| Patent application number | Description | Published |
|---|
| 20100181500 | METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION - A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer. | 07-22-2010 |
| 20100240224 | MULTI-ZONE SEMICONDUCTOR FURNACE - A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of heaters arranged and operative to heat the chamber. The heating system includes at least one top heater; at least one bottom heater, and a plurality of sidewall heaters spaced along the height of the reaction chamber to control temperature variations within in the chamber and promote uniform film deposit thickness on the wafers. | 09-23-2010 |
| 20100248496 | ROTATABLE AND TUNABLE HEATERS FOR SEMICONDUCTOR FURNACE - A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers. | 09-30-2010 |
| 20110174991 | SCANNING METHOD AND SYSTEM USING 2-D ION IIMPLANTER - An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer. | 07-21-2011 |
| 20120009692 | System and Method of Dosage Profile Control - A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation. | 01-12-2012 |
| 20120264296 | METHODS OF FORMING THROUGH SILICON VIA OPENINGS - A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical. | 10-18-2012 |
| 20120292629 | LIGHT EMITTING DIODE AND METHOD OF FABRICATION THEREOF - A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process. | 11-22-2012 |
| 20130068162 | System and Method of Dosage Profile Control - A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation. | 03-21-2013 |
| 20130068960 | Apparatus for Monitoring Ion Implantation - An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer. | 03-21-2013 |
| 20130075623 | MULTI-ION BEAM IMPLANTATION APPARATUS AND METHOD - An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer. | 03-28-2013 |
| 20130110276 | MULTI-FACTOR ADVANCED PROCESS CONTROL METHOD AND SYSTEM FOR INTEGRATED CIRCUIT FABRICATION | 05-02-2013 |
| 20130140987 | ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL - The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode. | 06-06-2013 |
| 20130171746 | MULTI-ZONE TEMPERATURE CONTROL FOR SEMICONDUCTOR WAFER - An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's. | 07-04-2013 |
| 20130264498 | SYSTEM AND METHOD OF ION NEUTRALIZATION WITH MULTIPLE-ZONED PLASMA FLOOD GUN - An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer. | 10-10-2013 |
| 20130270454 | SYSTEM AND METHOD OF ION BEAM SOURCE FOR SEMICONDUCTOR ION IMPLANTATION - An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field. | 10-17-2013 |
| 20130280823 | Apparatus for Monitoring Ion Implantation - An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer. | 10-24-2013 |
| 20130295753 | ION BEAM DIMENSION CONTROL FOR ION IMPLANTATION PROCESS AND APPARATUS, AND ADVANCED PROCESS CONTROL - A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate. | 11-07-2013 |
| 20130330938 | ROTATABLE AND TUNABLE HEATERS FOR SEMICONDUCTOR FURNACE - A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers. | 12-12-2013 |
| 20140235053 | Methods of Forming Through Silicon Via Openings - A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical. | 08-21-2014 |
| 20150083998 | LIGHT EMITTING DIODE AND METHOD OF FABRICATION THEREOF - A light-emitting diode (LED) element includes a substrate and a GaN layer formed on the substrate. The GaN layer includes a boundary layer including a surface of the GaN opposing the substrate. The surface has a micro-roughening texture and a macro-roughening texture. The boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions. | 03-26-2015 |
