Patent application number | Description | Published |
20120164835 | Method of Forming Via Hole - The present invention provides a method of forming via holes. First, a substrate is provided. A plurality of first areas is defined on the substrate. A dielectric layer and a blocking layer are formed on the substrate. A patterned photoresist layer is formed on the blocking layer. The patterned photoresist layer includes a plurality of holes arranged in a regular array wherein the area of the hole array is greater than those of the first areas. The blocking layer in the first areas is removed by using the patterned photoresist layer as a mask. Lastly, the dielectric layer is patterned to form at least a via hole in the dielectric layer in the first area. | 06-28-2012 |
20120329280 | METHOD FOR FORMING PHOTORESIST PATTERNS - A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index. | 12-27-2012 |
20130106000 | ALIGNMENT ACCURACY MARK | 05-02-2013 |
20130200535 | OVERLAY MARK FOR MULTIPLE PRE-LAYERS AND CURRENTLY LAYER - An overlay mark is described, including N (N≧2) groups of first x-directional linear patterns each defined from a different one of N pre-layers, N groups of second x-directional linear patterns of a current layer, N groups of first y-directional linear patterns each defined from a different one of the N pre-layers, and N groups of second y-directional linear patterns of the current layer. Each group of second x-directional linear patterns is disposed together with one group of first x-directional linear patterns, wherein the second linear patterns and the x-directional linear patterns are arranged alternately. Each group of second y-directional linear patterns is disposed together with one group of first y-directional linear patterns, wherein the second linear patterns and the first linear patterns are arranged alternately. | 08-08-2013 |
20140120476 | Method of forming a photoresist pattern - A method of forming a photoresist pattern, in which, a substrate is coated with a photoresist layer, an exposure process is performed on the photoresist layer to expose the photoresist layer, the photoresist layer is rinsed with a surfactant after the exposure process is performed, and the photoresist layer is post-exposure baked after the photoresist layer is rinsed with the surfactant. | 05-01-2014 |
20150055125 | MEASUREMENT METHOD OF OVERLAY MARK - A measurement method of an overlay mark is provided. An overlay mark on a wafer is measured with a plurality of different wavelength regions of an optical measurement tool, so as to obtain a plurality of overlay values corresponding to the wavelength regions. The overlay mark on the wafer is measured with an electrical measurement tool to obtain a reference overlay value. The wavelength region that corresponds to the overlay value closest to the reference overlay value is determined as a correct wavelength region for the overlay mark. | 02-26-2015 |
20150072529 | METHOD OF FORMING VIA HOLE - The present invention provides a method of forming via holes. First, a substrate is provided. A plurality of first areas is defined on the substrate. A dielectric layer and a blocking layer are formed on the substrate. A patterned layer is formed on the blocking layer such that a sidewall of the blocking layer is completely covered by the patterned layer. The patterned layer includes a plurality of holes arranged in a regular array wherein the area of the hole array is greater than those of the first areas. The blocking layer in the first areas is removed by using the patterned layer as a mask. Lastly, the dielectric layer is patterned to form at least a via hole in the dielectric layer in the first area. | 03-12-2015 |
20150072532 | PATTERNING METHOD - A patterning method is provided. First, a material layer is formed over a substrate. Thereafter, a plurality of directed self-assembly (DSA) patterns are formed on the material layer. Afterwards, a patterned photoresist layer is formed by using a single lithography process. The patterned photoresist layer covers a first portion of the DSA patterns and exposes a second portion of the DSA patterns. Further, the material layer is patterned by an etching process, using the patterned photoresist layer and the second portion of the DSA patterns as a mask. | 03-12-2015 |