Patent application number | Description | Published |
20080303018 | Silicon-Based Light Emitting Diode for Enhancing Light Extraction Efficiency and Method of Fabricating the Same - Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics. | 12-11-2008 |
20090032836 | SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer. | 02-05-2009 |
20110018006 | MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE - A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside. | 01-27-2011 |
Patent application number | Description | Published |
20090121232 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL HAVING THE SAME - An array substrate, a method for manufacturing the array substrate and a display panel having the array substrate are presented. The method includes forming a thin-film transistor (TFT) on a base substrate. A passivation layer covers the TFT. A color filter layer is formed on the passivation layer. An organic protective layer is formed on the color filter layer, and has a type of photoresist that is substantially the same as that of the color filter layer. A contact hole is formed through the organic protective layer, the color filter layer and the passivation layer, partially exposing the TFT. A pixel electrode is formed on the organic protective layer to be electrically connected to a portion of the TFT. The contact hole may be formed through the organic protective layer, the color filter layer and the passivation layer by a single photolithography process, simplifying the array substrate manufacturing process. | 05-14-2009 |
20100021832 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A COLOR FILTER SUBSTRATE BY USING THE SAME - A photoresist composition includes a coloring agent, a binder resin, a cross-linker, a photo-polymerization initiator and a solvent. The coloring agent includes an anthraquinone-based dye and a pigment. A color filter formed from the photoresist composition has a relatively greater light-transmittance. Thus, a contrast of a display apparatus having the color filter may be improved. | 01-28-2010 |
20110304804 | DISPLAY DEVICE - A display device includes a light emitting unit and a display panel including a first color filter. The light emitting unit includes a light source generating a blue light, and a light-converting part converting the blue light into a white light and emitting the white light to an exterior. The first color filter, through which the white light passes, includes a first coloring agent that absorbs about 95% to about 100% of light having wavelength of about 420 nm to about 470 nm in the white light. Thus, a color reproducibility of the display device may be improved. | 12-15-2011 |
20130329155 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display includes a light blocking member on a plurality of color filters, wherein the light blocking member includes a first light blocking member extending along a data line and a second light blocking member extending along a gate line. The first light blocking member is disposed between the plurality of color filters such that a first portion and a second portion of the first light blocking member overlapping an edge of at least one of the color filters respectively have a first width and a second width larger than the first width, and a sub column spacer is formed at the second portion of the first light blocking member. | 12-12-2013 |