Patent application number | Description | Published |
20080213956 | FIELD EFFECT TRANSISTOR DEVICE INCLUDING AN ARRAY OF CHANNEL ELEMENTS - The present invention relates to a semiconductor structure such as a field effect transistors (FETs) in which the channel region of each of the FETs is composed of an array of more than one electrically isolated channel. In accordance with the present invention, the distance between each of the channels present in the channel region is within a distance of no more than twice their width from each other. The FETs of the present invention are fabricated using methods in which self-assembled block copolymers are employed in forming the channel. | 09-04-2008 |
20090032959 | ELECTRICAL FUSES AND RESISTORS HAVING SUBLITHOGRAPHIC DIMENSIONS - Electrical fuses and resistors having a sublithographic lateral or vertical dimension are provided. A conductive structure comprising a conductor or a semiconductor is formed on a semiconductor substrate. At least one insulator layer is formed on the conductive structure. A recessed area is formed in the at least one insulator layer. Self-assembling block copolymers are applied into the recessed area and annealed to form a first set of polymer blocks and a second set of polymer blocks. The first set of polymer blocks are etched selective to the second set and the at least one insulator layer. Features having sublithographic dimensions are formed in the at least one insulator layer and/or the conductive structure. Various semiconductor structures having sublithographic dimensions are formed including electrical fuses and resistors. | 02-05-2009 |
20090053129 | EMBEDDED NANOPARTICLE FILMS AND METHOD FOR THEIR FORMATION IN SELECTIVE AREAS ON A SURFACE - The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles. | 02-26-2009 |
20090233236 | METHOD FOR FABRICATING SELF-ALIGNED NANOSTRUCTURE USING SELF-ASSEMBLY BLOCK COPOLYMERS, AND STRUCTURES FABRICATED THEREFROM - In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the first units and second units, wherein the heterogeneous reflectivity surface produces an exposed portion of the first units and the second units; and applying a development cycle to selectively remove at least one of the exposed first and second units of the segregated copolymer film to provide a pattern. | 09-17-2009 |
20090297778 | METHODS FOR FORMING IMPROVED SELF-ASSEMBLED PATTERNS OF BLOCK COPOLYMERS - A method for forming self-assembled patterns on a substrate surface is provided. First, a block copolymer layer, which comprises a block copolymer having two or more immiscible polymeric block components, is applied onto a substrate that comprises a substrate surface with a trench therein. The trench specifically includes at least one narrow region flanked by two wide regions, and wherein the trench has a width variation of more than 50%. Annealing is subsequently carried out to effectuate phase separation between the two or more immiscible polymeric block components in the block copolymer layer, thereby forming periodic patterns that are defined by repeating structural units. Specifically, the periodic patterns at the narrow region of the trench are aligned in a predetermined direction and are essentially free of defects. Block copolymer films formed by the above-described method as well as semiconductor structures comprising such block copolymer films are also described. | 12-03-2009 |
20090311851 | NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD FORMING SAME - A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over said porous dielectric film, and anisotropically and selectively etching said deposited material. | 12-17-2009 |
20100203295 | EMBEDDED NANOPARTICLE FILMS AND METHOD FOR THEIR FORMATION IN SELECTIVE AREAS ON A SURFACE - The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles. | 08-12-2010 |
20100276731 | Inorganic Nanocrystal Bulk Heterojunctions - A bulk heterojunction comprising an intermixed blend of fully inorganic n- and p-type particles and its method of manufacture are described. The particles are preferably nanometer-scale, spherical-shaped particles known as nanocrystals which are assembled into a densely packed three-dimensional array. The nanocrystals are preferably fabricated from a photo-active material which, in combination with the nanocrystal shape and size, can be engineered to produce a bulk heterojunction with a specific absorption spectrum. The bulk heterojunction is preferably formed by dispersing a predetermined ratio of the desired n- and p-type nanocrystals in an organic solvent and employing low-cost solution processing techniques to deposit a film having the desired thickness, relative concentration of nanocrystal types, and degree of intermixing onto a substrate. When incorporated as the active layer in optoelectronic devices such solar cells, fully inorganic bulk heterojunctions offer significant improvements in performance while maintaining the low costs associated with organic processing techniques. | 11-04-2010 |
20100283121 | ELECTRICAL FUSES AND RESISTORS HAVING SUBLITHOGRAPHIC DIMENSIONS - Electrical fuses and resistors having a sublithographic lateral or vertical dimension are provided. A conductive structure comprising a conductor or a semiconductor is formed on a semiconductor substrate. At least one insulator layer is formed on the conductive structure. A recessed area is formed in the at least one insulator layer. Self-assembling block copolymers are applied into the recessed area and annealed to form a fist set of polymer blocks and a second set of polymer blocks. The first set of polymer blocks are etched selective to the second set and the at least one insulator layer. Features having sublithographic dimensions are formed in the at least one insulator layer and/or the conductive structure. Various semiconductor structures having sublithographic dimensions are formed including electrical fuses and resistors. | 11-11-2010 |
20110129973 | NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME - A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material over the said porous dielectric film, and anisotropically and selectively etching the deposited material. | 06-02-2011 |
20110201182 | NONVOLATIVE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME - A method of making a uniform nanoparticle array, including performing diblock copolymer thin film self assembly over a first dielectric on silicon, creating a porous polymer film, transferring a pattern into the first dielectric, selectively growing epitaxial silicon off a silicon substrate from within pores to create a silicon nanoparticle array. | 08-18-2011 |
20110248315 | STRUCTURED PILLAR ELECTRODES - An electrode comprising a plurality of structured pillars dispersed across a base contact and its method of manufacture are described. In one embodiment the structured pillars are columnar structures having a circular cross-section and are dispersed across the base surface as a uniformly spaced two-dimensional array. The height, diameter, and separation of the structured pillars are preferably on the nanometer scale and, hence, electrodes comprising the pillars are identified as nanostructured pillar electrodes. The nanostructured pillars may be formed, for example, by deposition into or etching through a surface template using standard lithography processes. Structured pillar electrodes offer a number of advantages when incorporated into optoelectronic devices such as photovoltaic cells. These include improved charge collection efficiency via a reduction in the carrier transport distance and an increase in electrode-photoactive layer interface surface area. These improvements contribute to an increase in the power conversion efficiency of photovoltaic devices. | 10-13-2011 |
20120138571 | PATTERN FORMATION EMPLOYING SELF-ASSEMBLED MATERIAL - In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order. | 06-07-2012 |
20120148474 | EMBEDDED NANOPARTICLE FILMS AND METHOD FOR THEIR FORMATION IN SELECTIVE AREAS ON A SURFACE - The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles. | 06-14-2012 |
20120183736 | PATTERN FORMATION EMPLOYING SELF-ASSEMBLED MATERIAL - In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order. | 07-19-2012 |
20120183742 | PATTERN FORMATION EMPLOYING SELF-ASSEMBLED MATERIAL - In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order. | 07-19-2012 |
20130011612 | EMBEDDED NANOPARTICLE FILMS AND METHOD FOR THEIR FORMATION IN SELECTIVE AREAS ON A SURFACE - The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles. | 01-10-2013 |
20130316150 | EMBEDDED NANOPARTICLE FILMS AND METHOD FOR THEIR FORMATION IN SELECTIVE AREAS ON A SURFACE - The invention is directed to a method of positioning nanoparticles on a patterned substrate. The method comprises providing a patterned substrate with selectively positioned recesses, and applying a solution or suspension of nanoparticles to the patterned substrate to form a wetted substrate. A wiper member is dragged across the surface of the wetted substrate to remove a portion of the applied nanoparticles from the wetted substrate, and leaving a substantial number of the remaining portion of the applied nanoparticles disposed in the selectively positioned recesses of the substrate. The invention is also directed to a method of making carbon nanotubes from the positioned nanoparticles. | 11-28-2013 |
20140096483 | Transfer Chamber for Air-Sensitive Sample Processing - A transfer chamber is disclosed having a first plate with a first surface configured to receive a sample and a second surface containing a groove. The second surface of the first plate surrounds the first surface of the first plate. A second plate has a first surface and a second surface containing a groove. A sealing component is disposed in the groove of the first plate or the second plate. A pivotable link couples the first plate and the second plate. The pivotable link is configured to hold the first plate, the second plate, and the sealing component together to substantially create an air-tight seal between the first surface of the first plate and the second surface of the second plate. The pivotable link is configured to open the seal in response to a pressure differential across the transfer chamber. | 04-10-2014 |
20140216539 | INTERDIGITATED ELECTRICAL CONTACTS FOR LOW ELECTRONIC MOBILITY SEMICONDUCTORS - Structures useful for forming contacts to materials having low charge carrier mobility are described. Methods for their formation and use are also described. These structures include interdigitated electrodes capable of making electrical contact to semiconducting materials having low electron and/or whole mobility. In particular, these structures are useful for organic semiconducting devices made with conducting polymers and small molecules. They are also useful for semiconducting devices made with nanocrystalline semiconductors. | 08-07-2014 |