Patent application number | Description | Published |
20080293259 | METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY - The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×10 | 11-27-2008 |
20130256757 | SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMITTER CONTACT - A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively. | 10-03-2013 |
20130260526 | SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMITTER CONTACT - A lateral heterojunction bipolar transistor is formed on a semiconductor-on-insulator substrate including a top semiconductor portion of a first semiconductor material having a first band gap and a doping of a first conductivity type. A stack of an extrinsic base and a base cap is formed such that the stack straddles over the top semiconductor portion. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor portion that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap and having a doping of the second conductivity type is selectively deposited on the emitter region and the collector region to form an emitter contact region and a collector contact region, respectively. | 10-03-2013 |
20140132276 | DETERMINATION OF ISOELECTRIC POINTS OF BIOMOLECULES USING CAPACITIVE SENSORS - A mechanism is provided for determining an isoelectric point of a molecule. A first group of capacitance versus voltage curves of a capacitor is measured. The capacitor includes a substrate, dielectric layer, and conductive solution. The first group of curves is measured for pH values of the solution without the molecule bound to a functionalized material on the dielectric layer of the capacitor. A second group of capacitance versus voltage curves of the capacitor is measured when the molecule is present in the solution, where the molecule is bound to the functionalized material of the dielectric layer of the capacitor. A shift is determined in the second group of curves from the first group of curves at each pH value. The isoelectric point of the molecule is determined by extrapolating a pH value corresponding to a shift voltage being zero, when the shift is compared to the pH values. | 05-15-2014 |
20140175522 | Field Effect Transistor-Based Bio Sensor - An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus. | 06-26-2014 |
20140179047 | Field Effect Transistor-Based Bio-Sensor - An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus. | 06-26-2014 |