Chia-Chieh
Chia-Chieh Chang, Taipei City TW
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20090221113 | METHOD OF FABRICATING ORGANIC MEMORY DEVICE - A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin film is formed on the bottom surface treatment layer, and a top electrode is formed on the polymer thin film. | 09-03-2009 |
20090267056 | MEMORY CELL - A memory cell comprising a metal-insulator-semiconductor (MIS) structure is disclosed using a homogeneous carrier trapping layer interposed between a semiconductor layer and the gate electrode of a transistor structure so that the operation voltage is reduced and the manufacturing is simplified with lowered cost. The MIS structure comprises: a gate electrode; a semiconductor layer; and a homogeneous carrier trapping layer interposed between the gate electrode and the semiconductor layer; wherein the homogeneous carrier trapping layer comprises novolac. | 10-29-2009 |
20100090212 | MEMORY CELL - A memory cell comprising a metal-insulator-semiconductor (MIS) structure is disclosed using a homogeneous carrier trapping layer interposed between a semiconductor layer and the gate electrode of a transistor structure so that the operation voltage is reduced and the manufacturing is simplified with lowered cost. The MIS structure comprises: a gate electrode; a semiconductor layer; and a homogeneous carrier trapping layer interposed between the gate electrode and the semiconductor layer; wherein the homogeneous carrier trapping layer comprises novolac. | 04-15-2010 |
20110053737 | PRESSURE SENSOR AND BOXING MACHINE USING THE SAME - A pressure sensor is provided, wherein a ballast resistive layer is integrated in the pressure sensor so that the resistive output curve for the pressure sensor has saturation characteristics. The pressure sensor shall be prevented from breaking down by a large current that may be caused, when an overload pressure is applied on the pressure sensor, if no ballast resistive layer is added. | 03-03-2011 |
Chia-Chieh Hu, Kaohsiung TW
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20090170244 | METHOD FOR MANUFACTURING A FLIP CHIP PACKAGE - A method for manufacturing a flip chip package uses a dipping method to cohere liquid-state stannum onto a plurality of gold bumps of a chip. The gold bumps are correspondingly connected to a plurality of first pads of a substrate so as to connect the chip and the substrate. Finally, a protecting gel layer is disposed between the substrate and the chip, and covers the gold bumps. By utilizing the manufacturing method of the invention, the production cost can be reduced, and the manufacturing method of the invention can apply to processes in which the bump pitch is less than 60 microns. In addition, through the manufacturing method of the invention, the gold bumps are strongly joined with the first pads. Moreover, the manufacturing method of the invention can apply to various processes, so the application has a wide range of uses. | 07-02-2009 |
Chia-Chieh Ko, Tao-Yuan TW
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20150104357 | Porous Silica Aerogel Composite Membrane And Method For Making The Same And Carbon Dioxide Sorption Device - The present invention provides a porous silica aerogel composite membrane and method for making the same and a carbon dioxide sorption device. The porous silicon oxide aerogel composite membrane includes a porous aluminum oxide membrane having a plurality of macro pores with an average diameter larger than 50 nm and a porous silica aerogel membrane formed on at least one side of the porous aluminum oxide membrane and the macro pores of surface layers of the porous aluminum oxide membrane where the porous silica aerogel membrane has a plurality of meso pores with an average diameter of 2˜50 nm and is derived from methyltrimethoxysilane precursor by a sol-gel synthetic method. | 04-16-2015 |
Chia-Chieh Lin, Taichung TW
Chia-Chieh Lin, New Taipei City TW
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20130162339 | CURRENT COMPENSATING DEVICE - A compensating device is used for providing current compensation of an IC when operating in the high-voltage. The current compensating device includes a detecting unit, a rectifier, a filtering unit and a switching unit. The detecting unit electrically connected to an AC voltage. The rectifier is electrically connected to the detecting unit. The filtering unit is electrically connected to the rectifier. The switching unit is electrically connected to the filtering unit. The switching unit is conducted and provides a current to the IC when the AC voltage is above a predetermined voltage. | 06-27-2013 |
20140119058 | POWER VOLTAGE CONVERSION SYSTEM FOR CONTROLLER INTEGRATED CIRCUIT - A power voltage conversion system for a controller integrated circuit includes a DC-to-DC converter and a controller IC. The DC-to-DC converter receivers an external DC voltage and the DC-to-DC converter at least has an inductance element and a switch element. The inductance element has at least one first winding and one second winding and the first winding is connected to the second winding in series. The controller IC is electrically connected to the inductance element and the switch element. The external DC voltage is converted into at least one power voltage according to a turn ratio between the first winding and the second winding, thus supplying power to the controller IC to control the switch element. | 05-01-2014 |
Chia-Chieh Lin, Kaohsiung City TW
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20140264709 | Interconnect Structure for Connecting Dies and Methods of Forming the Same - A structure includes a first chip having a first substrate, and first dielectric layers underlying the first substrate, with a first metal pad in the first dielectric layers. A second chip includes a second substrate, second dielectric layers over the second substrate and bonded to the first dielectric layers, and a second metal pad in the second dielectric layers. A conductive plug includes a first portion extending from a top surface of the first substrate to a top surface of the first metal pad, and a second portion extending from the top surface of the first metal pad to a top surface of the second metal pad. An edge of the second portion is in physical contact with a sidewall of the first metal pad. A dielectric layer spaces the first portion of the conductive plug from the first plurality of dielectric layers. | 09-18-2014 |
20140264929 | Interconnect Structure for Stacked Device - A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers. | 09-18-2014 |
20140272704 | THICKENING PHASE FOR SPIN COATING PROCESS - Among other things, one or more techniques and systems for performing a spin coating process associated with a wafer and for controlling thickness of a photoresist during the spin coating process are provided. In particular, a thickening phase is performed during the spin coating process in order to increase a thickness of the photoresist. For example, air temperature of down flow air, flow speed of the down flow air, and heat temperature of heat supplied towards the wafer are increased during the thickening phase. The increase in down flow air and heat increase a vaporization factor of the photoresist, which results in an increase in viscosity and thickness of the photoresist. In this way, the wafer can be rotated at relatively lower speeds, while still attaining a desired thickness. Lowering rotational speed of wafers allows for relatively larger wafers to be stably rotated. | 09-18-2014 |
Chia-Chieh Liu, Hsichih TW
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20090292807 | MULTIMEDIA DATA TRANSFERRING METHOD AND SYSTEM THEREOF - A multimedia data transferring method includes the following steps. Receive a browsing command from a controller, wherein the controller is in a first domain. Obtain the transfer protocol and data format supported by a multimedia content item from a media server based on the browsing command, wherein the media server is in a second domain. Obtain the transfer protocol and data format supported by a media renderer, wherein the media renderer is in the first domain. Decide a desired transfer protocol and a desired data format from the transfer protocol and data format supported by multimedia content item and the media renderer. Notify the media renderer and the media server the desired transfer protocol and the desired data format. Create the data transferring connection between the media renderer and the media server based on the desired transfer protocol and data format. | 11-26-2009 |
Chia-Chieh Shen, Jhongli City TW
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20080248367 | FUEL CELL MODULE COMPATIBLE WITH A DRY CELL - The present invention provides a fuel cell module compatible with a dry cell. The fuel cell module includes an enclosure, a power generating unit, a hydrogen storage unit and positive/negative output ends. The hollow enclosure has an internal space, and is provided with some preset through-holes, allowing external oxygen to enter into the space. The power generating unit and hydrogen storage unit are mounted into the space of the enclosure. Positive and negative output ends are placed at both sides or adjacent at one side of the enclosure, thereby guiding the positive and negative charge generated by the power generating unit; since the fuel cell modules are compatible with existing conventional dry cells. These modules are widely applied to existing electrical or electronic products. | 10-09-2008 |
Chia-Chieh Tuanmu, Pingtung City TW
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20090269072 | METHODS FOR ALLOCATING TRANSMISSION BANDWIDTHS OF A NETWORK - Methods for allocating transmission bandwidths of a network are adapted to a network including an office terminal and peripheral terminals. The peripheral terminals communicate with the office terminal by time division multiplexing during a sequence of transmitting cycles. The method includes receiving requested bandwidths from uploading messages delivered from the peripheral terminals, arranging an uploading order of the peripheral terminals based on the uploading messages to obtain a transmitting sequence, adjusting the uploading order of each of the peripheral terminals in the transmitting sequence based on a size of the requested bandwidth to obtain a modified transmitting sequence, and arranging a modified uploading order of the peripheral terminals based on the modified transmitting sequence. Therefore, the transmission bandwidth allocation is fairer, and delay is reduced. Upstream order of each terminal is transferred based on its requested bandwidth, thereby effectively reducing the average delay. | 10-29-2009 |
Chia-Chieh Weng, Nantou County TW
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20140152287 | SYNCHRONOUS DC-DC CONVERTER HAVING SOFT-STOP FUNCTION - A synchronous DC-DC converter having a soft-stop function includes an output stage for supplying an output voltage, wherein the output stage includes a high-side transistor for charging the output voltage and a low-side transistor for discharging the output voltage; an output control circuit, coupled to the output stage, for controlling the high-side transistor and the low-side transistor of the output stage; at least one protection device, for controlling the high-side transistor to be turned off when a specific situation occurs, in order to stop supplying the output voltage; and a soft-stop control circuit, coupled to the output control circuit, for controlling the low-side transistor of the output stage to be turned on when the protection device controls the high-side transistor to be turned off or the synchronous DC-DC converter is disabled, in order to discharge the output voltage. | 06-05-2014 |
Chia-Chieh Wu, Hsinchu City TW
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20100054258 | SWITCH, OPERATION METHOD THEREOF AND METHOD FOR UPDATING FORWARDING TABLE - A switch, an operation method thereof, and a method for updating a forwarding table thereof are provided. The method for updating the forwarding table includes receiving a packet, and determining whether the packet is one of a Join type packet and a Leave type packet for determining to adopt a first VLAN table or a second VLAN table. In the first VLAN table, a first apparatus and a second apparatus are defined in different VLANs, and in the second VLAN table, the first apparatus and the second apparatus are defined in a same VLAN. When it is determined that the packet is one of the Join type packet and the Leave type packet, the second VLAN table is adopted for updating the forwarding table for simplifying the content of the forwarding table. Further, an efficiency of the switch can be improved by using the updated forwarding table. | 03-04-2010 |