Patent application number | Description | Published |
20130019938 | METHOD FOR FORMING PHOTOVOLTAIC CELL, AND RESULTING PHOTOVOLTAIC CELL - A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout. | 01-24-2013 |
20130095414 | Lithography Mask and Method of Forming a Lithography Mask - A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (Mo | 04-18-2013 |
20130193565 | SEMICONDUCTOR MASK BLANKS WITH A COMPATIBLE STOP LAYER - Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer. | 08-01-2013 |
20130323625 | Systems and Methods for Lithography Masks - Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate Mo | 12-05-2013 |
20140014176 | METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE - A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the substrate; forming first grooves in the first conductive layer using a nanoimprint and etching process; forming an absorption layer over the first conductive layer, the absorption layer filling in the first grooves; forming second grooves in the absorption layer using a nanoimprint process; forming a second conductive layer over the absorption layer, the second conductive layer filling in the second grooves; and forming third grooves in the second conductive layer and the absorption layer, thereby defining a photovoltaic cell unit. | 01-16-2014 |
20140106262 | Image Mask Film Scheme and Method - A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process. | 04-17-2014 |
20140255825 | Mask Blank for Scattering Effect Reduction - Some embodiments relate a method of forming a photomask for a deep ultraviolet photolithography process (e.g., having an exposing radiation with a wavelength of 193 nm). The method provides a mask blank for a deep ultraviolet photolithography process. The mask blank has a transparent substrate, an amorphous isolation layer located over the transparent substrate, and a photoresist layer located over the amorphous isolation layer. The photoresist layer is patterned by selectively removing portions of the photoresist layer using a beam of electrons. The amorphous isolation layer is subsequently etched according to the patterned photoresist layer to form one or more mask openings. The amorphous isolation layer isolates electrons backscattered from the beam of electrons from the photoresist layer during patterning, thereby mitigating CD and overlay errors caused by backscattered electrons. | 09-11-2014 |
20140273301 | MOVEABLE AND ADJUSTABLE GAS INJECTORS FOR AN ETCHING CHAMBER - An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity. | 09-18-2014 |
20140335446 | Systems and Methods for Lithography Masks - Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate Mo | 11-13-2014 |
20150024306 | MASK OVERLAY CONTROL - Some embodiments of the present disclosure relate to a method of patterning a workpiece with a mask, wherein a scale factor between a geometry of the mask and a corresponding target shape of the mask is determined. The scale factor results from thermal expansion of the mask and geometry due to heating of the mask during exposure to radiation by an electron beam (e-beam) in the mask manufacturing process. A number of radiation pulses necessary to dispose the geometry on the mask is determined. A scale factor for the mask is then determined from the number of pulses. The target shape is then generated on the mask by re-scaling the geometry according to the scale factor prior to mask manufacturing. This method compensates for thermal deformation due to e-beam heating to improve OVL variability in advanced technology nodes. | 01-22-2015 |
20150132685 | Lithography Mask and Method of Forming a Lithography Mask - A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (Mo | 05-14-2015 |
20150227038 | MASK OVERLAY CONTROL - In some embodiments, a mask patterning system includes an electronic memory configured to store an integrated circuit mask layout. A computation tool determines a number of radiation shots to be used to write the integrated circuit mask layout to a physical mask. The computation tool also determines a scaling factor which accounts for expected thermal expansion of the physical mask due to the number of radiation shots used in writing the integrated circuit mask layout to the physical mask. An ebeam or laser writing tool writes the integrated circuit mask layout to the physical mask based on the scaling factor and by using the number of radiation shots. | 08-13-2015 |
Patent application number | Description | Published |
20120275090 | METALLIC HOUSING, METHOD FOR MAKING THE SAME AND ELECTRONIC DEVICE USING THE SAME - A metallic housing for an electronic device, the metallic housing includes a main body defining a receiving chamber for receiving electronic components and an opening communicating with the receiving chamber, and a covering plate positioned on the main body adjacent to a side of the main body. The covering plate is welded to the main body by friction stir welding and a welded region is formed on a side surface of the metallic housing such that the welded region is smooth with the main body and the covering plate. A method for making the metallic housing and an electronic device using the metallic housing is also disclosed. | 11-01-2012 |
20120309210 | ELECTRICAL CONNECTOR WITH POWER PLUG AND POWER SOCKET - An electronic device includes a power plug and a power socket coupled to the power plug. The power plug includes a housing, two plug contacts, one conductive member, two conductive resilient pieces, and two magnetic members. The conductive resilient pieces are positioned in the housing, and are electrically connected to the conductive member. The magnetic members are positioned in the housing, and opposite to the at least two conductive resilient pieces. The power socket includes an inner housing, two socket contacts, and two metal pieces. The inner housing defines an assembly groove to receive the power plug. The metal pieces are positioned in the assembly groove of the inner housing, and are opposite to the magnetic members, such that a magnetic attraction force exerted between the metal pieces and the magnetic member actuates the power plug. | 12-06-2012 |
20130032630 | FRICTION STIR WELDING REPAIRING METHOD OF METALLIC HOUSING - A friction stir welding repairing method for repairing a defective welding area, in which the defective welding area is defined in a predetermined welding area of a metallic housing, is described as follows. A repairing welding tool has a main portion and a stir end extending from an end of the main portion, and a diameter of the stir end is larger than a diameter of the defective welding area. The repairing welding tool is rotated and inserted to a region of the predetermined welding area adjacent to the defective welding area. The repairing welding tool is rotated and moved across the defective welding area. The repairing welding tool is pulled out of the predetermined welding area, and then the defective welding area is cooled. | 02-07-2013 |
20130037602 | FRICTION STIR WELDING METHOD OF METALLIC HOUSING - A friction stir welding method of manufacturing a metallic housing including electronic device housing is described as follow. A first workpiece and a second workpiece made of metal are provided. The first workpiece is attached to the second workpiece. A joining tool is provided, which includes a shaft shoulder and a stir pin extending from a friction surface of the shaft shoulder. A diameter of the shaft shoulder is in a range from about | 02-14-2013 |