Patent application number | Description | Published |
20110186909 | ESD PROTECTION CIRCUIT FOR RFID TAG - An electrostatic discharge (ESD) protection circuit structure includes a dual directional silicon controlled rectifier (SCR) formed in a substrate. The SCR includes first and second P-wells laterally interposed by an N-well. A deep N-well is disposed underneath the P-wells and the N-well. First and second N-type regions are disposed in the first and second P-wells, respectively, and are coupled to a pair of pads. First and second P-type regions are disposed in the first and second P-wells, respectively, are coupled to the pads, and are disposed closer to the N-well than the first and second N-type regions, respectively. | 08-04-2011 |
20110233678 | JUNCTION VARACTOR FOR ESD PROTECTION OF RF CIRCUITS - An ESD protection device includes a first well of a first semiconductor type disposed in a substrate of a second semiconductor type forming a first diode. A second well of the second semiconductor type is formed in the substrate to form a second diode with the first well. A first plurality of doped regions of the first semiconductor type are formed in an upper surface of the first well. A second plurality of doped regions of the second semiconductor type are formed in the upper surface of the first well forming a third diode with the first well. A plurality of STI regions are formed in the upper surface of the first well. Each STI region is disposed between a doped region of the first and second semiconductor types. The third diode provides a current bypass when an ESD voltage spike is received at one of the first or second plurality of doped regions. | 09-29-2011 |
20110260819 | CONTINUOUSLY TUNABLE INDUCTOR WITH VARIABLE RESISTORS - An integrated tunable inductor includes a primary inductor having a plurality of inductor turns, at least one closed loop eddy current coil proximate the primary inductor, and at least one variable resistor integrated in series with the eddy current coil. | 10-27-2011 |
20110304372 | METHOD AND APPARATUS FOR AMPLIFYING A TIME DIFFERENCE - A time amplifier circuit has first and second inverters and first and second pull-down paths. Each inverter includes a first NMOS transistor and a first PMOS transistor. A source of the first NMOS transistor is coupled to a ground node directly or through a first additional NMOS transistor having a gate coupled to a respective input node. The first and second inverters are coupled to first and second input nodes and to first and second output nodes, respectively. The first pull-down path is from the first output node to the ground node and is enabled in response to the first input signal and the second output signal being high. The second pull-down path is from the second output node to ground and is enabled in response to the second input signal and the first output signal being high. | 12-15-2011 |
20120019968 | TRANSMISSION-LINE-BASED ESD PROTECTION - An ESD protection circuit includes a signal pad, a short circuited shunt stub on-chip with and coupled to the signal pad, an open circuited shunt stub on-chip and coupled to the signal pad. | 01-26-2012 |
20120032742 | CMOS MILLIMETER-WAVE VARIABLE-GAIN LOW-NOISE AMPLIFIER - A low-noise amplifier (LNA) includes a first cascode gain stage coupled to an input node for increasing an amplitude of an RF input signal. A first variable gain network is coupled to the first cascode gain stage and includes a first inductor for boosting a gain of the first cascode gain stage, a first capacitor coupled to the first inductor for blocking a direct current (DC) voltage, and a first switch coupled to the first inductor and to the first capacitor. The first switch is configured to selectively couple the first inductor to the first cascode gain stage in response to a first control signal. | 02-09-2012 |
20120032743 | LOW-NOISE AMPLIFIER WITH GAIN ENHANCEMENT - A low-noise amplifier (“LNA”) includes a first cascode gain stage including a first complementary metal oxide semiconductor (“CMOS”) transistor configured to receive a radio frequency (“RF”) input signal and a second CMOS transistor coupled to an output node. The first inductive gate network is coupled to a gate of the second CMOS transistor for increasing a gain of the first cascode gain stage. The first inductive gate network has a non-zero inductive input impedance and includes at least one passive circuit element. | 02-09-2012 |
20120056769 | METHOD AND SYSTEM FOR TIME TO DIGITAL CONVERSION WITH CALIBRATION AND CORRECTION LOOPS - Methods and apparatuses for time to digital conversion (TDC) are disclosed. A timing circuit comprises a TDC circuit, a calibration module, and a correction module. The TDC circuit is configured to provide a timing signal indicative of a timing difference between edges of a periodic reference clock signal and a variable feedback signal. The TDC circuit is also configured to provide a delay signal that is variably delayed relative to the reference clock signal. The calibration module is configured to provide a calibration signal to increase and decrease a total delay of the TDC circuit based on a time delay of the calibration signal plus a time delay of a correction signal. The correction module, which is configured to receive the timing signal and provide the correction signal, minimizes harmonic spurs in a frequency response of the timing signal by operating at a frequency of the reference clock signal. | 03-08-2012 |
20120068745 | INJECTION-LOCKED FREQUENCY DIVIDER - A representative injection-locked frequency divider includes a differential direct injection pair that is configured to receive and mix differential injection signals and an oscillator that is electrically connected to the differential direct injection pair and produces an operating frequency based on the mixed differential injection signals. | 03-22-2012 |
20120146747 | MILLIMETER-WAVE WIDEBAND FREQUENCY DOUBLER - A millimeter-wave wideband frequency doubler stage for use in a distributed frequency doubler includes: a differential input pair of transistors, each transistor having respective gate, drain and source terminals, wherein the source terminals are coupled together to a first power supply node and the drain terminals are coupled together at a first node to a second power supply node; first and second pairs of bandpass gate lines coupled to the gate terminals of the transistors; and a pair of bandpass drain lines coupled to the drain terminals of the transistors. | 06-14-2012 |
20130134553 | INTERPOSER AND SEMICONDUCTOR PACKAGE WITH NOISE SUPPRESSION FEATURES - Interposer and semiconductor package embodiments provide for the isolation and suppression of electronic noise such as EM emissions in the semiconductor package. The interposer includes shield structures in various embodiments, the shield structures blocking the electrical noise from the noise source, from other electrical signals or devices. The shields include solid structures and some embodiments and decoupling capacitors in other embodiments. The coupling structures includes multiple rows of solder balls included in strips that couple the components and surround and contain the source of electrical noise. | 05-30-2013 |
20130271223 | AMPLIFIER WITH FLOATING WELL - A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit. | 10-17-2013 |
20130320553 | NOVEL BEAD FOR 2.5D/3D CHIP PACKAGING APPLICATION - An integrated circuit package having a multilayer interposer has one or more metal wiring beads provided in the interposer, each of the one or more metal wiring beads has a convoluted wiring pattern that is formed in one of the multiple layers of wiring structures in the interposer, and two terminal end segments connected to the power lines in the integrated circuit package, wherein the one or more metal wiring beads operate as power noise filters. | 12-05-2013 |
20140001609 | INTERPOSER AND SEMICONDUCTOR PACKAGE WITH NOISE SUPPRESSION FEATURES | 01-02-2014 |
20140252546 | SWITCHED CAPACITOR STRUCTURE - A capacitor structure comprising semiconductor substrate and a matrix of capacitor units formed over the semiconductor substrate each capacitor unit. The matrix includes an interior structure comprised of one or more vertical plates, each vertical plate of the interior structure formed from a plurality of conductive portions connected vertically to each other, an exterior structure comprised of one or more vertical plates, each vertical plate of the exterior structure formed from a plurality of conductive portions connected vertically to each other, the exterior structure substantially encompassing the interior structure, and insulative material separating the interior and exterior structures. The structure also comprises a switching mechanism included in the capacitor structure to switch between ones of the plural capacitor units. | 09-11-2014 |
20140266419 | VOLTAGE CONTROLLER FOR RADIO-FREQUENCY SWITCH - One or more systems and techniques for limiting a voltage potential between an antenna and a radio-frequency switch circuit are provided. A voltage controller comprises a voltage generator, a voltage detection circuit and a switch cell. The voltage detection circuit is coupled to the voltage generator and to the switch cell, and the switch cell is coupled to a voltage source, and to a node between the radio-frequency switch circuit and the antenna. When the voltage potential exceeds a specified threshold, the voltage generator produces a voltage which the voltage detection circuit measures such that the voltage detection circuit activates the switch cell, resulting in a short circuit between the radio-frequency switch circuit and the voltage source. This serves to inhibit the voltage potential from exceeding the specified threshold, for example. | 09-18-2014 |
20150014786 | HIGH PERFORMANCE POWER CELL FOR RF POWER AMPLIFIER - A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a depletion or Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the depletion or Schottky MOSFET. The source node of the enhancement MOSFET and source node of the depletion or Schottky MOSFET are connected together to form the power cell. | 01-15-2015 |
20150015336 | CMOS CASCODE POWER CELLS - A circuit includes a first CMOS device forming a gain stage of a power amplifier and a second CMOS device forming a voltage buffer stage of the power amplifier. The first CMOS device includes a first doped well formed in a substrate, a first drain region and a first source region spaced laterally from one another in the first doped well, and a first gate structure formed over a first channel region in the first doped well. The second CMOS device includes a second doped well formed in the semiconductor substrate such that the first doped well and the second is disposed adjacent to the second doped well. A second drain region and a second source region are spaced laterally from one another in the second doped well, and a second gate structure formed over a second channel region in the second doped well. | 01-15-2015 |
20150084158 | THREE DIMENSIONAL CIRCUIT INCLUDING SHIELDED INDUCTOR AND METHOD OF FORMING SAME - The three dimensional (3D) circuit includes a first tier including a semiconductor substrate, a second tier disposed adjacent to the first tier, a three dimensional inductor including an inductive element portion, the inductive element portion including a conductive via extending from the first tier to a dielectric layer of the second tier. The 3D circuit includes a ground shield surrounding at least a portion of the conductive via. In some embodiments, the ground shield includes a hollow cylindrical cage. In some embodiments, the 3D circuit is a low noise amplifier. | 03-26-2015 |