECT TRANSISTOR DEVICES - A process for forming contacts to a field effect transistor provides edge relaxation of a buried stressor layer, inducing strain in an initially relaxed surface semiconductor layer above the buried stressor layer. A process can start with a silicon or silicon-on-insulator substrate with a buried silicon germanium layer having an appropriate thickness and germanium concentration. Other stressor materials can be used. Trenches are etched through a pre-metal dielectric to the contacts of the FET. Etching extends further into the substrate, through the surface silicon layer, through the silicon germanium layer and into the substrate below the silicon germanium layer. The further etch is performed to a depth to allow for sufficient edge relaxation to induce a desired level of longitudinal strain to the surface layer of the FET. Subsequent processing forms contacts extending through the pre-metal dielectric and at least partially into the trenches within the substrate. | 06-19-2014 |
Patent application number | Description | Published |
20130039664 | TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM - Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. | 02-14-2013 |
20130284269 | STRAIN-ENHANCED SILICON PHOTON-TO-ELECTRON CONVERSION DEVICES - Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins. | 10-31-2013 |
20140199813 | TRANSISTOR WITH LONGITUDINAL STRAIN IN CHANNEL INDUCED BY BURIED STRESSOR RELAXED BY IMPLANTATION - Processes for making field effect transistors relax a buried stressor layer to induce strain in a silicon surface layer above the buried stressor layer. The buried stressor layer is relaxed and the surface layer is strained by implantation into at least the buried stressor layer, preferably on both sides of a portion of the surface layer that is to be stressed. For example, implanting ions through the surface silicon layer on either side of the gate structure of the preferred FET implementation into an underlying stressor layer can induce strain in a channel region of the FET. This process can begin with a silicon or silicon-on-insulator substrate with a buried silicon germanium layer having an appropriate thickness and germanium concentration. Other stressor materials can be used. | 07-17-2014 |
20140369372 | Tensile Strained Semiconductor Photon Emission and Detection Devices and Integrated Photonics System - Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. | 12-18-2014 |
20150249320 | Tensile Strained Semiconductor Photon Emission and Detection Devices and Integrated Photonics System - Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser. | 09-03-2015 |