Patent application number | Description | Published |
20100258808 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor and a manufacturing method thereof are provided. A bottom gate, a gate insulating layer and an amorphous semiconductor layer are formed on a substrate. The amorphous semiconductor layer has an uneven upper surface. A laser annealing process is performed on the amorphous semiconductor layer through the uneven upper layer to transform the amorphous semiconductor layer into a polycrystalline semiconductor layer having a smaller-crystallizing-section and a greater-crystallizing-section. Another gate insulating layer, an upper gate and patterned photoresist layer are formed on the polycrystalline semiconductor layer. Patterns of the upper gate and the bottom gate are defined by the same photo-mask. A source/drain is formed in the polycrystalline semiconductor layer. An etching process with etching selectivity is performed on the upper gate and the patterned photoresist layer to make a length of the upper gate shorter than that of the bottom gate. | 10-14-2010 |
20100263944 | SENSOR STRUCTURE OF TOUCH PANEL AND METHOD FOR DETERMINING TOUCH SIGNAL GENERATING BY SENSOR STRUCTURE OF TOUCH PANEL - A sensor structure of a touch panel and a method of determining a touch signal generated by the same are disclosed. The sensor structure includes a plurality of sensor lines disposed on a surface of a substrate, and a control circuit electrically connected to the sensor lines. Each of the sensor lines has a plurality of conductive pads and a conductive line electrically connected the conductive pads. The control circuit receives a touch signal from one of the sensor lines. The touch signal is resulting from a touch capacitance generated between a touch and one of the conductive pads of the sensor line. The control circuit calculates the position of the touch based on the touch capacitance. In addition, the touch capacitance generated by a conductive pad close to the control circuit is larger than the touch capacitance generated by another conductive pad further away from the control circuit. | 10-21-2010 |
20100271317 | METHOD OF POSITIONING COORDINATE - A method of positioning a coordinate suitable for a touch panel includes following steps. When a touch event occurs, the touch panel generates a corresponding detection coordinate periodically until the touch event ends. When the touch event occurs, the detection coordinate generated by the touch panel is sequentially stored. The touch event is ignored until the number of coordinates generated by the touch panel is greater than or equal to N, and N is a positive integer. When the number of coordinates generated by the touch panel is greater than or equal to N, a touch coordinate corresponding to the touch event is generated according to the last generated N detection coordinates. The above-mentioned step of generating the touch coordinate is repeated according to a cycle of generating the detection coordinate by the touch panel so as to renew the touch coordinate until the touch event ends. | 10-28-2010 |
20100309171 | METHOD OF SCANNING TOUCH PANEL - A method of scanning a touch panel is provided. The present method includes following steps. First, a scan area is defined according to the coordinates of a detected touch signal. Next, the scan area is scanned during a predetermined period to detect a next touch panel. After the predetermined period, a sensing range of the touch panel is scanned to re-define the scan area. Because the scan area is smaller than the sensing range of the touch panel, the time and power consumed by the scanning operation can be both reduced by detecting the touch signals within the scan area. | 12-09-2010 |
20100315347 | TOUCH INPUT DEVICE - A touch input device includes a substrate, plural sensible conductive layers and plural first switch units. The substrate is provided with an upper surface, the sensible conductive layers are all configured on the upper surface and are arranged in columns and rows. The first switch units are configured on the substrate and are electrically connected with the sensible conductive layers. By the first switch units, same columns of the sensible conductive layers can conduct electrically with one another and same rows of the sensible conductive layers can conduct electrically with one another. | 12-16-2010 |
20110186359 | Touch Panel Sensing Circuit - In a capacitance sensing analog circuit of a touch panel sensing circuit, by raising a magnitude of a current flowing through a sensing capacitor to form an amplified sensing capacitance, while sensing the amplified sensing capacitance with the aid of pulse width modulation signals, higher resolution of the original sensing capacitance may thus be achieved. Besides, by using a self-calibrating capacitance sensing circuit on the touch panel sensing circuit, linear errors and DC errors of an output signal of the capacitance sensing analog circuit may be filtered off, and thereby resolution of a capacitance amplifying ratio may be effectively raised so as to relieve errors within the capacitance amplifying ratio caused by noises. | 08-04-2011 |
20110216031 | CAPACITANCE SENSING CIRCUIT - A capacitance sensing circuit for a touch panel includes an analog capacitance-detecting circuit, a PWM-to-digital circuit and a self-calibration circuit. The analog capacitance-detecting circuit detects the capacitance of the touch panel based on a charging current, and converts the detected capacitance into a PWM control signal. The PWM-to-digital circuit converts the PWM control signal into a sensing count value based on a clock signal. The self-calibration circuit adjusts the value of the charging current or the frequency of the clock signal according to the difference between the range of the sensing count value and a predetermined detecting range. The predetermined detecting range can thus be adjusted for matching the range of the sensing count value. | 09-08-2011 |
20120091319 | DRIVING METHOD FOR PHOTOSENSOR ARRAY PANEL - A driving method for a photosensor array panel including a plurality of photosensor strips, a plurality of scan lines, at least a dummy photosensor strip, and at least a dummy scan line is provided. The photosensor strips are arranged side by side and located beside the dummy photosensor strip. The scan lines are electrically connected to the photosensor strips, and the dummy scan line is electrically connected to the dummy photosensor strip. The driving method includes the following steps. First, the photosensor strips are turned on in sequence through the scan lines. When none of the photosensor strips is turned on, the dummy photosensor strip will be turned on through the dummy scan line. | 04-19-2012 |
Patent application number | Description | Published |
20120292720 | METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A metal gate structure includes a high dielectric constant (high-K) gate dielectric layer, a metal gate having at least a U-shaped work function metal layer positioned on the high-K gate dielectric layer, and a silicon carbonitride (SiCN) seal layer positioned on sidewalls of the high-K gate dielectric layer and of the metal gate. | 11-22-2012 |
20120329261 | MANUFACTURING METHOD FOR METAL GATE - A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function. | 12-27-2012 |
20130072030 | METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER - A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature. | 03-21-2013 |
20130234216 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PMOS DEVICE FABRICATED BY THE METHOD - A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed. | 09-12-2013 |
20140162431 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE - A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer. | 06-12-2014 |
20140199854 | METHOD OF FORMING FILM ON DIFFERENT SURFACES - A method of forming a film is provided. The method includes at least the following steps. A first substrate and a second substrate are provided in a batch processing system, wherein a first surface of the first substrate is adjacent to a second surface of the second substrate, the first surface of the first substrate has a first surface condition, the second surface of the second substrate has a second surface condition, and the first surface condition is different from the second surface condition. A pretreatment gas is provided to the surfaces of the substrates for transforming the first surface condition and the second surface condition to a third surface condition. A reaction gas is provided to form the film on the surfaces, having the third surface condition, of the substrates. | 07-17-2014 |
20150140780 | METHOD FOR FABRICATING SHALLOW TRENCH ISOLATION STRUCTURE - A method for fabricating shallow trench isolation structure is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a trench in the substrate; (c) forming a silicon layer in the trench; and (d) performing an oxidation process to partially transform a surface of the silicon layer into an oxide layer. | 05-21-2015 |