Patent application number | Description | Published |
20110147936 | SEMICONDUCTOR DEVICE AND DAMASCENE STRUCTURE - The present invention provides a semiconductor device, including a silicon-containing material, a conductive layer deposited on the silicon-containing material, and a diffusion barrier layer interposed between the silicon-containing material and the conductive layer, wherein the diffusion barrier layer contains a rare earth scandate. The present invention further provides a damascene structure containing the rare earth scandate as diffusion barrier. | 06-23-2011 |
20110164345 | METAL-INSULATOR-METAL CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a metal-insulator-metal capacitor, which includes: a substrate, a copper-based bottom electrode overlying the substrate, wherein the copper based bottom electrode is doped with rhenium nitride or ruthenium nitride, a top electrode overlying the copper based bottom electrode, and a capacitor insulator between and adjoining the copper based bottom electrode and the top electrode. | 07-07-2011 |
20120177945 | Whisker-Free Coating Structure and Method for Fabricating the Same - The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure. | 07-12-2012 |