Patent application number | Description | Published |
20090001339 | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same - A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition. | 01-01-2009 |
20090001340 | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same - A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition. | 01-01-2009 |
20090294749 | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same - A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition. | 12-03-2009 |
Patent application number | Description | Published |
20090243457 | WHITE LIGHT EMITTING DIODE PACKAGE FOR INCANDESCENT COLOR - The present invention relates to a white light emitting diode (LED) package that includes a blue LED chip to emit blue light; a yellow phosphor excited by the blue light and emit yellow light, the yellow light to produce a primary white light in combination with the blue light; a red LED chip to emit red light, the red light to adjust the primary white light into secondary white light of an incandescent color; and a package member comprising at least a partial transmissive part covering the blue LED chip, the red LED chip, and the yellow phosphor. The primary white light falls in a region of (0.413, 0.502), (0.335, 0.376), (0.37, 0.371), and (0.439, 0.48) based on a CIE color coordinate standard. | 10-01-2009 |
20120007502 | WHITE LIGHT EMITTING DIODE PACKAGE FOR INCANDESCENT COLOR - The present invention relates to a white light emitting diode (LED) package that includes a blue LED chip to emit blue light; a yellow phosphor excited by the blue light and emit yellow light, the yellow light to produce a primary white light in combination with the blue light; a red LED chip to emit red light, the red light to adjust the primary white light into secondary white light of an incandescent color; and a package member comprising at least a partial transmissive part covering the blue LED chip, the red LED chip, and the yellow phosphor. The primary white light falls in a region of (0.413, 0.502), (0.335, 0.376), (0.37, 0.371), and (0.439, 0.48) based on a CIE color coordinate standard. | 01-12-2012 |
Patent application number | Description | Published |
20100060181 | AC LED DIMMER AND DIMMING METHOD THEREBY - The disclosure relates to an AC LED dimmer and dimming method thereof. The AC LED dimmer includes a rectifier receiving AC voltage from an AC voltage source and full-wave rectifying the AC voltage; a direct current (DC)/DC converter receiving the full-wave rectified voltage from the rectifier, generating a full-wave rectified stepped-up voltage, and generating a pulse enable signal; a pulse width modulation controller receiving the full-wave rectified stepped-up voltage and generating a pulse width modulation signal to dim an AC LED in response to the pulse enable signal; a switch driving the AC LED under control of the pulse width modulation signal, and an electromagnetic interference (EMI) filter to be connected between the AC voltage source and the switch to eliminate electromagnetic interference from the AC voltage source. Accordingly, the dimmer can perform an efficient and linear dimming function and suppress harmonics. | 03-11-2010 |
20110279047 | AC LIGHT EMITTING DEVICE, DRIVING DEVICE THEREOF, AND DRIVING METHOD THEREBY - An AC light emitting device, a driving device thereof and a driving method are disclosed. The driving device includes a sub-driving part turned on corresponding to each of positive and negative voltage regions of an AC voltage source to provide current paths for operating at least two LEDs, and a free-charge part charging with a voltage to be supplied to one of the at least two LEDs which is not operated while the other LED is operated by the sub-driving part. The AC light emitting device, the driving device thereof and the driving method thereby can solve problems, such as a decrease in power factor, severe total harmonic distortion, excessive flickering, and the like, due to operating characteristics of the AC light emitting device by application of an AC voltage source thereto. | 11-17-2011 |
20130093341 | AC LED DIMMER AND DIMMING METHOD THEREBY - The disclosure relates to an AC LED dimmer and dimming method thereof. The AC LED dimmer includes a rectifier receiving AC voltage from an AC voltage source and full-wave rectifying the AC voltage; a direct current (DC)/DC converter receiving the full-wave rectified voltage from the rectifier, generating a full-wave rectified stepped-up voltage, and generating a pulse enable signal; a pulse width modulation controller receiving the full-wave rectified stepped-up voltage and generating a pulse width modulation signal to dim an AC LED in response to the pulse enable signal; a switch driving the AC LED under control of the pulse width modulation signal, and an electromagnetic interference (EMI) filter to be connected between the AC voltage source and the switch to eliminate electromagnetic interference from the AC voltage source. Accordingly, the dimmer can perform an efficient and linear dimming function and suppress harmonics. | 04-18-2013 |
Patent application number | Description | Published |
20080196167 | Air Mat and Method For Manufacturing and Device of Molding the Same - The present invention relates to a method for manufacturing an air mat that reduces the number of manufacturing processes by means of rotational molding, while preventing the generation of defective products, to a device for molding an air mat, and to an air mat manufactured and molded by the method and device. In a method for manufacturing an air mat formed in such a manner as to integrally couple a cushion part having a plurality of air bags arranged therein for containing air at the insides thereof with a plate-shaped lower sheet disposed on the lower surface of the cushion part, the method includes the steps of: preparing a lower mold having a plurality of air bag molding recesses having given depths arranged at given intervals thereon, for molding the cushion part of the air mat. | 08-21-2008 |
20100325808 | AIR MAT AND METHOD FOR MANUFACTURING AND DEVICE OF MOLDING THE SAME - The present invention relates to a method for manufacturing an air mat that reduces the number of manufacturing processes by means of rotational molding, while preventing the generation of defective products, to a device for molding an air mat, and to an air mat manufactured and molded by the method and device. In a method for manufacturing an air mat formed in such a manner as to integrally couple a cushion part having a plurality of air bags arranged therein for containing air at the insides thereof with a plate-shaped lower sheet disposed on the lower surface of the cushion part, the method includes the steps of: preparing a lower mold having a plurality of air bag molding recesses having given depths arranged at given intervals thereon, for molding the cushion part of the air mat. | 12-30-2010 |
20100330222 | AIR MAT AND METHOD FOR MANUFACTURING AND DEVICE OF MOLDING THE SAME - The present invention relates to a method for manufacturing an air mat that reduces the number of manufacturing processes by means of rotational molding, while preventing the generation of defective products, to a device for molding an air mat, and to an air mat manufactured and molded by the method and device. In a method for manufacturing an air mat formed in such a manner as to integrally couple a cushion part having a plurality of air bags arranged therein for containing air at the insides thereof with a plate-shaped lower sheet disposed on the lower surface of the cushion part, the method includes the steps of: preparing a lower mold having a plurality of air bag molding recesses having given depths arranged at given intervals thereon, for molding the cushion part of the air mat. | 12-30-2010 |
Patent application number | Description | Published |
20120262015 | RESOLVER OF ELECTRIC DRIVING MOTOR FOR VEHICLE - The present invention relates to a resolver of an electric driving motor for vehicle which comprises a rotor, a stator comprising a stator main body which encircles the rotor and teeth which extend from the stator main body to be wound by a coil, a terminal module comprising a terminal end which contacts the coil for an electric connection and a terminal main body which supports the terminal end, and a connector module comprising a connector main body which is detachably coupled to the terminal main body and a lead line which is connected to an outer device and supported by the connector main body and which contacts the terminal end for an electric connection if the connector main body is coupled to the terminal main body, thus simplifying manufacturing process and repairing process and reducing cost. | 10-18-2012 |
20130127451 | VARIABLE RELUCTANCE RESOLVER - The present invention relates to a resolver of an electric driving motor for vehicle which comprises a rotor, a stator comprising a stator main body which encircles the rotor and teeth which extend from the stator main body to be wound by a coil, a terminal module comprising a terminal end which contacts the coil for an electric connection and a terminal main body which supports the terminal end, and a connector module comprising a connector main body which is detachably coupled to the terminal main body and a lead line which is connected to an outer device and supported by the connector main body and which contacts the terminal end for an electric connection if the connector main body is coupled to the terminal main body, thus simplifying manufacturing process and repairing process and reducing cost. | 05-23-2013 |
20150311768 | RESOLVER OF ELECTRIC DRIVING MOTOR FOR VEHICLE - The present invention relates to a resolver of an electric driving motor for vehicle which comprises a rotor, a stator comprising a stator main body which encircles the rotor and teeth which extend from the stator main body to be wound by a coil, a terminal module comprising a terminal end which contacts the coil for an electric connection and a terminal main body which supports the terminal end, and a connector module comprising a connector main body which is detachably coupled to the terminal main body and a lead line which is connected to an outer device and supported by the connector main body and which contacts the terminal end for an electric connection if the connector main body is coupled to the terminal main body, thus simplifying manufacturing process and repairing process and reducing cost. | 10-29-2015 |
Patent application number | Description | Published |
20130256630 | NEAR UV LIGHT EMITTING DEVICE - Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of | 10-03-2013 |
20140197454 | PHOTO DETECTION DEVICE - TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer. | 07-17-2014 |
20150041760 | NEAR UV LIGHT EMITTING DEVICE - Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area. | 02-12-2015 |
20150144874 | UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers. | 05-28-2015 |
20150333218 | UV LIGHT EMITTING DEVICE - A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer. | 11-19-2015 |
20150364319 | METHOD OF FABRICATING A NITRIDE SUBSTRATE - A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer. | 12-17-2015 |
20160064598 | ULTRAVIOLET LIGHT-EMITTING DEVICE - Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm. | 03-03-2016 |
Patent application number | Description | Published |
20090078961 | NITRIDE-BASED LIGHT EMITTING DEVICE - The present invention relates to a nitride-based light emitting device having a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate, wherein an Al | 03-26-2009 |
20090184398 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR DEVICE - Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal. | 07-23-2009 |
20100184273 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR DEVICE - Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal. | 07-22-2010 |
Patent application number | Description | Published |
20080217647 | METHOD OF FORMING NITRIDE SEMICONDUCTOR LAYER ON PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE HAVING THE SAME - A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer. | 09-11-2008 |
20080237570 | LIGHT EMITTING DIODE HAVING WELL AND/OR BARRIER LAYERS WITH SUPERLATTICE STRUCTURE - A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer. | 10-02-2008 |
20130026531 | NON-POLAR LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME - A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure embedded in the lower semiconductor layer may improve the light emitting efficiency by preventing the loss of light in the semiconductor layer, and the photonic crystal structure is used to improve the polarization ratio of the non-polar LED. | 01-31-2013 |
20130134386 | LIGHT EMITTING DIODE HAVING STRAIN-ENHANCED WELL LAYER - An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer. | 05-30-2013 |
20130320301 | LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency. | 12-05-2013 |
20140131729 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate. | 05-15-2014 |
20140138702 | SUBSTRATE RECYCLING METHOD AND RECYCLED SUBSTRATE - Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface. | 05-22-2014 |
20140322899 | SUBSTRATE RECYCLING METHOD - Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate. | 10-30-2014 |
20150069418 | METHOD FOR SEPARATING EPITAXIAL LAYERS AND GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME - The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness. | 03-12-2015 |
20150311384 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern. | 10-29-2015 |
20150318436 | METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS - Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures. | 11-05-2015 |
20150380236 | SUBSTRATE RECYCLING METHOD - Embodiments of the disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate. | 12-31-2015 |
Patent application number | Description | Published |
20120037881 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 02-16-2012 |
20120142134 | METHOD OF FABRICATING LIGHT EMITTING DIODE - Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas. | 06-07-2012 |
20130099201 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 04-25-2013 |
20130248818 | METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N | 09-26-2013 |
20140151713 | METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer. | 06-05-2014 |
20140162437 | METHOD OF GROWING GALLIUM NITRIDE BASED SEMICONDUCTOR LAYERS AND METHOD OF FABRICATING LIGHT EMITTING DEVICE THEREWITH - Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure. | 06-12-2014 |
20140361247 | GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE - Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented. | 12-11-2014 |
20150091047 | METHOD OF GROWING NITRIDE SEMICONDUCTOR, METHOD OF MANUFACTURING TEMPLATE FOR SEMICONDUCTOR FABRICATION AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME - Disclosed are a method of growing a nitride semiconductor, a method of manufacturing a template for semiconductor fabrication and a method of manufacturing a semiconductor light emitting device using the same. The method of manufacturing a semiconductor light emitting device includes: preparing a growth substrate having a defect aggregation region; growing a first nitride semiconductor layer over the growth substrate; growing a second nitride semiconductor layer over the first nitride semiconductor layer; growing a third nitride semiconductor layer over the second nitride semiconductor layer; growing an active layer over the third nitride semiconductor layer; and forming a second conductive type semiconductor layer over the active layer. Accordingly, semiconductor layers grown on the template can have excellent crystallinity. | 04-02-2015 |
20150115223 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge. | 04-30-2015 |
20150221822 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 08-06-2015 |
20150270435 | METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N | 09-24-2015 |
20150380237 | METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer. | 12-31-2015 |