Patent application number | Description | Published |
20080245764 | Method for producing a device including an array of microneedles on a support, and device producible according to this method - A method for producing a device which is suitable for delivering a substance into or through the skin and includes an array of microneedles developed out of an Si semiconductor substrate, the microneedles being affixed on and/or inside a flexible support made from a polymer material. A device producible by this method. | 10-09-2008 |
20080254635 | Method for Accelerated Etching of Silicon - A method for the plasma-free etching of silicon using the etching gas ClF | 10-16-2008 |
20080311751 | Method for Etching a Layer on a Substrate - A method for etching a layer that is to be removed on a substrate, in which a Si | 12-18-2008 |
20090026561 | Micromechanical component and corresponding method for its manufacture - A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method. | 01-29-2009 |
20100003790 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A THIN-LAYER CAPPING - A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClF | 01-07-2010 |
20100006427 | REACTOR FOR CARRYING OUT AN ETCHING METHOD FOR A STACK OF MASKED WAFERS AND AN ETCHING METHOD - A reactor for carrying out an etching method for a stack of masked wafers, using an etching gas, preferably chlorotrifluoride (ClF | 01-14-2010 |
20100203739 | METHOD FOR ETCHING A LAYER ON A SILICON SEMICONDUCTOR SUBSTRATE - A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF | 08-12-2010 |
20100206076 | SENSOR ELEMENT - A sensor element is provided for sensing accelerations in three spatial directions, which furnishes reliable measurement results and moreover can be implemented economically and with a small configuration. The sensor element encompasses at least one seismic mass deflectable in three spatial directions, a diaphragm structure that functions as a suspension mount for the seismic mass, and at least one stationary counterelectrode for capacitive sensing of the deflections of the diaphragm structure. According to the exemplary embodiments and/or exemplary methods of the present invention, the diaphragm structure encompasses at least four electrode regions, electrically separated from one another, that are mechanically coupled via the seismic mass. | 08-19-2010 |
20100294710 | Method for producing a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, and component - A method for producing a component, and a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, is provided, the component including at least one patterned material region, and in a first step the patterned material region is produced in that microparticles of a first material are embedded in a matrix of a second material, and in a second step the patterned material region is rendered porous by etching using a dry etching method or a gas-phase etching method. | 11-25-2010 |
20110163398 | METHOD FOR MANUFACTURING SEPARATED MICROMECHANICAL COMPONENTS SITUATED ON A SILICON SUBSTRATE AND COMPONENTS MANUFACTURED THEREFROM - A method for manufacturing separated micromechanical components situated on a silicon substrate includes the following steps of a) providing separation trenches on the substrate via an anisotropic plasma deep etching method, b) irradiating the area of the silicon substrate which forms the base of the separation trenches using laser light, the silicon substrate being converted from a crystalline state into an at least partially amorphous state by the irradiation in this area, and c) inducing mechanical stresses in the substrate. In one specific embodiment, cavities are etched simultaneously with the etching of the separation trenches. The etching depths can be controlled via the RIE lag effect. | 07-07-2011 |
20120018779 | METHOD FOR PRODUCING MICROMECHANICAL PATTERNS HAVING A RELIEF-LIKE SIDEWALL OUTLINE SHAPE OR AN ADJUSTABLE ANGLE OF INCLINATION - A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by thermal oxidation of a SiGe mixed semiconductor layer. | 01-26-2012 |
20120129291 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT - A method for producing a micromechanical component is described. The method includes providing a substrate having a layer system including an insulating material situated on the substrate, a conductive layer section and a protective layer structure connected to the conductive layer section, which borders a section of the insulating material. The method furthermore includes carrying out an isotropic etching process for removing a part of the insulating material, the conductive layer section and the protective layer structure preventing the removal of the bordered section of the insulating material; and a structural element being developed, which includes the conductive layer section, the protective layer structure and the bordered section of the insulating material. | 05-24-2012 |