Patent application number | Description | Published |
20080278989 | Resistive memory device and method of manufacturing the same - Provided is a resistive memory device and a method of manufacturing the resistive memory device that includes a bottom electrode, an insulating layer that is formed on the bottom electrode and has a hole that exposes the bottom electrode, a resistance layer and an intermediate layer which are formed in the hole, a switch structure formed on a surface of the intermediate layer, and an upper electrode formed on the switch structure. | 11-13-2008 |
20090172465 | Semiconductor device having coupling elimination circuit - A semiconductor device including a plurality of repairable signal lines, the device including a first driver adapted to maintain a first portion of each defective one of the repairable signal lines at a first voltage level, and a second driver adapted to drive a second portion of each of the defective ones of the repairable signal lines being repaired to the first voltage level. | 07-02-2009 |
20090175027 | LIGHT EMISSION DEVICE AND DISPLAY DEVICE USING THE SAME AS LIGHT SOURCE - A light emission device for simplifying a structure of an electron emission unit and a manufacturing process thereof is provided. A display device using the light emission device as a light source is also provided. The light emission device includes a vacuum panel having a first substrate and a second substrate facing each other. A sealing member is between the first and second substrates. Recesss portions each have a depth into a side of the first substrate facing the second substrate. Cathode electrodes are in corresponding recesses. Electron emission regions are on corresponding cathode electrodes. A gate electrode is fixed at one side of the first substrate at a distance from the electron emission regions. A light emission unit is at one side of the second substrate. The gate electrode includes a mesh unit having openings for passing through an electron beam and a supporting member surrounding the mesh unit. | 07-09-2009 |
20100092679 | Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer - Provided are a material layer forming apparatus using a supercritical fluid, a material layer forming system including the apparatus, and a method of forming a material layer using the system. The material layer forming system may include a high pressure pump supplying a supercritical fluid to a precursor storage container and the material layer forming apparatus, and maintaining the internal pressure of the precursor storage container, a reactant material storage container at a pressure such that the supercritical fluid is in a supercritical state, and a material layer forming apparatus. The material layer forming system may further include a pressure gauge adjusting the pressure of the material layer forming apparatus. The precursor of the precursor storage container may be supplied to the material layer forming apparatus using the supercritical fluid. | 04-15-2010 |
20100147807 | Electron beam annealing apparatuses and annealing methods using the same - Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate. | 06-17-2010 |
20100151617 | Method of growing silicon and method of manufacturing solar cell using the same - In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO | 06-17-2010 |
20100155826 | Non-volatile memory device and method of fabricating the same - Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes. | 06-24-2010 |
20100200908 | Nonvolatile memory device and method of fabricating the same - Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected. | 08-12-2010 |
20110100448 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell including: a semiconductor substrate including a p-type layer and an n-type layer; a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1 | 05-05-2011 |
20110100450 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing a solar cell includes providing a semiconductor substrate including a p-type layer and an n-type layer. A dielectric layer including aluminum oxynitride is disposed on one side of the semiconductor substrate. A first electrode is in electrical communication with the p-type layer of the semiconductor substrate. A second electrode is in electrical communication with the n-type layer of the semiconductor substrate. The disposing the dielectric layer comprises repeatedly forming an aluminum nitride layer and substituting a part of nitrogen of the aluminum nitride layer with oxygen. | 05-05-2011 |
20110263202 | BLUETOOTH COMMUNICATION METHOD AND SYSTEM - A Bluetooth communication method and system allows a Bluetooth device to rapidly establish a Bluetooth connection. A first Bluetooth device that is in a client mode displays a visual representation of its ID on a display unit. A second Bluetooth device that is in a host mode acquires the displayed visual representation of the ID of the first Bluetooth device via a camera module and extracts the ID of the first Bluetooth device. The second Bluetooth device transmits a Bluetooth communication-connection-request signal to the first Bluetooth device using the extracted ID. The first Bluetooth device transmits a replay signal responding to the Bluetooth communication-connection-request signal to the second Bluetooth device. The second Bluetooth device receives the reply signal and establishes a Bluetooth communication channel with the first Bluetooth device. | 10-27-2011 |
20140015743 | FLEXIBLE DISPLAY APPARATUS AND OPERATING METHOD THEREOF - A flexible display apparatus is provided. The flexible display apparatus includes a display, a sensor which senses shape deformation of the display, a storage which, if a shape deformation is sensed, stores operation state information of a first operation state of the flexible display apparatus prior to the first shape deformation being performed, and a controller which performs a function corresponding to the first shape deformation if a second shape deformation different from the first shape deformation is sensed, returns to the first operation state according to the operation state information stored in the storage. | 01-16-2014 |