Patent application number | Description | Published |
20110227210 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package, which includes: a substrate having an upper surface and a lower surface; a passivation layer located overlying the upper surface of the substrate; a plurality of conducting pad structures disposed overlying the upper surface of the substrate, wherein at least portions of upper surfaces of the conducting pad structures are exposed; a plurality of openings extending from the upper surface towards the lower surface of the substrate; and a plurality of movable bulks located between the openings and connected with the substrate, respectively, wherein each of the movable bulks is electrically connected to one of the conducting pad structures. | 09-22-2011 |
20120292744 | CHIP PACKAGE, METHOD FOR FORMING THE SAME, AND PACKAGE WAFER - An embodiment of the invention provides a chip package which includes: a substrate, wherein the substrate is diced from a wafer; a device region formed in the substrate; a conducting layer disposed on the substrate and electrically connected to the device region; an insulating layer disposed between the substrate and the conducting layer; and a material layer formed on the insulating layer, wherein the material layer has a recognition mark, and the recognition mark shows position information of the substrate in the wafer before the substrate is diced from the wafer. | 11-22-2012 |
20130119556 | CHIP PACKAGE - A chip package includes: a substrate having a first surface, a second surface, and a side surface connecting the first and the second surfaces; a dielectric layer located on the first surface; conducting pads comprising a first and a second conducting pads located in the dielectric layer; openings extending from the second surface towards the first surface and correspondingly exposing the conducting pads, wherein a first opening of the openings and a second opening of the openings next to the first opening respectively expose the first and the second conducting pads and extend along a direction intersecting the side surface of the substrate to respectively extend beyond the first and the second conducting pads; and a first and a second wire layers located on the second surface and extending into the first the second openings to electrically contact with the first and the second conducting pads, respectively. | 05-16-2013 |
20130193520 | POWER MOSFET PACKAGE - A power MOSFET package includes a semiconductor substrate having opposite first and second surfaces, having a first conductivity type, and forming a drain region, a doped region extending downward from the first surface and having a second conductivity type, a source region in the doped region and having the first conductivity type, a gate overlying or buried under the first surface, wherein a gate dielectric layer is between the gate and the semiconductor substrate, a first conducting structure overlying the semiconductor substrate, having a first terminal, and electrically connecting the drain region, a second conducting structure overlying the semiconductor substrate, having a second terminal, and electrically connecting the source region, a third conducting structure overlying the semiconductor substrate, having a third terminal, and electrically connecting the gate, wherein the first, the second, and the third terminals are substantially coplanar, and a protection layer between the semiconductor substrate and the terminals. | 08-01-2013 |
20130196470 | CHIP PACKAGE AND FABRICATION METHOD THEREOF - A chip package includes a substrate having a pad region, a device region, and a remained scribe region located at a periphery of the substrate; a signal and an EMI ground pads disposed on the pad region; a first and a second openings penetrating into the substrate to expose the signal and the EMI ground pads, respectively; a first and a second conducting layers located in the first and the second openings and electrically connecting the signal and the EMI ground pads, respectively, wherein the first conducting layer and the signal pad are separated from a periphery of the remained scribe region, and wherein a portion of the second conducting layer and/or the EMI ground pad extend(s) to a periphery of the remained scribe region; and a third conducting layer surrounding the periphery of the remained scribe region to electrically connect the second conducting layer and/or the EMI ground pad. | 08-01-2013 |
20130316494 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package, which includes: a substrate having an upper surface and a lower surface; a passivation layer located overlying the upper surface of the substrate; a plurality of conducting pad structures disposed overlying the upper surface of the substrate, wherein at least portions of upper surfaces of the conducting pad structures are exposed; a plurality of openings extending from the upper surface towards the lower surface of the substrate; and a plurality of movable bulks located between the openings and connected with the substrate, respectively, wherein each of the movable bulks is electrically connected to one of the conducting pad structures. | 11-28-2013 |
20140113412 | CHIP PACKAGE AND FABRICATION METHOD THEREOF - An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes. | 04-24-2014 |
20140264785 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed over the first surface and extending into the first recess and/or the second recess; an insulating layer positioned between the wire layer and the semiconductor substrate; and a metal light shielding layer disposed over the first surface and having at least one hole, wherein a shape of the at least one hole is a quadrangle. | 09-18-2014 |
20140312482 | WAFER LEVEL ARRAY OF CHIPS AND METHOD THEREOF - A wafer level array of chips is provided. The wafer level array of chips comprises a semiconductor wafer, and a least one extending-line protection. The semiconductor wafer has at least two chips, which are arranged adjacent to each other, and a carrier layer. Each chip has an upper surface and a lower surface, and comprises at least one device. The device is disposed upon the upper surface, covered by the carrier layer. The extending-line protection is disposed under the carrier layer and between those two chips. The thickness of the extending-line protection is less than that of the chip. Wherein the extending-line protection has at least one extending-line therein. In addition, a chip package fabricated by the wafer level array of chips, and a method thereof are also provided. | 10-23-2014 |
20140327152 | CHIP PACKAGE - A chip package includes: a substrate having a first surface, a second surface, and a side surface connecting the first and the second surfaces; a dielectric layer located on the first surface; conducting pads comprising a first and a second conducting pads located in the dielectric layer; openings extending from the second surface towards the first surface and correspondingly exposing the conducting pads, wherein a first opening of the openings and a second opening of the openings next to the first opening respectively expose the first and the second conducting pads and extend along a direction intersecting the side surface of the substrate to respectively extend beyond the first and the second conducting pads; and a first and a second wire layers located on the second surface and extending into the first the second openings to electrically contact with the first and the second conducting pads, respectively. | 11-06-2014 |
20140332985 | CHIP PACKAGE AND MANUFACTURING METHOD THEREOF - A chip package and a fabrication method thereof are provided according to an embodiment of the invention. The chip package includes a semiconductor substrate containing a chip and having a device area and a peripheral bonding pad area. A plurality of conductive pads is disposed at the peripheral bonding pad area and a passivation layer is formed over the semiconductor substrate to expose the conductive pads. An insulating protective layer is formed on the passivation layer at the device area. A packaging layer is disposed over the insulating protective layer to expose the conductive pads and the passivation layer at the peripheral bonding pad area. The method includes forming an insulating protective layer to cover a plurality of conductive pads during a cutting process and removing the insulating protective layer on the conductive pads through an opening of a packaging layer. | 11-13-2014 |