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| 20110079840 | MEMORY CELL AND MANUFACTURING METHOD THEREOF AND MEMORY STRUCTURE - A memory cell is provided. The memory cell includes a substrate, an isolation layer, a gate, a charge storage structure, a first source/drain region, a second source/drain region and a channel layer. The isolation layer is disposed over the substrate. The gate is disposed over the isolation layer. The charge storage structure is disposed over the isolation layer and the gate. The first source/drain region is disposed over the charge storage structure at two sides of the gate. The second source/drain region is disposed over the charge storage structure at top of the gate. The channel layer is disposed over the charge storage structure at sidewall of the gate and is electrically connected with the first source/drain region and the second source/drain region. | 04-07-2011 |
| 20120326222 | MEMORY STRUCTURE AND FABRICATING METHOD THEREOF - A memory structure including a memory cell is provided, and the memory cell includes following elements. A first gate is disposed on a substrate. A stacked structure includes a first dielectric structure, a channel layer, a second dielectric structure and a second gate disposed on the first gate, a first charge storage structure disposed in the first dielectric structure and a second charge storage structure disposed in the second dielectric structure. At least one of the first charge storage structure and the second charge storage structure includes two charge storage units which are physically separated. A first dielectric layer is disposed on the first gate at two sides of the stacked structure. A first source and drain and a second source and drain are disposed on the first dielectric layer and located at two sides of the channel layer. | 12-27-2012 |
| 20130092997 | NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF - A non-volatile memory and a manufacturing method thereof are provided. A first oxide layer having a protrusion is formed on a substrate. A pair of doped regions is formed in the substrate at two sides of the protrusion. A pair of charge storage spacers is formed on the sidewalls of the protrusion. A second oxide layer is formed on the first oxide layer and the charge storage spacers. A conductive layer is formed on the second oxide layer. | 04-18-2013 |
| 20130134498 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A memory device is described, including a tunnel dielectric layer over a substrate, a gate over the tunnel dielectric layer, at least one charge storage layer between the gate and the tunnel dielectric layer, two doped regions in the substrate beside the gate, and a word line that is disposed on and electrically connected to the gate and has a thickness greater than that of the gate. | 05-30-2013 |
| 20130240975 | ROM FOR CONSTRAINING 2nd-BIT EFFECT - A read only memory including a substrate, a source region and a drain region, a charge storage structure, a gate, and a local extreme doping region is provided. The source region and the drain region are disposed in the substrate, the charge storage structure is located on the substrate between the source region and the drain region, and the gate is configured on the charge storage structure. The local extreme doping region is located in the substrate between the source region and the drain region and includes a low doping concentration region and at least one high doping concentration region. The high doping concentration region is disposed between the low doping concentration region and one of the source region and the drain region, and a doping concentration of the high doping concentration region is three times or more than three times a doping concentration of the low doping concentration region. | 09-19-2013 |
| 20140187032 | METHOD FOR FABRICATING MEMORY DEVICE - A method for fabricating a memory device of this invention includes at least the following steps. A tunnel dielectric layer is formed over a substrate. A gate is fowled over the tunnel dielectric layer. At least one charge storage layer is formed between the gate and the tunnel dielectric layer. Two doped regions are formed in the substrate beside the gate. A word line is formed on and electrically connected to the gate, wherein the word line having a thickness greater than a thickness of the gate. | 07-03-2014 |
| 20140306282 | MULTI LEVEL PROGRAMMABLE MEMORY STRUCTURE - A memory structure includes a memory cell, and the memory cell includes following elements. A first gate is disposed on a substrate. A stacked structure includes a first dielectric structure, a channel layer, a second dielectric structure and a second gate disposed on the first gate, a first charge storage structure disposed in the first dielectric structure and a second charge storage structure disposed in the second dielectric structure. The first charge storage structure is a singular charge storage unit and the second charge storage structure comprises two charge storage units which are physically separated. A channel output line physically connected to the channel layer. A first dielectric layer is disposed on the first gate at two sides of the stacked structure. A first source or drain and a second source or drain are disposed on the first dielectric layer and located at two sides of the channel layer. | 10-16-2014 |
| 20140308791 | MANUFACTURING METHOD OF NON-VOLATILE MEMORY - A non-volatile memory and a manufacturing method thereof are provided. In this method, a first oxide layer having a protrusion is formed on a substrate. A pair of doped regions is formed in the substrate at two sides of the protrusion. A pair of charge storage spacers is formed on the sidewalls of the protrusion. A second oxide layer is formed on the first oxide layer and the pair of charge storage spacers. A conductive layer is formed on the second oxide layer, wherein the conductive layer is located completely on the top of the pair of charge storage spacers. | 10-16-2014 |
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| 20120329254 | Method for Forming Antimony-Based FETs Monolithically - An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer. | 12-27-2012 |
| 20130171792 | Methods for Semiconductor Regrowth - A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region. | 07-04-2013 |
| 20130228875 | Apparatus and Method for FinFETs - A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region. | 09-05-2013 |
| 20130234147 | Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials - An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin. | 09-12-2013 |
| 20130240836 | FinFET Having Superlattice Stressor - A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by a substrate. The strained layer is disposed on the superlattice layer and provides a gate channel. The gate channel is stressed by the superlattice layer. In an embodiment, the superlattice layer is formed by stacking different silicon germanium alloys or stacking other III-V semiconductor materials. | 09-19-2013 |
| 20130248948 | Source/Drain Profile for FinFET - An embodiment is a FinFET device. The FinFET device comprises a fin, a first source/drain region, a second source/drain region, and a channel region. The fin is raised above a substrate. The first source/drain region and the second source/drain region are in the fin. The channel region is laterally between the first and second source/drain regions. The channel region has facets that are not parallel and not perpendicular to a top surface of the substrate. | 09-26-2013 |
| 20140033981 | MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates - A device includes providing a silicon substrate; annealing the silicon substrate at a first temperature higher than about 900° C.; and lowering a temperature of the silicon substrate from the first temperature to a second temperature. A temperature lowering rate during the step of lowering the temperature is greater than about 1° C./second. A III-V compound semiconductor region is epitaxially grown on a surface of the silicon substrate using metal organic chemical vapor deposition (MOCVD). | 02-06-2014 |
| 20140151819 | Semiconductor Device Having SiGe Substrate, Interfacial Layer and High K Dielectric Layer - The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an interfacial layer. An exemplary structure for a semiconductor device comprises a Si | 06-05-2014 |
| 20140183645 | Complimentary Metal-Oxide-Semiconductor (CMOS) With Low Contact Resistivity and Method of Forming Same - An embodiment complimentary metal-oxide-semiconductor (CMOS) device and an embodiment method of forming the same are provided. The embodiment CMOS device includes an n-type metal-oxide-semiconductor (NMOS) having a titanium-containing layer interposed between a first metal contact and an NMOS source and a second metal contact and an NMOS drain and a p-type metal-oxide-semiconductor (PMOS) having a PMOS source and a PMOS drain, the PMOS source having a first titanium-containing region facing a third metal contact, the PMOS drain including a second titanium-containing region facing a fourth metal contact. | 07-03-2014 |
| 20140217499 | Methods for Forming Semiconductor Regions in Trenches - A structure includes a semiconductor substrate including a first semiconductor material. A portion of the semiconductor substrate extends between insulation regions in the semiconductor substrate. The portion of the semiconductor substrate has a (111) surface and a bottom surface. The (111) surface is slanted and has a top edge and a bottom edge. The bottom surface is parallel to a top surface of the insulation regions, and is connected to the bottom edge. A semiconductor region overlaps the portion of the semiconductor substrate, wherein the semiconductor region includes a second semiconductor material different from the first semiconductor material. The top edge and the bottom edge of the (111) surface are at a first depth and a second depth, respectively, relative to a top surface of the semiconductor region. A ratio of the first depth to the second depth is smaller than about 0.6. | 08-07-2014 |
| 20140220751 | Methods for Forming Semiconductor Regions in Trenches - A method includes recessing a portion of a semiconductor substrate between opposite isolation regions to form a recess. After the step of recessing, the portion of the semiconductor substrate includes a top surface. The top surface includes a flat surface, and a slant surface having a (111) surface plane. The slant surface has a bottom edge connected to the flat surface, and a top edge connected to one of the isolation regions. The method further includes performing an epitaxy to grow a semiconductor material in the recess, wherein the semiconductor material is grown from the flat surface and the slant surface, and performing an annealing on the semiconductor material. | 08-07-2014 |
| 20140220753 | Apparatus and Method for FinFETs - A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region. | 08-07-2014 |
| 20140235040 | Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers - A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars. | 08-21-2014 |
| 20140239402 | FinFETs with Strained Well Regions - A device includes a substrate and insulation regions over a portion of the substrate. A first semiconductor region is between the insulation regions and having a first conduction band. A second semiconductor region is over and adjoining the first semiconductor region, wherein the second semiconductor region includes an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin. The semiconductor fin has a tensile strain and has a second conduction band lower than the first conduction band. A third semiconductor region is over and adjoining a top surface and sidewalls of the semiconductor fin, wherein the third semiconductor region has a third conduction band higher than the second conduction band. | 08-28-2014 |
| 20140246695 | ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE - The invention relates to an isolation structure of a semiconductor device. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench. | 09-04-2014 |
| 20140252469 | FinFETs with Strained Well Regions - A device includes a substrate and insulation regions over a portion of the substrate. A first semiconductor region is between the insulation regions and having a first conduction band. A second semiconductor region is over and adjoining the first semiconductor region, wherein the second semiconductor region includes an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin. The second semiconductor region also includes a wide portion and a narrow portion over the wide portion, wherein the narrow portion is narrower than the wide portion. The semiconductor fin has a tensile strain and has a second conduction band lower than the first conduction band. A third semiconductor region is over and adjoining a top surface and sidewalls of the semiconductor fin, wherein the third semiconductor region has a third conduction band higher than the second conduction band. | 09-11-2014 |
| 20140284726 | Apparatus and Method for FinFETs - A FinFET device comprises an isolation region in a substrate, wherein the isolation region comprises a plurality of non-vertical sidewalls, a first V-shaped groove, a second V-shaped groove and a third V-shaped groove formed in the substrate, a first cloak-shaped active region over the first V-shaped groove, wherein a top surface of the first cloak-shaped active region comprises a first slope, a second cloak-shaped active region over the second V-shaped groove, wherein a top surface of the second cloak-shaped active region is triangular in shape and | 09-25-2014 |
| 20140357049 | Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials - An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin. | 12-04-2014 |
| 20150123144 | Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials - An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin. | 05-07-2015 |
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| 20130049068 | FINFET DEVICE HAVING A CHANNEL DEFINED IN A DIAMOND-LIKE SHAPE SEMICONDUCTOR STRUCTURE - The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions. | 02-28-2013 |
| 20130119370 | STRAINED STRUCTURES OF SEMICONDUCTOR DEVICES - A strained structure of a semiconductor device is disclosed. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a gate stack on the major surface of the substrate; a shallow trench isolation (STI) disposed on one side of the gate stack, wherein the STI is within the substrate; and a cavity filled with a strained structure distributed between the gate stack and the STI, wherein the cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate, wherein the strained structure comprises a SiGe layer and a first strained film adjoining the sidewall of the STI. | 05-16-2013 |
| 20130119405 | SEMICONDUCTOR DEVICE WITH ENHANCED STRAIN - The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate. The semiconductor device includes a gate that is disposed over the substrate. The substrate has a recess. The semiconductor device includes a trench liner that is coated along the recess. The trench liner contains a semiconductor crystal material. The trench liner directly abuts the source/drain stressor device. The semiconductor device also includes a dielectric trench component that is disposed on the trench liner and filling the recess. The semiconductor device includes a source/drain stressor device that is disposed in the substrate. The source/drain stressor device is disposed between the gate and the trench liner. | 05-16-2013 |
| 20130168771 | Method of Forming CMOS FinFET Device - A CMOS FinFET device and method for fabricating a CMOS FinFET device is disclosed. An exemplary CMOS FinFET device includes a substrate including a first region and a second region. The CMOS FinFET further includes a fin structure disposed over the substrate including a first fin in the first region and a second fin in the second region. The CMOS FinFET further includes a first portion of the first fin comprising a material that is the same material as the substrate and a second portion of the first fin comprising a III-V semiconductor material deposited over the first portion of the first fin. The CMOS FinFET further includes a first portion of the second fin comprising a material that is the same material as the substrate and a second portion of the second fin comprising a germanium (Ge) material deposited over the first portion of the second fin. | 07-04-2013 |
| 20130248927 | CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE - A contact structure for a semiconductor device includes a substrate comprising a major surface and a cavity. A bottom surface of the cavity is lower than the major surface. The contact structure also includes a strained material in the cavity, and a lattice constant of the strained material is different from lattice constant of the substrate. The contact structure also includes a first metal layer over the strained material, a dielectric layer over the first metal layer, and a second metal layer over the dielectric layer. The dielectric layer has a thickness ranging from 1 nm to 10 nm. | 09-26-2013 |
| 20130256799 | CMOS FINFET DEVICE AND METHOD OF FORMING THE SAME - A CMOS FinFET device and method for fabricating a CMOS FinFET device is disclosed. An exemplary CMOS FinFET device includes a substrate including a first region and a second region. The CMOS FinFET further includes a fin structure disposed over the substrate including a first fin in the first region and a second fin in the second region. The CMOS FinFET further includes a first portion of the first fin comprising a material that is the same material as the substrate and a second portion of the first fin comprising a III-V semiconductor material deposited over the first portion of the first fin. The CMOS FinFET further includes a first portion of the second fin comprising a material that is the same material as the substrate and a second portion of the second fin comprising a germanium (Ge) material deposited over the first portion of the second fin. | 10-03-2013 |
| 20140206167 | CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device comprises epitaxially-growing a strained material in a cavity of a substrate comprising a major surface and the cavity, the cavity being below the major surface. A lattice constant of the strained material is different from a lattice constant of the substrate. The method also comprises forming a first metal layer over the strained material, and forming a dielectric layer over the first metal layer, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm. The method further comprises forming a dummy poly-silicon over the dielectric layer, and forming an interlayered dielectric layer (ILD) surrounding the dummy poly-silicon. The method additionally comprises removing the dummy poly-silicon over the dielectric layer, and forming a second metal layer over the dielectric layer. | 07-24-2014 |
| 20150076558 | SEMICONDUCTOR STRUCTURE AND THE MANUFACTURING METHOD THEREOF - The present disclosure provides a FinFET. The FinFET includes a silicon-on-insulator (SOI) with an insulator; a plurality of fin structures on the insulator; an isolation on the insulator, and between two adjacent fin structures in the plurality of fin structures; and an oxide layer between each of the plurality of fin structures and the insulator, wherein the insulator comprises silicon germanium oxide. A method for manufacturing the FinFET includes forming a plurality of fin structures on a layer having a larger lattice constant than that of the fin structure by a patterning operation; oxidizing the fin structure and the layer to transform the layer into a first oxide layer; filling insulating material between adjacent fin structures; and etching the insulating material to expose a top surface and at least a portion of a sidewall of the fin structure. | 03-19-2015 |
| 20150129979 | SEMICONDUCTOR DEVICE WITH A STRAINED REGION AND METHOD OF MAKING - A semiconductor device with a strained region is provided. The semiconductor device includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, the second dielectric layer having a first fin disposed therein and an interface disposed proximate the first fin. The interface includes a first oxide region disposed in the first dielectric layer and a second oxide region disposed in the second dielectric layer. The interface induces strain in a region of the semiconductor device. A method of making a semiconductor device with a strained region is also provided. | 05-14-2015 |
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| 20100014491 | SYSTEM AND METHOD FOR REINFORCING WIRELESS COMMUNICATION CAPABILITY WITHIN WIRELESS NETWORK GROUP - A method and system is provided to reinforce wireless communication capabilities between multiple network nodes of an wireless network group. The method and system first detects a wireless transmission capability between a first network node and a second network node. When the wireless transmission capability is lower than a threshold value, one set of reinforcing coordinates will be derived by introducing the first geographic information and the second geographic information. Afterwards, move a third network node to a position with the set of reinforcing coordinates to establish an alternative wireless transmission route between the first network note and second network node. Therefore, when an original wireless transmission route between any two network nodes is abnormal, the alternative wireless transmission route will be available in time and reduce the risks of losing transmission signals. | 01-21-2010 |
| 20100103841 | SYSTEM AND METHOD FOR WIRELESSLY CONNECTING DIVERSE AD-HOC NETWORK GROUPS - A wireless connection system and method are provided to connect diverse Ad-hoc network groups. A first Ad-hoc network group has a first network node and a first edge node wirelessly connecting with each other. The second Ad-hoc network group has a second network node and a second edge node wirelessly connecting with each other without connecting the first Ad-hoc network group. The first and second edge nodes have multiple wireless modules respectively. One of the wireless modules is used to connect wireless with other network nodes in the same Ad-hoc network group. The rest extra wireless module(s) is used to connect wirelessly with another extra wireless module(s) of the edge node(s) in different Ad-hoc network group(s). Therefore, the independent first and second Ad-hoc network groups are now capable of wirelessly connecting with each other. | 04-29-2010 |
| 20100103909 | DATA PACKET, SYSTEM AND METHOD FOR MULTIPLE NODES TRANSMITTING UNDER AD-HOC NETWORK ARCHITECTURE - A system and method are provided for multiple nodes to wirelessly transmit in an Ad-hoc network architecture. First of all, an integration module of the system integrates a multi-node transmission protocol into a reservation column of a data packet. Next, an initial node of the system transmits the integrated data packet. Afterwards, according to the multi-node transmission protocol, one or more bridge node of the system receives the integrated data packet transmitted from the initial node. And finally, according to the multi-node transmission protocol, a destination node of the system receives the integrated data packet transmitted from the bridge node. By means of the proposed system and method, data transmission between multiple nodes is achieved under the Ad-hoc network architecture. | 04-29-2010 |
| 20100189083 | WIRELESS LOCAL NETWORK RECONNECTING SYSTEM AND METHOD - A wireless local network reconnecting system and method is provided. The method detects a connection-lost signal generated when a network node of the wireless local network group lost connection. A reconnecting coordinate is calculated according to the connection-lost signal and transmitted to the connection-lost network node through an external communication network. Afterwards, the method guides the connection-lost network node to move to the reconnecting coordinate and reconnect with the wireless local network group wirelessly. Since the external communication network is used to connect with the connection-lost network node, the connection-lost network node is able to reconnect with the wireless local network group through the proposed method. | 07-29-2010 |
