Patent application number | Description | Published |
20120242627 | AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD - This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source region, a drain region, and a channel region between the source region and the drain region is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel region, and a first metal layer on the dielectric layer. A second metal layer is formed on the oxide semiconductor layer overlying the source region and the drain region. The oxide semiconductor layer and the second metal layer are treated to form a heavily doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source region and the drain region. An oxide in the second metal layer also can be formed. | 09-27-2012 |
20130037793 | AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD - This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel area of the substrate, and a first metal layer on the dielectric layer. Hydrogen ions are implanted with a plasma-immersion ion implantation process in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The hydrogen ion implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate. | 02-14-2013 |
20130135705 | SYSTEMS, DEVICES, AND METHODS FOR DRIVING AN ANALOG INTERFEROMETRIC MODULATOR - This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for accurately positioning a movable conductive layer of a reflective display element. In one aspect, an initial position of the movable conductive layer with respect to at least one or more fixed conductive layers is sensed. A charging voltage may be determined based at least in part on the initial position. The charging voltage may be applied to the movable conductive layer. | 05-30-2013 |
20130293523 | VOLTAGE BIASED PULL ANALOG INTERFEROMETRIC MODULATOR WITH CHARGE INJECTION CONTROL - This disclosure provides systems, methods and apparatus for driving three-terminal electromechanical systems (EMS) devices. The driving systems and methods described herein include a switched capacitor charge injection circuit that is configured to isolate a single EMS device and transfer a desired amount of charge to the isolated device such that the device can be actuated to produce a desired optical, electrical or mechanical effect. The charge injection circuit can include an operational amplifier and can be connected such that the EMS device is placed in the feedback path of the operational amplifier. | 11-07-2013 |
20140027758 | MULTI-GATE THIN-FILM TRANSISTOR - This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load. | 01-30-2014 |
20140063022 | ELECTROMECHANICAL SYSTEMS DEVICE - This disclosure provides systems, methods and apparatus for electromechanical systems devices including one or more storage capacitors. In one aspect, a device includes a substrate structure, a movable element configured to move relative to the substrate structure, and at least one switch. The movable element includes a first conductive layer and a second conductive layer that form a storage capacitor. The switch is configured to control a flow of charge between a source and the storage capacitor. | 03-06-2014 |
20140210835 | METAL OXIDE LAYER COMPOSITION CONTROL BY ATOMIC LAYER DEPOSITION FOR THIN FILM TRANSISTOR - This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD). | 07-31-2014 |
20140354655 | REDUCING FLOATING NODE LEAKAGE CURRENT WITH A FEEDBACK TRANSISTOR - This disclosure provides circuits and methods for reducing sub-threshold leakage currents discharging floating nodes. In one aspect, feedback from a floating node is provided to a feedback transistor configured to bias other nodes such that leakage through turned-off transistors is reduced. Additionally, leakage contributing to static power consumption may also be reduced. | 12-04-2014 |
20150070320 | PHOTOCONDUCTIVE OPTICAL TOUCH - An optical touch sensor may include traces of photoconductive material formed on a substantially transparent substrate. Each photoconductive trace may be capable of responding to an incident light intensity increase on a portion of the photoconductive trace by increasing the number of charged carriers, thereby raising the electrical conductivity of that portion of the photoconductive trace. An incident light intensity decrease on a portion of the photoconductive trace will lower the electrical conductivity of that portion of the photoconductive trace. The corresponding changes in voltage may be measured by circuits that include conductive traces formed substantially perpendicular to, and configured for electrical connection with, the traces of photoconductive material. A diode (such as a Schottky diode) may be formed at the electrical connections between the conductive traces and the photoconductive traces. | 03-12-2015 |
20150070747 | DISPLAY ELEMENT RESET USING POLARITY REVERSAL - This disclosure provides circuits and methods for resetting a movable element, such as a mirror of an interferometric modulator (IMOD), to a consistent starting point or reset position. In one example, a circuit may include three electrodes with a capacitor coupled between two of the electrodes. Additionally, the polarity of one of the electrodes may be configured to switch and reverse in polarity relative to another electrode. Accordingly, the movable element may be moved to a reset position. | 03-12-2015 |