Patent application number | Description | Published |
20100012185 | Method for the Manufacture of a Solar Cell and the Resulting Solar Cell - In a method for the production of a solar cell, a flat aluminium layer is applied to the back of a solar cell substrate. The aluminium is alloyed into the silicon substrate by the effect of the temperature and forms an aluminium BSF. The remaining aluminium that has not been alloyed into the silicon is subsequently removed. The aluminium BSF is transparent to light. | 01-21-2010 |
20110262338 | METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON - A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen. | 10-27-2011 |
20120003141 | PROCESS AND APPARATUSES FOR PREPARING ULTRAPURE SILICON - A process for preparing high-purity silicon by thermal decomposition of a silicon compound includes decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed. | 01-05-2012 |
20120183465 | PLANT AND PROCESS FOR PREPARING MONOSILANE - A plant and a process prepare monosilane (SiH | 07-19-2012 |
20120189526 | PROCESS AND PLANT FOR PREPARING TRICHLOROSILANE - A process for preparing trichlorosilane includes reacting silicon particles with tetrachlorosilane and hydrogen and optionally with hydrogen chloride in a fluidized-bed reactor to form a trichlorosilane-containing product gas stream, where the trichlorosilane-containing product gas stream is discharged from the reactor via an outlet preceded by at least one particle separator which selectively allows only silicon particles up to a particular maximum size to pass through and silicon particles are discharged from the reactor at preferably regular intervals or continuously via at least one further outlet without such a particle separator. | 07-26-2012 |
20120201728 | METHOD AND SYSTEM FOR PRODUCING MONOSILANE - A plant for preparing monosilane (SiH | 08-09-2012 |
20120234793 | Method and Device for Treating a Substrate Surface of a Substrate - In a method for the treatment of a substrate surface of a flat substrate with a process medium at the substrate underside, the process medium has a removing or etching effect on the substrate surface. The substrates are wetted with the process medium from below in a manner lying horizontally. The upwardly facing substrate top side is wetted or covered with water or a corresponding protective liquid over a large area or over the whole area as protection against the process medium acting on the substrate top side. | 09-20-2012 |
20130064751 | METHOD FOR PRODUCING HIGH PURITY SILICON - A process of producing high-purity silicon includes providing silicon-containing powder, feeding the silicon-containing powder into a gas stream, where the gas has a temperature sufficiently high to convert particles of metallic silicon from a solid state into a liquid and/or gaseous state, collecting and, optionally, condensing the liquid and/or gaseous silicon formed, and cooling the collected liquid and/or condensed silicon in a casting mold, | 03-14-2013 |
20130199440 | MONOCRYSTALLINE SEMICONDUCTOR MATERIALS - A method of producing a monocrystalline semiconductor material includes providing a starting material composed of the semiconductor material, transferring the starting material into a heating zone in which a melt composed of the semiconductor material is fed with the starting material, and lowering the melt from the heating zone and/or raising the heating zone such that, at a lower end portion of the melt, a solidification front forms along which the semiconductor material crystallizes in a desired structure, wherein the starting material composed of the semiconductor material is provided in liquid form and fed into the melt in liquid form. | 08-08-2013 |
20130206056 | METHODS OF PRODUCING CRYSTALLINE SEMICONDUCTOR MATERIALS - A method of producing a crystalline semiconductor material includes feeding particles of the semiconductor material and/or a precursor compound of the semiconductor material into a gas flow, wherein the gas flow has a sufficiently high temperature to convert the particles of the semiconductor material from a solid into a liquid and/or gaseous state and/or to thermally decompose the precursor compound, condensing out and/or separating the liquid semiconductor material from the gas flow, and converting the liquid semiconductor material to a solid state with formation of mono- or polycrystalline crystal properties. | 08-15-2013 |
20150024540 | Device and Method for Producing Thin Films - In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250° C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation. The conveyor path has conveyor rollers, which consist of a temperature-resistant, non-metallic material, preferably of ceramic. A heating device and/or a purge gas feeding device is/are arranged on that side of the conveyor path which is remote from the coating apparatus. | 01-22-2015 |