Patent application number | Description | Published |
20100327697 | Acoustic resonator structure comprising a bridge - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 12-30-2010 |
20100327994 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator. | 12-30-2010 |
20110121689 | POLARITY DETERMINING SEED LAYER AND METHOD OF FABRICATING PIEZOELECTRIC MATERIALS WITH SPECIFIC C-AXIS - An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction. | 05-26-2011 |
20120096697 | METHOD OF FORMING ACOUSTIC RESONATOR USING INTERVENING SEED LAYER - A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer. | 04-26-2012 |
20120161902 | SOLID MOUNT BULK ACOUSTIC WAVE RESONATOR STRUCTURE COMPRISING A BRIDGE - A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer, An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode. | 06-28-2012 |
20120194297 | ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 08-02-2012 |
20120206015 | ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE - An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. | 08-16-2012 |
20120218057 | FILM BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE - A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer. | 08-30-2012 |
20120218058 | COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode. | 08-30-2012 |
20120248941 | STACKED BULK ACCOUSTIC RESONATOR AND METHOD OF FABRICATING THE SAME - A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator includes further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region. | 10-04-2012 |
20120280767 | DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR - A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other. | 11-08-2012 |
20120326807 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises (a) a substrate having atop surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween; (b) an acoustic mirror having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the substrate; (c) a first electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the acoustic mirror; (d) a piezoelectric layer having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the first electrode; and (e) a second electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween. The bottom surface is formed on the top surface of the piezoelectric layer, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A. | 12-27-2012 |
20130063226 | DOUBLE FILM BULK ACOUSTIC RESONATOR HAVING ELECTRODE EDGE ALIGNMENTS PROVIDING IMPROVED QUALITY FACTOR OR ELECTROMECHANICAL COUPLING COEFFICIENT - An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode. | 03-14-2013 |
20130063227 | ACCOUSTIC RESONATOR HAVING MULTIPLE LATERAL FEATURES - A thin film bulk acoustic resonator (FBAR) includes a first electrode stacked on a substrate over a cavity, a piezoelectric layer stacked on the first electrode, and a second electrode stacked on the piezoelectric layer. Multiple lateral features are formed on a surface of the second electrode, the lateral features including multiple stepped structures. | 03-14-2013 |
20130193808 | FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING - A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended. | 08-01-2013 |
20140111288 | ACOUSTIC RESONATOR HAVING GUARD RING - A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a guard ring structure formed around a perimeter of an active region corresponding to an overlap of the first electrode, the first piezoelectric layer, and the second electrode. | 04-24-2014 |
20140118088 | ACCOUSTIC RESONATOR HAVING COMPOSITE ELECTRODES WITH INTEGRATED LATERAL FEATURES - A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch. | 05-01-2014 |
20140118089 | BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER WITH IMPROVED PIEZOELECTRIC CHARACTERISTICS - A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yittrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer. | 05-01-2014 |
20140118090 | BULK ACOUSTIC WAVE RESONATOR HAVING PIEZOELECTRIC LAYER WITH MULTIPLE DOPANTS - A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer. | 05-01-2014 |
20140125202 | BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION AND A PIEZOELECTRIC LAYER WITH MULTIPLE DOPANTS - A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer. | 05-08-2014 |
20140125203 | BULK ACOUSTIC WAVE (BAW) RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION AND A PIEZOELECTRIC LAYER WITH VARYING AMOUNTS OF DOPANT - A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer. | 05-08-2014 |
20140139077 | ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION - An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. A bridge disposed adjacent to one of the sides of the second electrode. | 05-22-2014 |
20140174908 | SCANDIUM-ALUMINUM ALLOY SPUTTERING TARGETS - A sputtering target comprises an alloy of scandium and aluminum, wherein the alloy has a concentration of 3-10 at % scandium and 90-97 at % aluminum. The sputtering target can be used to produce a piezoelectric layer for an apparatus such as an acoustic resonator. | 06-26-2014 |
20140175950 | ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE AND TEMPERATURE COMPENSATION FEATURE - An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode. | 06-26-2014 |