Patent application number | Description | Published |
20100201477 | CHIP RESISTOR AND METHOD FOR MAKING THE SAME - The present invention relates to a chip resistor and method for making the same. The chip resistor includes a substrate, a pair of bottom electrodes, a resistive film, a pair of main upper electrodes, a first protective coat, a pair of barrier layers, a second protective coat, a pair of side electrodes and at least one plated layer. The first protective coat is disposed over the resistive film, and covers part of the main upper electrodes. The barrier layers are disposed on the main upper electrodes, and cover part of the first protective coat. The second protective coat is disposed on the first protective coat, and covers part of the barrier layers. The plated layers cover the barrier layers, the bottom electrodes and the side electrodes. As a result, the chip resistor features high corrosion resistance. | 08-12-2010 |
20110089025 | METHOD FOR MANUFACTURING A CHIP RESISTOR HAVING A LOW RESISTANCE - The present invention relates to a method for manufacturing a chip resistor having a low resistance. The method includes the following steps: (a) providing a substrate having a top surface; (b) sputtering a conducting layer directly on the top surface of the substrate, so that the conducting layer and the substrate contact each other, wherein the material of the conducting layer comprises nickel or copper; and (c) plating at least one metal layer directly on the conducting layer, so that the metal layer and the conducting layer contact each other, wherein the material of the metal layer comprises nickel or copper, and the conducting layer and the metal layer provide a resistive layer. As a result, the resistive layer has a precise pattern, and the duration of sputtering is reduced, so the yield rate and the efficiency are improved and the manufacturing cost is cut down. | 04-21-2011 |
20110234365 | CHIP RESISTOR HAVING LOW RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a chip resistor having low resistance and a method for manufacturing the same. The chip resistor includes a substrate, a resistive layer, a pair of conducting layers and at least one protective layer. The substrate has a first surface. The resistive layer is disposed on the first surface of the substrate. The conducting layers are disposed adjacent to the first surface of the substrate. The at least one protective layer is disposed on the resistive layer or the conducting layers. As a result, the resistive layer has a precise pattern, and the duration of sputtering is reduced, thereby improving yield rate and efficiency while reducing manufacturing cost. | 09-29-2011 |
Patent application number | Description | Published |
20090114940 | Light-Emitting Device - The invention provides a light-emitting device, comprising a light-emitting element and a surface plasmon coupling element connected to the light-emitting element. In an embodiment of the invention, the surface plasmon coupling element comprises a dielectric layer connected to the light-emitting element and a metal layer on the dielectric layer. In another embodiment of the invention, the light-emitting device is a light-emitting diode, comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer, and a surface plasmon coupling element adjacent to the n-type semiconductor layer. In a further embodiment of the invention, a current spreading layer on a second type semiconductor layer of the light-emitting device includes a plurality of strip-shaped structures, and the surface plasmon coupling element is disposed on the current spreading layer and filled into the gap between the strip-shaped structures of the current spreading layer. | 05-07-2009 |
20090115997 | MEASUREMENT SYSTEMS AND METHODS FOR OXYGENATED HEMOGLOBIN SATURATION LEVEL - Measurement system and methods for measuring oxygenated hemoglobin saturation level are provided. Light is transmitted to test blood and a reference mirror. The reference mirror provides a first reflected light beam, and backscattered light from different depths of the test blood generates a second reflected light beam. An interfered light signal is generated by light interference of the first and second reflected light beams. According to the interfered light signal, a first light decay constant for a first light wavelength range and a second light decay constant for a second light wavelength range are obtained according to the interfered light signal. A decay ratio of the first light decay constant to the second light decay constant is obtained. Oxygenated hemoglobin saturation level of the test blood is obtained according to the decay ratio. | 05-07-2009 |
20100103430 | METHOD FOR ANALYZING MUCOSA SAMPLES WITH OPTICAL COHERENCE TOMOGRAPHY - A method for analyzing mucosa structure with optical coherence tomography (OCT) is provided, and includes: (a) scanning a mucosa sample with optical coherence tomography; (b) choosing a lateral range from a two- or three-dimensional OCT image and analyzing all the A-scan intensity profiles in the lateral range; (c) calculating three indicators in each A-scan intensity profile, including the standard deviation for a certain depth range below the sample surface, the exponential decay constant of the spatial-frequency spectrum and the epithelium thickness under the condition that the basement membrane is identifiable; and (d) using the three indicators of each A-scan intensity profile within the lateral range to analyze the mucosa structure. | 04-29-2010 |
20100314606 | LIGHT-EMITTING DEVICE - A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm. | 12-16-2010 |
20110013192 | LOCALIZED SURFACE PLASMON RESONANCE SENSOR AND FABRICATION METHOD THEREOF - A method for forming a localized surface plasmon resonance (LSPR) sensor is disclosed, including providing a substrate, forming a metal thin film on the substrate and irradiating the metal thin film with a laser to form a plurality of metal nanoparticles, wherein the metal nanoparticles have a fixed orientation. | 01-20-2011 |
20120070922 | METHOD FOR FORMING LIGHT EMITTING DEVICE - The invention provides a method for forming a light emitting device. A first substrate is provided. A plurality of patterned masks is formed on the first substrate, or on a semiconductor epitaxial layer grown on the first substrate, or the first substrate is etched to form a plurality of trenches, followed by performing an epitaxial lateral overgrowth process to grow an epitaxy layer over the first substrate. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical etching process is performed to lift off the first substrate from the epitaxy layer. | 03-22-2012 |
20130262928 | DEBUGGING DEVICE AND METHOD FOR PERFORMING A DEBUGGING PROCESS TO A TARGET SYSTEM - A debugging device for performing a debugging process through an electronic device external connector system is provided. The debugging device performs the debugging process to a target system, and the device comprises a first external connector, a switch, and a debugging module. The first external connector is connected to the external port of the target system. The switch is connected to the first external connector, and the switch chooses to activate the debugging process. The debugging module is connected to the switch, and the debugging module receives a universal asynchronous receiver/transmitter (UART) signal provided by the target system. | 10-03-2013 |
Patent application number | Description | Published |
20090133227 | HANDLE MECHANISM - A handle mechanism is adapted to a projector having a case. The handle mechanism has a frame, a rod, a grip, a positioning element, and an elastic element. The frame is connected to the case and has a through hole. The rod penetrates through the through hole and is capable of moving relatively to the frame. The rod has a first end, a second end, an anchor portion at the first end thereof, a first positioning portion, and a second positioning portion. The grip is connected to the second end of the rod, wherein the anchor portions limit a movement range of the grip relative to the rods and the frame. The positioning element is located between the frame and the rod. The elastic element is located between the frame and the positioning element, and forces the positioning element to physically interfere with the first or the second positioning portion. | 05-28-2009 |
20090237947 | LAMP POSITION ADJUSTMENT DEVICE AND LAMP MODULE HAVING THE SAME - A lamp position adjustment device includes a bottom frame, a lamp holder, and a lamp mount. The lamp holder is disposed on the bottom frame for supporting the lamp, and the lamp mount is disposed between the lamp holder and the bottom frame. The lamp mount includes a base portion, a first side portion and a second side portion that are respectively connected to two opposite sides of the base portion, a first positioning mechanism, and a second positioning mechanism. The first positioning mechanism is disposed on the base portion to enable the lamp mount to be slidably connected to the bottom frame, and the second positioning mechanism is disposed on the first side portion and the second side portion to enable the lamp mount to be slidably connected to the lamp holder. | 09-24-2009 |
Patent application number | Description | Published |
20130088721 | MIRROR IMAGE SUPPRESSION METHOD - A mirror image suppression method adapted to an optical coherence tomography (OCT) system is provided. The mirror image suppression method includes the following steps: obtaining a tomography image of an object to be tested by using the OCT system; calculating one real image signal obtained from an n | 04-11-2013 |
20130217212 | FABRICATION METHOD OF NITRIDE FORMING ON SILICON SUBSTRATE - The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer. | 08-22-2013 |
20130256650 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits. | 10-03-2013 |
20130285267 | FABRICATION METHOD OF NANOPARTICLE - A fabrication method of nanoparticles is provided. A substrate having a plurality of pillar structures is provided and then a plurality of ring structures is formed to surround the plurality of the pillar structures. The inner wall of each ring structure surrounds the sidewall of each pillar structure. A portion of each pillar structure is removed to reduce the height of each pillar structure and to expose the inner wall of each ring structure. The ring structures are separated from the pillar structures to form a plurality of nanoparticles. Surface modifications are applied to the ring structures before the ring structures are separated from the pillar structures on the substrate. | 10-31-2013 |
20140042387 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles. | 02-13-2014 |
20150097209 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device including a Si (110) substrate, a buffer layer, a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer is provided. The Si (110) substrate has a plurality of trenches. Each trench at least extends along a first direction, and the first direction is parallel to a <1-10> crystal direction of the Si (110) substrate. The buffer layer is located on the Si (110) substrate and exposes the trenches. The first type doped semiconductor layer is located on the buffer layer and covers the trenches. The light-emitting layer is located on the first type doped semiconductor layer. The second type doped semiconductor layer is located on the light-emitting layer. A fabrication method of a semiconductor device is also provided. | 04-09-2015 |