Patent application number | Description | Published |
20100115803 | Ground engaging digging tooth - A one-piece digging tooth having a socket opening to a rear end of the tooth for receiving and accommodating at least a lengthwise portion of a nose portion of an adapter extending forward from earth working equipment. The digging tooth has a top surface and a bottom surface which angularly diverge from each other between a forward end and the rear end of the tooth and two side surfaces. The tooth further includes a longitudinally elongated and centrally disposed tine with another longitudinally elongated tine outwardly cantilevered from and disposed to opposite lateral sides of and extending generally parallel to the central tine. To enhance their penetration capability, a width and thickness of all the tines constantly diminishes as the tines longitudinally extend toward the forward edge of the tooth. Opposed side surfaces on each tine are separated from each other by a longitudinally cleft whereby providing the digging tooth with at least two channels for directing materials, worked free by the tines, rearwardly toward and into the earth working equipment. | 05-13-2010 |
20110030248 | Tooth assembly and related method for releasably coupling a tooth to an adapter - A tooth assembly including an adapter and a tooth. The adapter has a nose portion with a first predetermined configuration. The tooth is assembled onto the adapter nose portion by relative longitudinal movement. The tooth defines a blind cavity having a second predetermined configuration and opening to a rear of the tooth. The second predetermined configuration defined by the tooth cavity is greater than the first predetermined configuration defined by the adapter nose portion such that a space is provided between the adapter nose portion and the blind cavity when the adapter and tooth are arranged in operable combination relative to each other. A securement member releasably maintains the tooth and the adapter nose portion in operable combination relative to each other. The securement member fills the space defined between the tooth cavity and the adapter nose portion to resist longitudinal movement between the tooth and the adapter nose portion. A related method for releasably coupling a tooth to an adapter is also disclosed. | 02-10-2011 |
20110191999 | Pin tool assembly for acting on a retaining pin for a tooth of a ground engaging implement - A pin tool assembly for forcibly removing a first type of retaining pin from digging teeth arranged in side-by-side relation across a forward edge of a digging implement. The pin tool assembly includes a tool defining a blind recess laterally disposed to one side of the tool. The tool assembly further includes an elongated extractor pin having an enlarged head portion and a shank portion extending from the head portion. Cooperating instrumentalities maintain and position the extractor pin relative the tool such that, when a force is applied to the tool, the free end of the shank portion of the pin engages with and forcibly extracts the retaining pin from the digging tooth. Preferably, the tool further defines a plurality of openings for snugly accommodating a series of retaining pins therein | 08-11-2011 |
20140182174 | MULTIPIECE WEAR ASSEMBLY - A multipiece wear assembly including an adapter and a wear part. The adapter has a nose portion with a first predetermined configuration. The wear part is assembled onto the adapter nose portion by relative longitudinal movement and defines a blind cavity opening to a rear thereof. The blind cavity of the wear part has a second predetermined configuration. In one form, the second predetermined configuration defined by the blind cavity is greater than the first predetermined configuration defined by the adapter nose portion such that a relief is provided between the adapter nose portion and the blind cavity when the adapter and wear part are arranged in operable combination relative to each other. Lock structure is provided on one of the adapter nose portion and wear part for maintaining the wear part and adapter nose portion in operable combination. In one form, a modular securement member extends generally perpendicular to a longitudinal axis of the tooth assembly with a portion of the securement member filling the relief defined between confronting surfaces on the blind cavity and the adapter nose portion. | 07-03-2014 |
Patent application number | Description | Published |
20120070981 | ATOMIC LAYER DEPOSITION OF A COPPER-CONTAINING SEED LAYER - The present disclosure relates to the field of microelectronic device fabrication and, more particularly, to the formation of copper-containing seed layers for the fabrication of interconnects in integrated circuits. The copper-containing seed layers may be formed in an atomic layer deposition process with a copper pre-cursor and organometallic co-reagent. | 03-22-2012 |
20130270513 | ELECTROPOSITIVE METAL CONTAINING LAYERS FOR SEMICONDUCTOR APPLICATIONS - Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the layers are thin or ultrathin (films that are less than 100 {acute over (Å)} thick) and or conformal films. Additionally provided are transistor devices, metal interconnects, and computing devices comprising metal layers comprising one or more electropositive metals. | 10-17-2013 |
20130273261 | METHOD OF INCREASING AN ENERGY DENSITY AND AN ACHIEVABLE POWER OUTPUT OF AN ENERGY STORAGE DEVICE - Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure. | 10-17-2013 |
20140034906 | CARBON NANOTUBE SEMICONDUCTOR DEVICES AND DETERMINISTIC NANOFABRICATION METHODS - Embodiments of the invention provide transistor structures and interconnect structures that employ carbon nanotubes (CNTs). Further embodiments of the invention provide methods of fabricating transistor structures and interconnect structures that employ carbon nanotubes. Deterministic nanofabrication techniques according to embodiments of the invention can provide efficient routes for the large-scale manufacture of transistor and interconnect structures for use, for example, in random logic and memory circuit applications. | 02-06-2014 |
20140084387 | NON-PLANAR III-V FIELD EFFECT TRANSISTORS WITH CONFORMAL METAL GATE ELECTRODE & NITROGEN DOPING OF GATE DIELECTRIC INTERFACE - A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface. | 03-27-2014 |
20140117559 | PROCESS AND MATERIAL FOR PREVENTING DELETERIOUS EXPANSION OF HIGH ASPECT RATIO COPPER FILLED THROUGH SILICON VIAS (TSVS) - Techniques are disclosed for forming through-silicon vias (TSVs) implementing a negative thermal expansion (NTE) material such as zirconium tungstate (ZrW | 05-01-2014 |
20140185260 | NANOSTRUCTURED ELECTROLYTIC ENERGY STORAGE DEVICES - In one embodiment, a structure for an energy storage device may include a first nanostructured substrate having a conductive layer and a dielectric layer formed on the conductive layer. A second nanostructured substrate includes another conductive layer. A separator separates the first and second nanostructured substrates and allows ions of an electrolyte to pass through the separator. The structure may be a nanostructured electrolytic capacitor with the first nanostructured substrate forming a positive electrode and the second nanostructured substrate forming a negative electrode of the capacitor. | 07-03-2014 |
20140335918 | ENERGY STORAGE DEVICE, METHOD OF MANUFACTURING SAME, AND MOBILE ELECTRONIC DEVICE CONTAINING SAME - An energy storage device comprises a first porous semiconducting structure ( | 11-13-2014 |
20150072498 | NON-PLANAR III-V FIELD EFFECT TRANSISTORS WITH CONFORMAL METAL GATE ELECTRODE & NITROGEN DOPING OF GATE DIELECTRIC INTERFACE - A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface. | 03-12-2015 |
20150093890 | COBALT METAL PRECURSORS - A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co | 04-02-2015 |
20150176119 | ADDITIVES TO IMPROVE THE PERFORMANCE OF A PRECURSOR SOURCE FOR COBALT DEPOSITION - Methods of forming cobalt films utilizing a cobalt precursor comprising an additive are described. Those methods may include adding an additive to a cobalt precursor, wherein the cobalt precursor is located in an ampoule that is coupled with a deposition tool, and then forming a cobalt film using the cobalt precursor comprising the additive. Non-volatile decomposition products of the cobalt precursor are solubilized in the ampoule. | 06-25-2015 |
20150179798 | CONFORMAL THIN FILM DEPOSITION OF ELECTROPOSITIVE METAL ALLOY FILMS - The present disclosure relates to a method of forming a semiconductor. The method includes heating a substrate in a reaction chamber, supplying to the reaction chamber a first constituent including a metal borohydride wherein the metal borohydride includes at least one of: an alkaline earth metal, a transition metal, or a combination thereof; supplying to the reaction chamber a main-group hydride constituent; and depositing a metal compound on the substrate, wherein the metal compound comprises a) at least one of an alkaline earth metal a transition metal or a combination thereof, b) boron and c) optionally the main group alloying element. | 06-25-2015 |
20150243508 | ELECTROPOSITIVE METAL CONTAINING LAYERS FOR SEMICONDUCTOR APPLICATIONS - Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the layers are thin or ultrathin (films that are less than 100 Å thick) and or conformal films. Additionally provided are transistor devices, metal interconnects, and computing devices comprising metal layers comprising one or more electropositive metals. | 08-27-2015 |