Chu
Anh Tuan Chu, Ludwigshafen DE
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20120156409 | HOUSING MADE OF FIBER-REINFORCED PLASTIC - Plastic housings that are subjected to internal pressure and comprise a housing upper part, a housing lower part and a closure which connects both parts to one another. At the connecting point, the housing upper and lower part have a plurality of comb-like retaining columns shaped in a complementary manner with respect to one another such that the housing parts can be plugged together. The retaining columns are oriented in a direction in which tensile force between the housing upper part and the housing lower part is oriented when the housing is subjected to internal pressure. Retaining grooves which are oriented transversely to the effective direction of the tensile force are formed in two opposite surfaces of the retaining columns in each case. Retaining bodies which at least partially touch the areas formed by the retaining grooves and thus establish the connection can be introduced into the retaining grooves. | 06-21-2012 |
Bo-Han Chu, New Taipei City TW
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20120182230 | SENSING STRUCTURE OF TOUCH PANEL - A sensing structure of a touch panel includes a substrate, a plurality of sensing electrodes, a plurality of electro static discharge (ESD) protection electrodes, a plurality of first bridges, and a passivation layer. The sensing electrodes, the ESD protection electrodes, and the first bridges are disposed on the substrate. The passivation layer is disposed between the sensing electrode and the first bridge, and disposed between the ESD protection electrode and the first bridge. The passivation layer has a plurality of contact holes, and at least one sensing electrode is electrically connected to the ESD protection electrode via the contact hole and the first bridge. | 07-19-2012 |
20130271388 | TOUCH SENSING THREE-DIMENSIONAL DISPLAY DEVICE - A touch sensing three-dimensional (3D) display device includes a display panel and a touch sensing parallax integrated panel. The touch sensing parallax integrated panel located on the display panel includes a first substrate, a second substrate, a touch sensing structure, a display medium layer, a first parallax electrode layer, and a second parallax electrode layer. The second substrate is disposed opposite to the first substrate. The first substrate is located between the display panel and the second substrate. The touch sensing structure is located on the second substrate. The display medium layer is disposed between the first substrate and the second substrate. The first parallax electrode layer disposed on the first substrate is located between the display medium layer and the first substrate. The second parallax electrode layer disposed on the second substrate is located between the display medium layer and the second substrate. | 10-17-2013 |
20140291803 | CAPACITOR STRUCTURE OF GATE DRIVER IN PANEL - A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on the first dielectric layer and coupled to the first metal layer. The second dielectric layer covers the second metal layer. The first transparent capacitor electrode layer is disposed on the first dielectric layer and connected to the second metal layer. The second transparent capacitor electrode layer is disposed on the second dielectric layer and coupled to the first metal layer, in which the second and first transparent capacitor electrode layers are arranged to be stacked in a thickness direction and mutually opposed across the second dielectric layer therebetween. | 10-02-2014 |
Brian Chu, Gloucestershire GB
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20110084222 | VALVE ELEMENT FOR A CONDENSATE TRAP - There is provided a valve element for a condensate trap comprising an expansion chamber in the form of a metallic bellows having a variable axial length and having first and second ends sealed with first and second end caps respectively. A valve closure member is provided on the second end cap and is arranged to cooperate with a valve seat. A first guide member is coupled to the first end cap and axially extends into the bellows and a second guide member is coupled to the second end cap, axially extends into the bellows and cooperates with the first guide member. This allows relative axial movement between the first and second end caps but restricts relative radial movement between the first and second end caps. This helps to ensure that the valve closure member properly seats on the valve seal. | 04-14-2011 |
Changhsin Chu, Tainan TW
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20120043571 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method fro manufacturing the same. The LED structure includes a substrate, an illuminant epitaxial structure, first conductivity type and second conductivity type contact layers, a transparent insulating layer, first and second reflective layers, first and second barrier layers, and first conductivity type and second conductivity type electrodes. | 02-23-2012 |
Chang Hsin Chu, Tainan TW
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20120056152 | LIGHT EMITTING DEVICES - In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other. | 03-08-2012 |
20120305959 | LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer. | 12-06-2012 |
20130049060 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode structure. In one embodiment, the light-emitting diode structure includes an insulation substrate, a light-emitting structure having a first electrical semiconductor layer, a light-emitting layer, and a second electrical semiconductor layer successively stacked on the insulating substrate and containing a first electrode pad region, a second electrode pad region, and a light-emitting region, a first and second electrical electrode pad respectively disposed on the first and second electrode pad region, a second electrical conducting finger disposed on the light-emitting structure and connected to the second electrical electrode pad and the second electrical semiconductor layer, and a first insulating layer for insulating the second electrical conducting finger from the first electrical semiconductor layer and the light-emitting layer. A bottom surface of the second electrical electrode pad is located below an upper surface of the second electrical semiconductor layer. | 02-28-2013 |
20130292718 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure comprises an insulating substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked in sequence on a surface of the insulating substrate. Each LED chip includes a mesa structure, an exposed portion of the first conductivity type semiconductor layer adjacent to the mesa structure, and a first isolation trench. The first isolation trench is disposed in the mesa structure. The interconnection layers respectively connect neighboring two of the LED chips. | 11-07-2013 |
20130292719 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure includes an insulation substrate; LED chips each includes an epitaxial layer having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on the insulation substrate, and comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, and a first isolation trench within the mesa structure; interconnection layers connect the LED chips; electrode pads respectively connected to exposed portions of the semiconductor layers; a reflective insulating layer covering the interconnection layers, the mesa structures and the electrode pads, and having penetration holes respectively exposing a portion of the electrode pads; and bonding pads located on a portion of the reflective insulating layer and connected to the electrode pads through the penetrating holes. A method of manufacturing the LED structure. | 11-07-2013 |
20130299863 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An LED structure include a substrate, a light-emitting structure disposed on the substrate, at least one surface plasmon (SP) structure, and a first and a second electrodes. The light-emitting structure has a first electrical type semiconductor layer, an active layer, a second electrical type semiconductor layer, and a first conductive layer sequentially stacked. The active layer is located at a first portion of the first electrical type semiconductor layer and exposed from a second portion of the first electrical type semiconductor layer. The first and the second electrical type semiconductor layer have different electrical types. The SP structure is concavely disposed in the first conductive layer and the second electrical type semiconductor layer. The first and the second electrodes are disposed on the second portion of the first electrical type semiconductor layer and the first conductive layer, respectively. A method for manufacturing the above LED structure. | 11-14-2013 |
20140034976 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the same. The LED structure includes an insulation substrate, a plurality of LED chips and a plurality of interconnection layers. Each LED chip includes an epitaxial layer and a dielectric layer stacked on a surface of the insulation substrate in sequence. Each LED chip is formed with a first conductivity type contact hole and a second conductivity type contact hole penetrating the dielectric layer, and a first isolation trench disposed in the epitaxial layer and between the second conductivity type contact hole of the LED chip and the first conductivity type contact hole of the neighboring LED chip. Each interconnection layer extends from the second conductivity type contact hole of each LED chip to the first conductivity type contact hole of the neighboring LED chip by passing over the first isolation trench to electrically connect the LED chips. | 02-06-2014 |
Chao-Chieh Chu, Hsinchu City 300 TW
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20130029109 | CONDUCTIVE FILM - The present invention discloses a conductive film including a substrate, a reflective index adjusting structure, and a transparent conductive layer. The reflective index adjusting structure may be disposed on the substrate, and the transparent conductive layer may be disposed on the reflective index adjusting structure, which may be disposed between the transparent conductive layer and the substrate. The transparent conductive layer may cover parts of the reflective index adjusting structure. When a light enters into the transparent conductive layer/the reflective index adjusting structure of the conductive film with an incident angle, the light may be associated with a first reflectance/a second reflectance. The difference between the first reflectance and the second reflectance is designed to be lower than a first threshold value. Accordingly, the present invention may eliminate the display difference between an etched and a non-etched area of the conductive film and improve the visual quality. | 01-31-2013 |
Chaokang Chu, Hockessin, DE US
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20130035665 | Polymer-Based Occlusion Devices, Systems and Methods - A method of occluding includes imbibing a porous elongate element comprised of ePTFE with a calcium-containing solution. The method also includes delivering, via a delivery catheter, the calcium-imbibed porous elongate element to a target occlusion site. The method further includes administering, after the calcium-imbibed porous elongate element has been completely delivered to the target occlusion site and resides entirely within a volume defined by the target occlusion site, an alginate-containing solution to the target occlusion site. | 02-07-2013 |
Che-Min Chu, Xinzhuang City TW
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20110223736 | LDD Epitaxy for FinFETs - A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET. | 09-15-2011 |
Chengcai Chu, Gatersleben DE
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20090144858 | GENETIC METHOD - The present invention describes a method of increasing plan yield. Also described are DNA constructs comprising DNA sequences coding for proteins involved in sucrose transport, metabolism and uptake operably linked to controllable promoter regions and plants transformed with said constructs. More particularly a method for the controlled production of said proteins resulting in an alteration in plant growth characteristics, flowering time and in yield is described. | 06-04-2009 |
Cheng-Chih Chu, Chung Li City TW
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20130016496 | Appropriate LED Arrangement And Power Need In Large-Scale LED Display And Lighting Apparatus And Method ThereofAANM Hsieh; Guan-ChyunAACI Chung Li CityAACO TWAAGP Hsieh; Guan-Chyun Chung Li City TWAANM Chu; Cheng-ChihAACI Chung Li CityAACO TWAAGP Chu; Cheng-Chih Chung Li City TW - Method for managing power of a display and apparatus thereof are provided. The proposed method includes the following steps: calculating a most appropriating voltage value and a most appropriating current value form a plurality of LEDs; and obtaining a first optimal working point according to the most appropriating voltage value and the most appropriating current value, wherein the first optimal working point is used for arranging the plurality of LEDs. | 01-17-2013 |
Cheng-Kun Chu, Tu-Chen City TW
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20120025410 | APPARATUS AND METHOD FOR FABRICATING THREE-DIMENSIONAL NONWOVEN FABRIC STRUCTURE - An apparatus for fabricating three-dimensional nonwoven fabric structure is disclosed, which includes an adjustable frame, a three-dimensional mold, a rotary shaft connecting the three-dimensional mold and the adjustable frame, and a meltblown device. The three-dimensional mold is rotated relative to the adjustable frame. The meltblown device has plural nozzles for spinning a plurality of fibers, wherein the three-dimensional mold is rotated in front of the nozzles to select the fibers, and a three-dimensional nonwoven fabric structure is formed on the three-dimensional mold. | 02-02-2012 |
Chen-Nan Chu, Kuan Yin Hsiang TW
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20120183414 | COMPRESSOR OVERLOAD PROTECTION DEVICE - A compressor overload protection device utilizes a first electrode of an electric connector to electrically connect a first OLP overload protection loop that is electrically connected to a first power line of an external power source. In addition, a second OLP overload protection loop is connected to a second electrode and a third electrode of the electric connector, and a capacitor is electrically connected between the third electrode and the first electrode. When the operation of the compressor is overloaded, the first and second OLP overload protection loop can provide proper protection mechanism with respect to the first power line and the second power line to prevent a motor of the compressor from being overheated and damaged, and the electrodes of the electric connector can be effectively prevented from exploding. | 07-19-2012 |
20130088113 | MOTOR HAVING MORE MAGNETS ON EFFECTIVE AREA OF THE ROTOR THEREOF - A motor having more magnets on effective area of the rotor includes a stator, a rotor and a rotation shaft, the rotor has a plurality number of rotor magnetic poles, a magnet is installed inside each of rotor magnetic pole, and a concave arc is on the outer side of each magnet and forms the first, the second and the third surfaces near inside of each magnet. The concave arc connects to the first and the third surfaces with a connecting plan respectively, each connecting plan nears the periphery surface of the rotor. The motor has more magnets on the effective area of the rotor for higher motor efficiency. | 04-11-2013 |
Chia-Hua Chu, Zhubei City TW
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20120025389 | Hermetic Wafer Level Packaging - Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum-based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers. | 02-02-2012 |
20120043626 | MICROSTRUCTURE DEVICE WITH AN IMPROVED ANCHOR - The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity. | 02-23-2012 |
20120061776 | WAFER LEVEL PACKAGING - A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer. | 03-15-2012 |
20120068276 | MICROSTRUCTURE WITH AN ENHANCED ANCHOR - The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer formed on the buried oxide layer. A top oxide layer is formed on the device layer. The top oxide layer, the device layer, and the buried oxide layer are etched, thereby forming trenches to create an anchor and a microstructure device in the device layer. In process of fabricating the device, a thermal oxide layer is formed along sides of the microstructure device to enclose the microstructure device in the buried oxide layer, the top oxide layer and the thermal oxide layer. Then, a poly layer if formed to fill in the trenches and enclose the anchor. After the poly layer fills in the trenches, the oxide layers enclosing the microstructure device are etched away, releasing the microstructure device. | 03-22-2012 |
20120074590 | MULTIPLE BONDING IN WAFER LEVEL PACKAGING - The present disclosure provides a method for fabricating a MEMS device including multiple bonding of substrates. In an embodiment, a method includes providing a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, providing a semiconductor substrate including a second bonding layer, and providing a cap including a third bonding layer. The method further includes bonding the MEMS substrate to the semiconductor substrate at the first and second bonding layers, and bonding the cap to the semiconductor substrate at the second and third bonding layers to hermetically seal the MEMS substrate between the cap and the semiconductor substrate. A MEMS device fabricated by the above method is also provided. | 03-29-2012 |
20120098074 | MEMS DEVICE WITH RELEASE APERTURE - The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided. | 04-26-2012 |
20120125747 | MEMS SWITCH WITH REDUCED DIELECTRIC CHARGING EFFECT - The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed. | 05-24-2012 |
20120161582 | MEMS KINETIC ENERGY CONVERSION - The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops. | 06-28-2012 |
20120181637 | BULK SILICON MOVING MEMBER WITH DIMPLE - A method for forming a semiconductor device includes forming a substrate, forming a moveable member of bulk silicon and forming a first dimple structure on a first surface of the moveable member, where the first surface faces the substrate. | 07-19-2012 |
20120187983 | FREQUENCY GENERATOR - A mechanical frequency generator has a first mechanical resonator and a second mechanical resonator and a circuit connected with the first and second mechanical resonators. The first and second mechanical resonators having substantially the same resonator frequency coefficients as a function of an environment of the first and the second mechanical resonators. The first mechanical resonator differing in size from the second mechanical resonator. The circuit adapted to generate a difference frequency signal responsive to the first and second mechanical resonator frequency signals and based on the first and the second predetermined resonant frequencies. | 07-26-2012 |
20120261830 | MEMS DEVICE ETCH STOP - The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer. | 10-18-2012 |
20120309197 | METHODS OF FORMING SEMICONDUCTOR STRUCTURES - A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed. | 12-06-2012 |
20120313235 | Semiconductor Devices With Moving Members and Methods for Making the Same - The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is configured as an anti-stiction bump; a MEMS device configured on the MEMS substrate and electrically coupled with the first conductive plug; and a cap substrate bonded to the MEMS substrate such that the MEMS device is enclosed therebetween. | 12-13-2012 |
20130015743 | MEMS Structure And Method Of Forming Same - A microelectromechanical system (MEMS) device that reduces or eliminates stiction includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. A protrusion extends from the substrate and is configured to contact the movable element when the moving element moves in the at least one degree of freedom. The protrusion comprises a surface having a low surface energy relative a silicon oxide surface. The protrusion may be coupled to a voltage potential node to avoid or counteract electrostatic forces. | 01-17-2013 |
20130043547 | MEMS DEVICE HAVING CHIP SCALE PACKAGING - A method and device having chip scale MEMS packaging is described. A first substrate includes a MEMS device and a second substrate includes an integrated circuit. The frontside of the first substrate is bonded to the backside of the second substrate. Thus, the second substrate provides a cavity to encase, protect or operate the MEMS device within. The bond may provide an electrical connection between the first and second substrate. In an embodiment, a through silicon via is used to carry the signals from the first substrate to an I/O connection on the frontside of the second substrate. | 02-21-2013 |
20130075834 | Bulk Silicon Moving Member with Dimple - A method for forming a semiconductor device includes forming a substrate, forming a moveable member of bulk silicon and forming a first dimple structure on a first surface of the moveable member, where the first surface faces the substrate. | 03-28-2013 |
20130102101 | Wafer Level Packaging - A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer. | 04-25-2013 |
20130105868 | CMOS COMPATIBLE BIOFET | 05-02-2013 |
20130126989 | Microstructure Device with an Improved Anchor - A microelectromechanical system (MEMS) device includes a substrate and an oxide layer formed on the substrate. A cavity is etched in the oxide layer. A microstructure device layer is bonded to the oxide layer, over the cavity. The microstructure device layer includes a substantially solid microstructure MEMS device formed in the microstructure device layer and suspended over a portion of the cavity. An anchor is formed in the device layer and configured to support the microstructure device, the anchor having an undercut in the oxide layer. The undercut has a length along the anchor that is less than one-half a length of an outer boundary dimension of the microstructure MEMS device. | 05-23-2013 |
20130140653 | MEMS DEVICE ETCH STOP - The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer. | 06-06-2013 |
20130147317 | MEMS KINETIC ENERGY CONVERSION - The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, a piezoelectric element over the MEMS movable structure, and a magnet disposed over the plurality of metal loops. The MEMS movable structure, the plurality of metal loops, and the piezoelectric element are encapsulated. | 06-13-2013 |
20130168852 | MEMS Devices and Methods of Forming Same - A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches. | 07-04-2013 |
20130193527 | MICRO-ELECTRO MECHANICAL SYSTEM (MEMS) STRUCTURES WITH THROUGH SUBSTRATE VIAS AND METHODS OF FORMING THE SAME - The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures. | 08-01-2013 |
20130264610 | TEMPERATURE STABILITIZED MEMS - A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops. | 10-10-2013 |
20130285170 | MULTIPLE BONDING IN WAFER LEVEL PACKAGING - A MEMS device is described. The device includes a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, a semiconductor substrate including a second bonding layer, and a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer. The first bonding layer includes silicon, the semiconductor substrate is electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate. | 10-31-2013 |
20130334620 | MEMS Devices and Fabrication Methods Thereof - A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate. | 12-19-2013 |
20140035158 | Integrated Semiconductor Device and Wafer Level Method of Fabricating the Same - The present disclosure provides one embodiment of a stacked semiconductor device. The stacked semiconductor device includes a first substrate; a first bond pad over the first substrate; a second substrate including a second electrical device fabricated thereon; a second bond pad over the second electrical device over the second substrate, the second bond pad electrically connecting to the second electrical device; a second insulation layer over the second bond pad having a top surface, the second insulation layer being bonded toward the first bond pad of the first substrate; and a through-substrate-via (“TSV”) extending from a surface opposite to the first bond pad through the first substrate and through the top surface of the second insulation layer to the second bond pad. | 02-06-2014 |
20140042562 | MEMS Devices and Methods for Forming the Same - A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion. | 02-13-2014 |
20140054461 | LIGHT DETECTOR WITH GE FILM - A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor. | 02-27-2014 |
20140103461 | MEMS Devices and Fabrication Methods Thereof - A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate. | 04-17-2014 |
20140151821 | MEMS STRUCTURE WITH ADAPTABLE INTER-SUBSTRATE BOND - A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor. | 06-05-2014 |
20140154841 | Hermetic Wafer Level Packaging - Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum-based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers. | 06-05-2014 |
20140183611 | METHOD TO INTEGRATE DIFFERENT FUNCTION DEVICES FABRICATED BY DIFFERENT PROCESS TECHNOLOGIES - The present disclosure is directed to an apparatus and method for manufacture thereof. The apparatus includes a first passive substrate bonded to a second active substrate by a conductive metal interface. The conductive metal interface allows for integration of different function devices at a wafer level. | 07-03-2014 |
20140206123 | Dual Layer Microelectromechanical Systems Device and Method of Manufacturing Same - Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device. | 07-24-2014 |
20140252358 | Methods and Apparatus for MEMS Devices with Increased Sensitivity - Methods and apparatus for forming MEMS devices. An apparatus includes at least a portion of a semiconductor substrate having a first thickness and patterned to form a moveable mass; a moving sense electrode forming the first plate of a first capacitance; at least one anchor patterned from the semiconductor substrate and having a portion that forms the second plate of the first capacitance and spaced by a first gap from the first plate; a layer of semiconductor material of a second thickness patterned to form a first electrode forming a first plate of a second capacitance and further patterned to form a second electrode overlying the at least one anchor and forming a second plate spaced by a second gap that is less than the first gap; wherein a total capacitance is formed that is the sum of the first capacitance and the second capacitance. Methods are disclosed. | 09-11-2014 |
20140264474 | STACKED SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME RELATED CASES - A stacked semiconductor device includes a CMOS device and a MEMS device. The CMOS device includes a multilayer interconnect with metal elements disposed over the multilayer interconnect. The MEMS device includes metal sections with a first dielectric layer disposed over the metal sections. A cavity in the first dielectric layer exposes portions of the metal sections. A dielectric stop layer is disposed at least over the interior surface of the cavity. A movable structure is disposed over a front surface of the first dielectric layer and suspending over the cavity. The movable structure includes a second dielectric layer over the front surface of the first dielectric layer and suspending over the cavity, metal features over the second dielectric layer, and a flexible dielectric membrane over the metal features. The CMOS device is bonded to the MEMS device with the metal elements toward the flexible dielectric membrane. | 09-18-2014 |
20140264648 | MEMS Integrated Pressure Sensor Devices and Methods of Forming Same - A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment. | 09-18-2014 |
20140264653 | MEMS Pressure Sensor and Microphone Devices Having Through-Vias and Methods of Forming Same - A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer. | 09-18-2014 |
20140264661 | MEMS Devices and Methods for Forming Same - Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure. | 09-18-2014 |
20140264662 | MEMS Integrated Pressure Sensor and Microphone Devices and Methods of Forming Same - A method embodiment for forming a micro-electromechanical (MEMS) device includes providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer, and the carrier wafer is etched to expose the first membrane for the microphone device to an ambient environment. A MEMS substrate is patterned and portions of a first sacrificial layer are removed of the MEMS wafer to form a MEMS structure. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure. A second sealed cavity and a cavity exposed to an ambient environment on opposing sides of the second membrane for the pressure sensor device are formed. | 09-18-2014 |
20140264744 | STACKED SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A stacked semiconductor device includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. The cavity has an interior surface. A stop layer is disposed over the interior surface of the cavity. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units. | 09-18-2014 |
20140270272 | Structure and Method for Integrated Microphone - The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate; a silicon oxide layer formed on one side of the first silicon substrate; a second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates; and a diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates, wherein the first plate and the diaphragm are configured to form a capacitive microphone. | 09-18-2014 |
20140273281 | METHOD FOR FORMING BIOCHIPS AND BIOCHIPS WITH NON-ORGANIC LANDINGS FOR IMPROVED THERMAL BUDGET - The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates. | 09-18-2014 |
20140319631 | MEMS Integrated Pressure Sensor Devices having Isotropic Cavities and Methods of Forming Same - A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure. | 10-30-2014 |
20140353776 | MEMS Structure with Adaptable Inter-Substrate Bond - A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor. | 12-04-2014 |
20150060954 | CMOS-MEMS Integrated Flow for Making a Pressure Sensitive Transducer - A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device. | 03-05-2015 |
20150061046 | WAFER LEVEL METHOD OF SEALING DIFFERENT PRESSURE LEVELS FOR MEMS SENSORS - The present disclosure relates to a method of forming a plurality of MEMs device having a plurality of chambers with different pressures on a substrate, and an associated apparatus. In some embodiments, the method is performed by providing a device wafer having a plurality of microelectromechanical system (MEMs) devices. A cap wafer is bonded onto the device wafer in a first ambient environment having a first pressure. The bonding forms a plurality of chambers abutting the plurality of MEMs devices, which are held at the first pressure. One or more openings are formed in one or more of the plurality of chambers. The one or more openings in the one or more of the plurality of chambers are then sealed in a different ambient environment having a different pressure, thereby causing the one or more of the plurality of chambers to be held at the different pressure. | 03-05-2015 |
20150076710 | INTEGRATED SEMICONDUCTOR DEVICE AND WAFER LEVEL METHOD OF FABRICATING THE SAME - The present disclosure provides one embodiment of a stacked semiconductor device. The stacked semiconductor device includes a first substrate; a first bond pad over the first substrate; a second substrate including a second electrical device fabricated thereon; a second bond pad over the second electrical device over the second substrate, the second bond pad electrically connecting to the second electrical device; a second insulation layer over the second bond pad having a top surface, the second insulation layer being bonded toward the first bond pad of the first substrate; and a through-substrate-via (“TSV”) extending from a surface opposite to the first bond pad through the first substrate and through the top surface of the second insulation layer to the second bond pad. | 03-19-2015 |
Chien-Wen Chu, Yangmei Township TW
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20120326261 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric sidewall and a second dielectric sidewall opposite to each other. The dielectric structure includes a first dielectric portion and a second dielectric portion, between the first dielectric sidewall and the second dielectric sidewall. The first doped layer is on the well region between the first dielectric portion and the second dielectric portion. The second doped layer is on the first doped layer. The first doped region is in the well region on the first dielectric sidewall. | 12-27-2012 |
20130056824 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device and a manufacturing method for the same are provided. The semiconductor device comprises a first doped region, a second doped region, a dielectric structure and a gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity and is adjacent to the first doped region. The dielectric structure comprises a first dielectric portion and a second dielectric portion separated from each other. The dielectric structure is formed on the first doped region. The gate structure is on a part of the first doped region or second doped region adjacent to the first dielectric portion. | 03-07-2013 |
20130249007 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a first source/drain region, a second source/drain region, a first stack structure and a second stack structure. The first source/drain region is formed in the substrate. The second source/drain region is formed in the substrate. The first stack structure is on the substrate between the first source/drain region and the second source/drain region. The first stack structure comprises a first dielectric layer and a first conductive layer on the first dielectric layer. The second stack structure is on the first stack structure. The second stack structure comprises a second dielectric layer and a second conductive layer on the second dielectric layer. | 09-26-2013 |
20130277805 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor structure includes a substrate, a first well having a first conductive type, a second well having a second conductive type, a body region, a first doped region, a second doped region, a third doped region and a field plate. The first and second wells are formed in the substrate. The body region is formed in the second well. The first and second doped regions are formed in the first well and the body region, respectively. The second and first doped regions have the same polarities, and the dopant concentration of the second doped region is higher than that of the first doped region. The third doped region is formed in the second well and located between the first and second doped regions. The third and first doped regions have reverse polarities. The field plate is formed on the surface region between the first and second doped regions. | 10-24-2013 |
20130328170 | SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF AND OPERATING METHOD THEREOF - A semiconductor element, a manufacturing method thereof and an operating method thereof are provided. The semiconductor element includes a substrate, a first well, a second well, a third well, a fourth well, a bottom layer, a first heavily doping region, a second heavily doping region, a third heavily doping region and a field plane. The first well, the bottom layer and the second well surround the third well for floating the third well and the substrate. The first, the second and the third heavily doping regions are disposed in the first, the second and the third wells respectively. The field plate is disposed above a junction between the first well and the fourth well. | 12-12-2013 |
Chien-Wen Chu, Taoyuan TW
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20120126323 | SEMICONDUCTOR DEVICE HAVING A SPLIT GATE AND A SUPER-JUNCTION STRUCTURE - A semiconductor device comprises a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A super-junction structure is disposed within the drift region between the gate and the drain region. | 05-24-2012 |
Chin-Chieh Chu, Taichung County TW
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20110283782 | BALL MOVEMENT PATH MEASURING METHOD - A ball movement path measuring method includes the steps of: preparing an operating unit and a measurement unit, mounting the triaxial accelerometer in the object to be measured for enabling the triaxial accelerometer to define XYZ triaxial space coordinates, obtaining the data of a initial position of the XYZ axes at a first measuring time and the data of a reference position of the XYZ axes at a second measuring time and transmitting the obtained data to the operating unit, and comparing the reference position to the initial position and calculating the XYZ acceleration data, XYZ vector components of force and torsion force relative to each of XYZ axes after receipt of force subject to the contained angle between the coordinates data of the reference position and the coordinate data of the initial position and then using the XYZ acceleration data and the data of the weight and size of the object to calculate the force experienced by the object, initial velocity, flight duration, flight height, flight distance and/or rotation speed. | 11-24-2011 |
20110287871 | BALL GAME TRAINING APPARATUS - A ball game training apparatus includes a positioning device, a first pivot device connected to the positioning device and turnable relative to the positioning device in X-axis direction, a second pivot device connected to the first pivot device and turnable relative to the first pivot device in Y-axis direction, and a driven device connected to the second pivot device and turnable relative to the second pivot device and having a force-receiving ball disposed remote from the second pivot device and strikable to move by an external force. | 11-24-2011 |
Ching-Yu Chu, New Taipei City TW
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20120037770 | FIXING MECHANISM FOR FIXING A DISPLAY DEVICE - A fixing mechanism for fixing a display device includes a display casing whereon a hole is formed, a shielding wall connected to a side of the display casing, and a bracket wedged inside the shielding wall in a detachable manner and installed on the side of the display casing. An opening is formed on the bracket. The fixing mechanism further includes a screwing component. An end of the screwing component passes through the hole on the display casing and is screwed inside the opening on the bracket. The other end of the screwing component is installed inside a wall mount. The shielding wall is for shielding the end of the screwing component. | 02-16-2012 |
Chin-Hui Chu, Taichung City TW
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20120318106 | WRENCH WITH A QUICKLY ROTATABLE DRIVING HEAD - A wrench with a quick rotatable driving head includes a handle, a driving head and a quick-disengaging unit. The quick-disengaging unit is composed of a fixing member secured with the driving head, an operating member inserted through the handle and fitted around the fixing member, and a restraining element transversely provided between the fixing member and the operating member and the handle. The handle and the driving head can be separated by the quick-disengaging unit so that the driving head, with the quick-disengaging unit acting as a pivot, can quickly screw or unscrew a thread locking member, and the operating member can be restrictedly positioned on the fixing member by the restraining element, able to prevent the handle and the driving head from separating. | 12-20-2012 |
Chin-Sheng Chu, Shulin City TW
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20110232032 | Hinge with spacers - A hinge has a pintle, a spacer assembly, a stationary bracket and a rotating bracket. The pintle is mounted through the spacer assembly and is connected to the stationary and rotating brackets. The spacer assembly has multiple spacers stacked with each other. Each spacer has a ring segment and a bearing segment. The ring segment is mounted around the pintle. The bearing segment has an absorbing space to absorb the stress acting on the ring segment. Therefore, the spacer sustains less stress to prevent breakage easily and a lifespan of the spacer is extended. Therefore, the hinge has a longer lifespan. | 09-29-2011 |
20110232034 | Hinge with spacers - A hinge has a pintle, a spacer assembly, a stationary bracket and a rotating bracket. The pintle is mounted through the spacer assembly and is connected to the stationary and rotating brackets. The spacer assembly has multiple spacers stacked with each other. Each spacer has a ring segment and a bearing segment. The ring segment is mounted around the pintle. The bearing segment has an absorbing space to absorb the stress acting on the ring segment. Therefore, the spacer sustains less stress to prevent breakage easily and a lifespan of the spacer is extended. Therefore, the hinge has a longer lifespan. | 09-29-2011 |
Chiou Long Chu, Miaoli TW
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20110180288 | Torque system of power tool - A torque system of a power tool includes a combination of a first body and a second body, in which a toothed ring is assembled; and a mode selecting assembly, a torque adjusting module and control pins disposed on the second body. The torque system further includes restricting mechanisms formed on the second body, and the control pins are respectively disposed in the restricting mechanisms. One side of the control pin has a stopper block, and the restricting mechanism includes a first stopper, a second stopper and a through hole. When the control pin is driven to rotate and the stopper block faces the first stopper or the through hole, the object of switching each operation mode is achieved. | 07-28-2011 |
Chi-Sheng Chu, Sijhih TW
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20110295172 | WOUND DRESSING AND PROCESS FOR PRODUCING THE SAME AND USE THEREOF - A process for producing a wound dressing was provided having steps of: spinning an aqueous stock containing natural polymeric materials into a spin formation solution to form a wet polymeric spin; immersing the wet polymeric fiber into a softening reagent to obtain a softened wet polymeric spin; immersing the softened wet polymeric spin into a volatile reagent to expelling moisture in the softened wet polymeric fiber to form a polymeric fiber; forming a non-woven fabric of the polymeric fiber; and treating the non-woven fabric of the polymeric fiber with a coating solution to form a porous coating on the polymeric fiber to obtain a wound dressing. A process for manufacturing a polymeric fiber is also provided. A wound dressing produced by the process is also provided. | 12-01-2011 |
Chiung Yu Chu, New Taipei City TW
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20130022024 | ROAMING SYSTEM USING WIRELESS ACCESS CONTROLLER TO SELECT ACCESS POINT AND METHOD THEREOF - A roaming system using a wireless access controller to select an access point and the method thereof are provided. By sending a signal strength between a station and access points (AP's) detecting the station from each AP to a wireless access controller (WAC), and notifying the station to select one of the APs to connect according to the signal strength between the station and each AP by the WAC, the system and the method can keep connection quality and transmission efficiency of a station, and achieve the effect of fast roaming. | 01-24-2013 |
Chun-Chi Chu, Jhubei City TW
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20110158108 | ETHERENT PHYSICAL LAYER TEST SYSTEM AND METHOD - An Ethernet physical layer test system and method, wherein a signal pattern generator is utilized to generate repeatedly a signal pattern frame required by the test items of the Ethernet physical layer according to a transmission procedure of a medium access controller; meanwhile, the signal pattern generator generates a control signal for switching a multiplexer, so as to control the transmission of a signal pattern frame. The Ethernet physical layer receives the signal pattern frame and outputs a test packet to a measurement instrument via a twisted-pair, for testing and analyzing quality of signals output by the Ethernet physical layer. Through the application of this Ethernet physical layer test system and method, the time required for testing the Ethernet physical layer can be effectively reduced, thus simplifying the complexity of an algorithm in testing the Ethernet physical layer. | 06-30-2011 |
Chun-Chieh Chu, New Taipei City TW
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20110221558 | COIL OF A TRANSFORMER - A coil of a transformer has two side conducting brackets and at least one middle conducting bracket. The middle conducting bracket is elongated or spiral-shaped and has two terminals respectively connected to the side conducting brackets. The side conducting brackets and the at least one middle conducting bracket of some specific type are connected to form different numbers of loops or different types of circuits (series circuits or parallel circuits). Therefore, design and fabrication of the coil is flexible and materials and manufacturing costs are saved. Moreover, the side conducting brackets and the at least one middle conducting bracket require only two or four soldered joints so number of soldered joints required is limited and efficiency of the transformer is improved. | 09-15-2011 |
Chun-Mi Chu, Zhonghe City TW
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20110229868 | ELECTRONIC CLASS SYSTEM - An electronic class system includes a class certifying unit for certifying a plurality of students of a class, a class information displaying unit for displaying a school name and a grade level of the class, a class student displaying unit for displaying a plurality of student images of the class, and the student images are linked to a student information group; and a class message announcing unit for displaying at least one message title. Therefore, the electronic class system can save expenses of students and allows the students to update their correspondence data and keep in contact with each other anytime. | 09-22-2011 |
20110231232 | ELECTRONIC ADVERTISING SYSTEM - An electronic advertising system includes an advertising figure, and the electronic advertising system processes the advertising figure to form a first predetermined quantity of advertising blocks and repeatedly form a second predetermined quantity of advertising blocks from the first quantity of advertising blocks respectively, and the electronic advertising system provides the second predetermined quantity of advertising units, and each advertising unit has he first predetermined quantity of same advertising blocks, the first predetermined quantity of different advertising blocks, or the first predetermined quantity of partially same and partially different advertising blocks. Therefore the electronic advertising system can improve the advertising effect of the advertising figure by the plurality of advertising units. | 09-22-2011 |
Daniel J. Chu, Folsom, CA US
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20130010517 | SELF-DISABLING CHIP ENABLE INPUT - A multi-die memory package may have separate chip enable inputs for the respective memory dice. Individual chip enable inputs may be separated by other chip connections such as power and ground. The memory dice may include multiple chip enable inputs to allow easy wire bonding of the individual chip enable inputs to a die without requiring any jumpers within the package. Circuitry may be included so that undriven chip enable inputs are masked and driven chip enable inputs may be propagated to the memory die to enable memory accesses while a single chip enable input is only connected to the capacitance of a single bonding pad. | 01-10-2013 |
20140269043 | PHASE CHANGE MEMORY MASK - Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic. | 09-18-2014 |
20140269045 | CELL PROGRAMMING VERIFICATION - Technology for verifying cell programming for a phase change memory array is disclosed. In an example, a method may include sending a reset pulse to a phase change memory cell. The method may further include sensing a threshold voltage of the phase change memory cell in response to applying first and second verify voltages across the phase change memory cell, where the second verify voltage is lower than the first verify voltage. The method may also include determining whether the threshold voltage of the phase change memory cell was below the first or second verify voltages. | 09-18-2014 |
20150085570 | PHASE CHANGE MEMORY MASK - Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic. | 03-26-2015 |
Dashen Chu, Waukesha, WI US
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20120319687 | SYSTEM AND METHOD FOR RECEIVING MAGNETIC RESONANCE (MR) SIGNALS - A preamplifier is provided for a radio frequency (RF) receiver coil in a magnetic resonance imaging (MRI) system. The preamplifier includes an amplifier configured to receive at least one magnetic resonance (MR) signal from the RF receiver coil and configured to generate an amplified MR signal. An input circuit is electrically connected to the amplifier. The input circuit is configured to be electrically connected to an output of the RF receiver coil for transmitting the at least one MR signal from the RF receiver coil to the amplifier. The input circuit includes an impedance transformer and a field effect transistor (FET). The FET is electrically connected between the impedance transformer and the amplifier. The FET has an FET impedance. The impedance transformer is configured to transform a source impedance of at least approximately 100 ohms. The impedance transformer is further configured to transform the FET impedance into a preamplifier input impedance of less than approximately 5 ohms. | 12-20-2012 |
20130093425 | RADIO FREQUENCY (RF) COIL ARRAY FOR A MAGNETIC RESONANCE IMAGING SYSTEM - A radio frequency (RF) coil array that includes an RF coil support structure, and a plurality of RF coils coupled to the RF coil support structure, the RF coil support structure configured to enable the plurality of RF coils to be positioned in an underlap configuration and repositioned to an overlap configuration. A medical imaging system and a method of manufacturing the RF coil array are also described herein. | 04-18-2013 |
Dongyu Chu, Bonn DE
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20120289268 | METHOD AND DEVICE FOR ACQUIRING A PATH LOSS - Embodiments of the present invention disclose a method and a device for acquiring a path loss. The method includes: determining a current location of a terminal according to traffic channel signal strength of a current cell accessed by the terminal and broadcast control channel signal strength of at least one neighboring cell actually received by the terminal; or, determining the current location of the terminal according to broadcast control channel signal strength of at least two neighboring cells of the current cell accessed by the terminal; and acquiring a path loss of a corresponding designated neighboring cell from a correspondence according to the determined current location of the terminal. According to the embodiments of the present invention, as long as the network-side device can determine the current location of the terminal, the network-side device is capable of acquiring the path loss from the current location to any designated neighboring cell. | 11-15-2012 |
20130183997 | METHOD AND DEVICE FOR CONVERTING MOBILE ALLOCATION - Embodiments of the present invention provide a method for converting mobile allocation and an upper control node of a base station. The method for converting mobile allocation includes: determining that at least one cell in cells controlled by an upper control node of a base station requires mobile allocation (MA) conversion; and instructing a base station to which the at least one cell belongs to convert, according to a time slot cluster, an MA occupied by a time slot of the at least one cell, where the time slot cluster is formed by the same time slots on different carrier frequencies. The embodiments of the invention may implement dynamic MA conversion according to actual conditions of a network, thereby guaranteeing the performance of the network, and improving the calling experience of users. | 07-18-2013 |
20130252663 | POWER SHARING METHOD AND BASE STATION - The embodiments of the present disclosure provide a power sharing method and a base station, wherein the method comprises the following steps of: according to a power demand of the communication systems of at least one mode among communication systems of different modes sharing a same power amplifier, determining whether to perform power sharing among communication systems of different modes ( | 09-26-2013 |
Fang-Hsien Chu, New Taipei City TW
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20120218163 | MOBILE COMMUNICATION DEVICE AND ANTENNA STRUCTURE THEREOF - A mobile communication device having an antenna structure includes a grounding element and an antenna element. The grounding element includes a main ground and a protruded ground being connected to an edge of the main ground. Antenna element includes a feeding portion and a radiating portion. The feeding portion includes a feeding point, a first strip and a second strip. The first strip and the second strip are both connected to the feeding point. The radiating portion includes a first open end, a second open end and a shorting point which is connected to the protruded ground by a short-circuiting strip. There is a first coupling gap between the first strip and a first section of the radiating portion having the first open end. There is a second coupling gap between the second strip and a second section of the radiating portion having the second open end. | 08-30-2012 |
20130033410 | COMMUNICATION ELECTRONIC DEVICE AND ANTENNA STRUCTURE THEREIN - A communication electronic device includes an antenna structure at least having a grounding element and an antenna element. One edge of the grounding element has a notch, and the antenna element is disposed in the notch of the grounding element. The antenna element includes a feeding portion and a shorting portion, wherein the feeding portion at least includes a first segment, a second segment, and a third segment. There is a first coupling gap between the second segment of the feeding portion and a first shorting segment of the shorting portion which includes an open end of the shorting portion. There is a second coupling gap between the third segment of the feeding portion and a second shorting segment of a shorting portion which includes the shorting end of the shorting portion. | 02-07-2013 |
Fang-Tsun Chu, Taichung City TW
Patent application number | Description | Published |
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20120306023 | Device-Manufacturing Scheme for Increasing the Density of Metal Patterns in Inter-Layer Dielectrics - A method includes forming a transistor at a surface of a semiconductor substrate, wherein the step of forming the transistor comprises forming a gate electrode, and forming a source/drain region adjacent the gate electrode. First metal features are formed to include at least portions at a same level as the gate electrode. Second metal features are formed simultaneously, and are over and contacting the first metal features. A first one of the second metal features is removed and replaced with a third metal feature, wherein a second one of the second metal features is not removed. A fourth metal feature is formed directly over and contacting the gate electrode, wherein the third and the fourth metal features are formed using a same metal-filling process. | 12-06-2012 |
20130063843 | ESD PROTECTION FOR 2.5D/3D INTEGRATED CIRCUIT SYSTEMS - An integrated circuit structure includes first and second integrated circuit devices disposed on a interposer. Each integrated circuit device has electrostatic discharge (ESD) protection circuitry therein connected to an internal ESD bus. The first and second integrated circuit devices communicate with one another through the interposer. The interposer includes an ESD bus electrically connected to the ESD busses of the first and second integrated circuit devices for providing cross-device ESD protection for the integrated circuit devices. | 03-14-2013 |
20130093052 | SEMICONDUCTOR INTEGRATED CIRCUIT HAVING A RESISTOR AND METHOD OF FORMING THE SAME - The present application discloses a semiconductor integrated circuit including a substrate having electrical devices formed thereon, a local interconnection layer formed over the substrate, and a global interconnection layer formed over the local interconnection layer. The local interconnection layer has a first set of conductive structures arranged to electrically connect within the individual electrical devices, among one of the electrical devices and its adjacent electrical devices, or vertically between the devices and the global interconnection layer. At least one of the first set of conductive structures is configured to have a resistance value greater than 50 ohms. The global interconnection layer has a second set of conductive structures arranged to electrically interconnect the electrical devices via the first set conductive structures. | 04-18-2013 |
20140042557 | Device-Manufacturing Scheme for Increasing the Density of Metal Patterns in Inter-Layer Dielectrics - A method includes forming a transistor at a surface of a semiconductor substrate, wherein the step of forming the transistor comprises forming a gate electrode, and forming a source/drain region adjacent the gate electrode. First metal features are formed to include at least portions at a same level as the gate electrode. Second metal features are formed simultaneously, and are over and contacting the first metal features. A first one of the second metal features is removed and replaced with a third metal feature, wherein a second one of the second metal features is not removed. A fourth metal feature is formed directly over and contacting the gate electrode, wherein the third and the fourth metal features are formed using a same metal-filling process. | 02-13-2014 |
Fang-Tsun Chu, Dali City TW
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20120081820 | ESD POWER CLAMP FOR HIGH-VOLTAGE APPLICATIONS - An ESD clamp includes a first power supply node; an ESD detection circuit coupled to the first power supply node and configured to detect an ESD event; and a bias circuit coupled to the first power supply node and configured to output a second power supply voltage to a second power supply node. The second power supply voltage is lower than a first power supply voltage on the first power supply node. The ESD detection circuit is configured to activate the bias circuit to change working state in response to the ESD event. The ESD clamp further includes an LV ESD clamp coupled to the second power supply node, wherein the LV ESD clamp includes LV devices with maximum endurable voltages lower than the first power supply voltage. | 04-05-2012 |
Fu-Hui Chu, Dongshi Township TW
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20110271938 | CROSSBOW - A crossbow has a stock assembly and a bow assembly. The stock assembly has a body, a retainer and a buffering spacer. The retainer is made of hardened plastic and has a vibrating frequency, a bolt groove, a mounting hole and a holding protrusion. The buffering spacer is made of hardened plastic and has a shape corresponding to the retainer, a vibrating frequency different from the vibrating frequency of the retainer, a gap, a through hole and a holding hole. The bow assembly is securely connected to the stock assembly and has a mounting base, two bow arms, a bowstring and a fastener. The different vibrating frequencies between the buffering spacer and the retainer can destroy the transmission of the shock wave between the retainer and the buffering spacer to disperse and reduce the impact force of the crossbow after shooting a bolt. | 11-10-2011 |
Han-Min Chu, Kwei Shan Hsiang TW
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20120214331 | HIGH-POWER CONNECTOR HAVING HEAT DISSIPATION STRUCTURE - The present invention is to provide a high-power connector having a heat dissipation structure, which includes a cover, a plurality of resilient metal terminals and a plurality of auxiliary metal plates. The cover is made of an insulating material and defines a plurality of receiving spaces therein. The resilient metal terminals are fitted in the receiving spaces respectively. The front section of each resilient metal terminal has an arcuate shape, passes through a lateral side of the cover, and is exposed from the cover. The front section of each auxiliary metal plate is electrically connected to the corresponding resilient metal terminal, and the rear section of each auxiliary metal plate is electrically connected to a circuit board. Since the auxiliary metal plates have relatively low impedance capable of rapidly releasing the heat generated by the connector, the components of the connector are prevented from premature aging attributable to high temperature. | 08-23-2012 |
Hien T. Chu, Fountain Valley, CA US
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20120324980 | ELECTRONIC DEVICE AVOIDING FALSE DETECTION OF FREE FALL EVENT BASED ON DETECTED OPERATING MODES - An electronic device is disclosed comprising an acceleration sensor operable to generate an acceleration signal, and a free fall detector operable to detect a free fall event in response to the acceleration signal. A frequency response of the acceleration signal is measured, and the free fall detector is disabled when a magnitude of the frequency response within one of a plurality of frequency bands exceeds a threshold, wherein each frequency band corresponds to one of a plurality of normal operating modes. | 12-27-2012 |
20150032407 | FALLING STATE DETERMINATION FOR DATA STORAGE DEVICE - Determination of when an electronic device such as a data storage device (DSD) is falling. An input is received indicating an acceleration of the electronic device during a time period. A classifier function is calculated using the input and it is determined whether the electronic device is falling based on a calculated value of the classifier function. During a calibration process, acceleration values are recorded representing a plurality of actual falls and a plurality of false falls of the electronic device. Weight values are set for a weighted classifier function using the recorded acceleration values and the weighted classifier function is stored in a memory of the electronic device. | 01-29-2015 |
Hui-Tung Chu, New Taipei City TW
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20120324738 | POCKETKNIFE WITH AN ASSISTED OPENING AND CLOSING MECHANISM - A pocketknife has a handle, a blade, an assistant assembly and a locking assembly. The handle has a cavity defined in the handle. The blade is mounted pivotally at one end of the handle. The assistant assembly is mounted on the handle, assists to extend the blade out or retract the blade in the cavity and has a dial, a biasing lever and a spring. The dial is mounted rotatably in the handle and is connected securely on a proximal end of the blade. The biasing lever is mounted in the handle and is mounted eccentrically and pivotally on the dial. The spring is mounted around the biasing lever and biases the biasing lever to rotate the dial in two rotational directions to retract or extend the blade. The assistant assembly assists the user to open or close the pocketknife. | 12-27-2012 |
Hung-Kuo (james) Chu, Tainan TW
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20120084832 | Time Managed Challenge-Response Test - A method of generating a time managed challenge-response test is presented. The method identifies a geometric shape having a volume and generates an entry object of the time managed challenge-response test. The entry object is overlaid onto the geometric shape, such that the entry object is distributed over a surface of the geometric shape, and a portion of the entry object is hidden at any point in time. The geometric shape is rotated, which reveals the portion of the entry object that is hidden. A display region on a display is identified for rendering the geometric shape and the geometric shape is presented in the display region of the display. | 04-05-2012 |
Jinn Chu, Keelung City TW
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20120189866 | COMPOSITE SUBSTRATE - A composite substrate including an amorphous metallic substrate and a metallic glass layer is provided. The metallic glass layer is deposited on the amorphous metallic substrate. The composite substrate adopts the metallic glass layer for the amorphous metallic substrate to have ductility and improving a problem of room-temperature brittleness of the amorphous metallic substrate so as to raise the application value of the amorphous metallic substrate. | 07-26-2012 |
Jitung Chu, New Taipei City TW
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20120204353 | MULTI-FUNCTIONAL FOLDING KNIFE - A multi-functional folding knife has a handle and a blade. The blade is rotatably connected to the handle and has a cutting segment, a screwdriver head, a rope recess, a peak segment and an engaging mouth. The cutting segment is formed on a bottom of the blade and has a straight edge and a saw-tooth edge. The screwdriver head is formed on and protrudes from a top of the blade and is slotted and flat in shape. The rope recess is obliquely formed in the top of the blade adjacent to the screwdriver head and has a severing edge. The peak segment is formed on and protrudes from the top of the blade near the middle and adjacent to the rope recess. The engaging mouth is formed downwardly in the top of the blade between the peak segment and a rear end of the blade and has an engaging hook. | 08-16-2012 |
20130081281 | RETRACTABLE KNIFE WITH A SAFETY LOCK - A retractable knife has a handle, an operating element, a blade assembly and a safety lock. The handle has a casing and a cover. The casing has a guiding channel and two sliding recesses. The cover is connected securely to the casing and has a guiding slot and two button-holes. The operating element is slidably mounted in the handle and has a guiding shaft and a pushing button. The blade assembly is connected to the handle and the operating element and has a blade and a mounting panel. The mounting panel is connected to the blade, is securely mounted in the handle and has a column slot and two pairs of positioning holes. The safety lock is slidably mounted on the handle between the cover and the mounting panel, is selectively locked with the operating element and has a front locking lever and a rear locking lever. | 04-04-2013 |
20140101943 | RETRACTABLE KNIFE WITH A MULTISTAGE POSITIONING FUNCTION - A retractable knife with a multistage positioning function has a handle, a blade slidably mounted in the handle, and an operating assembly connected to the handle and the blade. The handle has a guiding panel with a guiding hole and multiple pairs of positioning recesses formed in an inner sidewall defined around the guiding hole. The operating assembly has a guiding rod with a positioning head selectively engaging between one of the pairs of the positioning recesses. The blade is capable of protruding out of the handle with a multistage function for the convenience of using the knife. Since a resilient element pushes the guiding rod to allow the positioning head to abut the guiding panel, the blade does not easily slide out of the handle, so the knife can be used safely. | 04-17-2014 |
20140173911 | OUT OF FRONT KNIFE WITH ASSISTED OPENING MECHANISM - An out of front knife with an assisted opening mechanism has a handle, a blade mounted in the handle, a thumb stud that drives the blade, and an extending assembly that assists with extending the blade out of the handle. With two sliders and two springs of the extending assembly, only when the blade is intentionally pushed to move a preset distance and overcome a preset resistance, one of the springs pulls and assists the blade of the out of front knife to extend out of the handle. Therefore, the out of front knife with the assisted opening mechanism is used safely. | 06-26-2014 |
Jiunn-Yl Chu, Chubei City TW
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20120074384 | PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES - Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed. | 03-29-2012 |
Jiun-Yu Chu, Wu-Ku Hsiang TW
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20120009004 | INK PEN WITH FIRESTARTER - A writing pen, including a writing pen portion; a ferro rod positionable to extend from the writing pen portion; and a striker portion positionable to extend from the writing pen portion to substantially conceal the ferro rod, The striker portion has one or more striker members which may be struck against the ferro rod for generating sparks. | 01-12-2012 |
Jiun-Yu Chu, New Taipei City TW
Patent application number | Description | Published |
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20120324738 | POCKETKNIFE WITH AN ASSISTED OPENING AND CLOSING MECHANISM - A pocketknife has a handle, a blade, an assistant assembly and a locking assembly. The handle has a cavity defined in the handle. The blade is mounted pivotally at one end of the handle. The assistant assembly is mounted on the handle, assists to extend the blade out or retract the blade in the cavity and has a dial, a biasing lever and a spring. The dial is mounted rotatably in the handle and is connected securely on a proximal end of the blade. The biasing lever is mounted in the handle and is mounted eccentrically and pivotally on the dial. The spring is mounted around the biasing lever and biases the biasing lever to rotate the dial in two rotational directions to retract or extend the blade. The assistant assembly assists the user to open or close the pocketknife. | 12-27-2012 |
20140173911 | OUT OF FRONT KNIFE WITH ASSISTED OPENING MECHANISM - An out of front knife with an assisted opening mechanism has a handle, a blade mounted in the handle, a thumb stud that drives the blade, and an extending assembly that assists with extending the blade out of the handle. With two sliders and two springs of the extending assembly, only when the blade is intentionally pushed to move a preset distance and overcome a preset resistance, one of the springs pulls and assists the blade of the out of front knife to extend out of the handle. Therefore, the out of front knife with the assisted opening mechanism is used safely. | 06-26-2014 |
Jui-Yi Chu, Taichung County TW
Patent application number | Description | Published |
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20120153339 | LIGHT-EMITTING DIODE CHIP STRUCTURE AND FABRICATION METHOD THEREOF - A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided. | 06-21-2012 |
Julia Chu, Christchurch NZ
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20080277898 | Reinforced motorcycle frame - A reinforced motorcycle frame that is structurally strong and has a light and compact structure. The reinforced motorcycle frame has a head tube, at least two main beams, multiple transverse rods, at least one support beam, at least two mounting struts and at least two reinforcing struts. The main beams and at least one support beams are connected to and extend down from the head tube. The transverse rods are mounted between and strengthen the main beams. The mounting struts connect the at least one support beam to the main beams. The reinforcing struts connect the at least one support beam to the main beams to further strengthen the reinforced motorcycle frame. | 11-13-2008 |
Jung-Tang Chu, Zhunan Township TW
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20120080698 | HIGH EFFICIENCY LIGHT EMITTING DIODES - The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light. | 04-05-2012 |
20120104409 | FORMING LIGHT-EMITTING DIODES USING SEED PARTICLES - A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure. | 05-03-2012 |
20130095581 | THICK WINDOW LAYER LED MANUFACTURE - A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies. | 04-18-2013 |
20130140592 | LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHODS OF MANUFACTURING SAME - A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate. | 06-06-2013 |
20140021483 | Forming Light-Emitting Diodes Using Seed Particles - A seed layer for growing a group | 01-23-2014 |
Kam Wing Chu, Burlingame, CA US
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20120330701 | METHOD AND SYSTEM FOR REFERRAL TRACKING - A method for identifying a source of a job referral, the method including identifying a URL that the job applicant uses to access a web page with functionality to enable the job applicant to apply for the first job, identifying a first job message record using the URL, obtaining an original job message record for an original job message using the first job message record, determining a first sender of the original job message from the original job message record, determining that a second job message was sent to the job applicant for a second job at the company by a second sender, wherein the second job message was sent to the job applicant before the first job message and wherein the second job message was sent to the job applicant within a look-back period, and identifying the second sender as the source of the referral for the first job. | 12-27-2012 |
20120330856 | METHOD AND SYSTEM FOR CHANNEL OPTIMIZATION - A method for selecting a communication channel. The method includes identifying a job, identifying a target for the job, determining a characteristic of the target, obtaining analytic information using the characteristic, identifying, using the analytic information, a first communication channel of a plurality of communication channels over which to send a first job message for the job to the target, wherein a conversion rate associated with the first communication channel is higher than any conversion rate associated with any other of the plurality of communication channels and wherein the conversion rates are determined using the analytic information, and generating the first job message, wherein the first job message is associated with a first URL, and wherein the first URL is associated with the job, a sender, the target, and the first communication channel, and sending the first job message over the first communication channel to the target. | 12-27-2012 |
20130036065 | METHOD AND SYSTEM FOR IDENTIFYING JOB CANDIDATES, SOCIAL NETWORKS, AND RECRUITERS TO FACILITATE THE RECRUITING PROCESS - In general, the invention relates to a method for identifying a job candidate. The method includes determining new job characteristics for the new job using a job record corresponding to the new job, identifying an old job using the new job characteristics and old job characteristics, where the old job is similar to the new job and where a similarity between the old job and the new job is quantified using a job similarity factor. The method further includes selecting a job candidate, where the job candidate has applied for the old job, determining a candidate matching factor for the job candidate based on the old job, determining a rating for the job candidate using the job similarity factor and the candidate matching factor for the job candidate, and identifying the job candidate to contact about the job based on the rating. | 02-07-2013 |
20130054483 | METHOD AND SYSTEM FOR SOURCE TRACKING - A method for tracking referrals using a third party applicant tracking system (ATS). The method include receiving a request to display a web page at a URL from a client used by a job candidate, where the URL is associated with a job at a company and the job candidate. The method further includes providing to the client a web page associated with the URL that includes a description of the job and a link to an ATS, receiving a request for a web page corresponding to the job, where the request is initiated by selection of the link. The method further includes making a determination that the ATS is a third party ATS and, in response, generating a third party referral URL, a unique identifier associated with the job, and an identifier associated with a source type, and providing the third party referral URL to the client. | 02-28-2013 |
20140089303 | METHOD AND SYSTEM FOR IDENTIFYING JOB CANDIDATES - A method for ranking profile records. The method includes receiving a search request from a user, obtaining a user profile associated with the user, generating a query based on the search request, issuing the query to a profile database, receiving search results in response to the query, wherein the search results comprise a plurality of profile records, and wherein each of the plurality of profile records comprises a plurality of action records and is associated with a potential job candidate, ranking the plurality of profile records using the user profile and a plurality of network scores to obtain ranked profile records, and transmitting the ranked profile records to the user. | 03-27-2014 |
Keng Te Chu, Taichung County TW
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20120046387 | SLURRY FOR PREPARING BORON NITRIDE AGGREGATES OF SPHERICAL GEOMETRY AND APPLICATION THEREOF - The present invention provides a slurry for preparing boron nitride aggregates of spherical geometry, comprising: 3 wt %˜25 wt % of boron nitride; 1 wt %˜25 wt % of a nano-ceramic material; and a solvent as a complement to 100 wt %. In comparison with conventional preparation methods, preparation of boron nitride aggregates of spherical geometry at relatively low temperature can be achieved by using the slurry. Therefore, the demands of energy conservation and low cost are fulfilled. Besides, the present invention also provides a method for preparing boron nitride aggregates of spherical geometry. | 02-23-2012 |
Li-Jung Chu, Taichung City TW
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20110285853 | MOVEMENT DETECTION SYSTEM AND MOVEMENT SENSING FOOTWEAR - A movement detection system includes: a movement sensing footwear operable for providing an infrared signal, and for generating and wirelessly transmitting a footwear motion signal that corresponds to acceleration of the movement sensing footwear; an image acquisition module for capturing images that contain the infrared signal; and a data processing device connected electrically to the image acquisition module for receiving the images captured by the image acquisition module, including a wireless receiver module for receiving the footwear motion signal transmitted by the wireless transmitter module, and configured to acquire information corresponding to acceleration of the movement sensing footwear based on the footwear motion signal, and to acquire information corresponding to position of the movement sensing footwear relative to the image acquisition module based on the images captured by the image acquisition module. | 11-24-2011 |
Lon Chu, Pacifica, CA US
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20120259193 | ELECTRICALLY CONDUCTIVE BALLOON CATHETER - A balloon catheter having a mesh affixed thereto. The mesh is formed having members extending longitudinally and circumferentially about the balloon into columns and rows respectively. Each member of the mesh has a resistance or impedance that changes as the member is deformed such that, when the member comprises a length (L) a measured resistance or impedance will be different than when the member comprise a length (L | 10-11-2012 |
20120259238 | Anatomical Visualization With Electrically Conductive Balloon Catheter - A balloon catheter for providing a 3-dimensional rendering of the interior of a cavity, the catheter system including a controller, a catheter connected to the controller and a balloon positioned on the catheter. The balloon includes a mesh having members extending longitudinally and circumferentially about the balloon where each member of the mesh has an electrical characteristic that changes as the member is deformed. The controller uses a measurement of the variable electrical characteristic to generate a three-dimensional rendering of an interior surface of the cavity, which can be rotating to different viewing angles. | 10-11-2012 |
Lu-Chung Chu, Taoyuan City TW
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20120098981 | IMAGE CAPTURE METHODS AND SYSTEMS - Image capture methods and systems are provided. First, at least one preview image is captured via an image capture unit of an electronic device. It is determined whether an image capturing status is stable or not according to the preview image. When the image capturing status is stable, the electronic device is enabled to perform a photography process to obtain an image via the image capture unit. | 04-26-2012 |
20140176738 | IMAGE CAPTURE METHODS AND SYSTEMS - Image capture methods and systems are provided. First, at least one preview image is captured via an image capture unit of an electronic device. It is determined whether an image capturing status is stable or not according to the preview image. When the image capturing status is stable, the electronic device is enabled to perform a photography process to obtain an image via the image capture unit. | 06-26-2014 |
Lye Pin Chu, Kuala Lumepur MY
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20120182264 | NON-PLANAR REFLECTIVE FOLDED OPTICS - An optical sensor assembly is disclosed. The optical sensor assembly includes a folded optical system that utilizes one or more non-planar reflective surfaces that enable the manipulation or conditioning of the overall thickness of the sensor assembly, the field of view of the sensor assembly, and the image size, either independently or in combination. | 07-19-2012 |
20120206919 | ULTRA-LOW PROFILE OPTICAL FINGER NAVIGATION ILLUMINATION SYSTEM THROUGH SEGMENTATION - An optical sensor assembly is disclosed. The optical sensor assembly includes an illumination system that segments light emitted by a light source into multiple segments. The multiple segments are allowed to travel different optical paths on their way to a common target area and are further allowed to irradiate different portions of the common target area. This enables a low-profile optical sensor assembly to be achieved. | 08-16-2012 |
Manh-Quynh Chu, Fontanil Cornillon FR
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20100035214 | RADIO-OPAQUE DENTAL PROSTHETIC MEMBER - The invention relates to a prefabricated radio-opaque dental prosthetic member made of a composite material that comprises fibres embedded in a resin, said resin containing at least one radio-opaque component, characterized in that the radio-opaque component consists of nanoparticles having a size lower than 50 nm in order to transmit a portion or the totality of the wavelengths ranging from 400 to 600 nm of an incident radiation. | 02-11-2010 |
Manh-Quynh Chu, Saint Egreve FR
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20080280263 | TRANSPARENT AND RADIO-OPAQUE RETENTION PIN - A dental retention pin made of composite material includes a core consisting of fibers embedded in a resin matrix. The fibers, which have a refractive index (n), are radio-opaque, and the refractive index (n′) of the resin forming the matrix has a value close to that of the fibers. | 11-13-2008 |
Mei Ling Chu, Chupei City TW
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20120024580 | EPOXY RESIN COMPOSITION, AND PREPREG AND PRINTED CIRCUIT BOARD USING THE SAME - Disclosed is an epoxy resin composition for printed circuit board, which includes (A) an epoxy resin comprising a dicyclopentadiene type epoxy resin; (B) a copolymer of styrene and maleic anhydride as a curing agent; (C) a curing accelerator; (D) an optional silane dispersing agent; (E) an optional phosphorous-containing flame retardant; (F) an optional toughening agent; and (G) an optional inorganic filler. | 02-02-2012 |
20120263955 | RESIN COMPOSITION AND USES OF THE SAME - A resin composition is provided. The resin composition comprises an epoxy resin and a hardener, wherein the amount of the hardener is about 10 parts by weight to about 200 parts by weight per 100 parts by weight of the epoxy resin and the hardener comprises a first styrene-maleic anhydride copolymer (SMA) copolymer and a second SMA copolymer, the first SMA copolymer has a molar ratio of styrene to maleic anhydride m1, the second SMA copolymer has a molar ratio of styrene to maleic anhydride m2, and m1−m2≧3. | 10-18-2012 |
Ming-Lee Chu, Hsin Chu TW
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20120308178 | OPTICAL PATH SWITCHING DEVICE - An optical path switching device comprises at least one movable carrier plate; at least two optical fiber connection sockets arranged on the movable carrier plate and each connected with an optical fiber; and a driving device mechanical coupled to the movable carrier plate, driving the movable carrier plate to carry one of the optical fiber connection sockets to a position corresponding to an optical fiber connection plug, whereby the optical fiber connection plug can be coupled to the optical fiber connection socket connecting with an intended optical path. The present invention switches the optical path in a purely-mechanical way without using any optical component. The present invention has advantages of simple structure, low cost and low signal loss. | 12-06-2012 |
Ming-Tsung Chu, Shen Kang TW
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20120091974 | METHOD FOR CONTROLLING GENERATION OF ELECTRICAL POWER - A method is provided for controlling power generation. A control circuit is employed to control first and second switches of each of multiple switch groups of a drive circuit so that the first switches are kept in OFF state while the second switches are each switched between ON and OFF states at each given time point. With the second switches of the switch groups alternately switched ON/OFF, electrical power is fed to a circuit system, which includes a power storage device or an application device of loading. | 04-19-2012 |
Nhon N. Chu, Firmingillot FR
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20090219487 | METHOD AND SYSTEM FOR PRESERVING THE CREATIVE INTENT WITHIN A MOTION PICTURE PRODUCTION CHAIN - A method for communicating and preserving creative intent within a motion picture production chain, including a production stage, and at least one of a subsequent laboratory or post production stage, including capturing an original image of a scene during the production stage; generating a look representative of a creative intent, wherein the look is a digital representation of a creative alteration of the captured original scene image; and applying the look to the captured original scene image and confirming approval of the look during the production stage. The digital representation of the look is stored as a recipe for generating the creative alteration, and communicated from the production stage to at least one of the subsequent laboratory and post-production stages for applying the look to the captured motion picture footage during subsequent laboratory and post-production stages. | 09-03-2009 |
Po-Jen Chu, Baoshan Township TW
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20120077672 | Porous Catalyst for a Fuel Cell and Method for Producing the Catalyst Thereof - A porous catalyst includes at least one noble nano-metal particle, an oxide for forming porous structures, and a carrier material for supporting the oxide and the at least one noble nano-metal particle. The porous catalyst shows a large electrochemical surface area and a highly conductive ability. Further, the noble nano-metal particles are separated on the oxides uniformly, and the oxide of the catalyst forms a porous structure to provide a large electrochemical surface area. The porous catalyst provides excellent proton/electron transfer ability and increases the reaction rate. | 03-29-2012 |
Pu-Chun Chu, Miao-Li County TW
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20110176331 | DISPLAY APPARATUS AND ASSEMBLING METHOD THEREOF - A display including a back cover, a front frame, a display panel, a light guide plate, at least one metal bracket and a light emitting element is provided. The front frame is secured to the back cover to form an accommodating space. The display panel and the light guide plate are disposed in the accommodating space. The light guide plate, which has at least one light incident surface and a light exit surface, is configured between the back cover and the display panel. The light exit surface faces toward the display panel. The metal bracket is disposed at side of the accommodating space. The metal bracket has a first part and a second part connected together. The first part is secured to at least the back cover or the front frame. The light emitting element is between the second part and the light incident surface. | 07-21-2011 |
20140104876 | LIGHT-GUIDING PLATE, LIGHT-EMITTING MODULE AND DISPLAY APPARATUS - A light-emitting module comprises a light-guiding plate, a plurality of light-guiding elements and a light-emitting unit. The light-guiding plate guides the light direction and has at least an incident surface and two opposite surfaces. The light-guiding elements are disposed on one of the surfaces of the light-guiding plate, and each include a rough surface having a maximum roughness larger than zero micron and less than or equal to 20 microns. The light-emitting unit is disposed to the incident surface of the light-guiding plate. The light emitted by the light-emitting unit is applied to the light-guiding plate, and then, by the guiding of the light-guiding plate and the light-guiding elements, is outputted through one of the surfaces of the light-guiding plate in an alternate form of bright and dark zones. The invention also discloses a light-guiding plate and a display apparatus. | 04-17-2014 |
20140104881 | DISPLAY APPARATUS AND LIGHT-EMITTING MODULE AND LIGHT-GUIDING PLATE THEREOF - A light-emitting module includes a light-guiding plate, a plurality of light-guiding elements and a light-emitting unit. The light-guiding plate can guide the direction of light, and has at least a light input surface and two opposite flat surfaces. The light-guiding elements are disposed at one of the surfaces of the light-guiding plate. By viewing along a direction perpendicular to the surfaces, the shape of each of the light-guiding elements is curve shape with at least one inflection point. The light-emitting unit is disposed adjacent to the light input surface of the light-guiding plate. The light emitted by the light-emitting unit enters the light-guiding plate, is guided by the light-guiding plate and the light-guiding elements, and is outputted through one of the surfaces of the light-guiding plate in an alternating arrangement of bright and dark zones. The invention also discloses a display apparatus and the light-guiding plate. | 04-17-2014 |
Qi-Ping Chu, Delfgauw NL
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20100034240 | Transmitter-Receiver System - The invention relates to a transmitter-receiver system comprising at least three transmitters and at least a first receiver and a second receiver, wherein the receivers are connected to a computing device that is arranged to analyse signals that said receivers receive from said transmitters and to calculate length and attitude information of an imaginary baseline connecting said receivers depending on at least carrier phase information of said signals using interval analysis. | 02-11-2010 |
Raymond Chu, Jubi City TW
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20120216850 | FOLDABLE SOLAR ENERGY COLLECTOR - A foldable solar energy collector has a base and a panel body. The base has an elevatable telescopic shaft mounted thereon. The panel body has a bottom board and multiple side panels pivotally mounted around a perimeter of the bottom board. Two foldable panels are respectively and pivotally mounted on two edges of each side panel. A link assembly is pivotally mounted between the panel body and the telescopic shaft and has multiple inside and outside links pivotally connected to each other. One end of each inside link away from a corresponding outside link is pivotally mounted on the telescopic shaft. One end of each outside link away from a corresponding inside link is pivotally mounted between adjacent two of the foldable panels. When the telescopic shaft is elevated, the link assembly is pulled to drive the panel body to unfold or fold, rendering convenience in operation and storage. | 08-30-2012 |
Rencai Chu, Kanagawa JP
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20090020263 | Cooling Apparatus for Fluid - An apparatus for efficiently cooling the heat of a hot target without enlarging the size of a cooling device or needing either a piping to connect an evaporation portion and a condensation portion or a steam circulation pump. An exoergic-side heat exchanger has a fluid passage for the target fluid, and stores a coolant for cooling the fluid in the fluid passage through heat exchange. An endoergic-side heat exchanger has at least two coolant passages, the one ends of which communicate with the endoergic-side heat exchanger, and the other ends of which communicate with each other through a common coolant passage. A cooling device cools the coolant by exchanging heat with the coolant passing through the exoergic-side heat exchanger. The coolant passage has a diameter or an equivalent diameter within a range of 2 mm to 16 mm, and all the coolant passages have a substantially identical or equivalent diameter. | 01-22-2009 |
Ron Fu Chu, Taipei City TW
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20130026554 | NAND TYPE FLASH MEMORY FOR INCREASING DATA READ/WRITE RELIABILITY - A NAND type flash memory for increasing data read/write reliability includes a semiconductor substrate unit, a base unit, and a plurality of data storage units. The semiconductor substrate unit includes a semiconductor substrate. The base unit includes a first dielectric layer formed on the semiconductor substrate. The data storage units are adjacent to each other and formed on the first dielectric layer. Each data storage unit includes at least two floating gates formed on the first dielectric layer, a second dielectric layer formed on the first dielectric layer and between the two floating gates, an inter-gate dielectric layer formed on the two floating gates and the second dielectric layer, at least one control gate formed on the inter-gate dielectric layer, and a third dielectric layer formed on the first dielectric layer and surrounding and tightly connecting with the two floating gates, the inter-gate dielectric layer, and the control gate. | 01-31-2013 |
20130026556 | NAND TYPE FLASH MEMORY FOR INCREASING DATA READ/WRITE RELIABILITY - A NAND type flash memory for increasing data read/write reliability includes a semiconductor substrate unit, a base unit, and a plurality of data storage units. The semiconductor substrate unit includes a semiconductor substrate. The base unit includes a first dielectric layer formed on the semiconductor substrate. The data storage units are formed on the first dielectric layer. Each data storage unit includes two floating gates formed on the first dielectric layer, two inter-gate dielectric layers respectively formed on the two floating gates, two control gates respectively formed on the two inter-gate dielectric layers, a second dielectric layer formed on the first dielectric layer, between the two floating gates, between the two inter-gate dielectric layers, and between the two control gates, and a third dielectric layer formed on the first dielectric layer and surrounding and connecting with the two floating gates, the two inter-gate dielectric layers, and the two control gates. | 01-31-2013 |
20130029465 | MANUFACTURING METHOD OF MEMORY STRUCTURE - The instant disclosure relates to a manufacturing method of memory structure for dynamic random-access memory (DRAM). The method includes the steps of: (a) providing a substrate having a plurality of parallel trenches formed on a planar surface thereof each defining a buried gate, where a first insulating layer is formed on the planar surface of the substrate; (b) forming a gate oxide layer on the surface of each trench that defines the buried gate; (c) disposing a metal filler on the gate oxide layer to fill each of the trenches; (d) removing the metal filler in the upper region of each trench to selectively expose the gate oxide layer; (e) implanting ions at an oblique angle toward the exposed portions of the gate oxide layer in each trench to respectively form a drain electrode and a source electrode in the substrate abreast the gate oxide layer. | 01-31-2013 |
20130062674 | SPIN TRANSFER TORQUE RANDOM ACCESS MEMORY - A spin transfer torque random access memory includes a substance unit, a source line unit, an insulation unit, a transistor unit, a MTJ unit, and a bit line unit. The substance unit includes a substance layer. The source line unit includes a plurality of source lines formed inside the substance layer. The transistor unit includes a plurality of transistors respectively disposed on the source lines. Each transistor includes a source region formed on each corresponding source line, a drain region formed above the source region, a channel region formed between the source region and the drain region, and a surrounding gate region surrounding the source region, the drain region, and the channel region. The MTJ unit includes a plurality of MTJ structures respectively disposed on the transistors. The bit line unit includes at least one bit line disposed on the MTJ unit. | 03-14-2013 |
20130062676 | FLASH MEMORY STRUCTURE - A flash memory structure includes a semiconductor substrate, a gate dielectric layer on the semiconductor substrate, a floating gate on the gate dielectric layer, a capacitor dielectric layer conformally covering the floating gate, wherein the capacitor dielectric layer forms a top surface and four sidewall surfaces; and an isolated conductive cap layer covering the top surface and the four sidewall surfaces. | 03-14-2013 |
20130113110 | Semiconductor Structure Having Lateral Through Silicon Via And Manufacturing Method Thereof - The present invention provides a semiconductor structure having a lateral TSV and a manufacturing method thereof. The semiconductor structure includes a chip having an active side, a back side disposed opposite to the active side, and a lateral side disposed between the active side and the back side. The chip further includes a contact pad, a lateral TSV and a patterned conductive layer. The contact pad is disposed on the active side. The lateral TSV is disposed on the lateral side. The patterned conductive layer is disposed on the active side and is electrically connected to the lateral TSV and the contact pad. | 05-09-2013 |
20130119448 | MEMORY LAYOUT STRUCTURE AND MEMORY STRUCTURE - A memory array layout includes an active region array having a plurality of active regions, wherein the active regions are arranged alternatively along a second direction and parts of the side of the adjacent active regions are overlapped along a second direction; a plurality of first doped region, wherein each first doped region is disposed in a middle region; a plurality of second doped region, wherein each second doped region is disposed in a distal end region respectively; a plurality of recessed gate structures; a plurality of word lines electrically connected to each recessed gate structure respectively; a plurality of digit lines electrically connected to the first doped region respectively; and a plurality of capacitors electrically connected to each second doped region respectively. | 05-16-2013 |
20130140620 | Flash Memory and Manufacturing Method Thereof - The present invention discloses a flash memory. The flash memory includes a substrate and a memory string, a plurality of landing pads, a plurality of common source lines, a plurality of bit line contacts and at least a bit line, which are disposed on the substrate in sequence. The memory string includes a plurality of storage transistors. The landing pads are disposed between each of the storage transistors. The common source lines and the bit line contact are electrically connected to the landing pads alternatively. The common line is disposed on the common line contacts and is electrically connected thereto. The present invention further provides a manufacturing method of making the same. | 06-06-2013 |
20130146954 | Method Of Memory Array And Structure Form - The present invention provides a memory array including a substrate, an isolation region, a plurality of active regions, a plurality of buried bit lines, a plurality of word lines, a plurality of drain regions and a plurality of capacitors. The isolation region and the active regions are disposed in the substrate and the active regions are encompassed and isolated by the isolation region. The buried bit lines are disposed in the substrate and extend in the second direction. The word lines are disposed in the substrate extend in the first direction. The drain regions are disposed in the active region not covered by the word lines. The capacitors are disposed on the substrate and electrically connected to the drain regions. | 06-13-2013 |
20130168751 | HIGH-K METAL GATE RANDOM ACCESS MEMORY - The instant disclosure relates to a high-k metal gate random access memory. The memory includes a substrate, a plurality of bit line units, source regions, gate structures, drain regions, word line units, and capacitance units. The substrate has a plurality of trenches, and the bit line units are arranged on the substrate. The source regions are disposed on the bit line units, and the gate structures are disposed on the source regions. Each gate structure has a metal gate and a channel area formed therein. The gate structures are topped with the drain regions. The word lines units are arranged between the source and drain regions The capacitance units are disposed on the drain regions. Another memory is also disclosed, where each drain region and a portion of each gate structure are disposed in the respective capacitance unit, with the drain region being a lower electrode layer. | 07-04-2013 |
20130168801 | METHOD OF FORMING ISOLATION AREA AND STRUCTURE THEREOF - The instant disclosure relates to a method of forming an isolation area. The method includes the steps of: providing a substrate having a first type of ion dopants, where the substrate has a plurality of trenches formed on the cell areas and the isolation area between the cell areas of the substrate, with the side walls of the trenches having an oxidation layer formed thereon and the trenches are filled with a metallic structure; removing the metallic structure from the trenches of the isolation area; implanting a second type of ions into the substrate under the trenches of the isolation area; and filling all the trenches with an insulating structure, where the trenches of the isolation area are filled up fully by the insulating structure to form a non-metallic isolation area. | 07-04-2013 |
20130168811 | CAPACITOR HAVING MULTI-LAYERED ELECTRODES - The instant disclosure relates to a capacitor having multi-layered electrodes. The capacitor includes a dielectric layer having a first surface and a second surface oppositely arranged, a first electrode formed on the first surface, and a second electrode formed on the second surface. At least one of the first and second electrodes having a low band gap material layer formed on the dielectric layer and a conducting layer formed on the low band gap material layer. The band gap of the low band gap material layer is lower than the band gap of the conducting layer. | 07-04-2013 |
20130168812 | MEMORY CAPACITOR HAVING A ROBUST MOAT AND MANUFACTURING METHOD THEREOF - A manufacturing method for memory capacitor having a robust moat, comprising the steps of: providing a substrate; forming a patterned sacrificial layer on the substrate having a moat to separate a cell area and a peripheral area; forming a supporting layer on the sacrificial layer and filling the moat to form a annular member, wherein the supporting layer and the sacrificial layer arranged in alignment to form a stack structure; forming a plurality row of capacitor trenches on the substrate, wherein the capacitor trenches are formed at intervals in the stack structure; and forming a conducting layer on the supporting layer and covering the substrate and the inner surface of the stack structure defining the capacitor trenches. | 07-04-2013 |
20130203232 | MANUFACTURING METHOD OF RANDOM ACCESS MEMORY - A manufacturing method of a random access memory includes the following steps: providing a semiconductor structure having an array region and a peripheral region; forming a plurality of first trenches in the array region, and concurrently, a plurality of second trenches on the peripheral region; forming a polysilicon layer to cover the array region and the peripheral region, and the first and the second trenches are filled up with the polysilicon layer; planarizing the polysilicon layer so the remaining polysilicon layer only resides in the first and the second trenches; forming a conductive layer on the semiconductor structure; patterning the conductive layer to form a plurality of landing pads on the array region, and a plurality of bit line units on the peripheral region; and forming a plurality of capacitor units which is in electrical connection to the landing pads. | 08-08-2013 |
20130203233 | MANUFACTURING METHOD OF MEMORY CAPACITOR WITHOUT MOAT STRUCTURE - A manufacturing method of a memory capacitor without a moat structure includes the steps of: providing a semiconductor substrate defined with an array region and a peripheral region; forming a first oxidized layer on the array region; forming a second oxidized layer on the peripheral region; planarizing the first and the second oxidized layers; forming an insulating layer on the first and the second oxidized layers; forming a plurality of trenches on the array region, where the trenches pass through the first oxidized layer and the insulating layer on the first oxidized layer; forming a conductive layer on the side and base surfaces of each trench; removing a portion of the conductive layer and a portion of the insulating layer to form a plurality of notches to expose the first oxidized layer; and removing the first oxidized layers which are exposed from the notches. | 08-08-2013 |
20140308807 | METHOD FOR FABRICATING A SEMICONDUCTOR MEMORY - A method for fabricating a semiconductor memory includes the following steps. Active areas are defined in a substrate. An oxide layer is then formed on the active areas. The oxide layer is subjected to a surface treatment. A first polysilicon layer, a buffer layer and a hard mask are deposited. Recessed access devices are formed in an array region of the substrate. After the recessed access devices are formed, the hard mask and the buffer layer are removed to thereby form transistors in a peripheral region. A second polysilicon layer is deposited on the first polysilicon layer. The first and second polysilicon layers are then etched into a gate structure. | 10-16-2014 |
Rongming Chu, Newbury Park, CA US
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20130001646 | ALGaN/GaN HYBRID MOS-HFET - A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a portion of the gate electrode that extends through the barrier layer and the passivation layer, wherein the passivation layer is a first material and the gate dielectric is a second material, and the first material is different than the second material. | 01-03-2013 |
20130026495 | III-Nitride Metal Insulator Semiconductor Field effect Transistor - A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers. | 01-31-2013 |
20130328061 | NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND METHOD OF MAKING THE SAME - A normally-off transistor includes a channel layer, an electron supply layer overlaying the channel layer, a source electrode and a drain electrode on the electron supply layer, an area in the electrode supply layer between the source electrode and the drain electrode treated with a fluoride based plasma followed by a chlorine based plasma treatment, a gate insulator overlaying the area, and a gate electrode overlaying the gate insulator. | 12-12-2013 |
20130341632 | CURRENT APERTURE DIODE AND METHOD OF FABRICATING SAME - A diode and a method of making same has a cathode an anode and one or more semiconductor layers disposed between the cathode and the anode. A dielectric layer is disposed between at least one of the one or more semiconductor layers and at least one of the cathode or anode, the dielectric layer having one or more openings or trenches formed therein through which the at least one of said cathode or anode projects into the at least one of the one or more semiconductor layers, wherein a ratio of a total surface area of the one or more openings or trenches formed in the dielectric layer at the at least one of the one or more semiconductor layers to a total surface area of the dielectric layer at the at least one of the one or more semiconductor layers is no greater than 0.25. | 12-26-2013 |
20140264361 | III-NITRIDE TRANSISTOR WITH ENGINEERED SUBSTRATE - A transistor includes a buffer layer, a channel layer over the buffer layer, a barrier layer over the channel layer, a source electrode electrically connected to the channel layer, a drain electrode electrically connected to the channel layer, a gate electrode on the barrier layer between the source electrode and the drain electrode, a backside metal layer, a substrate between a first portion of the buffer layer and the backside metal layer; and a dielectric between a second portion of the buffer layer and the backside metal layer. | 09-18-2014 |
Sanford Chu, Leonie Condotel SG
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20120223318 | P-CHANNEL FLASH WITH ENHANCED BAND-TO-BAND TUNNELING HOT ELECTRON INJECTION - A p-channel flash memory is formed with a charge storage stack embedded in a hetero-junction layer in which a raised source/drain is formed. Embodiments include forming a dummy gate stack on a substrate, forming a layer on the substrate by selective epitaxial growth, on each side of the dummy gate stack, forming spacers on the layer, forming raised source/drains, removing the dummy gate stack, forming a cavity between the spacers, and forming a memory gate stack in the cavity. Different embodiments include forming the layer of a narrow bandgap material, a narrow bandgap layer under the spacers and a wide bandgap layer adjacent thereto, or a wide bandgap layer under the spacers, a narrow bandgap layer adjacent thereto, and a wide bandgap layer on the narrow bandgap layer. | 09-06-2012 |
Shou-Yu Chu, Taichung City TW
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20120242329 | DETECTION MODULE OF ROTATION SPINDLE - A rotation spindle detection module includes a magnet retainer that retains at least one precision magnet and is mounted to a rotation spindle; at least one Hall device that detects the precision magnet and is arranged at a fixed position adjacent to the magnet retainer; a circuit board that is coupled to the Hall device and forms a circuit to receive a detection signal from the Hall device. As such, components that are used to detect a rotation spindle, including a Hall device, a precision magnet, and a circuit board, are integrated in a modularized fashion so as to achieve the purposes of easy mounting of the detection module to the rotation spindle. | 09-27-2012 |
Shucheng Chu, Hamamatsu-Shi JP
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20110220956 | SILICON LIGHT-EMITTING ELEMENT - A silicon light-emitting element includes a first conductivity type silicon substrate | 09-15-2011 |
20140034853 | ULTRAVIOLET LIGHT GENERATING TARGET, ELECTRON-BEAM-EXCITED ULTRAVIOLET LIGHT SOURCE, AND METHOD FOR PRODUCING ULTRAVIOLET LIGHT GENERATING TARGET - An ultraviolet light generating target | 02-06-2014 |
20140048721 | ULTRAVIOLET LIGHT GENERATING TARGET, ELECTRON-BEAM-EXCITED ULTRAVIOLET LIGHT SOURCE, AND METHOD FOR PRODUCING ULTRAVIOLET LIGHT GENERATING TARGET - An ultraviolet light generating target | 02-20-2014 |
Shu Yi Chu, Howick NZ
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20090048394 | FAST-CURING MODIFIED SILOXANE COMPOSITIONS - Fast-curing modified siloxane compositions comprise; (1) an alkoxy- or silanol-functional silicone intermediate, (2) at least one amine reactive ingredient selected from the group consisting of acetoacetate-functional ingredients, acrylate-functional ingredients, and mixtures thereof, (3) an epoxy-functional ingredient, (4) a curing agent selected from the group consisting of amines, aminosilanes, ketimines, aldimines and mixtures thereof, and (5) water. Other ingredients useful in forming fast-curing modified siloxane compositions of this invention include silanes, organometallic catalysts, solvents, pigments, fillers and modifying agents. The above-identified ingredients are combined and reacted to form a fully cured protective film comprising a cross-linked enamine polysiloxane and/or acrylate polysiloxane chemical structure in a reduced amount of time when compared to conventional epoxy siloxane compositions. | 02-19-2009 |
Siyun Chu, Marbach Am Neckar DE
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20110082622 | METHOD AND DEVICE FOR DIAGNOSING THE DYNAMICS OF AN EXHAUST GAS SENSOR - The invention relates to a method for diagnosing the dynamics of an exhaust gas sensor embodied as a lambda probe, which is disposed in an exhaust gas duct of an internal combustion engine in the direction of flow of the exhaust gas upstream or downstream of a catalytic converter and with which the air/fuel ratio of the gas mixture supplied to the internal combustion engine is controlled via a control circuit. During the diagnosis, provision is made in the method according to the invention for at least one actuator intervention to be specified by means of a control algorithm of a diagnostic controller specifically in the direction of an asymmetric behavior, which is achieved by an extension of one of the two ramps, until the actuator intervention is compensated by a possible asymmetric dynamic error of the exhaust gas sensor, a reaction to said actuator intervention being used as the criterion for assessing an asymmetric dynamic error of said exhaust gas sensor. The device for carrying out the method provides that a diagnostic device, which is connected to the exhaust gas sensor, includes a diagnostic controller, with which during the diagnosis at least one actuator intervention can be specified specifically in the direction of an asymmetric behavior and the presence, respectively the extent, of the asymmetric dynamic error of said exhaust gas sensor can be detected from the measurement of the intervention when said intervention is being compensated due to a possible asymmetric dynamic error of said exhaust gas sensor. Even small asymmetric dynamic errors of the exhaust gas sensor, which can be embodied as a two point or as a wideband lambda probe, can especially be quickly and reliably detected with the method and the device for carrying out said method; thus contributing to improved on-board diagnostics. | 04-07-2011 |
20110314892 | METHOD AND DEVICE FOR THE DYNAMIC MONITORING OF A LAMBDA PROBE - A method for the dynamic monitoring of a first lambda probe arranged in an exhaust-gas duct of an internal combustion engine upstream of an exhaust-gas purification system. A period of an output signal of the first lambda probe is determined in a controller of the internal combustion engine, and a lambda regulating signal is determined from an output signal of a second lambda probe connected downstream of the exhaust-gas purification system. A first threshold value for a lengthening of the period of the output signal of the first lambda probe is predefined, in that a characteristic signal ( | 12-29-2011 |
Song-Fa Chu, Kaohsing TW
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20110157872 | Heat dissipation arrangement for LED lighting device - An LED lighting device includes a plurality of parallel illumination assemblies each including an elongated metal bar and a plurality of LED elements secured to the bar, and a heat dissipation assembly comprising a metal substrate comprising a plurality of hollow posts arranged in rows on a top surface; a plurality of parallel metal units each comprising a rod releasably secured to both the substrate and the bar, the rod including a plurality of hollow, closed U-shaped members each partially fastened in the post; and a plurality of metal frame members for releasably securing the rods together. | 06-30-2011 |
Stelar Chu, Ping-Cheng City TW
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20110175700 | CONDUCTIVE POLYMER ELECTRONIC DEVICES WITH SURFACE MOUNTABLE CONFIGURATION AND METHODS FOR MANUFACTURING SAME - Surface-mountable conductive polymer electronic devices include at least one conductive polymer active layer laminated between upper and lower electrodes. Upper and lower insulation layers, respectively, sandwich the upper and lower electrodes. First and second planar conductive terminals are formed on the lower insulation layer. First and second cross-conductors are provided by plated through-hole vias, whereby the cross-conductors connect each of the electrodes to one of the terminals. Certain embodiments include two or more active layers, arranged in a vertically-stacked configuration and electrically connected by the cross-conductors and electrodes in parallel. Several embodiments include at least one cross-conductor having a chamfered or beveled entry hole through the upper insulation layer to provide enhanced adhesion between the cross-conductor and the insulation layer. Several methods for manufacturing the present surface-mountable conductive polymer electronic devices are also provided. | 07-21-2011 |
20140077923 | CONDUCTIVE POLYMER ELECTRONIC DEVICES WITH SURFACE MOUNTABLE CONFIGURATION AND METHODS FOR MANUFACTURING SAME - Surface-mountable conductive polymer devices include a conductive polymer layer between first and second electrodes, on which are disposed first and second insulation layers, respectively. First and second planar conductive terminals are on the second insulation layer. A first cross-conductor connects the second electrode to the first terminal, and is separated from the first electrode by a portion of the first insulation layer. A second cross-conductor connects the first electrode to the second terminal, and is separated from the second electrode by a portion of the second insulation layer. In some embodiments, at least one cross-conductor includes a beveled portion through the first insulation layer to provide enhanced adhesion between the cross-conductor and the first insulation layer, while allowing greater thermal expansion without undue stress. In other embodiments, these advantages are achieved by having at least one cross-conductor in physical contact with a metallized anchor pad on the first insulation layer. | 03-20-2014 |
Tang-Yuan Chu, Hualien TW
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20120270314 | NON-TUMORIGENIC EXPANSION OF PLURIPOTENT STEM CELLS - A method for expansion of human embryonic stem (hES) cells in a medium including human umbilical cord-derived mesenchymal stem cells (HUCMSCs) as a feeder is provided. The human embryonic stem cells (hES) maintain the features of embryonic stem cells in the medium, such as pluripotency, unlimited undifferentiated proliferation and normal karyotypes. Also provided is a method for non-tumorigenic expansion of the human embryonic stem cells (hES) that is free from forming teratoma. | 10-25-2012 |
Ting-Yao Chu, Chu-Nan TW
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20120268432 | IMAGE DISPLAY SYSTEMS, SHIFT REGISTERS AND METHODS FOR CONTROLLING SHIFT REGISTER - An image display system includes a gate driving circuit and a data driving circuit. The gate driving circuit generates gate driving signals to drive pixels in a pixel array. The data driving circuit generates data driving signals to provide data to the pixels. At least one of the gate and data driving circuits includes a shift register. The shift register includes flip-flops coupled in serial. Each flip-flop generates output signals in response to an input signal, and is reset in response to a reset signal. One of the flip-flops receives a first output signal of a last stage flip-flop as the reset signal thereof, and at least one flip-flop following the flip-flop receiving the first output signal of the last stage flip-flop receives a second output signal of the flip-flop receiving the first output signal of the last stage flip-flop as the reset signal thereof. | 10-25-2012 |
Tsui Ping Chu, Kuching MY
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20120068303 | Semiconductor Device Comprising a Metal System Including a Separate Inductor Metal Layer - In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system. | 03-22-2012 |
20130140677 | CAPACITOR STRUCTURES FOR SEMICONDUCTOR DEVICE - A semiconductor device comprising a semiconductor substrate and a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises a capacitor stack comprising a lower and an upper capacitor, respectively comprising first and second dielectric materials, wherein the first and second dielectric materials are different materials and/or have different thicknesses from each other. This can minimize the voltage dependence of the capacitance of the composite capacitor structure. It is also possible to provide a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises at least a first and a second capacitor stack, each comprising a lower and an upper capacitor. The capacitors can be MIM capacitors. | 06-06-2013 |
Tsui Ping Chu, Sarawak MY
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20120241914 | REDUCTION OF FLUORINE CONTAMINATION OF BOND PADS OF SEMICONDUCTOR DEVICES - A method of reducing contamination of contact pads in a metallization system of a semiconductor device. Fluorine contamination of contact pads in a semiconductor device can be reduced by appropriately covering the sidewall portions of a metallization system in the scribe lane in order to significantly reduce or suppress the out diffusion of fluorine species, which may react with the exposed surface areas of the contact pads. The quality of the bond contacts is enhanced, possibly without requiring any modifications in terms of design rules and electrical specifications. | 09-27-2012 |
Vincent Chu, New South Wales AU
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20100000542 | FOREHEAD SUPPORTS FOR FACIAL MASKS - A forehead support for a mask assembly includes a frame connector provided to a mask frame, a forehead cushion support movably mounted to the frame connector for generally linear movement between retracted and extended positions with respect to the frame connector, and an adjustment knob movably mounted to the frame connector and threadably engaged with the forehead cushion support such that turning movement of the adjustment knob causes the forehead cushion support to be moved between the retracted and extended positions. The adjustment knob, forehead cushion support, and frame connector are constructed and arranged such that over-rotation of the adjustment knob beyond the extended position of the forehead cushion support is adapted to release the adjustment knob from the forehead cushion support and the frame connector. | 01-07-2010 |
Vincent Chu, Darlington AU
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20120103340 | FOREHEAD SUPPORTS FOR FACIAL MASKS - A forehead support for a mask assembly includes a frame connector provided to a mask frame, a forehead cushion support movably mounted to the frame connector for generally linear movement between retracted and extended positions with respect to the frame connector, and an adjustment knob movably mounted to the frame connector and threadably engaged with the forehead cushion support such that turning movement of the adjustment knob causes the forehead cushion support to be moved between the retracted and extended positions. The adjustment knob includes a resilient prong having a ratchet bump. The ratchet bump is adapted to selectively engage a series of ridges provided to the frame connector to provide indexed incremental adjustment. | 05-03-2012 |
Vincent Chu, Bella Vista, New South Wales, AU AU
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20100071700 | FOREHEAD SUPPORTS FOR FACIAL MASKS - A face mask assembly (FMA) for supplying breathable gas to a wearer. The face mask assembly (FMA) includes a mask frame including a support, a facial cushion attached to the mask frame, and a forehead support. The forehead support includes a forehead cushion assembly and an adjustment knob operatively coupled to the forehead cushion assembly. The adjustment knob is threadably engaged with the forehead cushion assembly such that turning movement of the adjustment knob causes the mask frame to be moved between retracted and extended positions with respect to the forehead cushion assembly. | 03-25-2010 |
Wei-Cheng Chu, Tainan TW
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20120187549 | IC In-process Solution to Reduce Thermal Neutrons Soft Error Rate - Integrated Circuits and methods for reducing thermal neutron soft error rate (SER) of a digital circuit are provided by doping a protection layer on top of the metal layer and in physical contact with the metal layer of the digital circuit, wherein the protection layer is doped with additional thermal neutron absorbing material. The thermal neutron absorbing material can be selected from the group consisting of Gd, Sm, Cd, B, and combinations thereof. The protection layer may comprise a plurality of sub-layers among which a plurality of them containing additional thermal neutron absorbing material. | 07-26-2012 |
Wei-Cheng Chu, Alhambra, CA US
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20120268775 | PORTABLE STANDALONE CONTROLLER FOR OPTICAL DISC LABEL PRINTERS - A portable standalone controller for optical disc label printers has at least one output port and a processing unit. The at least one output port is for connecting to at least one optical disc label printer. The processing unit connects to the at least one output, receives label content, transmits the received label content to the at least one connected optical disc label printer through the at least one output port and issues at least one printing command to the at least one connected optical disc label printer so the at least one connected optical disc label printer starts to label according to the label content. The controller connects to a computer or an external device only for acquiring the label content. The controller allows users to use the connected optical disc label printer without operating a corresponding computer. | 10-25-2012 |
Wei-Chih Chu, Ciaotou Township TW
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20120176032 | LED LAMP WITH IMPROVED HEAT SINK - An LED lamp includes a rectifier; an inverted cup shaped heat sink comprising spaced heat radiating members projecting upward, and spaced hollow cylindrical heat radiating elements arranged around the heat radiating members; a mounting plate fastened between the rectifier and the heat radiating members; L-shaped heat conduction members each having a longitudinal part inserted through the heat radiating element and a lateral part engaged with bottom of the heat sink; and a circuit board secured to the bottom of the heat sink to fasten the lateral parts of the heat conduction members, the circuit board comprising LEDs each electrically connected to the rectifier and being in contact with the lateral parts of the heat conduction members. The heat sink further includes first, second, and third heat radiating plates arranged around the heat radiating element. | 07-12-2012 |
Xingchen Chu, Point Cook AU
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20100281166 | Software Platform and System for Grid Computing - A software platform for providing grid computing on a network of computing nodes, comprising a configurable service container executable at the nodes, including message dispatching, communication, network membership and persistence modules, and adapted to host pluggable service modules. When executed at the nodes at least one instance of the container includes a membership service module for maintaining network connectivity between the nodes, at least one instance of the container includes a scheduler service module configured to receive one or more tasks from a client and schedule the tasks on at least one of the nodes, and at least one instance of the container includes an executor service module for receiving one or more tasks from the scheduler service module, executing the tasks so received and returning at least one result to the scheduler service module. | 11-04-2010 |
Yian-Shu Chu, New Taipei City TW
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20120330600 | ELECTRONIC DEVICE, POSITIONING METHOD, POSITIONING SYSTEM, COMPUTER PROGRAM PRODUCT, AND COMPUTER-READABLE RECORDING MEDIUM - An electronic device, a positioning method, a positioning system, a computer program product, and a computer-readable recording medium are provided. The electronic device includes at least one wireless transceiver, at least one measurement unit (MU), and a processor. The processor is coupled with the wireless transceiver and the MU. The processor obtains distances between a plurality of participant devices through the wireless transceiver, wherein the participant devices include the electronic device. The processor obtains a displacement of each of the participant devices through the wireless transceiver and the MU and determines the spatial location of each of the participant devices according to the distances and the displacements. | 12-27-2012 |
Yi-Lin Chu, New Taipei City TW
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20110236232 | AIR COMPRESSION DEVICE - An air compression device is applied in an air compressor. A rotatable pressure regulating disk and a valve are disposed in a rotor set. When external air enters an air chamber in the rotor set, the air is exhausted after being compressed through rotation of a first rotor and a second rotor. When the two rotors compress the air, a user may control the pressure regulating disk to rotate to advance or postpone exhaust of the air from the valve, so as to change an exhaust pressure in the air chamber to adjust an exhaust volume output by the rotor set. An adjustable air intake disk may further be added, so that timing adjustment can be performed during both air intake and exhaust. | 09-29-2011 |
20120045354 | AIR COMPRESSION DEVICE - An air compression device is applied in an air compressor, and mainly includes a first rotor, a second rotor, a stop disk, a transmission element and a drive element. When external air enters an air chamber in the air compression device, the air is rotated and compressed by the first rotor and the second rotor, and then is exhausted, the transmission element generates axial displacement vertically according to actual requirements on air admission or exhaust, and drives the drive element and the first rotor to displace, so as to change a capacity of the air chamber, and adjust the air output. | 02-23-2012 |
Yi-Shou Chu, Taoyuan TW
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20120125398 | CONDENSING LENS FOR HIGH CONCENTRATION PHOTOVOLTAIC MODULE AND MANUFACTURING METHOD THEREOF - The present invention discloses a manufacturing method of a condensing lens for a high concentration photovoltaic (HCPV) module. A buffer layer made of silicone is added between a glass and the condensing lens for adhering the glass to the condensing lens. Because the buffer layer can be formed on the glass before adhering to the condensing lens, a higher temperature for increasing adhesion between the glass and the buffer layer can be applied. It also allows the follow-up processes to have sufficient treatment time, thereby increasing the flexibility of processing schedule. | 05-24-2012 |
Yu-Ping Chu, Hsin-Chu City TW
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20120242298 | FIXED-ON-TIME CONTROLLER UTILIZING AN ADAPTIVE SAW SIGNAL FOR DISCONTINUOUS MODE PFC POWER CONVERSION - A fixed-on-time controller utilizing an adaptive saw signal for discontinuous mode PFC power conversion, the fixed-on-time controller comprising: an error amplifier, having a negative input end coupled to a feedback signal, a positive input end coupled to a reference voltage, and an output end for providing a threshold signal; an adaptive current source generator, used to generate an adaptive current source according to the threshold signal; a capacitor, charged by the adaptive current source, being used for carrying a saw signal; a switch, used to discharge the capacitor under the control of a reset signal; and a comparator, having a negative input end coupled to the threshold signal, a positive input end coupled to the saw signal, and an output end for providing a turn-off signal; and a fixed-on-time driver circuit, used to provide a driving signal and the reset signal according to the turn-off signal and a sensing signal. | 09-27-2012 |