Patent application number | Description | Published |
20090139873 | Leveler compounds - Plating baths containing a mixture of leveling agents, where the mixture includes a first level agent having a first diffusion coefficient and a second leveling agent having a second diffusion coefficient, are provided. Such plating baths deposit a metal layer, particularly a copper layer, that is substantially planar across a range of electrolyte concentrations. Methods of depositing metal layers using such plating baths are also disclosed. These baths and methods are useful for providing a planar layer of copper on a substrate having small apertures, such as an electronic device. | 06-04-2009 |
20100183976 | Compositions and processes for photolithography - Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing. | 07-22-2010 |
20100183977 | Compositions and processes for photolithography - Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing. | 07-22-2010 |
20100297550 | Compositions comprising sulfonamide material and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 11-25-2010 |
20100304290 | Compositions and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second. | 12-02-2010 |
20110223535 | PHOTORESIST COMPRISING NITROGEN-CONTAINING COMPOUND - New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups. | 09-15-2011 |
20120077120 | PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT - New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer | 03-29-2012 |
20120156595 | COMPOSITIONS COMPRISING SUGAR COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sugar substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 06-21-2012 |
20120171626 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist. | 07-05-2012 |
20120225384 | COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY - Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing. | 09-06-2012 |
20120301823 | POLYMER COMPOSITION AND PHOTORESIST COMPRISING THE POLYMER - A copolymer comprises the polymerized product of a base-soluble monomer of formula (I): | 11-29-2012 |
20130017487 | COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY - Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing. | 01-17-2013 |
20130137035 | SURFACE ACTIVE ADDITIVE AND PHOTORESIST COMPOSITION COMPRISING SAME - A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): | 05-30-2013 |
20130244178 | PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT - New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer | 09-19-2013 |
20130344439 | PHOTORESISTS COMPRISING AMIDE COMPONENT - New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer | 12-26-2013 |
20140065540 | PHOTORESIST AND COATED SUBSTRATE COMPRISING SAME - A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): | 03-06-2014 |
20140120469 | THERMAL ACID GENERATORS FOR USE IN PHOTORESIST - New photoresist compositions are provided that comprise a component that comprises a thermal acid generator and a quencher. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and at least one thermal acid generator and at least one quencher that can function to improve line width roughness and photospeed. | 05-01-2014 |
20140120470 | PHOTORESISTS COMPRISING IONIC COMPOUND - New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer. | 05-01-2014 |
20140295348 | COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY - Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing. | 10-02-2014 |