Patent application number | Description | Published |
20090155990 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND METHOD FOR CREATING A LAYOUT THEREOF - A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial layer in a first area over the substrate, the first sacrificial layer being patterned to form in the first area a functioning wiring connected to an element; forming a second sacrificial layer in a second area over the substrate, the second sacrificial layer being patterned to form in the second area a dummy wiring; forming a third sacrificial layer at a side wall of the first sacrificial layer and forming a fourth sacrificial layer at a side wall of the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer being separated; forming a concavity by etching the insulation layer to be processed using the third sacrificial layer and the fourth sacrificial layer as a mask; and filling a conductive material in the concavity. | 06-18-2009 |
20090186424 | PATTERN GENERATION METHOD, COMPUTER-READABLE RECORDING MEDIUM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern generation method includes: acquiring a first design constraint for first patterns to be formed on a process target film by a first process, the first design constraint using, as indices, a pattern width of an arbitrary one of the first patterns, and a space between the arbitrary pattern and a pattern adjacent to the arbitrary pattern; correcting the first design constraint in accordance with pattern conversion by the second process, and thereby acquiring a second design constraint for the second pattern which uses, as indices, two patterns on both sides of a predetermined pattern space of the second pattern; judging whether the design pattern fulfils the second design constraint; and changing the design pattern so as to correspond to a value allowed by the second design constraint when the design constraint is not fulfilled. | 07-23-2009 |
20100081265 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method including: forming a first film on a target film; forming resist patterns on the first film; processing the first film with the resist patterns to form first patterns including: periodic patterns; and aperiodic patterns; removing the resist patterns; forming a second film over the target film; processing the second film to form second side wall patterns on side walls of the first patterns; removing the periodic patterns; and processing the target film with the aperiodic patterns and the second side wall patterns, thereby forming a target patterns including: periodic target patterns; aperiodic target patterns; and dummy patterns arranged between the periodic target patterns and the aperiodic patterns and arranged periodically with the periodic target patterns. | 04-01-2010 |
20100314771 | SEMICONDUCTOR DEVICE INCLUDING AN IMPROVED LITHOGRAPHIC MARGIN - A semiconductor device includes first to third lines. The second line has a width equal to the first line. The second line is arranged with a space equal to the width from the first line, and partially has a gap. The third line is connected to one end of the first line and to a side of one end of the second line. | 12-16-2010 |
20120241834 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes interconnects extending from a element formation area to the drawing area, and connected with semiconductor elements in the element formation area and connected with contacts in the drawing area. The interconnects are formed based on a pattern of a (n+1) | 09-27-2012 |
20130055172 | ORIGINAL PLATE EVALUATION METHOD, COMPUTER READABLE STORAGE MEDIUM, AND ORIGINAL PLATE MANUFACTURING METHOD - According to one embodiment, an original plate evaluation method is disclosed. The original plate includes a substrate and N patterns differing from one another in shape. The method includes selecting N1 patterns from the N patterns based on first criterion, obtaining measured values for the N1 patterns, performing a decision whether the obtained measured values satisfy first specification value, selecting N2 patterns from the N patterns based on second criterion, predicting shapes of transfer patterns corresponding to N2 patterns, performing a decision whether the predicted shapes satisfy second specification value, and evaluating the plate based on the decision. | 02-28-2013 |
20130164934 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND METHOD FOR CREATING A LAYOUT THEREOF - A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial layer in a first area over the substrate, the first sacrificial layer being patterned to form in the first area a functioning wiring connected to an element; forming a second sacrificial layer in a second area over the substrate, the second sacrificial layer being patterned to form in the second area a dummy wiring; forming a third sacrificial layer at a side wall of the first sacrificial layer and forming a fourth sacrificial layer at a side wall of the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer being separated; forming a concavity by etching the insulation layer to be processed using the third sacrificial layer and the fourth sacrificial layer as a mask; and filling a conductive material in the concavity. | 06-27-2013 |
20140017887 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes interconnects extending from a element formation area to the drawing area, and connected with semiconductor elements in the element formation area and connected with contacts in the drawing area. The interconnects are formed based on a pattern of a (n+1) | 01-16-2014 |
20150041986 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND METHOD FOR CREATING A LAYOUT THEREOF - A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial layer in a first area over the substrate, the first sacrificial layer being patterned to form in the first area a functioning wiring connected to an element; forming a second sacrificial layer in a second area over the substrate, the second sacrificial layer being patterned to form in the second area a dummy wiring; forming a third sacrificial layer at a side wall of the first sacrificial layer and forming a fourth sacrificial layer at a side wall of the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer being separated; forming a concavity by etching the insulation layer to be processed using the third sacrificial layer and the fourth sacrificial layer as a mask; and filling a conductive material in the concavity. | 02-12-2015 |