Patent application number | Description | Published |
20080318496 | METHODS OF CRYSTALLOGRAPHICALLY REORIENTING SINGLE CRYSTAL BODIES - A method of changing the crystallographic orientation of a single crystal body is disclosed that includes the steps of characterizing a crystallographic orientation of the single crystal body and calculating a misorientation angle between a select crystallographic direction of the single crystal body and a projection of the crystallographic direction along a plane of a first exterior major surface of the single crystal body. The method further includes removing material from at least a portion of the first exterior major surface to change the misorientation angle. | 12-25-2008 |
20090130415 | R-Plane Sapphire Method and Apparatus - A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage. | 05-21-2009 |
20090136731 | SCINTILLATOR CRYSTALS AND METHODS OF FORMING - A scintillator crystal and a method for growing a scintillator crystal are provided which includes an as-grown Edge-defined Film-fed Growth (EFG) single crystal. The as-grown EFG single crystal has a body having a thickness, a width, and a length, such that the thickness≦width05-28-2009 | |
20090308239 | Transparent Ceramic Composite - A ceramic composite and method of making are provided. The ceramic composite may be transparent and may serve as transparent armor. The ceramic portion of the composite may be single crystal sapphire. The composite may provide adequate protection from projectiles while exhibiting large surface areas and relatively low areal densities. | 12-17-2009 |
20100288117 | Transparent Ceramic Composite - A ceramic composite and method of making are provided. The ceramic composite may be transparent and may serve as transparent armor. The ceramic portion of the composite may be single crystal sapphire. The composite may provide adequate protection from projectiles while exhibiting large surface areas and relatively low areal densities. | 11-18-2010 |
20120001027 | TRANSPARENT CERAMIC COMPOSITE - A ceramic composite and method of making are provided. The ceramic composite may be transparent and may serve as transparent armor. The ceramic portion of the composite may be spinel. The composite may provide adequate protection from projectiles while exhibiting large surface areas and relatively low areal densities. | 01-05-2012 |
20140017479 | METHOD OF FORMING AN R-PLANE SAPPHIRE CRYSTAL - A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage. | 01-16-2014 |
20140084422 | Reclaimed Wafer And A Method For Reclaiming A Wafer - Embodiments of the present invention relate to a reclaimed wafer, a method for reclaiming a wafer, a method for reclaiming a batch of wafers, and a method for forming electronic structures. After being reclaimed, the reclaimed wafers are essentially free of a residue. | 03-27-2014 |
20140102358 | METHOD, DIE, AND APPARATUS FOR CRYSTAL GROWTH - An apparatus, die, and method can be used form a ribbon from a melt, where capillaries are relatively short and spacers are relatively long as compared to a die opening. Such a configuration can cause the melt to flow is a transverse direction that is substantially parallel to the solid/liquid interface to help move impurities to desired locations. In a particular embodiment, a crystal ribbon can be formed where defects, such as microvoids and impurities, are at higher concentrations near outer edges of the crystal ribbon. The outer edges can be removed to produce crystal substrates that are substantially free of microvoids and have no or a relatively low concentration of impurities. In another particular embodiment, the transverse flow can also help to increase the crystal growth rate. | 04-17-2014 |
20140116323 | C-Plane Sapphire Method - A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density. | 05-01-2014 |
20140272413 | Sapphire Ribbons and Apparatus and Method for Producing a Plurality of Sapphire Ribbons Having Improved Dimensional Stability - The present disclosure is directed to an apparatus and method for forming sapphire ribbons via Edge-Defined Film-Fed Growth (EFG). Further, the present disclosure is directed to a plurality of concurrently grown sapphire ribbons having features such as a low dimensional variability and elimination of voiding between the sapphire ribbons concurrently grown in a batch. | 09-18-2014 |
20140311402 | Sapphire Sheets and Apparatus and Method for Producing Sapphire Sheets with Angled Heat Shields - The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness. | 10-23-2014 |