Patent application number | Description | Published |
20140024536 | APPARATUS AND METHODS FOR HIGH-THROUGHPUT SEQUENCING - The invention provides methods, apparatuses, and compositions for high-throughput amplification sequencing of specific target sequences in one or more samples. In some aspects, barcode-tagged polynucleotides are sequenced simultaneously and sample sources are identified on the basis of barcode sequences. In some aspects, sequencing data are used to determine one or more genotypes at one or more loci comprising a causal genetic variant. | 01-23-2014 |
20140024541 | METHODS AND COMPOSITIONS FOR HIGH-THROUGHPUT SEQUENCING - The invention provides methods, apparatuses, and compositions for high-throughput amplification sequencing of specific target sequences in one or more samples. In some aspects, barcode-tagged polynucleotides are sequenced simultaneously and sample sources are identified on the basis of barcode sequences. In some aspects, sequencing data are used to determine one or more genotypes at one or more loci comprising a causal genetic variant. | 01-23-2014 |
20140024542 | METHODS AND COMPOSITIONS FOR ENRICHMENT OF TARGET POLYNUCLEOTIDES - The invention provides methods, apparatuses, and compositions for high-throughput amplification sequencing of specific target sequences in one or more samples. In some aspects, barcode-tagged polynucleotides are sequenced simultaneously and sample sources are identified on the basis of barcode sequences. In some aspects, sequencing data are used to determine one or more genotypes at one or more loci comprising a causal genetic variant. | 01-23-2014 |
20140121116 | System and Methods for Detecting Genetic Variation - The invention provides methods, apparatuses, and compositions for high-throughput amplification sequencing of specific target sequences in one or more samples. In some aspects, barcode-tagged polynucleotides are sequenced simultaneously and sample sources are identified on the basis of barcode sequences. In some aspects, sequencing data are used to determine one or more genotypes at one or more loci comprising a causal genetic variant. In some aspects, systems and methods of detecting genetic variation are provided. | 05-01-2014 |
20140162278 | METHODS AND COMPOSITIONS FOR ENRICHMENT OF TARGET POLYNUCLEOTIDES - The invention provides methods, apparatuses, and compositions for high-throughput amplification sequencing of specific target sequences in one or more samples. In some aspects, barcode-tagged polynucleotides are sequenced simultaneously and sample sources are identified on the basis of barcode sequences. In some aspects, sequencing data are used to determine one or more genotypes at one or more loci comprising a causal genetic variant. | 06-12-2014 |
20140342354 | SYSTEMS AND METHODS FOR PRENATAL GENETIC ANALYSIS - The present disclosure provides for compositions and methods for the testing and analysis of genetic alterations of a sample comprising maternal and fetal polynucleotides. Generally, the composition and methods of this disclosure provide for the isolation of a mixture of maternal and fetal polynucleotides from a sample, generally from the mother. Polynucleotides are isolated and purified and further tested to determine the presence or absence of genetic alterations, such as copy number variation, or causal variants at one or more loci in the sample. | 11-20-2014 |
20150205914 | System and Methods for Detecting Genetic Variation - The invention provides methods, apparatuses, and compositions for high-throughput amplification sequencing of specific target sequences in one or more samples. In some aspects, barcode-tagged polynucleotides are sequenced simultaneously and sample sources are identified on the basis of barcode sequences. In some aspects, sequencing data are used to determine one or more genotypes at one or more loci comprising a causal genetic variant. In some aspects, systems and methods of detecting genetic variation are provided. | 07-23-2015 |
Patent application number | Description | Published |
20100293523 | Development environment configured to generate application source code from database objects - Development tools are disclosed that connect various artifacts in a database aware fashion. For example, the development environment may integrate SQL query builders across multiple application development interfaces (e.g., a source code editor, XML editor, database scripting tools, etc.), significantly improving developer productivity, reducing development cost and time. Thus, the process of consuming heterogeneous artifacts in an application (or creating them for consumption) becomes a very productive experience, eliminating the need to manually cut/paste information in multiple project files in many cases. | 11-18-2010 |
20100293524 | DEVELOPMENT ENVIRONMENT FOR MANAGING DATABASE AWARE SOFTWARE PROJECTS - Embodiments of the invention introduce development tools that connect various artifacts in a database aware fashion. For example, embodiments of the invention integrate SQL query builders across multiple application development interfaces (e.g., a source code editor, XML editor, database scripting tools, etc.), significantly improving developer productivity, reducing development cost and time. Thus, the process of consuming heterogeneous artifacts in an application (or creating them for consumption) becomes a very productive experience, eliminating the need to manually cut/paste information in multiple project files in many cases. | 11-18-2010 |
20120151436 | DEVELOPMENT ENVIRONMENT FOR MANAGING DATABASE AWARE SOFTWARE PROJECTS - Embodiments of the invention introduce development tools that connect various artifacts in a database aware fashion. For example, embodiments of the invention integrate SQL query builders across multiple application development interfaces (e.g., a source code editor, XML editor, database scripting tools, etc.), significantly improving developer productivity, reducing development cost and time. Thus, the process of consuming heterogeneous artifacts in an application (or creating them for consumption) becomes a very productive experience, eliminating the need to manually cut/paste information in multiple project files in many cases. | 06-14-2012 |
20120159432 | DEVELOPMENT ENVIRONMENT CONFIGURED TO GENERATE APPLICATION SOURCE CODE FROM DATABASE OBJECTS - Development tools are disclosed that connect various artifacts in a database aware fashion. For example, the development environment may integrate SQL query builders across multiple application development interfaces (e.g., a source code editor, XML editor, database scripting tools, etc.), significantly improving developer productivity, reducing development cost and time. Thus, the process of consuming heterogeneous artifacts in an application (or creating them for consumption) becomes a very productive experience, eliminating the need to manually cut/paste information in multiple project files in many cases. | 06-21-2012 |
Patent application number | Description | Published |
20080268171 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION - Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern. | 10-30-2008 |
20090078916 | TANTALUM CARBIDE NITRIDE MATERIALS BY VAPOR DEPOSITION PROCESSES - Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaC | 03-26-2009 |
20090081868 | VAPOR DEPOSITION PROCESSES FOR TANTALUM CARBIDE NITRIDE MATERIALS - Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater. | 03-26-2009 |
20090084317 | ATOMIC LAYER DEPOSITION CHAMBER AND COMPONENTS - An atomic layer deposition chamber comprises a gas distributor comprising a central cap having a conical passageway between a gas inlet and gas outlet. The gas distributor also has a ceiling plate comprising first and second conical apertures that are connected. The first conical aperture receives a process gas from the gas outlet of the central cap. The second conical aperture extends radially outwardly from the first conical aperture. The gas distributor also has a peripheral ledge that rests on a sidewall of the chamber. | 04-02-2009 |
20090314370 | CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD - Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line. | 12-24-2009 |
20100006167 | CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD - Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. | 01-14-2010 |
20100129535 | Vapor Deposition Processes for Tantalum Carbide Nitride Materials - Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater. | 05-27-2010 |
20110124192 | PROCESS FOR FORMING COBALT-CONTAINING MATERIALS - Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material. | 05-26-2011 |
20110209660 | METHODS AND APPARATUS FOR DEPOSITION PROCESSES - Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed. | 09-01-2011 |
20120264291 | PROCESS FOR FORMING COBALT-CONTAINING MATERIALS - Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material. | 10-18-2012 |
20120315756 | PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED - Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide. | 12-13-2012 |
20150340266 | THERMAL PROCESSING SUSCEPTOR - In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim. | 11-26-2015 |
20150368829 | SUBSTRATE THERMAL CONTROL IN AN EPI CHAMBER - In one embodiment, a susceptor for a thermal processing chamber is provided. The susceptor includes a base having a front side and a back side made of a thermally conductive material opposite the front side, wherein the base includes a peripheral region surrounding a recessed area having a thickness that is less than a thickness of the peripheral region, and a plurality of raised features protruding from one or both of the front side and the back side. | 12-24-2015 |