Chiharu

Chiharu Azuma, Hyogo JP

Patent application number	Description	Published
20090019776	CABLE GUIDE AND SLIDING DOOR DRIVE MECHANISM USING THE SAME - The present invention provides a cable guide for changing direction of an inner cable for operating a sliding door of a car, comprising a pulley casing having a box shape with an opening at its top and a guide recess at an inner side of its bottom, a slider provided with a sliding plate slidably guided by means of the guide recess of the pulley casing and a shaft extending upward from a top of the sliding plate, a pulley rotatably supported by the shaft of the slider, an urging member urging the slider along the guide recess toward a direction for giving tension to the inner cable, and a casing cover covering the opening of the pulley casing, and being configured so that an inner side of the casing cover and a top face of the shaft are slidable each other.	01-22-2009

Chiharu Azuma, Takarazuka-Shi JP

Patent application number	Description	Published
20080244982	CABLE GUIDE - [Problem to be solved] To provide a cable guide which has a simple structure and can be easily assembled.	10-09-2008

Chiharu Hiyori, Kanagawa JP

Patent application number	Description	Published
20130188072	EYEPIECE OPTICAL SYSTEM AND IMAGING DEVICE - There is provided an eyepiece optical system including a lens, a surface nearest to an observer side of the lens disposed nearest to the observer side being formed in a convex shape on the observer side, and the eyepiece optical system satisfying a conditional expression (1) |RL/DH|<1.7, where RL is a radius of curvature of the surface nearest to the observer side, and DH is a shortest distance in a radial direction from an optical axis to an edge surface of the lens nearest to the observer side.	07-25-2013

Chiharu Ichikawa, Tokyo JP

Patent application number	Description	Published
20130222016	Digital PLL Circuit and Clock Generator - A circuit according to the present invention includes: an oscillator; an divider; a time-to-digital converter comparing the phase and frequency of a reference clock signal REF from the divider with an internal clock signal and outputting digital data D	08-29-2013

Chiharu Ito, Nagano JP

Chiharu Ito, Tokyo JP

Patent application number	Description	Published
20120156335	CAN BOTTLES IN A BOTTOMED, CYLINDRICAL CONFIGURATION, AND CAN PRODUCTS FILLED UP THEREIN WITH A SOFT OR HARD DRINK - A can bottle in a bottomed, cylindrical configuration, which is constructed of a metal material has a cylindrical side wall and a bottom joined to and integrated with the side wall. The said bottom includes domed portions that flex and extend downwardly and outwardly, and flexed support legs formed by extending a plurality of peripheral edge sites of the domed portions arranged at uniform angles further downwardly and outwardly in a flexed fashion. The bottom satisfies a condition: 1.04≦R	06-21-2012
20150158624	CAN BOTTLES IN A BOTTOMED, CYLINDRICAL CONFIGURATION, AND CAN PRODUCTS FILLED UP THEREIN WITH A SOFT OR HARD DRINK - A can bottle in a bottomed, cylindrical configuration, which is constructed of a metal material has a cylindrical side wall and a bottom joined to and integrated with the side wall. The bottom includes domed portions that flex and extend downwardly and outwardly, and flexed support legs formed by extending a plurality of peripheral edge sites of the domed portions arranged at uniform angles further downwardly and outwardly in a flexed fashion. The bottom satisfies a condition: 1.04≦R3/D≦1.67 where R3 (mm) is the radius of curvature that defines the curvature of the domed portion at the bottom, and D (mm) is the diameter of the cylindrical side wall. In addition ribs are formed at possible grounding sites of the flexed support legs at the bottom in a direction crossing the radial direction.	06-11-2015

Chiharu Ito, Kuwana JP

Patent application number	Description	Published
20140112608	RETAINER MADE OF SYNTHETIC RESIN FOR USE IN BALL BEARING AND BALL BEARING - A retainer of synthetic resin is provided in such a way that abnormal heat generation in a bearing and wear of the retainer due to interference between the retainer and balls are less likely to arise while the bearing is rotating at a high speed. A retainer (	04-24-2014

Chiharu Kawaguchi, Mobara JP

Patent application number	Description	Published
20090102766	DISPLAY DEVICE - The present invention prevents a TFT liquid crystal display device from deteriorating its image quality due to the insufficiency of voltage written through TFTs. There is disclosed a display device that includes a display panel in which the plural pixel electrodes are positioned between two neighboring video signal lines and arranged in the extending direction of the video signal lines, a pixel electrode connected to one of the two neighboring video signal lines through a TFT and a pixel electrode connected to the other video signal line through a TFT being alternately arranged; and a correction circuit that compares the tone of video data to be written into one of the plural pixel electrodes against the tone of video data to be written into a preceding pixel electrode that is connected through a TFT to the video signal line, to which the one of the plural pixel electrodes is also connected through a TFT, and placed one position toward a signal input end of the video signal line as compared to the one of the plural pixel electrodes, and corrects the video data to be written into the one of the plural pixel electrodes.	04-23-2009

Chiharu Kimura, Miyagi JP

Patent application number	Description	Published
20130061799	MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL - A method of manufacturing a group	03-14-2013
20130062660	GROUP 13 NITRIDE CRYSTAL AND SUBSTRATE THEREOF - A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.	03-14-2013
20130064749	GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE - A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.	03-14-2013
20130065010	GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD - A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.	03-14-2013
20130065036	GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL, AND GALLIUM NITRIDE CRYSTAL - A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.	03-14-2013
20130243680	GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE - A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.	09-19-2013
20140077218	GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND METHOD OF MANUFACTURING GROUP 13 NITRIDE CRYSTAL - A group 13 nitride crystal having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations in a cross section parallel to a c-axis is 10	03-20-2014
20150247257	GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD - A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.	09-03-2015

Chiharu Kimura, Kakamigahara-Shi JP

Patent application number	Description	Published
20110021545	NOVEL PREPARATION FOR EXTERNAL USE - A compound represented by the formula (I), salt thereof, or hydrate thereof has an excellent anti-pruritic effect and an excellent effect in terms of metabolism. The topical formulation of the present invention has excellent skin absorption properties of the compound represented by the formula (I), salt thereof, or hydrate thereof. Furthermore, the topical formulation of the present invention is excellent in stability because ingredients are hardly bled after long-term storage.	01-27-2011

Chiharu Maeda, Higashiosaka-Shi JP

Patent application number	Description	Published
20090306383	Method for Producing 2-(4-Methyl-2-Phenylpiperazin-1-Yl)Pyridine-3-Methanol - The present invention provides a method for producing 2-(4-methyl-2-phenylpiperazin-1-yl)pyridine-3-methanol, and this method includes the step of catalytically reducing 2-(4-methyl-2-phenylpiperazin-1-yl)-3-cyanopyridine in the presence of a partially deactivated palladium catalyst in an aqueous acid solution.	12-10-2009

Chiharu Maeda, Tokyo JP

Patent application number	Description	Published
20100021623	LITHIUM DISPENSER FOR LITHIUM EVAPORATION - Mixtures are provided of lithium salts with reducing agents for lithium evaporation. The mixtures may be particularly used in the manufacture of electroluminescent organic displays. Lithium dispensers based on the use of these mixtures are also provided.	01-28-2010

Chiharu Matsumoto, Niiza-Shi JP

Patent application number	Description	Published
20100244800	SWITCHING POWER SUPPLY UNIT AND CONTROL CIRCUIT FOR SAME - There is provided a switching power supply unit having an overcurrent detection circuit capable of automatically selecting either a current detection method using an resistor or a current detection method using an external current detection resistor and of performing optimized overcurrent protection depending on applications. In the control circuit of the switching power supply unit for detecting a current flowing through a high-side switch as a current detection signal and comparing it with an overcurrent detection threshold value to detect an overcurrent and turning off the high-side switch to protect the switching power supply unit, a first current detection terminal connected to a power supply side terminal of the high-side switch or to a load side terminal of the high-side switch and a temperature compensating means to switch for temperature compensation on an overcurrent detection threshold value or on a current detection signal are provided.	09-30-2010

Chiharu Matsunaga, Shizuoka-Shi JP

Patent application number	Description	Published
20080253000	VEHICLE LAMP - A vehicle lamp includes a lens formed from a resin material and a lens holding member for holding the lens formed from the resin material. The lens and the lens holding member are adapted to be joined together through laser welding. A joining annular portion is provided on the lens holding member to which an outer circumferential portion of the lens is joined. A plurality of welding portions and a plurality of stopper portions are provided on the joining annular portion. The plurality of welding portions project towards the lens and are positioned apart from each other in a circumferential direction. The plurality of stopper portions project towards the lens, are positioned apart from each other in the circumferential direction, and contact the outer circumferential portion of the lens when the lens is joined to the joining annular portion.	10-16-2008

Chiharu Minami, Kyoto JP

Patent application number	Description	Published
20140292585	ANTENNA AND WIRELESS COMMUNICATION DEVICE - An antenna includes a dielectric base and a radiation electrode formed in the surface of the dielectric base. The radiation electrode includes a side surface electrode formed in the side surface of the dielectric base and a top surface electrode formed in the top surface of the dielectric base. A first point and a second point in the middle of an electrical length leading from a power feeding end of the radiation electrode to an open end are adjacent to each other, and in this adjacent portion, capacitance is formed between the first point and the second point. In addition, a third point and a fourth point in the middle of an electrical length are adjacent to each other, and in this adjacent portion, capacitance is formed between the third point and the fourth point.	10-02-2014

Chiharu Miyazaki, Tokyo JP

Patent application number	Description	Published
20120309230	CABLE COUPLING CONNECTOR - A cable coupler including an external cylinder mechanism having an inner conductor for electrically connecting the inner conductor itself to the outer conductors of the shielded cables, an outer conductor having a larger diameter than the inner conductor, a gap portion disposed between the inner conductor and the outer conductor, and capacitors arranged in the gap portion, for electrically connecting between the outer conductor and the inner conductor, an inner potion of the external cylinder mechanism being able to be opened and closed along a longitudinal direction, an internal coupling mechanism placed inside the inner conductor and having connecting pins for holding the core wires of the shielded cables, for electrically connecting between the core wires of the shielded cables, and a base for holding the external cylinder mechanism and for electrically connecting the external cylinder mechanism to an external conductor.	12-06-2012

Chiharu Nakahara, Mie JP

Patent application number	Description	Published
20150325398	CONTACT DEVICE - The contact device includes an armature, a driver, a fixed contact, a movable contact, a contact spring, and a card. The driver drives the armature. The movable contact is to be in contact with and separate from the fixed contact. The contact spring is for holding the movable contact so as to allow the movable contact to be in contact with and separate from the fixed contact. The card interconnects the armature and the contact spring. The card is made of resilient material and fixed to each of the armature and the contact spring.	11-12-2015

Chiharu Nakajima, Kyoto-Shi JP

Patent application number	Description	Published
20120276811	GARMENT WITH CUP SECTIONS	11-01-2012

Chiharu Nakajima, Tokyo JP

Patent application number	Description	Published
20080309423	VOLTAGE CONTROL OSCILLATOR AND OSCILLATION CONTROL SYSTEM - A voltage control oscillator has a first MOS transistor having one end connected to a first potential; a second MOS transistor having one end connected to the first potential, a gate connected to an other end of the first MOS transistor, and an other end connected to a gate of the first MOS transistor; a first varactor having one end connected to the other end of the first MOS transistor, an other end connected to the other end of the second MOS transistor, and a capacitance changing with a first control voltage; a first inductor having one end connected to the one end of the first varactor; a second inductor having one end connected to the other end of the first varactor; a second varactor having one end connected to an other end of the first inductor, an other end connected to an other end of the second inductor, and a capacitance changing with a second control voltage; a third inductor connected between the one end of the second varactor and a second potential; and a fourth inductor connected between the other end of the second varactor and the second potential.	12-18-2008

Chiharu Nakajima, Saitama-Shi JP

Patent application number	Description	Published
20090103945	TONER CARTRIDGE - The present invention provides an exchangeable toner cartridge which can be attached to or detached from an apparatus main body. The toner cartridge includes the toner transfer member which is provided along a longitudinal direction of the toner cartridge and which can rotate. At the first range of the upstream side in a toner transfer direction the toner transfer member is formed into a substantially spiral shape, and at the second range of the downstream side in the toner transfer direction on a side of a toner supply port, toner transfer member has a shape different from that of the first range.	04-23-2009

Chiharu Nakamura, Kitakyushu-Shi JP

Patent application number	Description	Published
20160067732	APPLICATION DEVICE, APPLICATION ROBOT, AND APPLICATION METHOD - An application device includes: a discharger having a discharge port configured to discharge an application material; a first supporter movably supporting the discharger around a position of the discharge port; and a first driver configured to move the discharger supported by the first supporter. An application method, includes: making a central axis of a discharge port coaxial with any rotation axis in an arm portion of an application robot, the discharge port being configured to discharge an application material; and applying the application material to an applied surface while moving a discharger having the discharge port around a position of the discharge port.	03-10-2016

Chiharu Nakazawa, Kawasaki-Shi, Kanagawa JP

Patent application number	Description	Published
20150314765	Brake Device - The present invention provides a brake device that can improve the pressure-increasing response of wheel cylinder hydraulic pressure. The invention is provided with: a master cylinder (	11-05-2015
20150336553	Electromagnetic Valve and Brake Device - The present invention provides an electromagnetic valve capable of achieving a stable flow rate while suppressing power consumption and a brake device with such an electromagnetic valve. The electromagnetic valve according to the present invention has a valve element axially movable by the action of an electromagnetic force generated upon energization of a coil, a first elastic member that biases the valve element in a valve opening direction, and a second elastic member that biases in a direction that counteracts the biasing of the first elastic member, wherein the first elastic member is set with a set load larger than that of the second elastic member.	11-26-2015

Chiharu Odane, Osaka JP

Patent application number	Description	Published
20110165449	BATTERY SEPARATOR AND METHOD FOR PRODUCING THE SAME, AND LITHIUM ION SECONDARY BATTERY AND METHOD OF PRODUCING THE SAME - A battery separator (	07-07-2011

Chiharu Odane, Ibaraki-Shi JP

Patent application number	Description	Published
20100273260	CELL CULTURE SUBSTRATE AND PROCESS FOR PRODUCING THE SAME AND METHOD FOR CULTURING CELLS - The present invention relates to a cell culture substrate in which a polymer chain having a hydrophilic skeleton is grafted onto a surface of polystyrene or poly(ε-caprolactone) having a water contact angle of from 75° to 100°. This cell culture substrate has excellent efficiency of cell culture without the necessity of immobilization and adsorption of a cell adhesion substance on a surface of a substrate.	10-28-2010

Chiharu Omori, Utsunomiya-Shi JP

Patent application number	Description	Published
20150327745	CLEANING SHEET AND MANUFACTURING METHOD THEREFOR - A cleaning sheet (	11-19-2015

Chiharu Omori, Tochigi JP

Patent application number	Description	Published
20090049633	Cleaning Article - A cleaning article	02-26-2009
20100154156	"Cleaning Article, Method of Fluffing Cleaning Article, and Method of Producing Cleaning Article" - A cleaning article	06-24-2010

Chiharu Ota, Kawasaki-Shi JP

Patent application number	Description	Published
20150034973	SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer provided on the first SiC epitaxial layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the concentration of the element A in the combination(s) being higher than 0.33 but lower than 1.0; n-type first and second SiC regions provided in the surface of the second SiC epitaxial layer; a gate insulating film; a gate electrode; a first electrode provided on the second SiC region; and a second electrode provided on the opposite side from the first electrode.	02-05-2015

Chiharu Ota, Kawasaki JP

Patent application number	Description	Published
20150034974	SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer on the first SiC epitaxial layer containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the element A being higher than 0.33 but lower than 1.0; a surface region at the surface of the second SiC epitaxial layer containing the element A at a lower concentration than in the second SiC epitaxial layer, the ratio being higher than in the second SiC epitaxial layer; n-type first and second SiC regions; a gate insulating film; a gate electrode; a first electrode; and a second electrode.	02-05-2015
20150060883	SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second parts. The second semiconductor region includes silicon carbide, is of a second conductivity type and is provided on the second part. The third semiconductor region includes silicon carbide, is of the first conductivity type and is provided on the second semiconductor region. The first electrode is provided on the first part and the third semiconductor region. The first insulating section is provided on the third semiconductor region and juxtaposed with the first electrode. The second insulating section is provided between the first electrode and the first part and between the first electrode and the first insulating section.	03-05-2015
20150060884	SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a first electrode. The first semiconductor region is of a first conductivity type. The second semiconductor region is provided on the first semiconductor region, and is of a second conductivity type. The third semiconductor region is provided on the second semiconductor region, and is of the second conductivity type. The third semiconductor region contains a first impurity of the first conductivity type and a second impurity of the second conductivity type, and satisfies 1	03-05-2015
20150060885	SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes an i-type or a p-type first diamond semiconductor layer, an n-type second diamond semiconductor layer provided on the first diamond semiconductor layer, a mesa structure and an n-type first diamond semiconductor region provided on the side surface. The mesa structure includes the first diamond semiconductor layer, the second diamond semiconductor layer, a top surface with a plane orientation of ±10 degrees or less from a {100} plane, and a side surface inclined by 20 to 90 degrees with respect to a direction of <011>±20 degrees from the {100} plane. The first diamond semiconductor region is in contact with the second diamond semiconductor layer and has an n-type impurity concentration lower than an n-type impurity concentration of the second diamond semiconductor layer.	03-05-2015
20150069416	SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The first semiconductor region includes silicon carbide. A conductivity type of the first semiconductor region is a first conductivity type. The second semiconductor region includes silicon carbide. A conductivity type of the second semiconductor region is a second conductivity type. The third semiconductor region includes silicon carbide. A conductivity type of the third semiconductor is the second conductivity type. The third semiconductor region is provided between the first semiconductor region and the second semiconductor region. As viewed in a direction connecting the first semiconductor region and the second semiconductor region, an area of an overlapping region of the second semiconductor region and the third semiconductor region is smaller than an area of an overlapping region of the first semiconductor region and the second semiconductor region.	03-12-2015
20150087125	METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device of an embodiment includes: preparing a substrate; and growing a p-type SiC single-crystal layer on the surface of the substrate from a liquid phase that contains Si (silicon), C (carbon), a p-type impurity, and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a first combination that is at least one combination selected from Al (aluminum) and N (nitrogen), Ga (gallium) and N (nitrogen), and In (indium) and N (nitrogen), and/or a second combination of B (boron) and P (phosphorus), the ratio of the concentration of the element D to the concentration of the element A in the first or second combination being higher than 0.33 but lower than 1.0.	03-26-2015
20150270128	MANUFACTURING METHOD OF SiC EPITAXIAL SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A manufacturing method of an SiC epitaxial substrate of an embodiment includes performing a first and a second process alternately to form an n type SiC layer, the first process forming a first SiC layer with an epitaxial growth process by using a first source gas containing an n type impurity, and the second process forming a second SiC layer with an epitaxial growth process by using a second source gas containing the n type impurity, the second source gas having a higher atomic ratio between C (carbon) and Si (silicon) (C/Si) than that of the first source gas, a thickness of the second SiC layer being smaller than a thickness of the first SiC layer.	09-24-2015

Chiharu Ota, Kanagawa-Ken JP

Patent application number	Description	Published
20140034965	SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device, includes: a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, an impurity concentration of the second semiconductor region being lower than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type provided on the second semiconductor region; and a fourth semiconductor region provided on the third semiconductor region or in a portion of the third semiconductor region. A lattice strain of the fourth semiconductor region is greater than a lattice strain of the third semiconductor region.	02-06-2014
20140183177	SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a first electrode and a heat generation portion. The first semiconductor region includes n-type silicon carbide. The second semiconductor region is provided on a portion of the first semiconductor region. The second semiconductor region includes p-type silicon carbide. The first electrode provided on the first semiconductor region and the second semiconductor region. The heat generation portion is provided on the second semiconductor region.	07-03-2014
20140209927	SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR SUBSTRATE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element.	07-31-2014
20140252378	SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor substrate includes a substrate and a semiconductor layer. The substrate has a first surface and containing a silicon carbide. The semiconductor layer is provided on the first surface. The semiconductor layer has a thickness of H centimeters in a perpendicular direction to the first surface. The semiconductor layer contains an epitaxially grown silicon carbide with an off angle θ provided relative to a (0001) face of the substrate. The semiconductor layer includes k pieces of basal plane dislocation per one square centimeter viewed in the perpendicular direction. When S=(½)×H	09-11-2014
20140286063	RECTIFIER AND METHOD FOR CONTROLLING THE SAME - According to one embodiment, a rectifier includes a rectifying device, a control element and a controller. The control element is serially connected to the rectifying device. The control element has a resistance value that changes according to a control signal. The controller generates the control signal according to a change in a current flowing in the rectifying device.	09-25-2014
20160005808	SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device, includes: a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, an impurity concentration of the second semiconductor region being lower than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type provided on the second semiconductor region; and a fourth semiconductor region provided on the third semiconductor region or in a portion of the third semiconductor region. A lattice strain of the fourth semiconductor region is greater than a lattice strain of the third semiconductor region.	01-07-2016

Chiharu Sasaki, Tokyo JP

Patent application number	Description	Published
20100289042	SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.	11-18-2010
20110175057	SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.	07-21-2011
20110198634	SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×10	08-18-2011
20120228658	SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×10	09-13-2012
20150143911	PHYSICAL/CHEMICAL SENSOR AND METHOD FOR MEASURING SPECIFIC SUBSTANCE - [Problems to be solved]	05-28-2015

Chiharu Satoh, Isehara-Shi JP

Patent application number	Description	Published
20110092555	Thiazolidinedione compound - A compound which is 5-{4-[(6-methoxy-1-methyl-1H-benzimidazol-2-yl)methoxy]benzyl}thiazolidine-2,4-dione hydrochloride, in crystal form wherein a powder x-ray diffraction pattern obtained by irradiation with a Cu Kα line shows main peaks at interplanar spacings d=14.29, 7.12, 5.34, 4.97, 4.74, 3.95, 3.85, 3.75, 3.55, 3.51, 3.15, 2.84, 2.76, 2.52 and 2.37.	04-21-2011

Chiharu Shimizu, Wako JP

Patent application number	Description	Published
20110307158	APPARATUS TO CONTROL INTERNAL COMBUSTION ENGINE, METHOD FOR CONTROLLING INTERNAL COMBUSTION ENGINE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - An apparatus to control an internal combustion engine includes a cylinder operation controller configured to switch a cylinder operation between an all-cylinder operation and a cylinder deactivation operation. A deactivation time parameter integrating device is configured to integrate a deactivation time parameter indicating a deactivation time of the part of the plurality of cylinders to calculate an integrated deactivation time parameter. An inhibiting device is configured to inhibit the cylinder deactivation operation if the integrated deactivation time parameter calculated by the deactivation time parameter integrating device is larger than or equal to a reference value. The deactivation time parameter integrating device holds the integrated deactivation time parameter as an initial value after an operation of the internal combustion engine is stopped. The deactivation time parameter integrating device resumes integrating the deactivation time parameter using the initial value when the internal combustion engine restarts.	12-15-2011

Chiharu Takagi, Toyama-Shi JP

Patent application number	Description	Published
20130281529	EYE DROP PREPARATION COMPRISING LATANOPROST - It is intended to provide an eye drop preparation capable of preventing not only degradation of latanoprost in water but also adsorption of latanoprost onto a plastic container so that a decrease in latanoprost content thereof is satisfactorily prevented. The eye drop preparation contains an ophthalmic solution composition containing components (A) and (B) and packed in a plastic container: (A) latanoprost; and (B) a nonionic surfactant.	10-24-2013

Chiharu Takagi, Toyama JP

Patent application number	Description	Published
20100120908	EYE DROP PREPARATION COMPRISING LATANOPROST - Disclosed is an eye drop preparation comprising latanoprost, which is characterized in that the degradation of latanoprost in water can be prevented, the adsorption of latanoprost onto a plastic container can be prevented, and therefore the decrease in the latanoprost content can be prevented satisfactorily. The eye drop preparation comprises an eye drop composition comprising the following components (A)-(B) and packed in a plastic container: (A) latanoprost; and (B) a nonionic surfactant.	05-13-2010

Chiharu Takeda, Iwaki-City JP

Patent application number	Description	Published
20100299143	Voice Recognition Dictionary Generation Apparatus and Voice Recognition Dictionary Generation Method - A voice recognition dictionary generation apparatus and method for suppressing reduction of processing speed at the time of updating. The apparatus includes an input unit configured to receive a text subjected to voice recognition, a storage unit configured to store the text with respect to each file of a predetermined item, a reading data generation unit configured to analyze the text and generate a reading data, and a voice recognition dictionary configured to include content dictionaries that store therein the reading data of the text with respect to each file of the predetermined item. When the file of the predetermined item including the text stored in the storage unit is updated, a control unit detects a total number of the content dictionaries, and when the total number is smaller than a predetermined limit, the control unit generates the content dictionaries with respect to each updated predetermined item.	11-25-2010

Chiharu Takeuchi, Azumino-Shi JP

Patent application number	Description	Published
20110320297	PREPAID CARD PROCESSING DEVICE, PREPAID CARD PROCESSING SYSTEM, AND PROCESSING METHOD FOR A PREPAID CARD DEVICE - A processing system for managed prepaid cards can be introduced at low cost without requiring changing POS terminals. An expansion board is used connected to an activation server that activates prepaid cards, a barcode scanner, and a POS terminal. The expansion board has a product information acquisition unit that acquires product information from the barcode scanner; a product information discrimination unit that determines if the acquired product information is for a managed prepaid card that requires activation; a product information conversion unit that converts the product information to product information data that can be interpreted by the POS terminal; a product information data output unit that outputs the product information data to the POS terminal; and an activation request unit that sends the product information with an activation request to the activation request for validation.	12-29-2011
20120030001	RELAY DEVICE, CONTROL METHOD FOR A RELAY DEVICE, AND CONTROL METHOD FOR A COUPON ISSUING SYSTEM - A relay device, expansion board, coupon issuing system, control method for a relay device, and a program enable adding a coupon issuing function at a low cost. A coupon-issuing control unit that generates and outputs coupon print data corresponding to receipt print data to a printer provides a relay device that has an expiration information acquisition unit that acquires expiration information corresponding to a product code, a coupon-issuing period calculation unit that calculates a coupon-issuing period from the expiration information, a coupon print data generating unit that generates coupon print data when the current date and time is in the coupon-issuing period, and a coupon print data output unit that outputs coupon print data to the printer.	02-02-2012

Chiharu Tanabe, Toyama JP

Patent application number	Description	Published
20110275797	N-ACYL ANTHRANILIC ACID DERIVATIVE OR SALT THEREOF - An N-acyl anthranilic acid derivative represented by general formula (1) or a salt thereof is useful for prevention or treatment of diseases associated with excessive production of collagen. (In the formula, R	11-10-2011

Chiharu Tsukamoto, Saitama JP

Patent application number	Description	Published
20090209860	Ultrasonic probe - In an ultrasonic probe of the present invention, a probe main body that comprises a flat shaped piezoelectric element group having a plurality of strip shaped piezoelectric elements arranged in a line in the major axis direction, which is the crosswise direction of the piezoelectric elements, is formed and housed within a container main body and sealed therein with a cover. The ultrasonic probe is characterized in that, in order to mechanically and linearly scan the probe main body in the minor axis direction, which is the lengthwise direction of the piezoelectric elements, the probe main body is linearly reciprocated and mechanically scanned in the minor axis direction, by an endless belt that is driven by a drive source via another endless belt linearly in the minor axis direction, while being guided by a pair of linear guides. As a result, sufficient movement stroke of the probe main body in the minor axis direction can be ensured, and by means of a movement mechanism comprising the endless belt, the probe main body can be reciprocated in the minor axis direction to the fullest extent between the inner walls of a sealed container.	08-20-2009

Chiharu Ueda, Kakogawa-Shi JP

Patent application number	Description	Published
20130298708	POWER TRANSMISSION DEVICE FOR VEHICLE - A power transmission device for a vehicle includes a casing mounted on a vehicle, a rotational shaft supported in the casing and rotated by an engine, first and second speed changing shafts, supported in the casing and changing a speed of rotation of the rotational shaft, a first speed clutch mechanism and a second speed clutch mechanism provided between the rotational shaft and the first and second speed changing shafts, respectively, and an output shaft outputting rotation of one speed changing shaft selected by each of the clutch mechanisms. A first brake device applying a braking force to the first speed changing shaft and a second brake device applying the braking force to the second speed changing shaft are provided in the casing.	11-14-2013