Patent application number | Description | Published |
20090246368 | METHOD OF SULFONATING AN ARTICLE AND RELATED APPARATUS - An article is sulfonated by forming a sulfonating gas composition containing a gaseous sulfur-containing compound provided from a gas source. The gas source may utilize a chemical feed stock that includes a precursor sulfur-containing compound. The article is then contacted with the sulfur-containing gas until a surface treatment is effected. Next, the article is then optionally contacted with a gaseous neutralization composition, and then a liquid neutralization composition. In another sulfonation method, a first test sample is sulfonated and then analyzed by inductively coupled plasma analysis and X-ray fluorescence spectroscopy. A calibration relationship between the two spectroscopic techniques is determined with the inductively coupled plasma atomic spectroscopic value taken as the accurate value. In subsequent sulfonation runs, test samples are included and monitored by X-ray fluorescence. | 10-01-2009 |
20100239765 | COMPOUNDS FOR FORMING METAL NITRIDES - Nitride forming precursors are heated to form a metal nitride on a substrate. In some variations, the precursors are contacted with the substrate which has previously been heated to a sufficient temperature to form a nitride film. Precursors to tungsten and molybdenum nitride are provided. | 09-23-2010 |
20120058270 | THERMALLY STABLE VOLATILE FILM PRECURSORS - A precursor for the deposition of a thin film by atomic layer deposition is provided. The compound has the formula MxLy where M is a metal and L is an amidrazone-derived ligand or an amidate-derived ligand. A process of forming a thin film using the precursors is also provided. | 03-08-2012 |
20130164456 | THERMALLY STABLE VOLATILE PRECURSORS - A method of forming a thin film on a substrate which includes a step of contacting a surface with a precursor compound having a transition metal and one or more alkyl-1,3-diazabutadiene ligands is provided. The resulting modified surface is then contacted with an activating compound. | 06-27-2013 |
20130330473 | Atomic Layer Deposition of Transition Metal Thin Films Using Boranes as the Reducing Agent - A method for forming a metal comprises contacting a compound having formula 1 with a compound having formula 2 with an amine borane: | 12-12-2013 |
20140161977 | Synthesis and Characterization of First Row Transition Metal Complexes Containing alpha-keto Hydrazonate Ligands as Potential Precursors for Use in Metal Film Deposition - A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): | 06-12-2014 |
20140234550 | ATOMIC LAYER DEPOSITION OF TRANSITION METAL THIN FILMS - An atomic layer deposition method for forming metal films on a substrate comprises a deposition cycle including:
| 08-21-2014 |
20150159273 | Precursors for Atomic Layer Deposition - Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, α-imino enolate compounds and α-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided. | 06-11-2015 |