Ching-Pei
Ching-Pei Chen, Shanhua Township TW
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20090274672 | Lactobacillus Isolates Having Anti-Inflammatory Activities and Uses of the Same - Disclosed herein are two | 11-05-2009 |
Ching-Pei Hsieh, Zhudong Township TW
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20150048297 | MEMORY CELL HAVING RESISTANCE VARIABLE FILM AND METHOD OF MAKING THE SAME - A manufacture includes a first electrode having an upper surface, a second electrode having a lower surface directly over the upper surface of the first electrode, a resistance variable film between the first electrode and the second electrode, and a first conductive member on and surrounding an upper portion of the second electrode. | 02-19-2015 |
20150048298 | MEMORY CELL HAVING RESISTANCE VARIABLE FILM AND METHOD OF MAKING THE SAME - A manufacture includes a first electrode having an upper surface and a side surface, a resistance variable film over the first electrode, and a second electrode over the resistance variable film. The resistance variable film extends along the upper surface and the side surface of the first electrode. The second electrode has a side surface. A portion of the side surface of the first electrode and a portion of the side surface of the second electrode sandwich a portion of the resistance variable film. | 02-19-2015 |
20150060750 | Resistance Variable Memory Structure and Method of Forming the Same - A memory structure includes a first dielectric layer, having a first top surface, over a conductive structure. A first opening in the first dielectric layer exposes an area of the conductive structure, and has an interior sidewall. A first electrode structure, having a first portion and a second portion, is over the exposed area of the conductive structure. The second portion extends upwardly along the interior sidewall. A resistance variable layer is disposed over the first electrode. A second electrode structure, having a third portion and a fourth portion, is over the resistance variable layer. The third portion has a second top surface below the first top surface of the first dielectric layer. The fourth portion extends upwardly along the resistance variable layer. A second opening is defined by the second electrode structure. At least a part of a second dielectric layer is disposed in the second opening. | 03-05-2015 |
Ching-Pei Lin US
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20120313249 | SEMICONDUCTOR DEVICE STRUCTURES AND THE SEPARATING METHODS THEREOF - A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures. | 12-13-2012 |
Ching-Pei Lin, Hsinchu City TW
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20140145224 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile. | 05-29-2014 |
20140346544 | Light-Emitting Element Having a Reflective Structure with High Efficiency - A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer. | 11-27-2014 |
Ching-Pei Tseng, Keelung City TW
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20100225234 | Hollow-cathode plasma generator - A hollow-cathode plasma generator includes a plurality of hollow cathodes joined together and connected to a power supply for generating plasma in vacuum. Each of the hollow cathodes includes at least one fillister defined therein, a fin formed on a side of the fillister, an air-circulating tunnel in communication with the fillister and a coolant-circulating tunnel defined therein. The fillister is used to contain working gas. The fin receives negative voltage from the power supply for ionizing the working gas to generate the plasma and spread the plasma in a single direction. The working gas travels into the fillister from the air-circulating tunnel. The coolant-circulating tunnel is used to circulate coolant for cooling the hollow cathode. | 09-09-2010 |