Patent application number | Description | Published |
20130221363 | Integrated Schottky Diode for HEMTs - An embodiment of a transistor device includes a compound semiconductor material on a semiconductor carrier and a source region and a drain region spaced apart from each other in the compound semiconductor material with a channel region interposed between the source and drain regions. A Schottky diode is integrated with the semiconductor carrier, and contacts extend from the source and drain regions through the compound semiconductor material. The contacts are in electrical contact with the Schottky diode so that the Schottky diode is connected in parallel between the source and drain regions. In another embodiment, the integrated Schottky diode is formed by a region of doped amorphous silicon or doped polycrystalline silicon disposed in a trench structure on the drain side of the device. | 08-29-2013 |
20130299842 | Contact Structures for Compound Semiconductor Devices - A semiconductor device includes a semiconductor body including a plurality of compound semiconductor layers and a two-dimensional charge carrier gas channel region formed in one of the compound semiconductor layers. The semiconductor device further includes a contact structure disposed in the semiconductor body. The contact structure includes a metal region and a doped region. The metal region extends into the semiconductor body from a first side of the semiconductor body to at least the compound semiconductor layer which includes the channel region. The doped region is formed in the semiconductor body between the metal region and the channel region so that the channel region is electrically connected to the metal region through the doped region. | 11-14-2013 |
20130334573 | Multi-Channel HEMT - A transistor device includes a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure. The 2DEGs form current channels of the transistor device. The transistor device further includes a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, and a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels. The transistor device also includes a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material. | 12-19-2013 |
20140042448 | High Breakdown Voltage III-Nitride Device - A semiconductor device includes a semiconductor body having a compound semiconductor material on a substrate. The compound semiconductor material has a channel region. A source region extends to the compound semiconductor material. A drain region also extends to the compound semiconductor material and is spaced apart from the source region by the channel region. An insulating region is buried in the semiconductor body between the compound semiconductor material and the substrate in an active region of the semiconductor device. The active region includes the source, the drain and the channel region of the device. The insulating region is discontinuous over a length of the channel region between the source region and the drain region. | 02-13-2014 |
20140367700 | High-Voltage Cascaded Diode with HEMT and Monolithically Integrated Semiconductor Diode - An embodiment of a cascaded diode having a breakdown voltage exceeding 300V includes an HEMT and a Si Schottky diode. The HEMT includes a gate, a drain, a source, and a two-dimensional electron gas channel region connecting the source and the drain and controlled by the gate. The HEMT has a breakdown voltage exceeding 300V. The Si Schottky diode is monolithically integrated with the HEMT. The Si Schottky diode includes a cathode connected to the source of the HEMT and an anode connected to the gate of the HEMT. The Si Schottky diode has a breakdown voltage less than 300V and a forward voltage less than or equal to 0.4V. The anode of the Si Schottky diode forms the anode of the cascaded diode and the drain of the HEMT forms the cathode of the cascaded diode. | 12-18-2014 |
20150115326 | Electronic Device - In an embodiment, an electronic device includes a semiconductor layer having a surface, a gate and a first current electrode on the surface and a dielectric layer extending between the gate and the first current electrode and including charged ions having a predetermined charge profile. | 04-30-2015 |
20150221748 | METHOD OF MANUFACTURING A MULTI-CHANNEL HEMT - A method of manufacturing a transistor device includes forming a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure, the 2DEGs forming current channels of the transistor device, forming a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, forming a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels, and forming a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material. | 08-06-2015 |
20150249134 | Group III-Nitride-Based Enhancement Mode Transistor - A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure is covered by a p-type Group III-nitride layer. | 09-03-2015 |