Patent application number | Description | Published |
20120153412 | WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES - The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element. | 06-21-2012 |
20120235274 | SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED DOUBLE-WALL CAPACITOR FOR EMBEDDED DYNAMIC RANDOM ACCESS MEMORY (EDRAM) AND METHOD TO FORM THE SAME - Semiconductor structures having integrated double-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded double-wall capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. The trench has a bottom and sidewalls. A U-shaped metal plate is disposed at the bottom of the trench, spaced apart from the sidewalls. A second dielectric layer is disposed on and conformal with the sidewalls of the trench and the U-shaped metal plate. A top metal plate layer is disposed on and conformal with the second dielectric layer. | 09-20-2012 |
20130336045 | SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH HALF-METAL AND METHOD TO WRITE AND READ THE DEVICE - Spin transfer torque memory (STTM) devices with half-metals and methods to write and read the devices are described. For example, a magnetic tunneling junction includes a free magnetic layer, a fixed magnetic layer, and a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer. One or both of the free magnetic layer and the fixed magnetic layer includes a half-metal material at an interface with the dielectric layer. | 12-19-2013 |
20140035041 | TECHNIQUES AND CONFIGURATIONS FOR STACKING TRANSISTORS OF AN INTEGRATED CIRCUIT DEVICE - Embodiments of the present disclosure provide techniques and configurations for stacking transistors of a memory device. In one embodiment, an apparatus includes a semiconductor substrate, a plurality of fin structures formed on the semiconductor substrate, wherein an individual fin structure of the plurality of fin structures includes a first isolation layer disposed on the semiconductor substrate, a first channel layer disposed on the first isolation layer, a second isolation layer disposed on the first channel layer, and a second channel layer disposed on the second isolation layer, and a gate terminal capacitively coupled with the first channel layer to control flow of electrical current through the first channel layer for a first transistor and capacitively coupled with the second channel layer to control flow of electrical current through the second channel layer for a second transistor. Other embodiments may be described and/or claimed. | 02-06-2014 |
20140092666 | LOW VOLTAGE EMBEDDED MEMORY HAVING CONDUCTIVE OXIDE AND ELECTRODE STACKS - Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer. | 04-03-2014 |
20140092677 | DECREASED SWITCHING CURRENT IN SPIN-TRANSFER TORQUE MEMORY - Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell. | 04-03-2014 |
20140117476 | BALANCING ENERGY BARRIER BETWEEN STATES IN PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS - Techniques are disclosed for enhancing performance of a perpendicular magnetic tunnel junction (MTJ) by implementing an additional ferromagnetic layer therein. The additional ferromagnetic layer can be implemented, for example, in or otherwise proximate either the fixed ferromagnetic layer or the free ferromagnetic layer of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is implemented with a non-magnetic spacer, wherein the thickness of the additional ferromagnetic layer and/or spacer can be adjusted to sufficiently balance the energy barrier between parallel and anti-parallel states of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is configured such that its magnetization is opposite that of the fixed ferromagnetic layer. | 05-01-2014 |
20140146592 | LOW VOLTAGE EMBEDDED MEMORY HAVING CATIONIC-BASED CONDUCTIVE OXIDE ELEMENT - Low voltage embedded memory having cationic-based conductive oxide elements is described. For example, a material layer stack for a memory element includes a first conductive electrode. A cationic-based conductive oxide layer is disposed on the first conductive electrode. The cationic-based conductive oxide layer has a plurality of cation vacancies therein. A second electrode is disposed on the cationic-based conductive oxide layer. | 05-29-2014 |
20140167191 | METHOD FOR REDUCING SIZE AND CENTER POSITIONING OF MAGNETIC MEMORY ELEMENT CONTACTS - A method of centering a contact on a layer of a magnetic memory device. In one embodiment, a spacers is formed in an opening surrounding the upper layer and the contact is formed within the spacer. The spacer is formed from an anisotropically etched conformal layer deposited on an upper surface and into the opening. | 06-19-2014 |
20140175575 | PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANCED STABILITY AND METHOD TO FORM SAME - Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer. | 06-26-2014 |
20140175583 | PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME - Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device. | 06-26-2014 |
20140204661 | MEMORY WITH ELEMENTS HAVING TWO STACKED MAGNETIC TUNNELING JUNCTION (MTJ) DEVICES - A magnetic memory having memory elements each with two magnetic tunneling junction (MTJ) devices is disclosed. The devices in each element are differentially programmed with complementary data. The devices for each element are stacked one above the other so that the element requires no more substrate area than a single MTJ device. | 07-24-2014 |
20140299953 | WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES - The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element. | 10-09-2014 |
20140308760 | PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANCED STABILITY AND METHOD TO FORM SAME - Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer. | 10-16-2014 |
20140329337 | PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME - Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device. | 11-06-2014 |