Patent application number | Description | Published |
20140238211 | Paper cutting machine - A paper cutting machine contains a base, a holder, a connecting member, a driving member, a cutting member, and a protective cover covered on the holder. The base includes four first holes, a second hole, a first slot, and a second slot. The holder includes two first orifices, two second orifices, and a covering seat. The connecting member connects with a first bolt of the holder and includes a press bar, a reinforcement bar, and a handle. The driving member includes a first aperture, a seat, a recess, and a second aperture. The cutting member includes an inserting piece and a cutout and is placed into the recess and is fixed by screwing the positioning rod into the cutout. The first bolt has two torsion springs, one end of each torsion spring abuts against the press bar, another end of the each torsion spring pushes against the second bolt. | 08-28-2014 |
20140318343 | Punching Machine - A punching machine contains a base, a bottom cover, a pressing seat, a slot, and a stopping recess. The punching machine also contains a holder, and a limiting groove has a press device mounted therein and fixed in an imitation notch of the holder, the press device has a first positioning piece, at least one spacing block, a second positioning piece, and a third positioning piece. The holder has at least one opening, the first positioning piece has at least one first pore, the second positioning piece has at least one second pore, and the third positioning piece has at least one third pore. A respective one of at least one column has a shape-varying cross section so as to matching with a shape of each second pore and each third pore. Also, the forcing controller further has a locating element. | 10-30-2014 |
Patent application number | Description | Published |
20100282205 | INFRARED COMPLEX AND A VEHICLE POWER IMPROVING SYSTEM USING THE INFRARED COMPLEX - An infrared complex and a vehicle power improving system using the infrared complex are disclosed. The infrared complex is made by an infrared material and a composite material that is coated on the infrared material. The vehicle power improving system comprises at least an element for increasing oxygen content that is fixed in the air intake line of a vehicle engine, at least a first element for reducing oxidized fuel oil and covering the fuel oil intake line of the vehicle engine, at least a second element attached to a shock absorber of the vehicle for restoring deformed shock oil molecules in the shock absorber, and a voltage stabilizer electrically connected with the battery and the generator of the vehicle. Thereby, it is able to increase the oxygen content of the air flowing into the vehicle engine and to reduce the oxidized oil in the fuel oil intake line, so that the utility efficiency of fuel oil can be enhanced and the amount of waste exhaust gas can be reduced. | 11-11-2010 |
20130260587 | BOARD-TO-BOARD CONNECTOR - A board-to-board connector made in the form of the combination of a male connector and a female connector is disclosed to include an electrically insulative connector body including a long rectangular mating part, a receptacle part and a plug part respectively located at two opposite sides of the long rectangular mating part, a recessed receiving chamber defined between the long rectangular mating part and the receptacle part and a recessed mating chamber defined between the long rectangular mating part and the plug part, terminal grooves located at the receptacle part, a positioning protruding member located at the plug part and a recessed mating chamber surrounded by the long rectangular mating part and the positioning protruding member, first conducting terminals respectively mounted in the terminal grooves, and second conducting terminals mounted in the positioning protruding member of the plug part of the electrically insulative connector body. | 10-03-2013 |
20130260588 | BOARD-TO-BOARD CONNECTOR - A board-to-board connector made in the form of the combination of a male connector and a female connector is disclosed to include an electrically insulative connector body including a long rectangular mating part, a receptacle part and a plug part respectively located at two opposite sides of the long rectangular mating part, a recessed receiving chamber defined between the long rectangular mating part and the receptacle part and a recessed mating chamber defined between the long rectangular mating part and the plug part, terminal grooves located at the receptacle part, a positioning protruding member located at the plug part and a recessed mating chamber surrounded by the long rectangular mating part and the positioning protruding member, first conducting terminals respectively mounted in the terminal grooves, and second conducting terminals mounted in the positioning protruding member of the plug part of the electrically insulative connector body. | 10-03-2013 |
20130260589 | BOARD-TO-BOARD CONNECTOR - A board-to-board connector made in the form of the combination of a male connector and a female connector is disclosed to include an electrically insulative connector body including a long rectangular mating part, a receptacle part and a plug part respectively located at two opposite sides of the long rectangular mating part, a recessed receiving chamber defined between the long rectangular mating part and the receptacle part and a recessed mating chamber defined between the long rectangular mating part and the plug part, terminal grooves located at the receptacle part, a positioning protruding member located at the plug part and a recessed mating chamber surrounded by the long rectangular mating part and the positioning protruding member, first conducting terminals respectively mounted in the terminal grooves, and second conducting terminals mounted in the positioning protruding member of the plug part of the electrically insulative connector body. | 10-03-2013 |
20140143511 | INTERFACE CONVERSION DEVICE AND STORAGE DEVICE USING THE SAME - An interface conversion device, applicable to a storage device, includes a first connection port, a second connection port, a measuring unit and a processing unit. The first connection port transmits a first signal and a power signal via a first communication interface. The second connection port transmits a second signal and the power signal to the storage device via a second communication interface. The first communication interface and the second communication interface are different from each other. The measuring unit receives the power signal from the first connection port to measure the power signal and produce a measurement signal. The measuring unit outputs the power signal to the second connection port. The processing unit receives and converts the first signal into the second signal and outputs the second signal via the second connection port. The processing unit receives the measurement signal to calculate a power consumption value. | 05-22-2014 |
Patent application number | Description | Published |
20090274085 | SYSTEM AND METHOD FOR PROVIDING MULTICAST AND/OR BROADCAST SERVICES - A method for a base station to provide a multicast and/or broadcast service (MBS) in a communication system. The method includes: transmitting system information on a system control information block (SCIB); transmitting MBS control information that is changed with relatively high frequency on a secondary multicast/broadcast control information block (S-MCIB); and transmitting MBS content data based on the MBS control information. | 11-05-2009 |
20090323564 | METHOD FOR OPERATION OF SYNCHRONOUS HARQ IN A WIRELESS COMMUNICATION SYSTEM - A method of operating synchronous Hybrid Automatic Repeat Request (HARQ) between a transmitting station and a receiving station in a Time-Division Duplex (TDD) communication system includes configuring, at the transmitting station, a plurality of HARQ processes; transmitting data packets to the receiving station using the plurality of HARQ processes, wherein the data packets do not include HARQ process identification information; receiving, from the receiving station, a plurality of HARQ feedback packets indicative of whether the data packets were correctly received at the receiving station, wherein the plurality of HARQ feedback packets do not include HARQ process identification information and wherein the plurality of HARQ feedback packets are received in a downlink slot; and mapping, by the transmitting station, the plurality of HARQ feedback packets to the plurality of HARQ processes. | 12-31-2009 |
20100067490 | SYSTEM AND METHOD FOR PROVIDING SERVICE CONTINUITY OF MULTICAST AND BROADCAST SERVICES IN A WIRELESS COMMUNICATION SYSTEM - There is provided a method of handing over a provided service from a serving base station to a target base station, the service including streaming content sent to a mobile station. The method includes receiving, at the target base station, a handover request from the serving base station, the handover request identifying the streaming content being provided to the mobile station by the serving base station, and an interrupt data packet, of the streaming content, last transmitted to the mobile station. The method includes sending a handover response to the serving base station and receiving a notification from the serving base station indicating that the target base station is selected for handover. The method includes receiving, from the serving base station, subsequent data packets of the streaming content that are later in time than the interrupt data packet and sending the received subsequent data packets to the mobile station. | 03-18-2010 |
20100131814 | Method for operation of synchronous HARQ in a wireless communication system - A method for operating synchronous HARQ between a transmitting station and a receiving station in a TDD communication system, includes configuring a plurality of HARQ processes at the transmitting station, and transmitting a data burst in a first subframe to the receiving station via one of the plurality of HARQ processes and using a frame structure including a plurality of regions of subframes. The method also includes receiving a second subframe transmitted from the receiving station and containing a HARQ feedback indicative of whether the data burst was correctly received at the receiving station. Further, the method includes determining whether the HARQ feedback is an acknowledgement (ACK) or a negative acknowledgement (NACK), and retransmitting, via the one of the plurality of HARQ processes, the data burst in a third subframe to the receiving station if it is determined that the HARQ feedback is a NACK. A total number of plurality of HARQ processes is determined based on a total number of uplink subframes between the first subframe and the third subframe. | 05-27-2010 |
20100278093 | Method and Apparatus for Multicast and Broadcast Retransmission in Wireless Communication Systems - Embodiments of method and apparatus for reception of multicast and broadcast (MBS) transmissions in a wireless communication system including a set of receiving devices is disclosed. A method embodiment includes encoding, by a transmission device, a plurality of MBS data bits to generate a plurality of MBS data versions, and transmitting, to the set of receiving devices, the plurality of MBS data versions, wherein the plurality of MBS data versions are transmitted in a predefined transmission pattern. The method also includes transmitting, to the set of receiving devices, identification and decoding information associated with each of the plurality of MBS data versions. | 11-04-2010 |
Patent application number | Description | Published |
20090185399 | ACTIVE START JUDGMENT CIRCUIT - An active start judgment circuit is electrically connected to an AC/DC transforming power supply which has at least one standby power unit to transform AC to DC in regular conditions and a main power unit to transform the AC to the DC in an ON condition for operation of an electronic equipment. The start judgment circuit bridges the standby power unit and the main power unit, and generates a reference potential based on a voltage output from the standby power unit, and gets a power signal from the standby power unit to be compared with the reference potential to output a start signal to the main power unit to transform the AC to the DC. Thus the standby power unit can actively drive the main power unit to supply DC power to activate the electronic equipment. | 07-23-2009 |
20130026637 | METAL GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR - An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate electrode of a field effect transistor comprises a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and an upper portion formed of a second metal material, wherein the upper portion has a protrusion and a bulk portion, wherein the bulk portion has a second width, wherein the protrusion extends into the recess, wherein a ratio of the second width to the first width is from about 5 to 10. | 01-31-2013 |
20130056836 | Techniques Providing Metal Gate Devices with Multiple Barrier Layers - A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers. | 03-07-2013 |
20140004694 | METAL GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR | 01-02-2014 |
20150017796 | TECHNIQUES PROVIDING METAL GATE DEVICESWITH MULTIPLE BARRIER LAYERS - A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers. | 01-15-2015 |
20150333064 | Techniques Providing Metal Gate Devices With Multiple Barrier Layers - A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers. | 11-19-2015 |
20160064223 | METHOD OF FORMING METAL GATE ELECTRODE - An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H | 03-03-2016 |
Patent application number | Description | Published |
20140208579 | Manufacturing Method of a Stator of an Alternator - The present invention relates to a manufacturing method of a stator of an alternator, providing an elongated stator body having a plurality of parallel grooves, winding a plurality of wires in the plurality of different grooves, and then rolling the elongated stator body wound with the wires into an annular shape to form an annular stator. | 07-31-2014 |
20140210300 | Stator of an Alternator - The present invention relates to a stator of an alternator, providing an elongated stator body having a plurality of parallel grooves, winding a plurality of wires in the plurality of different grooves, and then rolling the elongated stator body wound with the wires into an annular shape to form an annular stator. | 07-31-2014 |
20140210301 | Stator of an Alternator - The present invention relates to a stator of an alternator, providing an elongated stator body having a plurality of parallel grooves, winding a plurality of wires in the plurality of different grooves, and then rolling the elongated stator body wound with the wires into an annular shape to form an annular stator. | 07-31-2014 |
20160006308 | Wound Stator for Alternating-Current Generator - The present invention relates to a wound stator. The wound stator comprises: a stator and a plurality of wires. The stator comprises: an annular body and a plurality of radial grooves defined therein. The annular body has a plurality of separating posts protruding inwardly and radially from an inner circumference of the annular body. An end of each of the separating posts extends from its two sides to form a plurality of magnetic shoes. The plurality of radial grooves is defined between the separating posts. Each of the grooves has an opening defined between adjacent two of the plurality of magnetic shoes. The plurality of wires comprises: a first end, a second end, and a plurality of wave-shaped coils located between the first end and second end. Each wave-shaped coil is formed of straight portions and curved portions that alternate with each other. | 01-07-2016 |
20160006309 | Vehicle Alternating-Current Generator - The present invention relates to a vehicle alternating-current generator. The vehicle alternating-current generator comprises a wound stator and a rotor. The wound stator comprises: a stator and a plurality of wires. The stator has a plurality of radial grooves arranged at an inner circumference of the stator. Each of the plurality of wires comprises: a first end, a second end, and a plurality of wave-shaped coils located between the first end and second end. Each wave-shaped coil is formed of straight portions and curved portions that alternate with each other. The straight portions of each wire are sequentially embedded in corresponding grooves of the stator, so that each of the grooves is embedded with the wires. | 01-07-2016 |
20160006310 | Wound Stator and Wires for the Same - The present invention relates to a wound stator and wires for the same. The wound stator for an alternating-current generator comprises: a stator, having a plurality of radial grooves arranged at an inner circumference of the stator; and a plurality of wires for the stator. Each wire comprises: a first end, a second end, and a plurality of wave-shaped coils located between the first end and second end. Each wave-shaped coil is formed of straight portions and curved portions that alternate with each other. The straight portions of each wire are sequentially embedded in corresponding grooves of the stator so that each of the grooves is embedded with the wires. | 01-07-2016 |
20160006328 | Method of Manufacturing Wound Stator for Alternating-Current Generator - The present invention relates to a method of manufacturing a wound stator. The method promises the following steps: (1) providing a stator, which has a plurality of radial grooves arranged at an inner circumference of the stator, (2) providing a plurality of wires for the stator, and (3) sequentially embedding the straight portions of each wire in corresponding grooves of the stator so that each of the grooves is embedded with the wires. Each of the plurality of wire comprises: a first end, a second end, and a plurality of wave-shaped coils located between the first end and second end. Each wave-shaped coil is formed of straight portions and curved portions that alternate with each other. | 01-07-2016 |
Patent application number | Description | Published |
20130020648 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. The semiconductor device includes: a substrate; a metal-oxide semiconductor (MOS) transistor disposed in the substrate; and a shallow trench isolation (STI) disposed in the substrate and around the MOS transistor, in which the STI comprises a stress material. | 01-24-2013 |
20130037886 | SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME - A semiconductor device includes a semiconductor substrate, at least a first fin structure, at least a second fin structure, a first gate, a second gate, a first source/drain region and a second source/drain region. The semiconductor substrate has at least a first active region to dispose the first fin structure and at least a second active region to dispose the second fin structure. The first/second fin structure partially overlapped by the first/second gate has a first/second stress, and the first stress and the second stress are different from each other. The first/second source/drain region is disposed in the first/second fin structure at two sides of the first/second gate. | 02-14-2013 |
20130045579 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes the following steps. A semiconductor substrate having a first strained silicon layer is provided. Then, an insulating region such as a shallow trench isolation (STI) is formed, where a depth of the insulating region is substantially larger than a depth of the first strained silicon layer. Subsequently, the first strained silicon layer is removed, and a second strained silicon layer is formed to substitute the first strained silicon layer. | 02-21-2013 |
20130056827 | NON-PLANAR SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial layers respectively cover a part of the fin-shaped structures and are located on the nitrogen-containing layer. A non-planar semiconductor process is also provided for forming the semiconductor structure. | 03-07-2013 |
20130078780 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. An interlayer is formed on a substrate. A first metallic oxide layer is formed on the interlayer. A reduction process is performed to reduce the first metallic oxide layer into a metal layer. A high temperature process is performed to transform the metal layer to a second metallic oxide layer. | 03-28-2013 |
20130089962 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate is provided. A gate structure is formed on the substrate. A spacer is formed on the substrate beside the gate structure. The spacer includes a first spacer and a second spacer located on the external surface of the first spacer. A first etching process is performed to etch and form at least a recess in the substrate beside the spacer and entirely remove the second spacer. The etching rate of the first etching process to the first spacer is lower than the etching rate of the first etching process to the second spacer. An epitaxial layer is formed in the recess. | 04-11-2013 |
20130092954 | Strained Silicon Channel Semiconductor Structure and Method of Making the Same - A method for fabricating a strained channel semiconductor structure includes providing a substrate, forming at least one gate structure on said substrate, performing an etching process to form two recesses in said substrate at opposites sides of said gate structure, the sidewall of said recess being concaved in the direction to said gate structure and forming an included angle with respect to horizontal plane, and performing a pre-bake process to modify the recess such that said included angle between the sidewall of said recess and the horizontal plane is increased. | 04-18-2013 |
20130193585 | Fabrication method and structure of through silicon via - A method of fabricating a through silicon via (TSV) structure, in which, a patterned mask is formed on a substrate, the patterned mask has an opening, a spacer-shaped structure is formed on a sidewall of the opening, and a via hole having a relatively enlarged opening is formed by etching the spacer-shaped structure and the substrate through the opening after the spacer-shaped structure is formed. A TSV structure, in which, a via hole has an opening portion and a body portion, the opening portion is a relatively enlarged opening and has a tapered shape having an opening size of an upper portion greater than an opening size of a lower portion. | 08-01-2013 |
20130228836 | NON-PLANAR SEMICONDUCTOR STRUCTURE - A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial layers respectively cover a part of the fin-shaped structures and are located on the nitrogen-containing layer. Anon-planar semiconductor process is also provided for forming the semiconductor structure. | 09-05-2013 |
20130256701 | STRAINED SILICON CHANNEL SEMICONDUCTOR STRUCTURE - A strained silicon channel semiconductor structure comprises a substrate having an upper surface, a gate structure formed on the upper surface, at least one recess formed in the substrate at lateral sides of the gate structure, wherein the recess has at least one sidewall which has an upper sidewall and a lower sidewall concaved in the direction to the gate structure, and the included angle between the upper sidewall and horizontal plane ranges between 54.5°-90°, and an epitaxial layer filled into the two recesses. | 10-03-2013 |
20130270612 | Non-Planar FET and Manufacturing Method Thereof - The present invention provides a non-planar FET which includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET. | 10-17-2013 |
20140065775 | FABRICATION METHOD FOR SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, which includes at least a fin structure and at least a gate semiconductor layer disposed thereon. The gate semiconductor layer covers a portion of the fin structure. Then a sacrificial layer is deposited to cover the fin structure entirely. Subsequently, a top surface of the fin structure is exposed from the sacrificial layer through an etching process. A material layer is then deposited, which covers the gate semiconductor layer, the fin structure and the sacrificial layer conformally. Finally, the material layer is etched until the top surface of the fin structure is exposed and a first spacer is concurrently formed on side surfaces of the gate semiconductor layer. | 03-06-2014 |
20140117455 | MULTIGATE FIELD EFFECT TRANSISTOR AND PROCESS THEREOF - A multigate field effect transistor includes two fin-shaped structures and a dielectric layer. The fin-shaped structures are located on a substrate. The dielectric layer covers the substrate and the fin-shaped structures. At least two voids are located in the dielectric layer between the two fin-shaped structures. Moreover, the present invention also provides a multigate field effect transistor process for forming said multigate field effect transistor including the following steps. Two fin-shaped structures are formed on a substrate. A dielectric layer covers the substrate and the two fin-shaped structures, wherein at least two voids are formed in the dielectric layer between the two fin-shaped structures. | 05-01-2014 |
20140349467 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface. | 11-27-2014 |
20140367779 | SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF - A semiconductor structure includes a fin-shaped structure and a gate. The fin-shaped structure is located in a substrate, wherein the fin-shaped structure has a through hole located right below a vacant part. The gate surrounds the vacant part. Moreover, the present invention also provides a semiconductor process including the following steps for forming said semiconductor structure. A substrate is provided. A fin-shaped structure is formed in the substrate, wherein the fin-shaped structure has a bottom part and a top part. A part of the bottom part is removed to form a vacant part in the corresponding top part, thereby forming the vacant part over a through hole. A gate is formed to surround the vacant part. | 12-18-2014 |
20150079777 | Method of Manufacturing Semiconductor Device Having Metal Gate - A method of manufacturing a semiconductor device having a metal gate is provided. A substrate having a first conductive type transistor and a second conductive type transistor formed thereon is provided. The first conductive type transistor has a first trench and the second conductive type transistor has a second trench. A first work function layer is formed in the first trench. A hardening process is performed for the first work function layer. A softening process is performed for a portion of the first work function layer. A pull back step is performed to remove the portion of the first work function layer. A second work function layer is formed in the second trench. A low resistive metal layer is formed in the first trench and the second trench. | 03-19-2015 |
20150206803 | METHOD OF FORMING INTER-LEVEL DIELECTRIC LAYER - A method of forming an inter-level dielectric layer including the following step is provided. Two gate structures are formed on a substrate. A first oxide layer is formed to conformally cover the two gate structures and the substrate. The first oxide layer is etched ex-situ by a high density plasma (HDP) etching process. A second oxide layer is formed in-situ on the first oxide layer and fills a gap between the two gate structures by a high density plasma (HDP) depositing process. | 07-23-2015 |
20150263170 | SEMICONDUCTOR PROCESS FOR MODIFYING SHAPE OF RECESS - A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface. | 09-17-2015 |
20150303283 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the following steps. A substrate including at least a fin layer and a plurality of gate electrodes is provided. A tilt and twist ion implantation is performed to form a plurality of doped regions in the fin layer. An etching process is performed to remove the doped regions to form a plurality of recesses in the fin layer. | 10-22-2015 |
20150348971 | SEMICONDUCTOR DEVICE HAVING STRAINED FIN STRUCTURE AND METHOD OF MAKING THE SAME - A semiconductor device includes a semiconductor substrate, at least a first fin structure, at least a second fin structure, a first gate, a second gate, a first source/drain region and a second source/drain region. The semiconductor substrate has at least a first active region to dispose the first fin structure and at least a second active region to dispose the second fin structure. The first/second fin structure partially overlapped by the first/second gate has a first/second stress, and the first stress and the second stress are different from each other. The first/second source/drain region is disposed in the first/second fin structure at two sides of the first/second gate. | 12-03-2015 |
20150357190 | SEMICONDUCTOR DEVICE HAVING FIN-SHAPED STRUCTURE AND METHOD FOR FABRICATING THE SAME - A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween. | 12-10-2015 |
20160071800 | SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF - A semiconductor structure including a dielectric layer, a titanium layer, a titanium nitride layer and a metal is provided. The dielectric layer is disposed on a substrate, wherein the dielectric layer has a via. The titanium layer covers the via, wherein the titanium layer has tensile stress lower than 1500 Mpa. The titanium nitride layer conformally covers the titanium layer. The metal fills the via. The present invention also provides a semiconductor process for forming said semiconductor structure. The semiconductor process includes the following steps. A dielectric layer is formed on a substrate, wherein the dielectric has a via. A titanium layer conformally covers the via, wherein the titanium layer has compressive stress lower than 500 Mpa. A titanium nitride layer is formed to conformally cover the titanium layer. A metal fills the via. | 03-10-2016 |
20160079067 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench. | 03-17-2016 |
20160111527 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH FIN-SHAPED STRUCTURE - A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer. | 04-21-2016 |