Patent application number | Description | Published |
20120013517 | INTEGRATED LENS ANTENNAS FOR MULTI-PIXEL RECEIVERS FOR PLANETARY AND ASTRONOMICAL INSTRUMENTS - Methods and apparatus for integrating lens antennas for receivers are disclosed. A method of fabricating a lens in accordance with one or more embodiments of the present invention comprises integrating lens material with a dielectric material and flowing the lens material into a desired lens shape. An integrated lens antenna in accordance with one or more embodiments of the present invention comprises a dielectric material, a waveguide feed, coupled to the dielectric material through a leaky wave cavity, and a lens, coupled to the dielectric material opposite the leaky wave cavity, wherein material is first deposited onto the dielectric material, flowed into a desired lens shape and the desired lens shape is transferred to the dielectric material. | 01-19-2012 |
20120280742 | 670 GHZ SCHOTTKY DIODE BASED SUBHARMONIC MIXER WITH CPW CIRCUITS AND 70 GHZ IF - A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest. | 11-08-2012 |
20130229210 | ON-CHIP POWER-COMBINING FOR HIGH-POWER SCHOTTKY DIODE BASED FREQUENCY MULTIPLIERS - A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line. | 09-05-2013 |
20140144009 | Microfabrication Technique of Silicon Microlens Array for Terahertz Applications - A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel. | 05-29-2014 |
20140147192 | SILICON ALIGNMENT PINS: AN EASY WAY TO REALIZE A WAFER-TO-WAFER ALIGNMENT - A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented. | 05-29-2014 |
20140340178 | MULTI-STEP DEEP REACTIVE ION ETCHING FABRICATION PROCESS FOR SILICON-BASED TERAHERTZ COMPONENTS - A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range. | 11-20-2014 |
20150280321 | LOW POWER MULTI-GIGABIT PER SECOND MILLIMETER-WAVE DATA-LINK EMPLOYING MODULATED REFLECTIONS - A system for wirelessly communicating between a base station and a mobile device, including a reflector integrated with a mobile device, wherein the reflector reflects carrier radiation transmitted from a base station, to form a reflection of the carrier radiation, and input data from the mobile device modulates a reflection coefficient of the reflector, thereby modulating the reflection such that the reflection of the carrier radiation carries the input data to the base station. | 10-01-2015 |
20150288048 | INKJET OR PEN BASED PRINTED PERIODIC DIRECTORS FOR MILLIMETER-WAVE LINKS ON FLEXIBLE SUBSTRATES - A data link, comprising a substrate; and an ink structure printed and/or marked on a substrate, wherein the structure directs an electric, magnetic, and/or electromagnetic wave between two locations. | 10-08-2015 |